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    • 6. 发明申请
    • POLISHING APPARATUS AND POLISHING METHOD
    • 抛光装置和抛光方法
    • US20150258653A1
    • 2015-09-17
    • US14643529
    • 2015-03-10
    • Ebara Corporation
    • Masaya SekiTetsuji TogawaKenya Ito
    • B24B21/00H01L21/304B24B49/00
    • B24B21/002B24B9/065B24B21/00B24B21/004B24B21/02B24B27/0076B24B49/00B24B49/12
    • A polishing unit of a polishing apparatus according to an embodiment includes: a polishing head having a pressing member configured to hold a polishing tape and press the polishing tape against a peripheral portion of a substrate from above; a tape supply and recovery mechanism configured to supply the polishing tape to the polishing head and recover the polishing tape from the polishing head; a first moving mechanism configured to move the polishing head in a radial direction of the substrate; and a second moving mechanism configured to move the tape supply and recovery mechanism in the radial direction of the substrate. The positioning unit includes a positioning block having a contacting surface, and alignment of the polishing tape is conducted by the second moving mechanism moving the tape supply and recovery mechanism so that a substrate-side edge of the polishing tape makes contact with the contacting surface.
    • 根据实施例的抛光装置的抛光单元包括:抛光头,其具有构造成保持研磨带的按压构件,并且从上方将研磨带压靠在基板的周边部分; 磁带供给和恢复机构,被配置为将抛光带提供到抛光头并从抛光头回收抛光带; 第一移动机构,其构造成在所述基板的径向方向上移动所述抛光头; 以及第二移动机构,其构造成沿着所述基板的径向方向移动所述带供给和恢复机构。 定位单元包括具有接触表面的定位块,并且通过移动带供应和恢复机构的第二移动机构来导引研磨带的对准,使得研磨带的基板侧边缘与接触表面接触。
    • 7. 发明授权
    • Method for manufacturing semiconductor device
    • 制造半导体器件的方法
    • US08748289B2
    • 2014-06-10
    • US13868500
    • 2013-04-23
    • Ebara Corporation
    • Masayuki NakanishiTetsuji TogawaKenya ItoMasaya SekiKenji IwadeTakeo Kubota
    • H01L21/66H01L21/30H01L21/46H01L21/00
    • H01L21/02038B24B9/065B24B21/002B24B37/042H01L21/02087H01L21/304H01L21/76256
    • A method for manufacturing a semiconductor device makes it possible to efficiently polish with a polishing tape a peripheral portion of a silicon substrate under polishing conditions particularly suited for a deposited film and for silicon underlying the deposited film. The method includes pressing a first polishing tape against a peripheral portion of a device substrate having a deposited film on a silicon surface while rotating the device substrate at a first rotational speed, thereby removing the deposited film lying in the peripheral portion of the device substrate and exposing the underlying silicon. A second polishing tape is pressed against the exposed silicon lying in the peripheral portion of the device substrate while rotating the device substrate at a second rotational speed, thereby polishing the silicon to a predetermined depth.
    • 一种制造半导体器件的方法使得可以在抛光条件下,在特别适用于沉积膜的抛光条件和沉积膜下面的硅的抛光条件下,用研磨带有效地抛光硅衬底的周边部分。 该方法包括在第一旋转速度旋转器件基板的同时将第一研磨带压靠在具有沉积膜的器件基板的周边部分上,同时以第一转速旋转器件基板,从而去除位于器件基板的周边部分中的沉积膜, 暴露下面的硅。 在第二旋转速度旋转器件基板的同时,将第二研磨带压在位于器件基板的周边部分中的暴露的硅上,从而将硅抛光到预定的深度。