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1. 发明授权

US06269018B1 Magnetic random access memory using current through MTJ write mechanism 有权
标题翻译：磁性随机存取存储器采用电流通过MTJ写入机制
公开(公告)号：US06269018B1
公开(公告)日：2001-07-31
申请号：US09549171
申请日：2000-04-13
申请人： Douwe Johannes Monsma , Stuart Stephen Papworth Parkin , Roy Edwin Scheuerlein
发明人： Douwe Johannes Monsma , Stuart Stephen Papworth Parkin , Roy Edwin Scheuerlein
IPC分类号： G11C1122
CPC分类号： H01L27/224 , G11C11/15 , G11C11/16 , G11C13/0069 , G11C2013/0073 , G11C2213/79 , H01L27/228
摘要： A non-volatile memory array includes a plurality of memory cells. Each memory cell includes a magnetic tunnel junction device having a first free ferromagnetic layer, a second free ferromagnetic layer and a highly conductive layer. The first ferromagnetic layer of each magnetic tunnel junction device extends in a direction that is substantially parallel to the second ferromagnetic layer of the magnetic tunnel junction device. The highly conductive layer of each magnetic tunnel junction device is formed between the first ferromagnetic layer and the second ferromagnetic layer of the magnetic tunnel junction device. A write current through each selected memory cell flows into the highly conductive layer and along at least a portion of the highly conductive layer. A self-field associated with the write current changes a first predetermined magnetization of the first and second ferromagnetic layers to a second predetermined magnetization. In a second embodiment, each memory cell includes a magnetic tunnel junction device having a first free ferromagnetic layer, a second pinned ferromagnetic layer, and a tunneling barrier layer formed between the first and second ferromagnetic layers. The first free ferromagnetic layer has a magnetization in a form of a vortex. The second pinned ferromagnetic layer has substantially the same shape as the shape of the first free ferromagnetic layer and a magnetization in a form of a vortex. A write current flows through the memory cell and producing a self-field that changes a magnetic vortex state of the first free ferromagnetic layer from a first predetermined handedness to a second predetermined handedness.
摘要翻译：非易失性存储器阵列包括多个存储器单元。每个存储单元包括具有第一自由铁磁层，第二自由铁磁层和高导电层的磁性隧道结器件。每个磁性隧道结装置的第一铁磁层沿与磁性隧道结装置的第二铁磁层基本平行的方向延伸。每个磁性隧道结装置的高导电层形成在磁性隧道结装置的第一铁磁层和第二铁磁层之间。通过每个选定的存储单元的写入电流流入高导电层并且沿着高导电层的至少一部分流动。与写入电流相关联的自相位将第一和第二铁磁层的第一预定磁化改变为第二预定磁化。在第二实施例中，每个存储单元包括具有第一自由铁磁层，第二钉扎铁磁层和形成在第一和第二铁磁层之间的隧道势垒层的磁性隧道结器件。第一自由铁磁层具有涡旋形式的磁化。第二钉扎铁磁层具有与第一自由铁磁层的形状和涡旋形式的磁化基本相同的形状。写入电流流过存储器单元并产生将第一自由铁磁层的磁涡流状态从第一预定手性改变为第二预定手性的自场。

