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1. 发明授权

US5429963A Twin-tub complementary heterostructure field effect transistor fab process 失效
标题翻译：双槽互补异质结构场效应晶体管工艺
公开(公告)号：US5429963A
公开(公告)日：1995-07-04
申请号：US232978
申请日：1994-04-25
申请人： Edgar J. Martinez , Michael Shur , Fritz Schuermeyer , Charles Cerny
发明人： Edgar J. Martinez , Michael Shur , Fritz Schuermeyer , Charles Cerny
IPC分类号： H01L21/8252 , H01L27/06 , H01L27/092 , H01L21/331
CPC分类号： H01L21/8252 , H01L27/0605 , H01L27/0922
摘要： This is a fabrication process for complementary III-V HFETs in which devices are built side-by-side in doped-areas, known as "tubs", grown by molecular beam epitaxy on indium phosphide (InP) substrates, or other material systems such as materials grown on GaAs substrates. The layers grown are a semi-insulating buffer layer of InAlAs, a InGaAs channel, an InAlAs barrier layer and finally an InGaAs cap layer. All layers are lattice matched or pseudomorphic to the InP substrate. After mesa etching of areas around the transistor, a high temperature silicon nitride (Si.sub.3 N.sub.4) layer is deposited using chemical vapor deposition, and photoresist is deposited. Then n-well and p-well areas are formed in turn, with appropriate ion-implantation, stripping of the photoresist, and annealing to activate the dopants. Then the Si.sub.3 N.sub.4 is stripped and the samples thoroughly cleaned. Then, the refractory gate metal is sputtered, delineated with photoresist and reactive ion etch procedures. Areas for n-ohmic and p-ohmic contacts are formed, using with Si.sub.3 N.sub.4 and photoresist covering, ion implanting, and annealing. Finally the p- and n-ohmic contact metals are evaporated and alloyed. The typical n-ohmic metal system is Au/Ge/Ni while Au/Zn is used for the formation of the p-ohmic contacts. The integrated circuit is completed by depositing and patterning the interconnect metal.
摘要翻译：这是互补III-V HFET的制造工艺，其中器件在掺杂区域（称为“桶”）中并排构建，通过磷化铟（InP）衬底上的分子束外延生长，或其他材料系统作为在GaAs衬底上生长的材料。所生长的层是InAlAs，InGaAs沟道，InAlAs阻挡层和最终为InGaAs覆盖层的半绝缘缓冲层。所有层与InP衬底晶格匹配或伪构。在晶体管周围区域的台面蚀刻之后，使用化学气相沉积沉积高温氮化硅（Si 3 N 4）层，并沉积光致抗蚀剂。然后依次形成n阱和p阱区，通过适当的离子注入，剥离光致抗蚀剂，并退火以激活掺杂剂。然后将Si3N4剥离，样品彻底清洗。然后，溅射耐火栅极金属，用光致抗蚀剂和反应离子蚀刻程序描绘。使用Si3N4和光致抗蚀剂覆盖，离子注入和退火，形成用于n-欧姆和p-欧姆接触的区域。最后，p型和n型欧姆接触金属被蒸发并合金化。典型的n欧姆金属系统是Au / Ge / Ni，而Au / Zn用于形成p欧姆接触。集成电路通过沉积和图案化互连金属而完成。

2. 发明公开

US20240231729A9 SMART VISUAL DISPLAY 审中-公开
公开(公告)号：US20240231729A9
公开(公告)日：2024-07-11
申请号：US17769475
申请日：2020-10-21
申请人： Michael Shur
发明人： Michael Shur
IPC分类号： G06F3/14 , G09G3/32
CPC分类号： G06F3/14 , G09G3/32 , G09G2320/0666 , G09G2320/0686 , G09G2320/0693 , G09G2354/00 , G09G2360/144 , G09G2370/04
摘要： One embodiment provides a computing device. The computing device is configured to couple to a display. The computing device includes an ambient detection module configured to detect a characteristic of ambient light relative to at least a portion of a display area of the display. The computing device further includes a displayed image optimization module configured to optimize a feature of at least a portion of a displayed image based, at least in part, on the characteristic of the ambient light.

