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1. 发明申请

US20100103740A1 Nonvolatile Memory Device, Methods of Programming the Nonvolatile Memory Device and Memory System Including the Same 失效
标题翻译：非易失性存储器件，非易失性存储器件的编程方法和包括其的存储器系统
公开(公告)号：US20100103740A1
公开(公告)日：2010-04-29
申请号：US12551268
申请日：2009-09-01
申请人： Donghun Kwak , Youngho Lim
发明人： Donghun Kwak , Youngho Lim
IPC分类号： G11C16/04 , G11C8/00 , G11C16/06
CPC分类号： G11C16/10 , G11C11/5628 , G11C16/0483 , G11C16/3427 , G11C2211/5621
摘要： A nonvolatile memory device is provided. A counter counts an amount of data to be program-inhibited among data to be written to memory cells to provide a first count value. The counter also counts an amount of program-inhibited data among data written to the memory cells to provide a second count value. Control logic controls a program operation by comparing the first count value with the second count value.
摘要翻译：提供非易失性存储器件。计数器对待写入存储器单元的数据中要编程禁止的数据量进行计数以提供第一计数值。计数器还对写入存储器单元的数据中的程序禁止数据量进行计数以提供第二计数值。控制逻辑通过将第一计数值与第二计数值进行比较来控制程序操作。

2. 发明授权

US08059464B2 Nonvolatile memory device, methods of programming the nonvolatile memory device and memory system including the same 失效
标题翻译：非易失性存储器件，非易失性存储器件的编程方法和包括其的存储器系统
公开(公告)号：US08059464B2
公开(公告)日：2011-11-15
申请号：US12551268
申请日：2009-09-01
申请人： Donghun Kwak , Youngho Lim
发明人： Donghun Kwak , Youngho Lim
IPC分类号： G11C16/04
CPC分类号： G11C16/10 , G11C11/5628 , G11C16/0483 , G11C16/3427 , G11C2211/5621
摘要： A nonvolatile memory device is provided. A counter counts an amount of data to be program-inhibited among data to be written to memory cells to provide a first count value. The counter also counts an amount of program-inhibited data among data written to the memory cells to provide a second count value. Control logic controls a program operation by comparing the first count value with the second count value.
摘要翻译：提供非易失性存储器件。计数器对待写入存储器单元的数据中要编程禁止的数据量进行计数以提供第一计数值。计数器还对写入存储器单元的数据中的程序禁止数据量进行计数以提供第二计数值。控制逻辑通过将第一计数值与第二计数值进行比较来控制程序操作。

3. 发明授权

US09378831B2 Nonvolatile memory devices, operating methods thereof and memory systems including the same 有权
标题翻译：非易失性存储器件，其操作方法和包括其的存储器系统
公开(公告)号：US09378831B2
公开(公告)日：2016-06-28
申请号：US14820895
申请日：2015-08-07
申请人： Jinman Han , Sun-Il Shim , Donghyuk Chae , Jae-Hoon Jang , Youngho Lim , Hansoo Kim , Jaehun Jeong
发明人： Jinman Han , Sun-Il Shim , Donghyuk Chae , Jae-Hoon Jang , Youngho Lim , Hansoo Kim , Jaehun Jeong
IPC分类号： G11C16/04 , G11C16/14 , G11C16/16 , G11C16/08 , G11C16/12 , G11C16/26 , G11C16/34 , H01L27/115
CPC分类号： G11C16/14 , G11C16/0466 , G11C16/0475 , G11C16/0483 , G11C16/08 , G11C16/12 , G11C16/16 , G11C16/26 , G11C16/3418 , H01L27/1157 , H01L27/11582
摘要： Nonvolatile memory device, operating methods thereof, and memory systems including the same. In the operating method, a ground select line of a first string connected to a bit line may be floated. An erase prohibition voltage may be applied to a ground select line of a second string connected to the bit line. An erase operation voltage may be applied to the first and second strings.
摘要翻译：非易失性存储器件，其操作方法和包括该非易失性存储器件的存储器系统。在操作方法中，连接到位线的第一串的接地选择线可以浮置。可以将擦除禁止电压施加到连接到位线的第二串的接地选择线。可以将擦除操作电压施加到第一和第二串。

