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1. 发明申请

US20050266646A1 Method of forming trench in semiconductor device 失效
标题翻译：在半导体器件中形成沟槽的方法
公开(公告)号：US20050266646A1
公开(公告)日：2005-12-01
申请号：US11080891
申请日：2005-03-16
申请人： Doo-hoon Goo , Si-hyeung Lee , Han-ku Cho , Sang-gyun Woo , Gi-sung Yeo
发明人： Doo-hoon Goo , Si-hyeung Lee , Han-ku Cho , Sang-gyun Woo , Gi-sung Yeo
IPC分类号： H01L21/76 , H01L21/00 , H01L21/308 , H01L21/8242 , H01L27/02
CPC分类号： H01L27/10876 , H01L21/3083 , H01L27/0207
摘要： There are provided a method of forming a trench for a recessed channel of a transistor and a layout for the same. A layout for the recessed channel according to one aspect of the present invention is formed such that an open region is extended across at least one of a first active region in a lateral direction, and also across another second active region in parallel with the first active region in a diagonal direction, and the extension is cut not to reach an isolation region between two third active regions that are in parallel with the second active region in a diagonal direction, and have noses facing each other in a longitudinal direction, and the layout includes an alignment of a plurality of open regions, which are discontinuously aligned. An etch mask is formed using the layout, and a semiconductor substrate is etched using the etch mask, and a trench for a recessed channel is formed on the active region.
摘要翻译：提供了一种形成用于晶体管的凹槽的沟槽的方法及其布局。根据本发明的一个方面的凹陷通道的布局被形成为使得开放区域跨越横向方向上的第一有源区域中的至少一个延伸，并且还跨越与第一活性物体平行的另一个第二有源区域区域，并且延伸部被切割成不能在对角线方向上到达与第二有源区域平行的两个第三有源区域之间的隔离区域，并且在纵向方向上具有彼此面对的鼻子，并且布局包括不连续对准的多个开放区域的对准。使用布局形成蚀刻掩模，并且使用蚀刻掩模蚀刻半导体衬底，并且在有源区上形成用于凹陷沟道的沟槽。

2. 发明授权

US07259065B2 Method of forming trench in semiconductor device 失效
标题翻译：在半导体器件中形成沟槽的方法
公开(公告)号：US07259065B2
公开(公告)日：2007-08-21
申请号：US11080891
申请日：2005-03-16
申请人： Doo-hoon Goo , Si-hyeung Lee , Han-ku Cho , Sang-gyun Woo , Gi-sung Yeo
发明人： Doo-hoon Goo , Si-hyeung Lee , Han-ku Cho , Sang-gyun Woo , Gi-sung Yeo
IPC分类号： H01L21/336
CPC分类号： H01L27/10876 , H01L21/3083 , H01L27/0207
摘要： There are provided a method of forming a trench for a recessed channel of a transistor and a layout for the same. A layout for the recessed channel according to one aspect of the present invention is formed such that an open region is extended across at least one of a first active region in a lateral direction, and also across another second active region in parallel with the first active region in a diagonal direction, and the extension is cut not to reach an isolation region between two third active regions that are in parallel with the second active region in a diagonal direction, and have noses facing each other in a longitudinal direction, and the layout includes an alignment of a plurality of open regions, which are discontinuously aligned. An etch mask is formed using the layout, and a semiconductor substrate is etched using the etch mask, and a trench for a recessed channel is formed on the active region.
摘要翻译：提供了一种形成用于晶体管的凹槽的沟槽的方法及其布局。根据本发明的一个方面的凹陷通道的布局被形成为使得开放区域跨越横向方向上的第一有源区域中的至少一个延伸，并且还跨越与第一活性物体平行的另一个第二有源区域区域，并且延伸部被切割成不能在对角线方向上到达与第二有源区域平行的两个第三有源区域之间的隔离区域，并且在纵向方向上具有彼此面对的鼻子，并且布局包括不连续对准的多个开放区域的对准。使用布局形成蚀刻掩模，并且使用蚀刻掩模蚀刻半导体衬底，并且在有源区上形成用于凹陷沟道的沟槽。

