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    • 4. 发明申请
    • SEMICONDUCTOR INTEGRATED CIRCUIT
    • 半导体集成电路
    • US20130328621A1
    • 2013-12-12
    • US13492127
    • 2012-06-08
    • Dong-Kyun KIM
    • Dong-Kyun KIM
    • G05F3/02
    • G05F3/245
    • A semiconductor integrated circuit is provided. First and second voltage generation units generate a first voltage and a second voltage with respect to a temperature rise, respectively. First and second current generation units generate a first current and a second current having a negative characteristic with respect to a temperature rise in response to a voltage comparison signal, respectively. A voltage comparison unit compares a voltage level of a first current transfer node with a voltage level of a second current transfer node and generates the voltage comparison signal according to the comparison result. A reference voltage output unit is connected in series to the second voltage generation unit and outputs a reference voltage maintaining a set level, without regard to a temperature variation, in proportion to a third current generated in response to the voltage comparison signal.
    • 提供半导体集成电路。 第一和第二电压产生单元分别产生相对于升温的第一电压和第二电压。 第一和第二电流产生单元分别响应于电压比较信号产生相对于温升的负特性的第一电流和第二电流。 电压比较单元将第一电流传输节点的电压电平与第二电流传输节点的电压电平进行比较,并根据比较结果产生电压比较信号。 参考电压输出单元与第二电压产生单元串联连接,并且与根据电压比较信号产生的第三电流成比例地输出维持设定电平的参考电压,而不考虑温度变化。
    • 6. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20130321067A1
    • 2013-12-05
    • US13486770
    • 2012-06-01
    • Dong-Kyun KIM
    • Dong-Kyun KIM
    • G05F1/10
    • G11C5/143G11C11/4074
    • A semiconductor device includes: a first reference voltage generation unit configured to generate a first reference voltage having a negative property in correspondence to an increase of the temperature; a second reference voltage generation unit configured to generate a second reference voltage having a positive property in correspondence to an increase of the temperature; a voltage level detection unit configured to select any one of the first and second reference voltages according to a voltage selection signal, and detect a level of an internal voltage based on a level of the selected voltage; and an internal voltage generation unit configured to generate the internal voltage in response to an output signal of the voltage level detection unit.
    • 半导体器件包括:第一参考电压产生单元,被配置为产生对应于温度升高具有负性质的第一参考电压; 第二参考电压产生单元,被配置为产生对应于温度升高具有正性质的第二参考电压; 电压电平检测单元,被配置为根据电压选择信号选择第一和第二参考电压中的任何一个,并且基于所选择的电压的电平来检测内部电压的电平; 以及内部电压产生单元,被配置为响应于电压电平检测单元的输出信号而产生内部电压。