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    • 1. 发明授权
    • On-board laser-triggered multi-layer semiconductor power switch
    • 板载激光触发多层半导体电源开关
    • US6154477A
    • 2000-11-28
    • US76110
    • 1998-05-12
    • Douglas M. WeidenheimerSol SchneiderJeffry Golden
    • Douglas M. WeidenheimerSol SchneiderJeffry Golden
    • H01L31/167H01L29/74H01S3/30H01S5/00
    • H01L31/167H01S5/4025
    • A laser activated semiconductor switching device has a semiconductor structure housed in a semiconductor structure housing, and a laser array assembly directly connected to the semiconductor structure housing. The laser array assembly houses a plurality of laser diodes and diode control circuitry which energizes the laser diodes to emit light directly onto a surface of the semiconductor structure, which can be the cathode or anode surface, to cause the semiconductor structure to generate current carriers which enable passage of current through the semiconductor structure. The device can further include a second laser array assembly which is connected to the side of the semiconductor structure housing opposite to that on which the first laser array assembly is connected, and is configured to operate in a manner similar to the first laser array assembly. The surfaces of the semiconductor structure can be covered with metal layers having openings which permit the passage of the laser light into the semiconductor structure. The metal layers are reflective to the laser light and prevent the laser light that has passed into the semiconductor structure from exiting the structure to improve current carrier generation.
    • 激光激活半导体开关器件具有容纳在半导体结构外壳中的半导体结构和直接连接到半导体结构外壳的激光器阵列组件。 激光阵列组件容纳多个激光二极管和二极管控制电路,激光二极管和二极管控制电路激励激光二极管,以将光直接发射到可以是阴极或阳极表面的半导体结构的表面上,以使半导体结构产生电流载流子, 使电流通过半导体结构。 该装置还可以包括第二激光阵列组件,其连接到与第一激光阵列组件相连的半导体结构壳体的侧面,并且被配置为以类似于第一激光阵列组件的方式操作。 半导体结构的表面可以被具有允许激光通过半导体结构的开口的金属层覆盖。 金属层对激光反射,并且防止已经进入半导体结构的激光离开结构以改善电流载流子的产生。
    • 3. 发明授权
    • Modulator and clamper for variable impedance load
    • 用于可变阻抗负载的调制器和钳位器
    • US4024430A
    • 1977-05-17
    • US617881
    • 1975-09-29
    • Sol Schneider
    • Sol Schneider
    • H03K3/55H03K5/08
    • H03K3/55H03K5/08
    • A transformerless Blumlein type circuit is combined with a novel clamper circuit for driving a cold cathode electron beam gun for a CO.sub.2 laser where the E-beam gun has resistance essentially infinite at the leading end of a driving pulse and has several ohms resistance at the end of the driving pulse. At the leading end of a driving pulse the voltage output of the Blumlein circuit is twice the rated load voltage since the load as infinite impedance. The clamper circuit limits the pulse voltage across the load to its rated voltage and the excess power from the Blumlein circuit over that required by the load is dissipated in the clamper circuit. The clamper circuit as variable impedance that is approximately the inverse of the load impedance during a driving pulse so that the Blumlein circuit looks into an approximately constant impedance equal to its impedance.
    • 无变压器Blumlein型电路与用于驱动CO 2激光器的冷阴极电子束枪的新型钳位电路组合,其中电子束枪在驱动脉冲的前端具有基本上无限大阻力,并且在末端具有几欧姆电阻 的驱动脉冲。 在驱动脉冲的前端,Blumlein电路的电压输出是额定负载电压的两倍,因为负载为无限阻抗。 钳位电路将负载上的脉冲电压限制到其额定电压,并且来自Blumlein电路的过剩功率超过负载所需的功率在钳位电路中消耗。 钳位电路作为可变阻抗,其大致与驱动脉冲期间的负载阻抗相反,使得Blumlein电路看起来等于其阻抗的近似恒定的阻抗。