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1. 发明申请

US20100150499A1 PHOTONICS DEVICE HAVING ARRAYED WAVEGUIDE GRATING STRUCTURES 审中-公开
标题翻译：具有阵列波导光栅结构的光电器件
公开(公告)号：US20100150499A1
公开(公告)日：2010-06-17
申请号：US12477907
申请日：2009-06-04
申请人： Duk-Jun Kim , Jung-Hyung Pyo , Jung-Ho Song , In-Gyoo Kim , Gyung-Ock Kim
发明人： Duk-Jun Kim , Jung-Hyung Pyo , Jung-Ho Song , In-Gyoo Kim , Gyung-Ock Kim
IPC分类号： G02B6/34 , G02B6/26
CPC分类号： G02B6/12011
摘要： Provided is a photonics device including at least two arrayed waveguide grating structures. Each of the arrayed waveguide grating structures of the photonics device includes an input star coupler, an output star coupler, and a plurality of arrayed waveguides optically connecting the input star coupler to the output star coupler. Each of the arrayed waveguides includes at least one first section having a high confinement factor and at least two second sections having a low confinement factor. The first sections of the arrayed waveguides have the same structure.
摘要翻译：提供了包括至少两个阵列波导光栅结构的光子器件。光子器件的每个阵列波导光栅结构包括输入星形耦合器，输出星形耦合器和将输入星形耦合器光耦合到输出星形耦合器的多个阵列波导。每个阵列波导包括具有高约束因子的至少一个第一部分和具有低约束因子的至少两个第二部分。阵列波导的第一部分具有相同的结构。

2. 发明申请

US20100144075A1 METHOD OF FORMING OPTICAL WAVEGUIDE 有权
标题翻译：形成光波导的方法
公开(公告)号：US20100144075A1
公开(公告)日：2010-06-10
申请号：US12491443
申请日：2009-06-25
申请人： In-Gyoo Kim , Dong-Woo Suh , Gyung-Ock Kim
发明人： In-Gyoo Kim , Dong-Woo Suh , Gyung-Ock Kim
IPC分类号： H01L33/00
CPC分类号： G02B6/136 , G02B6/132
摘要： Provided is a method of forming optical waveguide. The method includes forming a trench on a semiconductor substrate to define an active portion, and partially oxidizing the active portion. An non-oxidized portion of the active portion is included in a core through which an optical signal passes, and an oxidized portion of the active portion is included in a cladding.
摘要翻译：提供一种形成光波导的方法。该方法包括在半导体衬底上形成沟槽以限定有源部分，并部分氧化活性部分。有源部分的非氧化部分包括在光信号通过的芯中，有源部分的氧化部分包含在包层中。

3. 发明申请

US20100159674A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20100159674A1
公开(公告)日：2010-06-24
申请号：US12488577
申请日：2009-06-21
申请人： In-Gyoo Kim , O-Kyun Kwon , Dong-Woo Suh , Gyung-Ock Kim
发明人： In-Gyoo Kim , O-Kyun Kwon , Dong-Woo Suh , Gyung-Ock Kim
IPC分类号： H01L21/20
CPC分类号： H01L21/2007 , H01L21/76251
摘要： Provided is a method of fabricating a semiconductor device. The method includes forming a first layer, a second layer, an ion implantation layer between the first and second layers, and an anti-oxidation layer on the second layer, and performing a heat treating process to form an insulating layer between the first and second layers while preventing loss of the second layer using the anti-oxidation layer.
摘要翻译：提供一种制造半导体器件的方法。该方法包括在第一层和第二层之间形成第一层，第二层，离子注入层和第二层上的抗氧化层，并进行热处理工艺，以在第一层和第二层之间形成绝缘层同时防止使用抗氧化层损失第二层。

4. 发明授权

US08017420B2 Method of forming optical waveguide 有权
标题翻译：光波导形成方法
公开(公告)号：US08017420B2
公开(公告)日：2011-09-13
申请号：US12491443
申请日：2009-06-25
申请人： In-Gyoo Kim , Dong-Woo Suh , Gyung-Ock Kim
发明人： In-Gyoo Kim , Dong-Woo Suh , Gyung-Ock Kim
IPC分类号： H01L21/00
CPC分类号： G02B6/136 , G02B6/132
摘要： Provided is a method of forming optical waveguide. The method includes forming a trench on a semiconductor substrate to define an active portion, and partially oxidizing the active portion. An non-oxidized portion of the active portion is included in a core through which an optical signal passes, and an oxidized portion of the active portion is included in a cladding.
摘要翻译：提供一种形成光波导的方法。该方法包括在半导体衬底上形成沟槽以限定有源部分，并部分氧化活性部分。有源部分的非氧化部分包括在光信号通过的芯中，有源部分的氧化部分包含在包层中。

