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1. 发明申请

US20120292746A1 SEMICONDUCTOR DEVICES INCLUDING STRESS RELIEF STRUCTURES 有权
标题翻译：包括应力消除结构的半导体器件
公开(公告)号：US20120292746A1
公开(公告)日：2012-11-22
申请号：US13418915
申请日：2012-03-13
申请人： Dosun LEE , Kiyoung YUN , Yeonglyeol PARK , Gilheyun CHOI , Kisoon BAE , Kwangjin MOON
发明人： Dosun LEE , Kiyoung YUN , Yeonglyeol PARK , Gilheyun CHOI , Kisoon BAE , Kwangjin MOON
IPC分类号： H01L25/07 , H01L23/522
CPC分类号： H01L21/6835 , H01L21/7682 , H01L21/76898 , H01L23/3128 , H01L23/481 , H01L23/585 , H01L24/48 , H01L25/0657 , H01L25/18 , H01L2221/68327 , H01L2221/6834 , H01L2224/02166 , H01L2224/0401 , H01L2224/05567 , H01L2224/0557 , H01L2224/05624 , H01L2224/05647 , H01L2224/05684 , H01L2224/06181 , H01L2224/131 , H01L2224/16145 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2224/48227 , H01L2225/0651 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2924/00014 , H01L2924/12042 , H01L2924/1305 , H01L2924/13091 , H01L2924/1431 , H01L2924/1434 , H01L2924/15311 , H01L2924/181 , H01L2924/014 , H01L2924/00 , H01L2224/05552 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A microelectronic device includes a substrate having at least one microelectronic component on a surface thereof, a conductive via electrode extending through the substrate, and a stress relief structure including a gap region therein extending into the surface of the substrate between the via electrode and the microelectronic component. The stress relief structure is spaced apart from the conductive via such that a portion of the substrate extends therebetween. Related devices and fabrication methods are also discussed.
摘要翻译：微电子器件包括在其表面上具有至少一个微电子元件的基板，延伸穿过基板的导电通孔电极，以及包括其间延伸到基板表面之间的间隙区域的应力消除结构，该通孔电极和微电子零件。应力消除结构与导电通孔间隔开，使得衬底的一部分在其间延伸。还讨论了相关设备和制造方法。

2. 发明申请

US20080296660A1 LOW RESISTIVITY CONDUCTIVE STRUCTURES, DEVICES AND SYSTEMS INCLUDING SAME, AND METHODS FORMING SAME 审中-公开
标题翻译：低电阻导电结构，包括其的装置和系统及其形成方法
公开(公告)号：US20080296660A1
公开(公告)日：2008-12-04
申请号：US11947006
申请日：2007-11-29
申请人： Jinho PARK , Sang-Woo LEE , Ho-Ki LEE , Gilheyun CHOI
发明人： Jinho PARK , Sang-Woo LEE , Ho-Ki LEE , Gilheyun CHOI
IPC分类号： H01L29/00 , C23C16/00 , B32B7/02
CPC分类号： H01L21/28061 , H01L21/28556 , H01L21/67207 , H01L21/76876 , H01L21/76877 , H01L23/53266 , H01L29/40114 , H01L29/40117 , H01L29/4234 , H01L29/4925 , H01L29/66575 , H01L29/78 , H01L29/792 , H01L2924/0002 , H01L2924/09701 , H01L2924/3011 , Y10T428/24942 , H01L2924/00
摘要： A conductive structure and method for making same is disclosed and includes a first nucleation layer formed by performing a cyclic deposition process on a substrate, a second nucleation layer formed on the first nucleation layer by a CVD process, and a bulk metal layer formed on the second nucleation layer.
摘要翻译：公开了导电结构及其制造方法，包括通过在基板上进行循环沉积工艺而形成的第一成核层，通过CVD工艺在第一成核层上形成的第二成核层和形成在第一成核层上的体金属层第二成核层。

3. 发明申请

US20150343495A1 APPARATUS AND METHODS FOR TREATING SUBSTRATES 审中-公开
标题翻译：用于处理基板的装置和方法
公开(公告)号：US20150343495A1
公开(公告)日：2015-12-03
申请号：US14682349
申请日：2015-04-09
申请人： Kyoungseob KIM , Yongsun KO , SeokHoon KIM , Kuntack LEE , Hyosan LEE , Gilheyun CHOI
发明人： Kyoungseob KIM , Yongsun KO , SeokHoon KIM , Kuntack LEE , Hyosan LEE , Gilheyun CHOI
IPC分类号： B08B3/02 , H01L21/67
CPC分类号： H01L21/67051 , B08B3/024
摘要： An apparatus for treating a substrate includes a spin chuck supporting a substrate, a nozzle movably disposed on the spin chuck, the nozzle providing droplets of a treatment liquid onto a surface of the substrate, and a nozzle arm moving the nozzle above the spin chuck, wherein the nozzle arm moves the nozzle horizontally along the surface of the substrate, and vertically with respect to the surface of the substrate, wherein the nozzle arm moves the nozzle between an edge of the substrate and a center of the substrate, the nozzle moving away from the surface of the substrate while approaching toward the center of the substrate, and wherein droplets provided onto the center of the substrate have a smaller vertical spacing than that of droplets provided onto the edge of the substrate.
摘要翻译：一种用于处理基板的设备包括支撑基板的旋转卡盘，可移动地设置在旋转卡盘上的喷嘴，喷嘴将处理液体的液滴提供到基板的表面上，喷嘴臂使喷嘴移动到旋转卡盘上方，其中所述喷嘴臂沿着所述基板的表面水平地移动所述喷嘴，并相对于所述基板的表面垂直移动，其中所述喷嘴臂使所述喷嘴在所述基板的边缘和所述基板的中心之间移动，所述喷嘴移开从衬底的表面接近朝向衬底的中心，并且其中设置在衬底的中心上的液滴具有比设置在衬底的边缘上的液滴更小的垂直间隔。