2. 发明授权

US06515897B1 Magnetic random access memory using a non-linear memory element select mechanism 有权
标题翻译：磁性随机存取存储器采用非线性存储元件选择机制
公开(公告)号：US06515897B1
公开(公告)日：2003-02-04
申请号：US09549211
申请日：2000-04-13
申请人： Douwe Johannes Monsma , Stuart Stephen Papworth Parkin , Roy Edwin Scheuerlein
发明人： Douwe Johannes Monsma , Stuart Stephen Papworth Parkin , Roy Edwin Scheuerlein
IPC分类号： G11C1115
CPC分类号： G11C11/15
摘要： A non-volatile memory array having a substrate, a first plurality of electrically conductive traces formed on the substrate, a second plurality of electrically conductive traces formed on the substrate and overlapping first plurality of traces at a plurality of intersection regions, and a plurality of memory cells. Each memory cell is located at an intersection region between one of the first plurality of traces and one of the second plurality of traces. At least one memory cell includes a non-linear magnetic tunnel junction storage element. The non-linear magnetic tunnel junction storage element has at least a first ferromagnetic layer, a barrier layer and a second ferromagnetic layer. The non-linear magnetic tunnel junction storage element has a non-linearity that is defined by a current having a first magnitude flowing through the non-linear magnetic tunnel junction storage element for a bias across the non-linear magnetic tunnel junction storage element of about 0.5 VA that is ten times or more smaller than a current having a second magnitude flowing through the non-linear magnetic tunnel junction storage element for a bias across the non-linear magnetic tunnel junction storage element of about 1 VA, where VA is an operating voltage for a memory cell. The non-linearity is used for minimizing sneak currents through unselected cells, and allowing read or write selection of a particular memory element in a large array.
摘要翻译：一种非易失性存储器阵列，其具有衬底，形成在衬底上的第一多个导电迹线，形成在衬底上的第二多个导电迹线，并且在多个交叉区域上与第一多个迹线重叠，记忆细胞每个存储器单元位于第一多个迹线之一和第二多个迹线中的一个之间的交叉区域。至少一个存储单元包括非线性磁性隧道结存储元件。非线性磁性隧道结存储元件具有至少第一铁磁层，阻挡层和第二铁磁层。非线性磁性隧道结存储元件具有非线性，其由具有流过非线性磁性隧道结存储元件的第一幅度的电流限定，用于横跨非线性磁性隧道结存储元件的偏置约为 0.5VA是比具有第二幅度的电流的十倍或更小，该电流流过非线性磁性隧道结存储元件，用于跨过非线性磁性隧道结存储元件的约1VA的偏压，其中VA是操作的一个存储单元的电压。非线性用于通过未选择的单元最小化潜行电流，并允许以大阵列对特定存储器元件进行读取或写入选择。

3. 发明授权

US06331944B1 Magnetic random access memory using a series tunnel element select mechanism 有权
标题翻译：磁性随机存取存储器采用串联隧道元素选择机制
公开(公告)号：US06331944B1
公开(公告)日：2001-12-18
申请号：US09549172
申请日：2000-04-13
申请人： Douwe Johannes Monsma , Stuart Stephen Papworth Parkin , Roy Edwin Scheuerlein
发明人： Douwe Johannes Monsma , Stuart Stephen Papworth Parkin , Roy Edwin Scheuerlein
IPC分类号： G11C1300
CPC分类号： H01L27/224 , G11C11/15
摘要： A non-volatile memory array includes first and second pluralities of electrically conductive traces formed on a substrate. The second plurality of electrically conductive traces overlap first plurality of traces at a plurality of intersection regions. Each of a plurality of memory cells is located at an intersection region between one of the first plurality of traces and one of the second plurality of traces. At least one of the memory cells includes a non-linear selection element in series with a magnetic tunnel junction storage element. The non-linear selection element includes at least a first metallic electrode layer, a barrier layer and a second metallic electrode layer metal. The non-linear selection element has a non-linearity defined by a current having a first magnitude flowing through the non-linear selection element for a first bias voltage across the non-linear selection element that is ten times or more smaller than a current having a second magnitude flowing through the non-linear selection element for a second bias voltage across the non-linear selection element, such that the second bias voltage is about two times greater than the first bias voltage. The magnetic tunnel junction storage element includes at least a first ferromagnetic layer, a thin insulating layer and a second ferromagnetic layer.
摘要翻译：非易失性存储器阵列包括形成在衬底上的第一和第二多个导电迹线。第二多个导电迹线在多个交叉区域处与第一多个迹线重叠。多个存储器单元中的每一个位于第一多个迹线中的一个和第二多个迹线中的一个之间的交叉区域。至少一个存储单元包括与磁性隧道结存储元件串联的非线性选择元件。非线性选择元件至少包括第一金属电极层，阻挡层和第二金属电极层金属。非线性选择元件具有由具有流过非线性选择元件的第一幅度的电流定义的非线性，该电流是非线性选择元件的跨越非线性选择元件的第一偏置电压的十倍或更小，第二幅度流经所述非线性选择元件，以跨越所述非线性选择元件的第二偏置电压流动，使得所述第二偏置电压大约是所述第一偏置电压的两倍。磁性隧道结存储元件至少包括第一铁磁层，薄绝缘层和第二铁磁层。