3. 发明授权

US07241552B2 Resist composition comprising photosensitive polymer having lactone in its backbone 失效
标题翻译：抗蚀剂组合物包含其主链中具有内酯的光敏聚合物
公开(公告)号：US07241552B2
公开(公告)日：2007-07-10
申请号：US10909384
申请日：2004-08-03
申请人： Kwang-sub Yoon , Dong-won Jung , Si-hyeung Lee , Hyun-woo Kim , Sook Lee , Sang-gyun Woo , Sang-jun Choi
发明人： Kwang-sub Yoon , Dong-won Jung , Si-hyeung Lee , Hyun-woo Kim , Sook Lee , Sang-gyun Woo , Sang-jun Choi
IPC分类号： G03F7/004
CPC分类号： G03F7/0395 , G03F7/0392 , G03F7/0397 , Y10S430/106
摘要： A resist composition includes a photoacid generator (PAG) and a photosensitive polymer. The photosensitive polymer is polymerized with (a) at least one of the monomers having the respective formulae: where R1 and R2 are independently a hydrogen atom, alkyl, hydroxyalkyl, alkyloxy, carbonyl or ester, and x and y are independently integers from 1 to 6, and (b) at least one of a (meth)acrylate monomer, a maleic anhydride monomer, and a norbornene monomer.
摘要翻译：抗蚀剂组合物包括光致酸产生剂（PAG）和光敏聚合物。光敏聚合物与（a）至少一种具有以下各式的单体聚合：其中R 1和R 2独立地为氢原子，烷基，羟基烷基，烷氧基，羰基或酯，x和y独立地为1至 6，和（b）至少一种（甲基）丙烯酸酯单体，马来酸酐单体和降冰片烯单体。

4. 发明申请

US20050008975A1 Resist composition comprising photosensitive polymer having lactone in its backbone 失效
标题翻译：抗蚀剂组合物包含其主链中具有内酯的光敏聚合物
公开(公告)号：US20050008975A1
公开(公告)日：2005-01-13
申请号：US10909384
申请日：2004-08-03
申请人： Kwang-sub Yoon , Dong-won Jung , Si-hyeung Lee , Hyun-woo Kim , Sook Lee , Sang-gyun Woo , Sang-jun Choi
发明人： Kwang-sub Yoon , Dong-won Jung , Si-hyeung Lee , Hyun-woo Kim , Sook Lee , Sang-gyun Woo , Sang-jun Choi
IPC分类号： C08F220/18 , C08F222/06 , C08F232/04 , C08F234/02 , G03F7/004 , G03F7/039 , H01L21/027 , G03C1/76
CPC分类号： G03F7/0395 , G03F7/0392 , G03F7/0397 , Y10S430/106
摘要： A resist composition includes a photoacid generator (PAG) and a photosensitive polymer. The photosensitive polymer is polymerized with (a) at least one of the monomers having the respective formulae: where R1 and R2 are independently a hydrogen atom, alkyl, hydroxyalkyl, alkyloxy, carbonyl or ester, and x and y are independently integers from 1 to 6, and (b) at least one of a (meth)acrylate monomer, a maleic anhydride monomer, and a norbornene monomer.
摘要翻译：抗蚀剂组合物包括光致酸产生剂（PAG）和光敏聚合物。光敏聚合物与（a）至少一种具有以下各式的单体聚合：其中R 1和R 2独立地为氢原子，烷基，羟基烷基，烷氧基，羰基或酯，x和y独立地为1至 6，和（b）至少一种（甲基）丙烯酸酯单体，马来酸酐单体和降冰片烯单体。