3. 发明授权

US09263538B2 Ohmic contact to semiconductor 有权
标题翻译：欧姆接触半导体
公开(公告)号：US09263538B2
公开(公告)日：2016-02-16
申请号：US13296581
申请日：2011-11-15
申请人： Remigijus Gaska , Michael Shur
发明人： Remigijus Gaska , Michael Shur
IPC分类号： H01L29/45 , H01L33/38 , H01L33/40
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/155 , H01L29/2003 , H01L29/205 , H01L29/417 , H01L33/06 , H01L33/32 , H01L33/38 , H01L33/40
摘要： An ohmic contact to a semiconductor layer including a heterostructure barrier layer and a metal layer adjacent to the heterostructure barrier layer is provided. The heterostructure barrier layer can form a two dimensional free carrier gas for the contact at a heterointerface of the heterostructure barrier layer and the semiconductor layer. The metal layer is configured to form a contact with the two dimensional free carrier gas.
摘要翻译：提供了与包括异质结构阻挡层和邻近异质结构阻挡层的金属层的半导体层的欧姆接触。异质结构阻挡层可以在异质结构阻挡层和半导体层的异质界面处形成用于接触的二维自由载气。金属层被配置成与二维无载体气体形成接触。

4. 发明授权

US08907322B2 Deep ultraviolet light emitting diode 有权
标题翻译：深紫外线发光二极管
公开(公告)号：US08907322B2
公开(公告)日：2014-12-09
申请号：US13161961
申请日：2011-06-16
申请人： Remigijus Gaska , Maxim S. Shatalov , Michael Shur
发明人： Remigijus Gaska , Maxim S. Shatalov , Michael Shur
IPC分类号： H01L31/00 , H01L33/10 , H01L33/04 , H01L33/00 , H01L33/40 , H01L33/06 , H01L33/22 , H01L33/38
CPC分类号： H01L33/04 , H01L33/06 , H01L33/10 , H01L33/22 , H01L33/385 , H01L33/405
摘要： A light emitting diode is provided, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure. The diode can include a blocking layer, which is configured so that a difference between an energy of the blocking layer and the electron ground state energy of a quantum well is greater than the energy of the polar optical phonon in the material of the light generating structure. The diode can include a composite contact, including an adhesion layer, which is at least partially transparent to light generated by the light generating structure and a reflecting metal layer configured to reflect at least a portion of the light generated by the light generating structure.
摘要翻译：提供一种发光二极管，其包括n型接触层和与n型接触层相邻的发光结构。光产生结构包括一组量子阱。接触层和发光结构可以被配置为使得n型接触层的能量与量子阱的电子基态能量之间的差大于光的材料中的极性光学声子的能量生成结构。另外，发光结构可以被配置为使得其宽度与用于通过注入到光产生结构中的电子发射极性光学声子的平均自由程相当。二极管可以包括阻挡层，其被配置为使得阻挡层的能量与量子阱的电子基态能量之间的差异大于光生成结构的材料中的极化光学声子的能量。二极管可以包括复合触点，其包括对由光产生结构产生的光至少部分透明的粘附层和被配置为反射由光产生结构产生的光的至少一部分的反射金属层。

