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1. 发明授权

US5877072A Process for forming doped regions from solid phase diffusion source 失效
标题翻译：用于从固相扩散源形成掺杂区的工艺
公开(公告)号：US5877072A
公开(公告)日：1999-03-02
申请号：US829113
申请日：1997-03-31
申请人： Ebrahim Andideh , Scott E. Thompson
发明人： Ebrahim Andideh , Scott E. Thompson
IPC分类号： H01L21/225 , H01L21/316 , H01L21/385
CPC分类号： H01L21/02129 , H01L21/02271 , H01L21/02362 , H01L21/2255 , H01L21/31612
摘要： A process for doping a region in a substrate from a solid phase source. An inert gas is bubbled through a dopant containing ester and supplied to a chamber along with the gases used to form a silicon dioxide layer such as a TEOS formed layer. The flow of the inert gas can be modulated to grade the dopant concentration in the silicon dioxide layer. The dopant is diffused from the silicon dioxide layer into the substrate to form, for instance, source and drain regions in field-effect transistors.
摘要翻译：用于从固相源掺杂在衬底中的区域的工艺。将惰性气体鼓泡通过含掺杂剂的酯，并与用于形成诸如TEOS形成层的二氧化硅层的气体一起供应到室。可以调节惰性气体的流动，以评估二氧化硅层中的掺杂剂浓度。掺杂剂从二氧化硅层扩散到衬底中以在场效应晶体管中形成例如源极和漏极区。

2. 发明授权

US07800203B2 Method of reducing the surface roughness of spin coated polymer films 有权
标题翻译：降低旋涂聚合物膜表面粗糙度的方法
公开(公告)号：US07800203B2
公开(公告)日：2010-09-21
申请号：US12215622
申请日：2008-06-27
申请人： Michael J. Leeson , Ebrahim Andideh
发明人： Michael J. Leeson , Ebrahim Andideh
IPC分类号： H01L21/4763
CPC分类号： H01L21/0212 , H01L21/02282 , H01L21/31053 , H01L21/31058 , H01L21/3127 , H01L21/76801 , Y10S438/964
摘要： According to one aspect of the invention, a method of constructing a memory array is provided. An insulating layer is formed on a semiconductor wafer. A first metal stack is then formed on the insulating layer and etched to form first metal lines. A polymeric layer is formed over the first metal lines and the insulating layer. A puddle of smoothing solvent is then allowed to stand on the wafer. The smoothing solvent is then removed. After the smoothing solvent is removed, the polymeric layer has a reduced surface roughness. A second metal stack is then formed on the polymeric layer and etched to form second metal lines.
摘要翻译：根据本发明的一个方面，提供了一种构造存储器阵列的方法。在半导体晶片上形成绝缘层。然后在绝缘层上形成第一金属叠层并蚀刻以形成第一金属线。在第一金属线和绝缘层之上形成聚合物层。然后将平滑溶剂的水坑放置在晶片上。然后除去平滑溶剂。在除去平滑溶剂后，聚合物层的表面粗糙度降低。然后在聚合物层上形成第二金属叠层并蚀刻以形成第二金属线。

3. 发明授权

US07396692B2 Method for increasing ferroelectric characteristics of polymer memory cells 有权
标题翻译：提高聚合物记忆体的铁电特性的方法
公开(公告)号：US07396692B2
公开(公告)日：2008-07-08
申请号：US10713307
申请日：2003-11-14
申请人： Hitesh Windlass , Ebrahim Andideh , Daniel C. Diana
发明人： Hitesh Windlass , Ebrahim Andideh , Daniel C. Diana
IPC分类号： H01L21/312 , H01L21/47
CPC分类号： B82Y10/00 , G11C11/22
摘要： Methods for improving the net remnant polarization of a polymer memory cell are disclosed. In one embodiment, the polymer material is heated above the Curie temperature of the polymer material, and the domains of the polymer material are aligned with an externally applied electric field.
摘要翻译：公开了改善聚合物存储单元净残余极化的方法。在一个实施方案中，将聚合物材料加热到聚合物材料的居里温度以上，并且聚合物材料的区域与外部施加的电场对准。