4. 发明授权

US09390803B2 Non-volatile memory devices, operating methods thereof and memory systems including the same 有权
公开(公告)号：US09390803B2
公开(公告)日：2016-07-12
申请号：US14849029
申请日：2015-09-09
申请人： Sun-il Shim , Jae-Hoon Jang , Donghyuk Chae , Youngho Lim , Hansoo Kim , Jaehun Jeong
发明人： Sun-il Shim , Jae-Hoon Jang , Donghyuk Chae , Youngho Lim , Hansoo Kim , Jaehun Jeong
IPC分类号： G11C16/10 , G11C16/12 , G11C16/04 , G11C16/34 , G11C16/08 , G11C16/14 , G11C16/26 , H01L27/115
CPC分类号： G11C16/3459 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/12 , G11C16/14 , G11C16/26 , G11C16/3418 , H01L27/1157 , H01L27/11582
摘要： Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

5. 发明申请

US20110199833A1 NON-VOLATILE MEMORY DEVICES, OPERATING METHODS THEREOF AND MEMORY SYSTEMS INCLUDING THE SAME 有权
标题翻译：非易失性存储器件，其操作方法和包括其的存储器系统
公开(公告)号：US20110199833A1
公开(公告)日：2011-08-18
申请号：US12986798
申请日：2011-01-07
申请人： Sunil Shim , Jaehoon Jang , Donghyuk Chae , Youngho Lim , Hansoo Kim , Jaehun Jeong
发明人： Sunil Shim , Jaehoon Jang , Donghyuk Chae , Youngho Lim , Hansoo Kim , Jaehun Jeong
IPC分类号： G11C16/08 , G11C16/04
CPC分类号： G11C16/3459 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/12 , G11C16/14 , G11C16/26 , G11C16/3418 , H01L27/1157 , H01L27/11582
摘要： Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.
摘要翻译：非易失性存储器件，其操作方法和包括其的存储器系统。非易失性存储器件可以包括存储单元阵列和字线驱动器。存储单元阵列可以包括多个存储单元。字线驱动器可以被配置为分别将字线电压施加到连接到多个存储器单元的多个字线。字线电压的大小可以根据多个字线的位置来确定。

6. 发明授权

US10199116B2 Non-volatile memory devices, operating methods thereof and memory systems including the same 有权
公开(公告)号：US10199116B2
公开(公告)日：2019-02-05
申请号：US15664303
申请日：2017-07-31
申请人： Sun-Il Shim , Jae-Hoon Jang , Donghyuk Chae , Youngho Lim , Hansoo Kim , Jaehun Jeong
发明人： Sun-Il Shim , Jae-Hoon Jang , Donghyuk Chae , Youngho Lim , Hansoo Kim , Jaehun Jeong
IPC分类号： G11C16/10 , G11C16/34 , G11C16/04 , H01L27/11582 , G11C16/08 , G11C16/12 , G11C16/14 , G11C16/26 , H01L27/1157
摘要： Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

7. 发明授权

US08248852B2 Nonvolatile memory devices operable using negative bias voltages and related methods of operation 有权
标题翻译：可使用负偏置电压工作的非易失性存储器件和相关操作方法
公开(公告)号：US08248852B2
公开(公告)日：2012-08-21
申请号：US12820628
申请日：2010-06-22
申请人： Moosung Kim , Youngho Lim
发明人： Moosung Kim , Youngho Lim
IPC分类号： G11C11/34
CPC分类号： G11C16/10 , G11C16/34
摘要： A nonvolatile memory device includes a first address decoder and a second address decoder. The first address decoder includes a plurality of transistors disposed in a first well, and the second address decoder includes a plurality of transistors disposed in a second well that is electrically isolated from the first well. The first and second address decoders are associated with first and second memory blocks, respectively. A switch circuit is configured to provide a negative voltage to one of the first address decoder and the second address decoder on the basis of block address information that specifies an address included in one of the first memory block and the second memory block. Related methods of operation are also discussed.
摘要翻译：非易失性存储器件包括第一地址解码器和第二地址解码器。第一地址解码器包括设置在第一阱中的多个晶体管，并且第二地址译码器包括设置在与第一阱电绝缘的第二阱中的多个晶体管。第一和第二地址解码器分别与第一和第二存储器块相关联。开关电路被配置为基于指定包括在第一存储器块和第二存储器块之一中的地址的块地址信息来向第一地址译码器和第二地址译码器之一提供负电压。还讨论了相关的操作方法。