5. 发明授权

US08787418B2 Emitting device with compositional and doping inhomogeneities in semiconductor layers 有权
标题翻译：具有半导体层成分和掺杂不均匀性的发光器件
公开(公告)号：US08787418B2
公开(公告)日：2014-07-22
申请号：US13572446
申请日：2012-08-10
申请人： Michael Shur , Maxim S. Shatalov , Alexander Dobrinsky , Remigijus Gaska , Jinwei Yang
发明人： Michael Shur , Maxim S. Shatalov , Alexander Dobrinsky , Remigijus Gaska , Jinwei Yang
IPC分类号： H01S5/00
CPC分类号： H01L29/15 , B82Y20/00 , H01L21/0254 , H01L33/06 , H01S5/0421 , H01S5/3216 , H01S5/342 , H01S5/34333
摘要： A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.
摘要翻译：提供了一种包括一个或多个具有横向区域的层，该层被配置为有助于辐射通过该层的传输和被配置为促进流过该层的电流的横向区域。该层可以包括短期超晶格，其包括与井交替的障碍物。在这种情况下，障碍物可以包括被配置为减少在层中吸收的辐射量的透明区域以及被配置为将跨越层的电压降保持在期望范围内的较高导电区域。

6. 发明申请

US20140008675A1 Emitting Device with Improved Extraction 有权
标题翻译：发射装置改进提取
公开(公告)号：US20140008675A1
公开(公告)日：2014-01-09
申请号：US13517711
申请日：2012-06-14
申请人： Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
发明人： Maxim S. Shatalov , Alexander Dobrinsky , Michael Shur , Remigijus Gaska
IPC分类号： H01L33/60 , F21V5/00
CPC分类号： H01L33/60 , F21V5/002 , H01L33/0045 , H01L33/007 , H01L33/20 , H01L33/22 , H01L2933/0083 , Y10T29/49
摘要： A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. The profiled surface also includes a set of small roughness components superimposed on the set of large roughness components and providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation.
摘要翻译：提供了用于改善辐射通过界面的传播的异型表面。成形表面包括一组大的粗糙度部件，其提供成型表面的第一变化，其特征标度比辐射的目标波长大大大大约一个数量级。成形表面还包括一组小的粗糙度部件，叠加在该组粗糙度较大的部件上，并提供具有辐射目标波长级的特征刻度的成型表面的第二变型。

7. 发明授权

US08552562B2 Profiled contact for semiconductor device 有权
标题翻译：半导体器件型材接触
公开(公告)号：US08552562B2
公开(公告)日：2013-10-08
申请号：US12791288
申请日：2010-06-01
申请人： Grigory Simin , Michael Shur , Remigijus Gaska
发明人： Grigory Simin , Michael Shur , Remigijus Gaska
IPC分类号： H01L27/148 , H01L23/48 , H01L23/52 , H01L29/40 , H01L21/44
CPC分类号： H01L29/42312 , H01L29/41708 , H01L29/41716 , H01L29/41725 , H01L29/42304 , H01L29/42308
摘要： A profiled contact for a device, such as a high power semiconductor device is provided. The contact is profiled in both a direction substantially parallel to a surface of a semiconductor structure of the device and a direction substantially perpendicular to the surface of the semiconductor structure. The profiling can limit the peak electric field between two electrodes to approximately the same as the average electrical field between the electrodes, as well as limit the electric field perpendicular to the semiconductor structure both within and outside the semiconductor structure.
摘要翻译：提供了诸如大功率半导体器件的器件的成型接触件。接触件在基本上平行于器件的半导体结构的表面的方向和基本上垂直于半导体结构的表面的方向上成型。轮廓可以将两个电极之间的峰值电场限制为与电极之间的平均电场大致相同，并且在半导体结构内部和外部限制垂直于半导体结构的电场。

