专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20050260826A1 YIELD IMPROVEMENT IN SILICON-GERMANIUM EPITAXIAL GROWTH 失效
标题翻译：硅锗外延生长中的YIELD改进
公开(公告)号：US20050260826A1
公开(公告)日：2005-11-24
申请号：US10709644
申请日：2004-05-19
申请人： Mark Dupuis , Wade Hodge , Daniel Kelly , Ryan Wuthrich
发明人： Mark Dupuis , Wade Hodge , Daniel Kelly , Ryan Wuthrich
IPC分类号： H01L21/20 , H01L21/205 , H01L29/04 , H01L29/10 , H01L29/12 , H01L31/036
CPC分类号： H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/02639
摘要： A method for determining a SiGe deposition condition so as to improve yield of a semiconductor structure. Fabrication of the semiconductor structure starts with a single-crystal silicon (Si) layer. Then, first and second shallow trench isolation (STI) regions are formed in the single-crystal Si layer. The STI regions sandwich and define a first single-crystal Si region. Next, silicon-germanium (SiGe) mixture is deposited on top of the structure in a SiGe deposition condition so as to grow (i) a second single-crystal silicon region grows up from the top surface of the first single-crystal silicon region and (ii) first and second polysilicon regions from the top surfaces of the first and second STI regions, respectively. By increasing SiGe deposition temperature and/or lowering precursor flow rate until the resulting yield is within a pre-specified range, a satisfactory SiGe deposition condition can be determined for mass production of the structure.
摘要翻译：一种用于确定SiGe沉积条件以提高半导体结构的产量的方法。半导体结构的制造以单晶硅（Si）层开始。然后，在单晶Si层中形成第一和第二浅沟槽隔离（STI）区域。 STI区域夹持并限定第一单晶Si区域。接下来，硅锗（SiGe）混合物以SiGe沉积条件沉积在结构的顶部，以便生长（i）第二单晶硅区域从第一单晶硅区域的顶表面生长，（ii）分别来自第一和第二STI区域的顶表面的第一和第二多晶硅区域。通过提高SiGe沉积温度和/或降低前驱体流速直到得到的产率达到预定范围内，可以确定满足SiGe沉积条件以进行大规模生产。

2. 发明申请

US20070051980A1 SILICON GERMANIUM (SiGe) HETEROJUNCTION BIPOLAR TRANSISTOR (HBT) 有权
标题翻译：硅锗（SiGe）异相双极晶体管（HBT）
公开(公告)号：US20070051980A1
公开(公告)日：2007-03-08
申请号：US11161936
申请日：2005-08-23
申请人： Wade Hodge , Alvin Joseph , Rajendran Krishnasamy , Qizhi Liu , Bradley Orner
发明人： Wade Hodge , Alvin Joseph , Rajendran Krishnasamy , Qizhi Liu , Bradley Orner
IPC分类号： H01L29/737 , H01L21/8222
CPC分类号： H01L29/7378 , H01L21/8249 , H01L29/1004
摘要： A heterojunction bipolar transistor (HBT), an integrated circuit (IC) chip including at least one HBT and a method of forming the IC. The HBT includes an extrinsic base with one or more buried interstitial barrier layer. The extrinsic base may be heavily doped with boron and each buried interstitial barrier layer is doped with a dopant containing carbon, e.g., carbon or SiGe:C. The surface of the extrinsic base may be silicided.
摘要翻译：异质结双极晶体管（HBT），包括至少一个HBT的集成电路（IC）芯片和形成IC的方法。 HBT包括具有一个或多个掩埋间隙屏障层的外在基底。外部基极可以用硼重掺杂，并且每个掩埋的间隙势垒层掺杂含有碳的掺杂剂，例如碳或SiGe：C。外基的表面可以被硅化。

3. 发明申请

US20060289959A1 YIELD IMPROVEMENT IN SILICON-GERMANIUM EPITAXIAL GROWTH 有权
标题翻译：硅锗外延生长中的YIELD改进
公开(公告)号：US20060289959A1
公开(公告)日：2006-12-28
申请号：US11468030
申请日：2006-08-29
申请人： Mark Dupuis , Wade Hodge , Daniel Kelly , Ryan Wuthrich
发明人： Mark Dupuis , Wade Hodge , Daniel Kelly , Ryan Wuthrich
IPC分类号： H01L31/00
CPC分类号： H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/02639
摘要： A method for determining a SiGe deposition condition so as to improve yield of a semiconductor structure. Fabrication of the semiconductor structure starts with a single-crystal silicon (Si) layer. Then, first and second shallow trench isolation (STI) regions are formed in the single-crystal Si layer. The STI regions sandwich and define a first single-crystal Si region. Next, silicon-germanium (SiGe) mixture is deposited on top of the structure in a SiGe deposition condition so as to grow (i) a second single-crystal silicon region grows up from the top surface of the first single-crystal silicon region and (ii) first and second polysilicon regions from the top surfaces of the first and second STI regions, respectively. By increasing SiGe deposition temperature and/or lowering precursor flow rate until the resulting yield is within a pre-specified range, a satisfactory SiGe deposition condition can be determined for mass production of the structure.
摘要翻译：一种用于确定SiGe沉积条件以提高半导体结构的产量的方法。半导体结构的制造以单晶硅（Si）层开始。然后，在单晶Si层中形成第一和第二浅沟槽隔离（STI）区域。 STI区域夹持并限定第一单晶Si区域。接下来，硅锗（SiGe）混合物以SiGe沉积条件沉积在结构的顶部，以便生长（i）第二单晶硅区域从第一单晶硅区域的顶表面生长，（ii）分别来自第一和第二STI区域的顶表面的第一和第二多晶硅区域。通过提高SiGe沉积温度和/或降低前驱体流速直到得到的产率达到预定范围内，可以确定满足SiGe沉积条件以进行大规模生产。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式