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1. 发明申请

US20110119644A1 METHODS OF ARRANGING MASK PATTERNS AND ASSOCIATED APPARATUS 有权
标题翻译：安装掩模和相关设备的方法
公开(公告)号：US20110119644A1
公开(公告)日：2011-05-19
申请号：US12968178
申请日：2010-12-14
申请人： Dong-woon Park , Woo-sung Han , Seong-woon Choi , Jeong-ho Yeo
发明人： Dong-woon Park , Woo-sung Han , Seong-woon Choi , Jeong-ho Yeo
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： Methods and apparatus are disclosed that arrange mask patterns in response to the contribution of a second pattern to image intensity. In some methods of arranging mask patterns, a distribution of functions h(ξ−x) is obtained which represents the contribution of a second pattern to image intensity on a first pattern. Neighboring regions of the first pattern are discretized into finite regions, and the distribution of the functions h(ξ−x) is replaced with representative values h(x,ξ) of the discretized regions. A position of the second pattern is determined using polygonal regions having the same h(x,ξ). As described, the term x is the position of the first pattern and the term ξ is the position of the assist.
摘要翻译：公开了响应于第二图案对图像强度的贡献来布置掩模图案的方法和装置。在布置掩模图案的一些方法中，获得函数h（＆xgr; -x）的分布，其表示第二图案对第一图案上的图像强度的贡献。将第一模式的相邻区域离散为有限区域，并且用离散化区域的代表值h（x，xgr）替换函数h（＆xgr; -x）的分布。使用具有相同h（x，xgr））的多边形区域来确定第二图案的位置。如上所述，术语x是第一模式的位置和术语＆xgr; 是协助的位置。

2. 发明授权

US08341561B2 Methods of arranging mask patterns and associated apparatus 有权
标题翻译：布置掩模图案和相关设备的方法
公开(公告)号：US08341561B2
公开(公告)日：2012-12-25
申请号：US12968178
申请日：2010-12-14
申请人： Dong-woon Park , Woo-sung Han , Seong-woon Choi , Jeong-ho Yeo
发明人： Dong-woon Park , Woo-sung Han , Seong-woon Choi , Jeong-ho Yeo
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： Methods and apparatus are disclosed that arrange mask patterns in response to the contribution of a second pattern to image intensity. In some methods of arranging mask patterns, a distribution of functions h(ξ−x) is obtained which represents the contribution of a second pattern to image intensity on a first pattern. Neighboring regions of the first pattern are discretized into finite regions, and the distribution of the functions h(ξ−x) is replaced with representative values h(x,ξ) of the discretized regions. A position of the second pattern is determined using polygonal regions having the same h(x,ξ). As described, the term x is the position of the first pattern and the term ξ is the position of the assist.
摘要翻译：公开了响应于第二图案对图像强度的贡献来布置掩模图案的方法和装置。在布置掩模图案的一些方法中，获得函数h（＆xgr; -x）的分布，其表示第二图案对第一图案上的图像强度的贡献。将第一模式的相邻区域离散为有限区域，并且用离散化区域的代表值h（x，xgr）替换函数h（＆xgr; -x）的分布。使用具有相同h（x，xgr））的多边形区域来确定第二图案的位置。如上所述，术语x是第一模式的位置和术语＆xgr; 是协助的位置。

3. 发明申请

US20100149502A1 Method of detecting reticle errors 有权
标题翻译：检测掩模误差的方法
公开(公告)号：US20100149502A1
公开(公告)日：2010-06-17
申请号：US12458503
申请日：2009-07-14
申请人： Jin-seok Heo , Jin-hong Park , Dae-youp Lee , Jeong-ho Yeo
发明人： Jin-seok Heo , Jin-hong Park , Dae-youp Lee , Jeong-ho Yeo
IPC分类号： G03B27/42
CPC分类号： G03B27/42
摘要： A method of detecting reticle error may include using an optical source of an exposure unit to cause light to be incident on a reticle installed in the exposure unit, and detecting the reticle error using only 0th diffraction light from among diffraction lights transmitted through the reticle. A method of detecting reticle error may include: installing a reticle, including a mask substrate and mask patterns having a critical dimension formed on the mask substrate, in an exposure unit to cause light to be incident on the reticle; exposing a photoresist film disposed on a wafer in the exposure unit using only 0th diffraction light from among diffraction lights transmitted through the reticle; developing the exposed photoresist film; and analyzing a thickness change, an image, or the thickness change and image of the developed photoresist film, in order to detect the reticle error at a wafer level.
摘要翻译：检测标线错误的方法可以包括使用曝光单元的光源使光入射到安装在曝光单元中的掩模版上，并且仅使用通过掩模版传播的衍射光中的第0衍射光来检测标线误差。检测标线错误的方法可以包括：在曝光单元中安装包括掩模基板的掩模版和具有形成在掩模基板上的临界尺寸的掩模图案，以使光入射到掩模版上; 使用透射通过掩模版的衍射光中的第0衍射光曝光设置在曝光单元中的晶片上的光致抗蚀剂膜; 显影曝光的光致抗蚀剂膜; 并分析显影的光刻胶膜的厚度变化，图像或厚度变化和图像，以便检测晶片级的标线误差。

4. 发明授权

US08384876B2 Method of detecting reticle errors 有权
标题翻译：检测掩模误差的方法
公开(公告)号：US08384876B2
公开(公告)日：2013-02-26
申请号：US12458503
申请日：2009-07-14
申请人： Jin-seok Heo , Jin-hong Park , Dae-youp Lee , Jeong-ho Yeo
发明人： Jin-seok Heo , Jin-hong Park , Dae-youp Lee , Jeong-ho Yeo
IPC分类号： G03B27/68
CPC分类号： G03B27/42
摘要： A method of detecting reticle error may include using an optical source of an exposure unit to cause light to be incident on a reticle installed in the exposure unit, and detecting the reticle error using only 0th diffraction light from among diffraction lights transmitted through the reticle. A method of detecting reticle error may include: installing a reticle, including a mask substrate and mask patterns having a critical dimension formed on the mask substrate, in an exposure unit to cause light to be incident on the reticle; exposing a photoresist film disposed on a wafer in the exposure unit using only 0th diffraction light from among diffraction lights transmitted through the reticle; developing the exposed photoresist film; and analyzing a thickness change, an image, or the thickness change and image of the developed photoresist film, in order to detect the reticle error at a wafer level.
摘要翻译：检测标线错误的方法可以包括使用曝光单元的光源使光入射到安装在曝光单元中的掩模版上，并且仅使用通过掩模版传播的衍射光中的第0衍射光来检测标线误差。检测标线错误的方法可以包括：在曝光单元中安装包括掩模基板的掩模版和具有形成在掩模基板上的临界尺寸的掩模图案，以使光入射到掩模版上; 使用透射通过掩模版的衍射光中的第0衍射光曝光设置在曝光单元中的晶片上的光致抗蚀剂膜; 显影曝光的光致抗蚀剂膜; 并分析显影的光刻胶膜的厚度变化，图像或厚度变化和图像，以便检测晶片级的标线误差。

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