8. 发明授权

US08497527B2 Device having active region with lower electron concentration 有权
标题翻译：具有较低电子浓度的有源区的器件
公开(公告)号：US08497527B2
公开(公告)日：2013-07-30
申请号：US12402526
申请日：2009-03-12
申请人： Alexei Koudymov , Michael Shur , Remigijus Gaska
发明人： Alexei Koudymov , Michael Shur , Remigijus Gaska
IPC分类号： H01L29/66
CPC分类号： H01L29/7787 , H01L29/0657 , H01L29/2003 , H01L29/207 , H01L29/518 , H01L29/7831
摘要： A device comprising a two-dimensional electron gas that includes an active region located in a portion of the electron gas is disclosed. The active region comprises an electron concentration less than an electron concentration of a set of non-active regions of the electron gas. The device includes a controlling terminal located on a first side of the active region. The device can comprise, for example, a field effect transistor (FET) in which the gate is located and used to control the carrier injection into the active region and define the boundary condition for the electric field distribution within the active region. The device can be used to generate, amplify, filter, and/or detect electromagnetic radiation of radio frequency (RF) and/or terahertz (THz) frequencies.
摘要翻译：公开了一种包括二维电子气体的装置，其包括位于电子气体的一部分中的有源区。有源区包含小于电子气体的一组非有源区的电子浓度的电子浓度。该装置包括位于有源区域的第一侧上的控制终端。该器件可以包括例如场效应晶体管（FET），其中栅极位于并用于控制载流子注入有源区域并且限定用于有源区域内的电场分布的边界条件。该装置可用于产生，放大，滤波和/或检测射频（RF）和/或太赫兹（THz）频率的电磁辐射。

9. 发明授权

US08395324B2 Light emitting system with dual use light element 有权
标题翻译：具有双重使用光源的发光系统
公开(公告)号：US08395324B2
公开(公告)日：2013-03-12
申请号：US12763674
申请日：2010-04-20
申请人： Yuriy Bilenko , Remigijus Gaska , Michael Shur , Alexei Koudymov
发明人： Yuriy Bilenko , Remigijus Gaska , Michael Shur , Alexei Koudymov
IPC分类号： H05B37/02
CPC分类号： H05B33/0863 , H05B33/0866
摘要： A solution is provided in which one or more of a plurality of light elements is alternately operated as a light emitting element and a light detecting element. For example, a system can operate a light element as a light detecting element while operating at least one other light element as a light emitting element in order to manage operation of the light elements to generate light having a set of desired attributes, evaluating an operating condition of the other light element(s), and/or the like.
摘要翻译：提供了一种解决方案，其中多个光元件中的一个或多个交替地作为发光元件和光检测元件操作。例如，系统可以操作作为光检测元件的光元件，同时操作至少一个其它光元件作为发光元件，以便管理光元件的操作以产生具有一组所需属性的光，评估操作另一个光元件的状态和/或类似物。

10. 发明申请

US20130056753A1 Semiconductor Device with Low-Conducting Field-controlling Element 审中-公开
标题翻译：具有低导通场控元件的半导体器件
公开(公告)号：US20130056753A1
公开(公告)日：2013-03-07
申请号：US13604984
申请日：2012-09-06
申请人： Grigory Simin , Michael Shur , Remigijus Gaska
发明人： Grigory Simin , Michael Shur , Remigijus Gaska
IPC分类号： H01L29/78 , G06F17/50 , H01L29/24
CPC分类号： H01L29/7787 , H01L29/0649 , H01L29/2003 , H01L29/205 , H01L29/404 , H01L29/405
摘要： A semiconductor device including a low conducting field-controlling element is provided. The device can include a semiconductor including an active region (e.g., a channel), and a set of contacts to the active region. The field-controlling element can be coupled to one or more of the contacts in the set of contacts. The field-controlling element can be formed of a low conducting layer of material and have a lateral resistance that is both larger than an inverse of a minimal operating frequency of the device and smaller than an inverse of a maximum control frequency of the device.
摘要翻译：提供了包括低导电场控制元件的半导体器件。该器件可以包括半导体，该半导体包括有源区（例如，沟道）和与该有源区的一组触点。场控制元件可以耦合到该组触点中的一个或多个触点。场控制元件可以由低导电材料层形成，并且具有大于装置的最小工作频率的倒数的横向电阻并且小于装置的最大控制频率的倒数。

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