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    • 3. 发明授权
    • Method for selectively forming semiconductor regions
    • 选择性地形成半导体区域的方法
    • US5498578A
    • 1996-03-12
    • US236054
    • 1994-05-02
    • John W. SteeleEdouard de FresartN. David Theodore
    • John W. SteeleEdouard de FresartN. David Theodore
    • H01L21/205H01L21/20H01L27/06H01L21/02
    • H01L21/02381H01L21/0245H01L21/02488H01L21/02532H01L21/0262H01L21/02639H01L21/02661H01L27/0623
    • A method for selectively forming semiconductor regions (28) is provided, by exposing a patterned substrate (21) having exposed regions of semiconductor material (26,27) and exposed regions of oxide (24) to a first temperature and a semiconductor source-gas and hydrogen in an atmosphere substantially absent halogens, a blanket semiconductor layer (28,29) forms over the exposed regions of semiconductor material (26,27) and oxide (24). By further exposing the patterned substrate (21) to a second temperature higher than the first temperature in a hydrogen atmosphere, polycrystalline semiconductor material (29) formed over the exposed oxide regions (24) is selectively removed leaving that portion of the blanket semiconductor layer (28) over the exposed regions of semiconductor material (26,27). The method is suitable for forming isolated regions of semiconductor material for fabricating semiconductor devices and is not load dependent.
    • 提供一种用于选择性地形成半导体区域(28)的方法,通过将具有暴露的半导体材料(26,27)区域和氧化物(24)的暴露区域的图案化衬底(21)暴露于第一温度和半导体源气体 和基本上不含卤素的气氛中的氢气,覆盖半导体层(28,29)形成在半导体材料(26,27)和氧化物(24)的暴露区域上。 通过在氢气氛中将图案化的衬底(21)进一步暴露于高于第一温度的第二温度下,形成在暴露的氧化物区域(24)上方的多晶半导体材料(29)被选择性地去除,留下覆盖半导体层 28)暴露在半导体材料(26,27)的区域上。 该方法适用于形成用于制造半导体器件的半导体材料的隔离区域,并且不依赖负载。