4. 发明申请

US20070134818A1 Method of reducing the surface roughness of spin coated polymer films 有权
公开(公告)号：US20070134818A1
公开(公告)日：2007-06-14
申请号：US11604948
申请日：2006-11-27
申请人： Michael Leeson , Ebrahim Andideh
发明人： Michael Leeson , Ebrahim Andideh
IPC分类号： H01L21/00
CPC分类号： H01L21/0212 , H01L21/02282 , H01L21/31053 , H01L21/31058 , H01L21/3127 , H01L21/76801 , Y10S438/964
摘要： According to one aspect of the invention, a method of constructing a memory array is provided. An insulating layer is formed on a semiconductor wafer. A first metal stack is then formed on the insulating layer and etched to form first metal lines. A polymeric layer is formed over the first metal lines and the insulating layer. A puddle of smoothing solvent is then allowed to stand on the wafer. The smoothing solvent is then removed. After the smoothing solvent is removed, the polymeric layer has a reduced surface roughness. A second metal stack is then formed on the polymeric layer and etched to form second metal lines.

5. 发明授权

US07164166B2 Memory circuit with spacers between ferroelectric layer and electrodes 有权
标题翻译：存储电路与铁电层和电极之间的间隔物
公开(公告)号：US07164166B2
公开(公告)日：2007-01-16
申请号：US10804795
申请日：2004-03-19
申请人： Mark S. Isenberger , Ebrahim Andideh
发明人： Mark S. Isenberger , Ebrahim Andideh
IPC分类号： H01L29/76
CPC分类号： H01L27/11585 , H01L27/115 , H01L27/1159 , H01L29/78391
摘要： A memory circuit is provided with a spacer formed on a support surface and positioned adjacent to a first electrode surface of a first electrode. The memory circuit further includes a ferroelectric layer formed on the first electrode and the spacer.
摘要翻译：存储器电路设置有形成在支撑表面上并且邻近第一电极的第一电极表面定位的间隔件。存储电路还包括形成在第一电极和间隔物上的铁电层。

6. 发明申请

US20070003737A1 Polymer to gold adhesion improvement by chemical and mechanical gold surface roughening 审中-公开
标题翻译：通过化学和机械金表面粗化，聚合物与金的粘附改善
公开(公告)号：US20070003737A1
公开(公告)日：2007-01-04
申请号：US11173608
申请日：2005-06-30
申请人： Rami Khalaf , Ebrahim Andideh , Caroline Merrill
发明人： Rami Khalaf , Ebrahim Andideh , Caroline Merrill
IPC分类号： B32B3/00
CPC分类号： H01R13/03 , B82Y10/00 , G11C13/0014 , G11C13/0016 , Y10T428/24612
摘要： Polymer electronics devices having reliable electrical contacts and methods of their fabrication are described. A surface of a conductive layer is modified, and a layer of polymer is formed on a modified surface of the conductive layer to create an electrical contact between the conductive layer and the layer of polymer. The electrical contact is created without adding an adhesion promoter. Modifying the surface of the conductive layer increases surface area of conductive layer and therefore improves polymer to conductive layer adhesion while preserving an original chemistry of the surface of the conductive layer. The modified surface of the conductive layer may be formed by mechanical roughening, chemical roughening, or both. The conductive layer forming the electrical contact to the polymer includes a noble metal. The polymer may be spin coated over the modified surface of the conductive layer.
摘要翻译：描述了具有可靠电接触的聚合物电子器件及其制造方法。导电层的表面被改性，并且在导电层的改性表面上形成聚合物层，以在导电层和聚合物层之间产生电接触。在不添加粘合促进剂的情况下产生电接触。改进导电层的表面增加了导电层的表面积，因此改善了聚合物与导电层的粘合性，同时保持了导电层表面的原始化学性质。导电层的改性表面可以通过机械粗糙化，化学粗糙化或两者形成。形成与聚合物的电接触的导电层包括贵金属。聚合物可以旋涂在导电层的改性表面上。

