会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Method of manufacturing semiconductor devices
    • 制造半导体器件的方法
    • US08927355B2
    • 2015-01-06
    • US13304936
    • 2011-11-28
    • Doo-Young LeeKi Il KimMyeong-Cheol KimDo-Hyoung KimDo-Hsing Lee
    • Doo-Young LeeKi Il KimMyeong-Cheol KimDo-Hyoung KimDo-Hsing Lee
    • H01L21/339H01L21/768H01L29/78H01L29/66
    • H01L29/78H01L21/76829H01L21/76832H01L21/76895H01L21/76897H01L29/66545
    • A method of manufacturing a semiconductor device, including the second sacrificial layer receiving a gate structure include a metal and a spacer on a sidewall of the gate structure therethrough being formed on a substrate. The second sacrificial layer is removed. A second etch stop layer and an insulating interlayer are sequentially formed on the gate structure, the spacer and the substrate. An opening passing through the insulating interlayer is formed to expose a portion of the gate structure, a portion of the spacer and a portion of the second etch stop layer on a portion of the substrate. The second etch stop layer being exposed through the opening is removed. The contact being electrically connected to the gate structure and the substrate and filling the opening is formed. The semiconductor device having the metal gate electrode and the shared contact has a desired leakage current characteristic and resistivity characteristics.
    • 包括接收栅极结构的第二牺牲层的半导体器件的制造方法包括在基板上形成的栅极结构的侧壁上的金属和间隔物。 去除第二牺牲层。 在栅极结构,间隔物和衬底上依次形成第二蚀刻停止层和绝缘中间层。 形成通过绝缘中间层的开口以暴露栅极结构的一部分,间隔物的一部分和第二蚀刻停止层的一部分在衬底的一部分上。 去除通过开口露出的第二蚀刻停止层。 形成与栅极结构和基板电连接并填充开口的触点。 具有金属栅电极和共用触点的半导体器件具有期望的漏电流特性和电阻率特性。
    • 2. 发明申请
    • METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES
    • 制造半导体器件的方法
    • US20120135577A1
    • 2012-05-31
    • US13304936
    • 2011-11-28
    • Doo-Young LEEKi Il KimMyeong-Cheol KimDo-Hyoung KimDo-Hsing Lee
    • Doo-Young LEEKi Il KimMyeong-Cheol KimDo-Hyoung KimDo-Hsing Lee
    • H01L21/336H01L21/28
    • H01L29/78H01L21/76829H01L21/76832H01L21/76895H01L21/76897H01L29/66545
    • A method of manufacturing a semiconductor device, including the second sacrificial layer receiving a gate structure include a metal and a spacer on a sidewall of the gate structure therethrough being formed on a substrate. The second sacrificial layer is removed. A second etch stop layer and an insulating interlayer are sequentially formed on the gate structure, the spacer and the substrate. An opening passing through the insulating interlayer is formed to expose a portion of the gate structure, a portion of the spacer and a portion of the second etch stop layer on a portion of the substrate. The second etch stop layer being exposed through the opening is removed. The contact being electrically connected to the gate structure and the substrate and filling the opening is formed. The semiconductor device having the metal gate electrode and the shared contact has a desired leakage current characteristic and resistivity characteristics.
    • 包括接收栅极结构的第二牺牲层的半导体器件的制造方法包括在基板上形成的栅极结构的侧壁上的金属和间隔物。 去除第二牺牲层。 在栅极结构,间隔物和衬底上依次形成第二蚀刻停止层和绝缘中间层。 形成通过绝缘中间层的开口以暴露栅极结构的一部分,间隔物的一部分和第二蚀刻停止层的一部分在衬底的一部分上。 去除通过开口露出的第二蚀刻停止层。 形成与栅极结构和基板电连接并填充开口的触点。 具有金属栅电极和共用触点的半导体器件具有期望的漏电流特性和电阻率特性。
    • 4. 发明授权
    • Rotating reference codebook that is used in a multiple-input multiple-output (MIMO) communication system
    • 在多输入多输出(MIMO)通信系统中使用的旋转参考码本
    • US08488708B2
    • 2013-07-16
    • US12819428
    • 2010-06-21
    • Junil ChoiBruno ClerckxKi Il Kim
    • Junil ChoiBruno ClerckxKi Il Kim
    • H04L1/02
    • H04B7/0417
    • A rotating reference codebook used in a multiple input multiple output (MIMO) communication system is provided. The reference codebook includes codewords from a discrete Fourier transform (DFT) codebook. A base station and a terminal may calculate a rotation matrix based on a previous preferred codeword and a random codeword among codewords included in the DFT codebook. A reference codebook may be rotated using the rotation matrix and may be transformed to a new codebook. The reference codebook may include codewords of a polar cap codebook and the codewords of the DFT codebook. Even though the codewords of the DFT codebook are rotated, the codewords of the DFT codebook may remain in the new codebook as elements of the DFT codebook.
    • 提供了一种在多输入多输出(MIMO)通信系统中使用的旋转参考码本。 参考码本包括来自离散傅里叶变换(DFT)码本的码字。 基站和终端可以基于DFT码本中包括的码字中的先前优选码字和随机码字来计算旋转矩阵。 参考码本可以使用旋转矩阵旋转,并且可以被转换为新的码本。 参考码本可以包括极性码本码字的码字和DFT码本的码字。 即使旋转DFT码本的码字,DFT码本的码字也可以作为DFT码本的元素而保留在新码本中。
    • 9. 发明授权
    • Graphene power-mill system
    • 石墨烯动力磨系统
    • US08269401B1
    • 2012-09-18
    • US13305641
    • 2011-11-28
    • Ki Il KimSang Woo KimYoung Kim
    • Ki Il KimSang Woo KimYoung Kim
    • H01L41/113
    • H02N2/18H01L41/113H01L41/193
    • A graphene power-mill system is provided, including a graphene sheet configured for generating electrical charges on both sides, a graphene sheet holder configured for engaging and holding the graphene sheet on a first side, a groove provided on the first side of the graphene sheet holder, and a graphene pusher or bender configured for pushing and releasing a portion of the graphene sheet into the groove. the graphene pusher or bender has a shape fitting the groove, and the graphene sheet recovers to be flat after removing the graphene pusher or bender from the groove. The graphene sheet can comprise graphene layers and one or more polyvinylidene fluoride (PVDF) layers stacked alternatingly. Both sides of the stacked graphene layers can be connected in parallel electrically.
    • 提供了一种石墨烯动力磨系统,其包括被构造用于在两侧产生电荷的石墨烯片,石墨烯片保持器,其构造成用于在第一侧上接合并保持石墨烯片,设置在石墨烯片的第一侧上的槽 并且石墨烯推动器或弯曲器被配置为将一部分石墨烯片材推入和释放到凹槽中。 石墨烯推动器或弯曲机具有嵌合槽的形状,并且在从槽中去除石墨烯推动器或弯曲器之后,石墨烯片恢复成平坦的。 石墨烯片可以包括石墨烯层和一个或多个交替堆叠的聚偏二氟乙烯(PVDF)层。 堆叠的石墨烯层的两侧可以并联连接。