5. 发明授权

US07738104B2 Gas sensing apparatus and method of sensing gas using the same 有权
标题翻译：气体感测装置及使用其的气体检测方法
公开(公告)号：US07738104B2
公开(公告)日：2010-06-15
申请号：US12111864
申请日：2008-04-29
申请人： In-Gyoo Kim , Gyung-Ock Kim
发明人： In-Gyoo Kim , Gyung-Ock Kim
IPC分类号： G01N21/00 , G01J5/02
CPC分类号： G01N21/3504
摘要： Provided are a gas sensing apparatus and a gas sensing method using the apparatus. The gas sensing apparatus includes a detection chamber, a light source, a light sensor, a gas source, and a controller. The light source is disposed at one end of the detection chamber, and a light sensor is disposed at the other end of the detection chamber. The gas source provides gas to the detection chamber. The controller controls the light source and the light sensor. The light source includes a laser supplying laser light, and a light scanner reflecting and scanning the laser light in the detection chamber. The controller includes a phase sensitive detector electrically connected to the light sensor.
摘要翻译：提供了一种使用该装置的气体感测装置和气体感测方法。气体感测装置包括检测室，光源，光传感器，气体源和控制器。光源设置在检测室的一端，光检测器设置在检测室的另一端。气体源向检测室提供气体。控制器控制光源和光传感器。光源包括提供激光的激光和在检测室中反射和扫描激光的光扫描器。控制器包括电连接到光传感器的相敏检测器。

6. 发明授权

US07927988B2 Method of fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07927988B2
公开(公告)日：2011-04-19
申请号：US12488577
申请日：2009-06-21
申请人： In-Gyoo Kim , O-Kyun Kwon , Dong-Woo Suh , Gyung-Ock Kim
发明人： In-Gyoo Kim , O-Kyun Kwon , Dong-Woo Suh , Gyung-Ock Kim
IPC分类号： H01L21/425
CPC分类号： H01L21/2007 , H01L21/76251
摘要： Provided is a method of fabricating a semiconductor device. The method includes forming a first layer, a second layer, an ion implantation layer between the first and second layers, and an anti-oxidation layer on the second layer, and performing a heat treating process to form an insulating layer between the first and second layers while preventing loss of the second layer using the anti-oxidation layer.
摘要翻译：提供一种制造半导体器件的方法。该方法包括在第一层和第二层之间形成第一层，第二层，离子注入层和第二层上的抗氧化层，并进行热处理工艺以在第一层和第二层之间形成绝缘层同时防止使用抗氧化层损失第二层。

7. 发明申请

US20100150500A1 OPTICAL DEVICE 失效
标题翻译：光学装置
公开(公告)号：US20100150500A1
公开(公告)日：2010-06-17
申请号：US12491454
申请日：2009-06-25
申请人： Junghyung PYO , Duk-Jun Kim , In-Gyoo Kim , Gyungock Kim
发明人： Junghyung PYO , Duk-Jun Kim , In-Gyoo Kim , Gyungock Kim
IPC分类号： G02B6/34 , G02B6/26
CPC分类号： G02B6/1228 , G02B6/12004 , G02B6/124 , G02B6/34
摘要： Provided is an optical device, which includes a substrate, a first cladding disposed on the substrate, a first optical waveguide extended in a first direction on the first cladding, and having a first refractive index, a side grating formed in at least one side of the first optical waveguide, a second optical waveguide filling a space of the side grating, extended in a second direction across the first direction on the first cladding, and having a second refractive index, and a second cladding disposed on the second optical waveguide, and having a third refractive index, wherein the first refractive index is greater than the second refractive index, and the second refractive index is greater than the third refractive index.
摘要翻译：提供了一种光学装置，其包括基板，设置在基板上的第一包层，在第一包层上沿第一方向延伸的第一光波导，并且具有第一折射率，在至少一侧形成的侧光栅所述第一光波导，填充所述侧光栅的空间的第二光波导，沿着所述第一包层上的所述第一方向的第二方向延伸并具有第二折射率，以及设置在所述第二光波导上的第二包层，以及具有第三折射率，其中所述第一折射率大于所述第二折射率，并且所述第二折射率大于所述第三折射率。