4. 发明授权

US5640343A Magnetic memory array using magnetic tunnel junction devices in the memory cells 失效
标题翻译：磁存储阵列在存储单元中使用磁性隧道结器件
公开(公告)号：US5640343A
公开(公告)日：1997-06-17
申请号：US618004
申请日：1996-03-18
申请人： William Joseph Gallagher , James Harvey Kaufman , Stuart Stephen Papworth Parkin , Roy Edwin Scheuerlein
发明人： William Joseph Gallagher , James Harvey Kaufman , Stuart Stephen Papworth Parkin , Roy Edwin Scheuerlein
IPC分类号： G11C11/15 , G11C11/16 , H01L21/8246 , H01L27/22 , G11C13/00
CPC分类号： H01L27/224 , B82Y10/00 , G11C11/15 , G11C11/16
摘要： A nonvolatile magnetic random access memory (MRAM) is an array of individual magnetic memory cells. Each memory cell is a magnetic tunnel junction (MTJ) element and a diode electrically connected in series. Each MTJ is formed of a pinned ferromagnetic layer whose magnetization direction is prevented from rotating, a free ferromagnetic layer whose magnetization direction is free to rotate between states of parallel and antiparallel to the fixed magnetization of the pinned ferromagnetic layer, and an insulating tunnel barrier between and in contact with the two ferromagnetic layers. Each memory cell has a high resistance that is achieved in a very small surface area by controlling the thickness, and thus the electrical barrier height, of the tunnel barrier layer. The memory cells in the array are controlled by only two lines, and the write currents to change the magnetic state of an MTJ, by use of the write currents' inherent magnetic fields to rotate the magnetization of the free layer, do not pass through the tunnel barrier layer. All MTJ elements, diodes, and contacts are vertically arranged at the intersection regions of the two lines and between the two lines to minimize the total MRAM surface area. The power expended to read or sense the memory cell's magnetic state is reduced by the high resistance of the MTJ and by directing the sensing current through a single memory cell.
摘要翻译：非易失磁性随机存取存储器（MRAM）是单个磁存储单元阵列。每个存储单元是磁性隧道结（MTJ）元件和串联电连接的二极管。每个MTJ由其磁化方向被阻止旋转的被钉扎的铁磁层形成，一个自由铁磁层，其磁化方向在被固定的铁磁层的固定磁化平行和反平行的状态之间自由旋转;以及绝缘隧道势垒并与两个铁磁层接触。每个存储单元具有通过控制隧道势垒层的厚度以及因此控制电势势垒高度而在非常小的表面积中实现的高电阻。阵列中的存储单元仅由两条线控制，并且通过使用写入电流的固有磁场来旋转自由层的磁化，改变MTJ的磁状态的写入电流不会通过隧道势垒层。所有MTJ元件，二极管和触点垂直布置在两条线和两条线之间的交叉区域，以最小化总MRAM表面积。消耗读取或感测存储单元的磁状态的功率被MTJ的高电阻降低，并通过将感测电流引导通过单个存储单元。

5. 发明授权

US08936293B2 Robotic device for substrate transfer applications 有权
标题翻译：用于衬底转移应用的机器人装置
公开(公告)号：US08936293B2
公开(公告)日：2015-01-20
申请号：US13333688
申请日：2011-12-21
申请人： Christopher O. Lada , Stuart Stephen Papworth Parkin , Mahesh Govind Samant
发明人： Christopher O. Lada , Stuart Stephen Papworth Parkin , Mahesh Govind Samant
IPC分类号： B66F19/00
CPC分类号： H01L21/67742 , H01L21/68707
摘要： A device for use in the semiconductor industry includes a robotic arm whose end effector includes electromagnetic means to hold a substrate carrier. A pushing member can move independently of a flat, spatula-like portion of the device and is configured to exert force against the substrate carrier while the spatula-like portion is retracted from the substrate carrier, after the substrate carrier has been brought to its intended position. In this manner, the position of the substrate carrier is maintained at its intended position as the spatula-like portion is retracted.
摘要翻译：用于半导体工业的器件包括机器人臂，其末端执行器包括用于保持衬底载体的电磁装置。推动构件可以独立于装置的平坦的刮铲状部分移动，并且构造成在基板载体已经达到其预期之后，当刮板状部分从基板载体缩回时，向基板载体施加力位置。以这种方式，当刮刀状部分缩回时，基板载体的位置保持在其预定位置。

