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1. 发明申请

US20090023946A1 SYNTHETIC METHOD OF GLYCOL DIESTERS FROM REACTION OF GLYCOL MONOESTERS AND LINEAR ALIPHATIC CARBOXYLIC ACIDS 有权
标题翻译：甘油单体和线性二羧酸反应的甘油二酯的合成方法
公开(公告)号：US20090023946A1
公开(公告)日：2009-01-22
申请号：US12241521
申请日：2008-09-30
申请人： Donghyun KO , Kwang Ho PARK , Sang Gi LEE , Jijoong MOON , Sungshik Eom , Dae Sun Rew
发明人： Donghyun KO , Kwang Ho PARK , Sang Gi LEE , Jijoong MOON , Sungshik Eom , Dae Sun Rew
IPC分类号： C07C69/34
CPC分类号： C07C67/08 , Y02P20/127 , C07C69/003 , C07C69/28
摘要： A method of synthesizing glycol diester by reacting a linear aliphatic carboxylic acid and a glycol monoester in the presence of a Lewis acid type catalyst is provided. In the method, after introducing the glycol monoester, the linear aliphatic carboxylic acid and the Lewis acid type catalyst into a reactor, the reaction occurs to produce reaction products and water in the reactor; an excess of the linear aliphatic carboxylic acid forms an azeotrope with water during the reaction to be sent to a condenser through a distillation column; the linear aliphatic carboxylic acid and water passed through the condenser are divided into an organic layer and an aqueous layer in an oil water separator; and the organic layer is returned to the distillation column through a material cycling line and water in the aqueous layer is removed through a water removal line. By utilizing reactive distillation technique, water produced during the reaction is rapidly removed, and thus the reaction time can be significantly reduced and the yield of the glycol diester can be maximized.
摘要翻译：提供了在路易斯酸型催化剂存在下使直链脂族羧酸和二醇单酯反应合成二醇二酯的方法。在该方法中，在将二醇单酯，直链脂肪族羧酸和路易斯酸型催化剂引入反应器中之后，发生反应以在反应器中产生反应产物和水; 过量的直链脂族羧酸在反应期间与水形成共沸物，通过蒸馏塔送至冷凝器; 将通过冷凝器的直链脂肪族羧酸和水分为油水分离器中的有机层和水层; 并且有机层通过材料循环管线返回到蒸馏塔，水层中的水通过除水管线除去。通过利用反应蒸馏技术，快速除去反应期间产生的水，从而可以显着降低反应时间，并使乙二醇二酯的产率最大化。

2. 发明申请

US20080283887A1 CMOS Image Sensor 审中-公开
标题翻译： CMOS图像传感器
公开(公告)号：US20080283887A1
公开(公告)日：2008-11-20
申请号：US12174618
申请日：2008-07-16
申请人： Sang Gi LEE
发明人： Sang Gi LEE
IPC分类号： H01L27/146
CPC分类号： H01L27/14685 , H01L27/14627
摘要： A method of fabricating a CMOS image sensor is disclosed, by which image sensor characteristics are enhanced. In one aspect, the method includes forming a plurality of photodiodes in the photodiode region of a semiconductor substrate; stacking a first insulating layer over the semiconductor substrate including the photodiodes; forming a metal pad on the insulating layer in the pad region of the substrate; forming a second insulating layer over the semiconductor substrate including the metal pad; selectively etching exposed portions of the second insulating layer, using a mask, to form simultaneously a pad opening in the pad region and a trench in the photodiode region; selectively etching portions of the second insulating layer and the first insulating layer under the trench; and forming a slope on lateral sides of at least the second insulating layer.
摘要翻译：公开了一种制造CMOS图像传感器的方法，通过该方法提高了图像传感器特性。一方面，该方法包括在半导体衬底的光电二极管区域中形成多个光电二极管; 在包括光电二极管的半导体衬底之上堆叠第一绝缘层; 在衬底的焊盘区域中的绝缘层上形成金属焊盘; 在包括金属焊盘的半导体衬底上形成第二绝缘层; 使用掩模选择性地蚀刻第二绝缘层的暴露部分，同时形成焊盘区域中的焊盘开口和光电二极管区域中的沟槽; 选择性地蚀刻沟槽下方的第二绝缘层和第一绝缘层的部分; 以及在至少所述第二绝缘层的横向侧上形成斜面。