8. 发明授权

US07881574B2 Optical device 失效
标题翻译：光学装置
公开(公告)号：US07881574B2
公开(公告)日：2011-02-01
申请号：US12491454
申请日：2009-06-25
申请人： Junghyung Pyo , Duk-Jun Kim , In-Gyoo Kim , Gyungock Kim
发明人： Junghyung Pyo , Duk-Jun Kim , In-Gyoo Kim , Gyungock Kim
IPC分类号： G02B6/34
CPC分类号： G02B6/1228 , G02B6/12004 , G02B6/124 , G02B6/34
摘要： Provided is an optical device, which includes a substrate, a first cladding disposed on the substrate, a first optical waveguide extended in a first direction on the first cladding, and having a first refractive index, a side grating formed in at least one side of the first optical waveguide, a second optical waveguide filling a space of the side grating, extended in a second direction across the first direction on the first cladding, and having a second refractive index, and a second cladding disposed on the second optical waveguide, and having a third refractive index, wherein the first refractive index is greater than the second refractive index, and the second refractive index is greater than the third refractive index.
摘要翻译：提供了一种光学装置，其包括基板，设置在基板上的第一包层，在第一包层上沿第一方向延伸的第一光波导，并且具有第一折射率，在至少一侧形成的侧光栅所述第一光波导，填充所述侧光栅的空间的第二光波导，沿着所述第一包层上的所述第一方向的第二方向延伸并具有第二折射率，以及设置在所述第二光波导上的第二包层，以及具有第三折射率，其中所述第一折射率大于所述第二折射率，并且所述第二折射率大于所述第三折射率。

9. 发明申请

US20100110546A1 PHOTONICS DEVICE 审中-公开
标题翻译：光电设备
公开(公告)号：US20100110546A1
公开(公告)日：2010-05-06
申请号：US12541710
申请日：2009-08-14
申请人： Sahnggi PARK , Kap-Joong Kim , In-Gyoo Kim , Gyungock Kim
发明人： Sahnggi PARK , Kap-Joong Kim , In-Gyoo Kim , Gyungock Kim
IPC分类号： G02B5/18
CPC分类号： G02B6/305 , G02B6/264 , G02B6/32
摘要： Provided is a photonics device. The photonics device includes a distribution Bragg reflector (DBR), first and second waveguides disposed at both sides of the DBR, first lenses disposed between the DBR and the first waveguides, and second lenses disposed between the DBR and the second waveguides.
摘要翻译：提供了一种光子器件。光子器件包括分布布拉格反射器（DBR），布置在DBR的两侧的第一和第二波导，设置在DBR和第一波导之间的第一透镜以及设置在DBR和第二波导之间的第二透镜。

10. 发明申请

US20100130010A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE UNCONSTRAINED BY OPTICAL LIMIT AND APPARATUS OF FABRICATING THE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造光限制半导体器件的方法和制造半导体器件的设备
公开(公告)号：US20100130010A1
公开(公告)日：2010-05-27
申请号：US12538080
申请日：2009-08-07
申请人： Sahnggi PARK , Kap-Joong Kim , In-Gyoo Kim , Gyungock Kim
发明人： Sahnggi PARK , Kap-Joong Kim , In-Gyoo Kim , Gyungock Kim
IPC分类号： H01L21/308 , G01B11/27
CPC分类号： H01L21/0338 , G01B11/27 , G03F9/7069 , G03F9/7088 , H01L21/0337
摘要： Provided are a method of fabricating a semiconductor device unconstrained by optical limit and an apparatus of fabricating the semiconductor device. The method includes: forming an etch target layer on a substrate; forming a hard mask layer on the etch target layer; forming first mask patterns on the hard mask layer; forming first spacers on sidewalls of the first mask patterns; forming hard mask patterns having an opening by using the first mask patterns and the first spacers as a mask to etch the hard mask layer; aligning second mask patterns on the hard mask patterns to fill the opening; forming second spacers on sidewalls of the second mask patterns; forming fine mask patterns by using the second mask patterns and the second spacers as a mask to etch the hard mask patterns; and forming fine patterns by using the fine mask patterns as a mask to etch the etch target layer.
摘要翻译：提供一种制造不受光学极限约束的半导体器件的方法和制造半导体器件的装置。该方法包括：在衬底上形成蚀刻目标层; 在蚀刻靶层上形成硬掩模层; 在硬掩模层上形成第一掩模图案; 在所述第一掩模图案的侧壁上形成第一间隔物; 通过使用第一掩模图案和第一间隔物作为掩模形成具有开口的硬掩模图案以蚀刻硬掩模层; 对准硬掩模图案上的第二掩模图案以填充开口; 在所述第二掩模图案的侧壁上形成第二间隔物; 通过使用第二掩模图案和第二间隔物作为掩模来形成精细的掩模图案以蚀刻硬掩模图案; 并通过使用精细掩模图案作为掩模来形成精细图案以蚀刻蚀刻目标层。

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