6. 发明授权

US08638601B1 Domain wall motion in perpendicularly magnetized wires having magnetic multilayers with engineered interfaces 有权
标题翻译：具有设计接口的磁性多层的垂直磁化线中的畴壁运动
公开(公告)号：US08638601B1
公开(公告)日：2014-01-28
申请号：US13543061
申请日：2012-07-06
申请人： Stuart Stephen Papworth Parkin , Luc Thomas , See-Hun Yang
发明人： Stuart Stephen Papworth Parkin , Luc Thomas , See-Hun Yang
IPC分类号： G11C11/14
CPC分类号： G11C19/0841 , G11C11/14 , G11C11/161 , G11C11/1675
摘要： Magnetic wires that include cobalt, nickel, and platinum layers show improved domain wall motion properties, when the domain walls are driven by pulses of electrical current. These wires exhibit perpendicular magnetic anisotropy, thereby supporting the propagation of narrow domain walls. The direction of motion of the domain walls can be influenced by the order in which the platinum and cobalt layers are arranged.
摘要翻译：当畴壁由电流脉冲驱动时，包括钴，镍和铂层的磁线显示改善的畴壁运动特性。这些线表现出垂直的磁各向异性，从而支持窄畴壁的传播。畴壁的运动方向可能受到排列铂和钴层的顺序的影响。

7. 发明授权

US08008097B2 MgO tunnel barriers and method of formation 有权
标题翻译： MgO隧道障碍及形成方法
公开(公告)号：US08008097B2
公开(公告)日：2011-08-30
申请号：US12554420
申请日：2009-09-04
申请人： Stuart Stephen Papworth Parkin
发明人： Stuart Stephen Papworth Parkin
IPC分类号： H01L21/285
CPC分类号： H01L43/08 , H01L43/10 , H01L43/12
摘要： MgO tunnel barriers are formed by depositing a thin layer of Mg on a suitable underlayer, and then directing oxygen and additional Mg towards the Mg layer. The oxygen reacts with the additional Mg and the Mg in the Mg layer to form a MgO tunnel barrier that enjoys excellent tunneling characteristics. The MgO tunnel barriers so formed may be used in magnetic tunnel junctions having tunneling magnetoresistance (TMR) values of greater than 100%. The highest TMR values are observed for junctions that have been annealed and that have a (100) crystallographic orientation.
摘要翻译：通过在合适的底层上沉积薄层的Mg，然后将氧和附加的Mg导向Mg层，形成MgO隧道势垒。氧与Mg层中的附加Mg和Mg反应形成具有优异隧道特性的MgO隧道势垒。如此形成的MgO隧道势垒可用于具有大于100％的隧道磁阻（TMR）值的磁隧道结。观察到已经退火并具有（100）晶体取向的结的最高TMR值。

8. 发明申请

US20110140762A1 Resistive Switching in Nitrogen-doped MgO 有权
标题翻译：氮掺杂MgO中的电阻开关
公开(公告)号：US20110140762A1
公开(公告)日：2011-06-16
申请号：US12636588
申请日：2009-12-11
申请人： Xin Jiang , Stuart Stephen Papworth Parkin , Mahesh Govind Samant , Cheng-Han Yang
发明人： Xin Jiang , Stuart Stephen Papworth Parkin , Mahesh Govind Samant , Cheng-Han Yang
IPC分类号： H03K17/00 , H01L45/00
CPC分类号： G11C11/5685 , C23C14/081 , C23C14/35 , G11C11/5671 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C17/16 , G11C17/165 , G11C2013/0073 , G11C2013/009 , G11C2213/76 , G11C2213/79 , H01L27/2436 , H01L27/2463 , H01L45/08 , H01L45/085 , H01L45/1233 , H01L45/146 , H01L45/1616 , H01L45/165
摘要： Nitrogen-doped MgO insulating layers exhibit voltage controlled resistance states, e.g., a high resistance and a low resistance state. Patterned nano-devices on the 100 nm scale show highly reproducible switching characteristics. The voltage levels at which such devices are switched between the two resistance levels can be systematically lowered by increasing the nitrogen concentration. Similarly, the resistance of the high resistance state can be varied by varying the nitrogen concentration, and decreases by orders of magnitude by varying the nitrogen concentrations by a few percent. On the other hand, the resistance of the low resistance state is nearly insensitive to the nitrogen doping level. The resistance of single Mg50O50-xNx layer devices can be varied over a wide range by limiting the current that can be passed during the SET process. Associated data storage devices can be constructed.
摘要翻译：氮掺杂的MgO绝缘层表现出电压控制的电阻状态，例如高电阻和低电阻状态。 100 nm刻度的图案化纳米器件显示出高度可重现的开关特性。通过增加氮浓度可以使这些装置在两个电阻水平之间切换的电压水平被系统地降低。类似地，可以通过改变氮浓度来改变高电阻状态的电阻，并且通过将氮浓度改变几个百分比来降低数量级。另一方面，低电阻状态的电阻对氮掺杂水平几乎不敏感。单个Mg50O50-xNx层器件的电阻可以通过限制在SET过程中可以通过的电流在宽范围内变化。可以构建相关的数据存储设备。