5. 发明授权

US06596459B1 Photosensitive polymer and resist composition containing the same 失效
标题翻译：含有它们的光敏聚合物和抗蚀剂组合物
公开(公告)号：US06596459B1
公开(公告)日：2003-07-22
申请号：US09716269
申请日：2000-11-21
申请人： Hyun-woo Kim , Ki-young Kwon , Si-hyeung Lee , Dong-won Jung , Sook Lee , Kwang-sub Yoon , Sang-jun Choi , Sang-gyun Woo
发明人： Hyun-woo Kim , Ki-young Kwon , Si-hyeung Lee , Dong-won Jung , Sook Lee , Kwang-sub Yoon , Sang-jun Choi , Sang-gyun Woo
IPC分类号： G03F7004
CPC分类号： G03F7/0395 , G03F7/0397
摘要： There are provided a photosensitive polymer and a photoresist compositing containing the same. The photosensitive polymer is represented by the following formula: wherein R1 is an acid-labile tertiary alkyl ester group, R2 is hydrogen atom, methyl, ethyl, carboxyl, &ggr;-butyrolactone-2-yl ester, &ggr;-butyrolactone-3-yl ester, pantolactone-2-yl ester, mevalonic lactone ester, 3-tetrahydrofuranyl ester, 2,3-propylenecarbonate-1-yl ester, 3-methyl-&ggr;-butyrolactone-3-yl ester or C3 to C20 alicyclic hydrocarbon, a/(a+b+c) is 0.1˜0.7, b/(a+b+c) is 0.1˜0.8, c/(a+b+c) is 0.0˜0.8, and n is an integer in the range of 0 to 2.
摘要翻译：提供光敏聚合物和含有它的光致抗蚀剂复合物。光敏聚合物由下式表示：其中R1是酸不稳定的叔烷基酯基，R2是氢原子，甲基，乙基，羧基，γ-丁内酯-2-基酯，γ-丁内酯-3-基酯，泛酸内酯-2-基酯，甲羟戊酸内酯，3-四氢呋喃基酯，2,3-亚丙基碳酸酯-1-基酯，3-甲基-γ-丁内酯-3-基酯或C 3至C 20脂环族烃，a /（ a + b + c）为0.1〜0.7，b /（a + b + c）为0.1〜0.8，c /（a + b + c）为0.0〜0.8，n为0〜 2。

6. 发明授权

US07045267B2 Resist composition comprising photosensitive polymer having lactone in its backbone 有权
标题翻译：抗蚀剂组合物包含其主链中具有内酯的光敏聚合物
公开(公告)号：US07045267B2
公开(公告)日：2006-05-16
申请号：US10349917
申请日：2003-01-24
申请人： Kwang-sub Yoon , Dong-won Jung , Si-hyeung Lee , Hyun-woo Kim , Sook Lee , Sang-gyun Woo , Sang-jun Choi
发明人： Kwang-sub Yoon , Dong-won Jung , Si-hyeung Lee , Hyun-woo Kim , Sook Lee , Sang-gyun Woo , Sang-jun Choi
IPC分类号： G03F7/038 , C07D307/00
CPC分类号： G03F7/0395 , G03F7/0392 , G03F7/0397 , Y10S430/106
摘要： This invention is directed to a coating composition used for original equipment manufacturing or refinishing uses in the automotive industry, which coating composition utilizes an acrylic polymer which contains substituted or unsubstituted exomethylene lactones or lactams as a comonomer.
摘要翻译：本发明涉及用于汽车工业的原始设备制造或修补用途的涂料组合物，该涂料组合物使用含有取代或未取代的异亚丙基内酯或内酰胺作为共聚单体的丙烯酸类聚合物。

7. 发明授权

US06642336B1 Photosensitive polymer 有权
标题翻译：光敏聚合物
公开(公告)号：US06642336B1
公开(公告)日：2003-11-04
申请号：US09644101
申请日：2000-08-23
申请人： Sook Lee , Ki-young Kwon , Si-hyeung Lee , Kwang-sub Yoon , Hyun-woo Kim , Dong-won Jung , Sang-jun Choi , Sang-gyun Woo
发明人： Sook Lee , Ki-young Kwon , Si-hyeung Lee , Kwang-sub Yoon , Hyun-woo Kim , Dong-won Jung , Sang-jun Choi , Sang-gyun Woo
IPC分类号： C08F1000
CPC分类号： G03F7/039 , C08G61/08 , G03F7/0045
摘要： A photosensitive polymer which maintains transparency even when exposed to a short-wavelength light source of 193 nm or below, exhibits improved adhesiveness to a substrate, improved contrast and improved resistance to dry etching. The photosensitive polymer includes a first monomer which is alicyclic hydrocarbon carboxylate having an acid-labile C6 to C20 tertiary alicyclic hydrocarbon group as a substituent, and a second monomer which is capable of free radical polymerization.
摘要翻译：即使暴露于193nm以下的短波长光源也能够保持透明性的光敏性聚合物表现出改善的对基材的粘合性，改善的对比度和改善的耐干蚀刻性。感光性高分子包括具有酸不稳定性C6〜C20叔脂环族烃基作为取代基的脂环式羧酸酯的第一单体和能够进行自由基聚合的第二单体。

