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    • 9. 发明申请
    • METHOD FOR FABRICATING CONDUCTING PLATES FOR A HIGH-Q MIM CAPACITOR
    • 用于制造高Q MIM电容器的导电板的方法
    • US20100019349A1
    • 2010-01-28
    • US12569750
    • 2009-09-29
    • Isaiah O. OladejiAlan Cuthbertson
    • Isaiah O. OladejiAlan Cuthbertson
    • H01L29/92
    • H01L27/0805H01L21/76838H01L28/75
    • A method of forming one or more capacitors on or in a substrate and a capacitor structure resulting therefrom is disclosed. The method includes forming a trench in the substrate, lining the trench with a first copper-barrier layer, and substantially filling the trench with a first copper layer. The first copper layer is substantially chemically isolated from the substrate by the first copper-barrier layer. A second copper-barrier layer is formed over the first copper layer and a first dielectric layer is formed over the second copper-barrier layer. The dielectric layer is substantially chemically isolated from the first copper layer by the second copper-barrier layer. A third copper-barrier layer is formed over the dielectric layer and a second copper layer is formed over the third copper-barrier layer. The second copper layer is formed in a non-damascene process.
    • 公开了一种在衬底上或衬底中形成一个或多个电容器的方法以及由此产生的电容器结构。 该方法包括在衬底中形成沟槽,用第一铜阻挡层衬套沟槽,并用第一铜层基本上填充沟槽。 第一铜层通过第一铜阻挡层与衬底基本上化学隔离。 在第一铜层上形成第二铜阻挡层,在第二铜阻挡层上形成第一电介质层。 电介质层通过第二铜阻挡层与第一铜层基本上化学隔离。 在电介质层上形成第三铜阻挡层,在第三铜阻挡层上形成第二铜层。 第二铜层以非镶嵌工艺形成。