9. 发明授权

US07943399B2 Spin-current switched magnetic memory element suitable for circuit integration and method of fabricating the memory element 有权
标题翻译：适用于电路集成的旋转电流开关磁存储元件和制造存储元件的方法
公开(公告)号：US07943399B2
公开(公告)日：2011-05-17
申请号：US12548428
申请日：2009-08-27
申请人： Jonathan Zanhong Sun , Rolf Allenspach , Stuart Stephen Papworth Parkin , John Casimir Slonczewski , Bruce David Terris
发明人： Jonathan Zanhong Sun , Rolf Allenspach , Stuart Stephen Papworth Parkin , John Casimir Slonczewski , Bruce David Terris
IPC分类号： H01L21/00
CPC分类号： H01L43/02 , B82Y25/00 , G11C11/16 , G11C11/161 , H01F10/3254 , H01F10/3263 , H01F10/3286 , H01F41/308 , H01L27/222 , H01L43/08 , H01L43/12
摘要： A magnetic memory element switchable by current injection includes a plurality of magnetic layers, at least one of the plurality of magnetic layers having a perpendicular magnetic anisotropy component and including a current-switchable magnetic moment, and at least one barrier layer formed adjacent to the plurality of magnetic layers (e.g., between two of the magnetic layers). The memory element has the switching threshold current and device impedance suitable for integration with complementary metal oxide semiconductor (CMOS) integrated circuits.
摘要翻译：通过电流注入可切换的磁存储元件包括多个磁性层，所述多个磁性层中的至少一个具有垂直磁各向异性分量并且包括电流可切换磁矩，以及至少一个与所述多个磁性层相邻形成的阻挡层的磁性层（例如，两层磁性层之间）。存储元件具有适合与互补金属氧化物半导体（CMOS）集成电路集成的开关阈值电流和器件阻抗。

10. 发明授权

US07906231B2 Magnetic tunnel barriers and associated magnetic tunnel junctions with high tunneling magnetoresistance 有权
标题翻译：磁隧道势垒和具有高隧道磁阻的相关磁隧道结
公开(公告)号：US07906231B2
公开(公告)日：2011-03-15
申请号：US11931110
申请日：2007-10-31
申请人： Stuart Stephen Papworth Parkin
发明人： Stuart Stephen Papworth Parkin
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11C11/16 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01L43/08 , Y10T428/1107 , Y10T428/1114 , Y10T428/1121 , Y10T428/115 , Y10T428/1193
摘要： Magnetic tunneling devices are formed from a first body centered cubic (bcc) magnetic layer and a second bcc magnetic layer. At least one spacer layer of bcc material between these magnetic layers exchange couples the first and second bcc magnetic layers. A tunnel barrier in proximity with the second magnetic layer permits spin-polarized current to pass between the tunnel barrier and the second layer; the tunnel barrier may be either MgO and Mg—ZnO. The first magnetic layer, the spacer layer, the second magnetic layer, and the tunnel barrier are all preferably (100) oriented. The MgO and Mg—ZnO tunnel barriers are prepared by first depositing a metallic layer on the second magnetic layer (e.g., a Mg layer), thereby substantially reducing the oxygen content in this magnetic layer, which improves the performance of the tunnel barriers.
摘要翻译：磁隧道器件由第一体心立方（bcc）磁性层和第二bcc磁性层形成。这些磁性层之间的至少一个bcc材料间隔层交换耦合第一和第二bcc磁性层。靠近第二磁性层的隧道势垒允许自旋极化电流在隧道势垒和第二层之间通过; 隧道势垒可以是MgO和Mg-ZnO。第一磁性层，间隔层，第二磁性层和隧道势垒都优选为（100）取向。通过首先在第二磁性层（例如，Mg层）上沉积金属层来制备MgO和Mg-ZnO隧道势垒，从而大大降低该磁性层中的氧含量，这改善了隧道势垒的性能。

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