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1. 发明授权

US5609778A Process for high contrast marking on surfaces using lasers 失效
标题翻译：使用激光对表面进行高对比度标记的工艺
公开(公告)号：US5609778A
公开(公告)日：1997-03-11
申请号：US460294
申请日：1995-06-02
申请人： Doris P. Pulaski , Richard T. Anderson , Christopher L. Tessler , Stephen J. Tirch, III , Dawn J. Tudryn
发明人： Doris P. Pulaski , Richard T. Anderson , Christopher L. Tessler , Stephen J. Tirch, III , Dawn J. Tudryn
IPC分类号： B23K26/06 , B23K26/38 , B41M1/26 , B41M5/24
CPC分类号： B41M5/24 , B23K26/066 , B23K26/386 , B41M1/26
摘要： A process for forming parabolic micro-reflectors on an object includes the steps of placing the object proximate to a transfer lens system, shining a laser beam through the lens system, a mask and a wobble plate and onto the object, the wobble plate wobbling the laser beam such that a parabolic shaped micro-reflector is formed on the object.
摘要翻译：用于在物体上形成抛物面微反射器的过程包括以下步骤：将物体靠近转印透镜系统，将激光束照射通过透镜系统，掩模和摆盘并移动到物体上，摆动板摆动激光束，使得在物体上形成抛物线状的微反射器。

2. 发明授权

US06706621B2 Wafer integrated rigid support ring 有权
公开(公告)号：US06706621B2
公开(公告)日：2004-03-16
申请号：US10302412
申请日：2002-11-22
申请人： Harry D. Cox , David P. Daniel , Leonard J. Gardecki , Albert J. Gregoritsch, III , Ruth A. Machell Julianelle , Charles H. Keeler , Doris P. Pulaski , Mary A. Schaffer , David L. Smith , David J. Specht , Adolf E. Wirsing
发明人： Harry D. Cox , David P. Daniel , Leonard J. Gardecki , Albert J. Gregoritsch, III , Ruth A. Machell Julianelle , Charles H. Keeler , Doris P. Pulaski , Mary A. Schaffer , David L. Smith , David J. Specht , Adolf E. Wirsing
IPC分类号： H01L2144
CPC分类号： H01L23/528 , H01L23/544 , H01L24/10 , H01L24/11 , H01L24/13 , H01L2223/54406 , H01L2223/54493 , H01L2224/05001 , H01L2224/05022 , H01L2224/05111 , H01L2224/05124 , H01L2224/05147 , H01L2224/05171 , H01L2224/05568 , H01L2224/05572 , H01L2224/05573 , H01L2224/05644 , H01L2224/05647 , H01L2224/13 , H01L2224/13099 , H01L2224/131 , H01L2224/13611 , H01L2924/0001 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/0102 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01057 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/15787 , H01L2924/00014 , H01L2924/00
摘要： A shadow mask for depositing solder bumps includes additional dummy holes located adjacent holes corresponding to most of the perimeter chips of the wafer. The additional dummy provide more uniform plasma etching of contacts of the wafer, improve etching of contacts of perimeter chips, and lower contact resistance of contacts of perimeter chips. The extra holes also provide solder bumps outside the perimeter chips that can be used to support a second shadow mask for deposition of an additional material, such as tin, on the reflowed solder bumps for mounting the chips on a plastic substrate at low temperature. An improved mask to wafer alignment aid is formed from standard solder bumps. The improved alignment aid avoids damage to test probes and provides improved course alignment.

3. 发明授权

US07115207B2 Moly mask construction and process 失效
标题翻译： Moly面膜施工和工艺
公开(公告)号：US07115207B2
公开(公告)日：2006-10-03
申请号：US10604213
申请日：2003-07-01
申请人： Peter H. Berasi , Michael F. Jerome , Doris P. Pulaski , Robert P. Rippstein
发明人： Peter H. Berasi , Michael F. Jerome , Doris P. Pulaski , Robert P. Rippstein
IPC分类号： B44C1/22 , C25F3/00 , G03F1/00
CPC分类号： H01L21/6835 , G03F7/0015 , H01L24/11 , H01L2224/11003 , H01L2224/1132 , H01L2224/13099 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01015 , H01L2924/01019 , H01L2924/01033 , H01L2924/01042 , H01L2924/014 , H01L2924/14
摘要： Disclosed is a method of manufacturing a metal mask for an integrated circuit chip interconnect solder bump. The invention deposits a very thick photoresist on both sides of a very thick molybdenum foil sheet (the molybdenum sheet is at least 8 mils thick and the photoresist is at least 5 microns thick). Then the process exposes and develops the photoresist to produce at least one opening having a diameter of at least 5 mil. The invention simultaneously etches both sides of the molybdenum foil using a very low etchant spray pressure of approximately 5 psi to form at least one via in the molybdenum foil that has a diameter of at least 12 mil and a knife-edge of 0.2 mil. The photoresist is removed after the etching process.
摘要翻译：公开了一种用于集成电路芯片互连焊料凸块的金属掩模的制造方法。本发明在非常厚的钼箔片的两侧沉积非常厚的光致抗蚀剂（钼片的厚度至少为8密耳，光刻胶的厚度至少为5微米）。然后，该工艺使光致抗蚀剂暴露并显影，以产生直径至少为5密耳的至少一个开口。本发明使用非常低的约5psi的蚀刻剂喷雾压力同时蚀刻钼箔的两面，以在钼箔中形成直径至少为12密耳，刀刃为0.2密耳的至少一个通孔。在蚀刻工艺之后去除光致抗蚀剂。