8. 发明授权

US06537727B2 Resist composition comprising photosensitive polymer having loctone in its backbone 有权
标题翻译：抗蚀剂组合物包含其主链中具有洛酮的光敏聚合物
公开(公告)号：US06537727B2
公开(公告)日：2003-03-25
申请号：US09901569
申请日：2001-07-11
申请人： Kwang-sub Yoon , Dong-won Jung , Si-hyeung Lee , Hyun-woo Kim , Sook Lee , Sang-gyun Woo , Sang-jun Choi
发明人： Kwang-sub Yoon , Dong-won Jung , Si-hyeung Lee , Hyun-woo Kim , Sook Lee , Sang-gyun Woo , Sang-jun Choi
IPC分类号： G03F7038
CPC分类号： G03F7/0395 , G03F7/0392 , G03F7/0397 , Y10S430/106
摘要： A resist composition includes a photosensitive polymer having a lactone in its backbone. The photosensitive polymer of the resist composition includes at least one of the monomers having the formulae: where R1 and R2 are independently a hydrogen atom, alkyl, hydroxyalkyl, alkyloxy, carbonyl or ester, and x, y, v and w are independently integers from 1 to 6.
摘要翻译：抗蚀剂组合物包括在其主链中具有内酯的光敏聚合物。抗蚀剂组合物的光敏聚合物包含至少一种具有下式的单体：其中R 1和R 2独立地为氢原子，烷基，羟烷基，烷氧基，羰基或酯，x，y，v和w独立地为 1〜6。

9. 发明授权

US06613492B2 Photosensitive polymer having phenyl ring and lactone group and resist composition comprising the same 失效
公开(公告)号：US06613492B2
公开(公告)日：2003-09-02
申请号：US09933042
申请日：2001-08-21
申请人： Si-hyeung Lee
发明人： Si-hyeung Lee
IPC分类号： G03C7038
CPC分类号： G03F7/0392
摘要： A photosensitive polymer having a phenyl ring and a lactone group, and a resist composition, wherein the resist composition contains a photosensitive polymer including a monomer unit having at least one group selected from the groups indicated by the following formulas, and a photoacid generator (PAG).

10. 发明授权

US06893793B2 Photosensitive polymer and chemically amplified photoresist composition containing the same 失效
标题翻译：光敏聚合物和含有其的化学放大光致抗蚀剂组合物
公开(公告)号：US06893793B2
公开(公告)日：2005-05-17
申请号：US10383770
申请日：2003-03-10
申请人： Dong-won Jung , Sang-jun Choi , Si-hyeung Lee , Sook Lee
发明人： Dong-won Jung , Sang-jun Choi , Si-hyeung Lee , Sook Lee
IPC分类号： C08F220/18 , C08F222/06 , C08F232/04 , G03F7/004 , G03F7/039 , H01L21/027
CPC分类号： G03F7/0395 , G03F7/0397 , Y10S430/106 , Y10S430/115 , Y10S430/122
摘要： The photosensitive polymer includes a first monomer which is norbornene ester having C1 to C12 aliphatic alcohol as a substituent, and a second monomer which is maleic anhydride. A chemically amplified photoresist composition, containing the photosensitive polymer, has an improved etching resistance and adhesion to underlying layer materials, and exhibits wettability to developing solutions.
摘要翻译：感光性高分子包含作为取代基具有C 1〜C 12脂肪族醇的降冰片烯的第一单体和作为马来酸酐的第二单体。含有光敏聚合物的化学放大光致抗蚀剂组合物具有改进的抗蚀刻性和对下层材料的粘附性，并且显示出对显影液的润湿性。

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