3. 发明申请

US20080303073A1 CMOS Image Sensor 有权
标题翻译： CMOS图像传感器
公开(公告)号：US20080303073A1
公开(公告)日：2008-12-11
申请号：US12190576
申请日：2008-08-12
申请人： Sang Gi LEE
发明人： Sang Gi LEE
IPC分类号： H01L31/00
CPC分类号： H01L27/14685 , H01L27/14627
摘要： Provided are a CMOS image sensor in which microlenses are formed in a remaining space in a patterned light shielding layer to improve image sensor characteristics and to protect the microlenses during packaging. The CMOS image sensor may include: a semiconductor substrate; at least one photodiode on or in the semiconductor substrate; a first insulating layer on the substrate including the photodiode(s); a plurality of metal lines on and/or in the first insulating layer; a second insulating layer on the first insulating layer including at least some of the metal lines; a patterned light shielding layer on the second insulating layer; and microlenses in a remaining space on the second insulating layer.
摘要翻译：提供了一种CMOS图像传感器，其中微透镜形成在图案化遮光层的剩余空间中，以改善图像传感器特性并在包装期间保护微透镜。 CMOS图像传感器可以包括：半导体衬底; 在半导体衬底上或半导体衬底中的至少一个光电二极管; 在包括所述光电二极管的所述衬底上的第一绝缘层; 在第一绝缘层上和/或第一绝缘层中的多个金属线; 所述第一绝缘层上的第二绝缘层包括至少一些所述金属线; 在第二绝缘层上的图案化遮光层; 和在第二绝缘层上的剩余空间中的微透镜。

4. 发明申请

US20080157144A1 CMOS IMAGE SENSOR AND FABRICATING METHOD THEREOF 失效
标题翻译： CMOS图像传感器及其制作方法
公开(公告)号：US20080157144A1
公开(公告)日：2008-07-03
申请号：US11948786
申请日：2007-11-30
申请人： Sang Gi LEE
发明人： Sang Gi LEE
IPC分类号： H01L31/113 , H01L21/00
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/14687
摘要： A method of fabricating a CMOS image sensor comprising forming an epitaxial layer on a semiconductor substrate, the epitaxial layer comprising a pixel and logic area, forming an STI layer in an insulating layer on the epitaxial layer, forming a plurality of wells and a gate pattern having a spacer on the insulating layer, forming a plurality of source and drain regions in the insulating layer using ion implantation, forming a salicide blocking layer on the insulating layer and gate pattern in the pixel area, forming a plurality of silicide layers in the logic area by performing a silicidation process, sequentially forming a PMD liner nitride layer and a PSG (phosphosilicate glass) layer on the salicide blocking layer in the pixel area and the insulating layer and gate pattern in the logic area, and forming a plurality of contacts connecting the PSG layer to the source and drain regions.
摘要翻译：一种制造CMOS图像传感器的方法，包括在半导体衬底上形成外延层，所述外延层包括像素和逻辑区域，在外延层上的绝缘层中形成STI层，形成多个阱和栅极图案在所述绝缘层上具有间隔物，使用离子注入在所述绝缘层中形成多个源极和漏极区域，在所述绝缘层上形成所述绝缘层上的自对准硅化物阻挡层，在所述像素区域中形成栅极图案，在所述逻辑层中形成多个硅化物层通过进行硅化处理，顺序地在像素区域中的自对准硅化物阻挡层上形成PMD衬垫氮化物层和PSG（磷硅玻璃）层，并且在逻辑区域中形成绝缘层和栅极图案，并形成多个触点， PSG层到源极和漏极区。

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