4. 发明申请

US20130210222A1 SEMICONDUCTOR DEVICES HAVING CONDUCTIVE VIA STRUCTURES AND METHODS FOR FABRICATING THE SAME 有权
标题翻译：具有结构导电性的半导体器件及其制造方法
公开(公告)号：US20130210222A1
公开(公告)日：2013-08-15
申请号：US13758239
申请日：2013-02-04
申请人： Ho-Jin LEE , Kyu-ha LEE , Gilheyun CHOI , YongSoon CHOI , Pil-Kyu KANG , Byung-Lyul PARK , Hyunsoo CHUNG
发明人： Ho-Jin LEE , Kyu-ha LEE , Gilheyun CHOI , YongSoon CHOI , Pil-Kyu KANG , Byung-Lyul PARK , Hyunsoo CHUNG
IPC分类号： H01L21/768 , H01L23/00
CPC分类号： H01L21/768 , H01L21/02271 , H01L21/6836 , H01L21/76898 , H01L23/3192 , H01L23/481 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/13 , H01L25/0657 , H01L2221/68372 , H01L2224/02372 , H01L2224/0401 , H01L2224/05009 , H01L2224/05027 , H01L2224/05548 , H01L2224/05567 , H01L2224/05568 , H01L2224/0557 , H01L2224/05571 , H01L2224/06181 , H01L2224/13006 , H01L2224/13009 , H01L2224/13022 , H01L2224/13023 , H01L2224/13025 , H01L2224/13076 , H01L2224/13082 , H01L2224/131 , H01L2224/14181 , H01L2224/16146 , H01L2224/16225 , H01L2224/16227 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06548 , H01L2225/06565 , H01L2924/00014 , H01L2924/181 , H01L2924/351 , H01L2924/00012 , H01L2924/014 , H01L2224/05552 , H01L2924/00
摘要： In one embodiment, the method includes forming a conductive via structure in a base layer. The base layer has a first surface and a second surface, and the second surface is opposite the first surface. The method further includes removing the second surface of the base layer to expose the conductive via structure such that the conductive via structure protrudes from the second surface, and forming a first lower insulating layer over the second surface such that an end surface of the conductive via structure remains exposed by the first lower insulating layer.
摘要翻译：在一个实施例中，该方法包括在基层中形成导电通孔结构。基层具有第一表面和第二表面，并且第二表面与第一表面相对。该方法还包括去除基底层的第二表面以暴露导电通路结构，使得导电通孔结构从第二表面突出，并且在第二表面上形成第一下绝缘层，使得导电通孔的端表面结构保持由第一下绝缘层暴露。

5. 发明申请

US20160064193A1 SEMICONDUCTOR MANUFACTURING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME 审中-公开
标题翻译：半导体制造装置及使用该半导体器件的半导体器件的制造方法
公开(公告)号：US20160064193A1
公开(公告)日：2016-03-03
申请号：US14734183
申请日：2015-06-09
申请人： Hogon KIM , Hyunsu KIM , Jang-Hee LEE , Gilheyun CHOI , Jongwon HONG
发明人： Hogon KIM , Hyunsu KIM , Jang-Hee LEE , Gilheyun CHOI , Jongwon HONG
IPC分类号： H01J37/32
CPC分类号： H01J37/32165 , H01J37/32091 , H01J37/32174
摘要： A semiconductor manufacturing apparatus includes a lower electrode, an upper electrode, first and second high-frequency power sources, and a controller. The lower electrode is disposed in a process chamber, and the upper electrode is disposed over the lower electrode in the process chamber. The first high-frequency power source is connected to one of the lower electrode and the upper electrode, and the second high-frequency power source is connected to one of the lower electrode and the upper electrode. The controller is connected to the first and second high-frequency power sources. The first high-frequency power source generates a first high-frequency power used to perform a first capacitively coupled plasma (CCP) process. The second high-frequency power source generates a second high-frequency power used to perform a second CCP process. The controller controls the second high-frequency power source to interrupt the second high-frequency power during the first CCP process.
摘要翻译：半导体制造装置包括下电极，上电极，第一高频电源和第二高频电源以及控制器。下电极设置在处理室中，上电极设置在处理室中的下电极之上。第一高频电源连接到下电极和上电极中的一个，第二高频电源连接到下电极和上电极之一。控制器连接到第一和第二高频电源。第一高频电源产生用于执行第一电容耦合等离子体（CCP）过程的第一高频功率。第二高频电源产生用于执行第二CCP处理的第二高频电源。控制器控制第二高频电源，以在第一CCP过程中中断第二高频电源。

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