8. 发明申请

US20110096602A1 NONVOLATILE MEMORY DEVICES OPERABLE USING NEGATIVE BIAS VOLTAGES AND RELATED METHODS OF OPERATION 有权
标题翻译：使用负偏差电压运行的非易失性存储器件及相关操作方法
公开(公告)号：US20110096602A1
公开(公告)日：2011-04-28
申请号：US12820628
申请日：2010-06-22
申请人： Moosung Kim , Youngho Lim
发明人： Moosung Kim , Youngho Lim
IPC分类号： G11C16/04 , G11C16/06
CPC分类号： G11C16/10 , G11C16/34
摘要： A nonvolatile memory device includes a first address decoder and a second address decoder. The first address decoder includes a plurality of transistors disposed in a first well, and the second address decoder includes a plurality of transistors disposed in a second well that is electrically isolated from the first well. The first and second address decoders are associated with first and second memory blocks, respectively. A switch circuit is configured to provide a negative voltage to one of the first address decoder and the second address decoder on the basis of block address information that specifies an address included in one of the first memory block and the second memory block. Related methods of operation are also discussed.
摘要翻译：非易失性存储器件包括第一地址解码器和第二地址解码器。第一地址解码器包括设置在第一阱中的多个晶体管，并且第二地址译码器包括设置在与第一阱电绝缘的第二阱中的多个晶体管。第一和第二地址解码器分别与第一和第二存储器块相关联。开关电路被配置为基于指定包括在第一存储器块和第二存储器块之一中的地址的块地址信息来向第一地址译码器和第二地址译码器之一提供负电压。还讨论了相关的操作方法。

9. 发明授权

US09747995B2 Nonvolatile memory devices, operating methods thereof and memory systems including the same 有权
公开(公告)号：US09747995B2
公开(公告)日：2017-08-29
申请号：US15176269
申请日：2016-06-08
申请人： Sun-Il Shim , Jae-Hoon Jang , Donghyuk Chae , Youngho Lim , Hansoo Kim , Jaehun Jeong
发明人： Sun-Il Shim , Jae-Hoon Jang , Donghyuk Chae , Youngho Lim , Hansoo Kim , Jaehun Jeong
IPC分类号： G11C16/10 , G11C16/34 , G11C16/04 , H01L27/11582 , G11C16/08 , G11C16/12 , G11C16/14 , G11C16/26 , H01L27/1157
CPC分类号： G11C16/3459 , G11C16/0483 , G11C16/08 , G11C16/10 , G11C16/12 , G11C16/14 , G11C16/26 , G11C16/3418 , H01L27/1157 , H01L27/11582
摘要： Nonvolatile memory devices, operating methods thereof, and memory systems including the same. A nonvolatile memory device may include a memory cell array and a word line driver. The memory cell array may include a plurality of memory cells. The word line driver may be configured to apply word line voltages to a plurality of word lines connected to the plurality of memory cells, respectively. Magnitudes of the word line voltages may be determined according to locations of the plurality of word lines.

10. 发明授权

US09442743B2 Mobile terminal 有权
标题翻译：移动终端
公开(公告)号：US09442743B2
公开(公告)日：2016-09-13
申请号：US13408396
申请日：2012-02-29
申请人： Seho Kim , Youngho Lim , Kwangil Ji
发明人： Seho Kim , Youngho Lim , Kwangil Ji
IPC分类号： G09G5/00 , G06F9/44 , G06F1/16 , G06F3/0488
CPC分类号： G06F9/4443 , G06F1/1616 , G06F1/1647 , G06F3/04883 , G06F9/451 , G06F2200/1614
摘要： A mobile terminal including a storage unit in which a first operating system (OS) and a second OS are loaded; a first display allocated to the loaded first OS and a second display allocated to the loaded second OS; and a controller configured to receive an indication signal indicating a second OS related event has occurred on the mobile terminal, and to selectively execute a second operation corresponding to the second OS related event using the first OS and allocate at least a portion of the first display to an output of the executing second operation.
摘要翻译：一种移动终端，包括其中装载有第一操作系统（OS）和第二OS的存储单元; 分配给所加载的第一OS的第一显示器和分配给所加载的第二OS的第二显示器; 以及控制器，被配置为接收在所述移动终端上发生指示第二OS相关事件的指示信号，并且使用所述第一OS选择性地执行与所述第二OS相关事件相对应的第二操作，并且分配所述第一显示器的至少一部分到执行的第二操作的输出。

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