4. 发明授权

US07138326B2 Wafer integrated rigid support ring 有权
公开(公告)号：US07138326B2
公开(公告)日：2006-11-21
申请号：US10625635
申请日：2003-07-23
申请人： Harry D. Cox , David P. Daniel , Leonard J. Gardecki , Albert J. Gregoritsch, III , Ruth A. Machell Julianelle , Charles H. Keeler , Doris P. Pulaski , Mary A. Schaffer , David L. Smith , David J. Specht , Adolf E. Wirsing
发明人： Harry D. Cox , David P. Daniel , Leonard J. Gardecki , Albert J. Gregoritsch, III , Ruth A. Machell Julianelle , Charles H. Keeler , Doris P. Pulaski , Mary A. Schaffer , David L. Smith , David J. Specht , Adolf E. Wirsing
IPC分类号： H01L21/44
CPC分类号： H01L23/528 , H01L23/544 , H01L24/10 , H01L24/11 , H01L24/13 , H01L2223/54406 , H01L2223/54493 , H01L2224/05001 , H01L2224/05022 , H01L2224/05111 , H01L2224/05124 , H01L2224/05147 , H01L2224/05171 , H01L2224/05568 , H01L2224/05572 , H01L2224/05573 , H01L2224/05644 , H01L2224/05647 , H01L2224/13 , H01L2224/13099 , H01L2224/131 , H01L2224/13611 , H01L2924/0001 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/0102 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01057 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/01327 , H01L2924/014 , H01L2924/15787 , H01L2924/00014 , H01L2924/00
摘要： A shadow mask for depositing solder bumps includes additional dummy holes located adjacent holes corresponding to most of the perimeter chips of the wafer. The additional dummy provide more uniform plasma etching of contacts of the wafer, improve etching of contacts of perimeter chips, and lower contact resistance of contacts of perimeter chips. The extra holes also provide solder bumps outside the perimeter chips that can be used to support a second shadow mask for deposition of an additional material, such as tin, on the reflowed solder bumps for mounting the chips on a plastic substrate at low temperature. An improved mask to wafer alignment aid is formed from standard solder bumps. The improved alignment aid avoids damage to test probes and provides improved course alignment.

5. 发明授权

US5573875A Laser ablation mask and method of fabrication 失效
标题翻译：激光烧蚀掩模和制造方法
公开(公告)号：US5573875A
公开(公告)日：1996-11-12
申请号：US569321
申请日：1995-12-08
申请人： Leon H. Kaplan , Doris P. Pulaski
发明人： Leon H. Kaplan , Doris P. Pulaski
IPC分类号： B23K26/06 , G03F1/00 , G03F7/40 , H01L21/027 , G03F9/00
CPC分类号： G03F1/50 , Y10T428/24355
摘要： A laser ablation mask and a method of fabrication therefor. The mask has a pattern of clear areas and scattering areas. The scattering areas are covered with randomly formed facets. The facets act as scattering centers. Areas clear of facets transmit laser energy. Scattering areas refract laser energy. Laser energy directed at the mask, will pass through the clear mask areas to selectively ablate an organic layer placed opposite the mask. However, laser energy is scattered when striking and passing through the scattering areas such that insufficient laser energy passes directly through the mask to reach the organic layer for ablation to occur. The mask is formed by depositing and patterning a metal mask layer on a quartz plate. The patterned mask layer protects intended clear areas. Scattering areas are formed in unprotected plate areas by subjecting the plate to a polymethacrylic acid/bifluoride solution.
摘要翻译：一种激光烧蚀掩模及其制造方法。掩模具有清晰的区域和散射区域的图案。散射区域被随机形成的小平面覆盖。方面作为散射中心。无光面的区域传输激光能量。散射区折射激光能量。指向面罩的激光能量将通过透明掩模区域，以选择性地烧蚀与掩模相对放置的有机层。然而，当撞击并穿过散射区域时，激光能量被散射，使得激光能量不足直接通过掩模到达有机层以进行消融。通过在石英板上沉积和图案化金属掩模层来形成掩模。图案化掩模层保护预期的清晰区域。散射区域通过使该板接受聚甲基丙烯酸/二氟化物溶液而形成在未受保护的板区域中。

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