7. 发明申请

US20060105100A1 Ion implanting conductive electrodes of polymer memories 审中-公开
标题翻译：离子注入聚合物存储器的导电电极
公开(公告)号：US20060105100A1
公开(公告)日：2006-05-18
申请号：US11304046
申请日：2005-12-15
申请人： Daniel Diana , Hitesh Windlass , William Hicks , Timothy Lanfri , Michael Deangelis , Ebrahim Andideh
发明人： Daniel Diana , Hitesh Windlass , William Hicks , Timothy Lanfri , Michael Deangelis , Ebrahim Andideh
IPC分类号： B05D5/12
CPC分类号： H01L27/285 , B82Y10/00 , G11C13/0014 , G11C13/0016 , H01L51/0021
摘要： An electrode layer for a polymer memory may be implanted to increase the number of defects in the material. As a result, that same material may be utilized for the upper and lower electrodes. In particular, defects may be introduced into a TiOx layer within the electrode to match the work functions of the upper and lower electrodes.
摘要翻译：可以植入用于聚合物存储器的电极层以增加材料中的缺陷数量。结果，可以使用相同的材料用于上电极和下电极。特别地，可以将缺陷引入电极内的TiO 2层以匹配上电极和下电极的功函数。

8. 发明申请

US20050260415A1 Adhesion promoting technique 审中-公开
标题翻译：粘附促进技术
公开(公告)号：US20050260415A1
公开(公告)日：2005-11-24
申请号：US11195226
申请日：2005-08-02
申请人： Ebrahim Andideh
发明人： Ebrahim Andideh
IPC分类号： H01L21/02 , B32B27/00
CPC分类号： H01L21/02 , Y10T428/3154
摘要： A technique to promote the adhesion and uniform distribution of a spin coated film upon a ferroelectric material. At least one embodiment of the invention uses a ferroelectric material, such as PVDF/TrFE, to promote the adhesion of a spin-coated film onto a wafer.
摘要翻译：促进旋涂法在铁电材料上的粘合和均匀分布的技术。本发明的至少一个实施方案使用诸如PVDF / TrFE之类的铁电材料来促进旋涂膜粘附在晶片上。

9. 发明申请

US20050247965A1 Ferroelectric memory device with a conductive polymer layer and a method of formation 审中-公开
公开(公告)号：US20050247965A1
公开(公告)日：2005-11-10
申请号：US11184123
申请日：2005-07-18
申请人： Ebrahim Andideh
发明人： Ebrahim Andideh
IPC分类号： G11C11/22 , H01L21/82 , H01L27/108 , H01L27/115 , H01L29/72 , H01L29/76 , H01L31/119
CPC分类号： G11C11/22 , H01L27/11502 , H01L28/60
摘要： A ferroelectric memory device and a method of formation are disclosed. In one particular embodiment, a ferroelectric memory device comprises a first electrode layer formed on a substrate, a ferroelectric polymer layer formed on substantial portion of a first electrode layer, a thin layer of conductive ferroelectric polymer formed on a substantial portion of the ferroelectric polymer layer, where the ferroelectric polymer may be made conductive by doping with conductive nano-particles, and a second electrode layer formed on at least a portion of the carbon doped ferroelectric polymer layer.

10. 发明申请

US20050161827A1 Concentration graded carbon doped oxide 有权
标题翻译：浓度分级碳掺杂氧化物
公开(公告)号：US20050161827A1
公开(公告)日：2005-07-28
申请号：US11084638
申请日：2005-03-18
申请人： Ebrahim Andideh , Mark Bohr
发明人： Ebrahim Andideh , Mark Bohr
IPC分类号： H01L21/316 , H01L21/768 , H01L23/532 , H01L23/48 , H01L21/4763
CPC分类号： H01L21/76822 , H01L21/02126 , H01L21/02274 , H01L21/31633 , H01L21/76801 , H01L21/76807 , H01L23/5329 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A process for forming an interlayer dielectric layer is disclosed. The method comprises first forming a carbon-doped oxide (CDO) layer with a first concentration of carbon dopants therein. Next, the CDO layer is further formed with a second concentration of carbon dopants therein, wherein the first concentration is different than the second concentration.
摘要翻译：公开了一种用于形成层间电介质层的工艺。该方法包括首先在其中形成第一浓度的碳掺杂剂的碳掺杂氧化物（CDO）层。接下来，CDO层进一步形成有第二浓度的碳掺杂剂，其中第一浓度不同于第二浓度。

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