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    • 2. 发明授权
    • Piezoelectric microspeaker and method of fabricating the same
    • 压电式微型扬声器及其制造方法
    • US08549715B2
    • 2013-10-08
    • US12428502
    • 2009-04-23
    • Dong-kyun KimSeok-whan ChungByung-gil Jeong
    • Dong-kyun KimSeok-whan ChungByung-gil Jeong
    • H01L41/22H04R17/00B21D53/76B23P17/00
    • H01L41/314H01L41/332H04R17/005H04R31/00H04R2201/003
    • A piezoelectric microspeaker fabricated by a method including: forming a lower drive unit by forming a first drive electrode by depositing and etching a first thin conductive layer on a substrate, forming a first piezoelectric plate by depositing and etching a first piezoelectric layer on the first drive electrode, and forming a first common electrode by depositing and etching a second conductive layer on the first piezoelectric plate; after forming the lower drive unit, forming a diaphragm by depositing a non-conductive layer on the first common electrode; and forming an upper drive unit by forming a second common electrode by depositing and etching a third conductive layer on the diaphragm, forming a second piezoelectric plate by depositing and etching a second piezoelectric layer on the second common electrode, and forming a second drive electrode by depositing and etching a fourth conductive layer on the second piezoelectric plate.
    • 一种通过以下方法制造的压电微型扬声器:包括:通过在基板上沉积和蚀刻第一薄导电层形成第一驱动电极而形成下驱动单元,通过在第一驱动器上沉积和蚀刻第一压电层形成第一压电板 并且通过在第一压电板上沉积和蚀刻第二导电层形成第一公共电极; 在形成下驱动单元之后,通过在第一公共电极上沉积非导电层形成隔膜; 以及通过在所述隔膜上沉积和蚀刻第三导电层形成第二公共电极而形成上部驱动单元,通过在所述第二公共电极上沉积和蚀刻第二压电层形成第二压电板,并且通过 沉积和蚀刻第二压电板上的第四导电层。
    • 10. 发明申请
    • MICRO-ELECTRO MECHANICAL SYSTEM DEVICE AND METHOD OF FORMING COMB ELECTRODES OF THE SAME
    • 微电子机械系统装置及其组合电极的形成方法
    • US20070284964A1
    • 2007-12-13
    • US11754414
    • 2007-05-29
    • Seok-whan ChungSeok-jin KangHyung ChoiHyun-ku Jeong
    • Seok-whan ChungSeok-jin KangHyung ChoiHyun-ku Jeong
    • H01G9/00H02N1/00
    • G02B26/0841B81B3/0086B81B2203/0136B81C1/00698
    • A micro-electro mechanical system (MEMS) device and a method of forming comb electrodes of the MEMS device are provided. The method includes forming a plurality of parallel trenches at regular intervals in one side of a first silicon substrate so as to define alternating first and second regions at different heights on the one side of the first silicon substrate, oxidizing the first silicon substrate in order to form an oxide layer in the first and second regions having different heights, forming a polysilicon layer on the oxide layer to at least fill up the trenches so as to level the oxide layer having different heights, bonding a second silicon substrate directly to a top surface of the polysilicon layer, selectively etching the second silicon substrate and the polysilicon layer using a first mask so as to form upper comb electrodes vertically aligned with the first regions, selectively etching the first silicon substrate using a second mask so as to form lower comb electrodes vertically aligned with the second regions, and removing the oxide layer interposed between the upper comb electrodes and the lower comb electrodes.
    • 提供了微电子机械系统(MEMS)装置和形成MEMS装置的梳状电极的方法。 该方法包括在第一硅衬底的一侧中以规则的间隔形成多个平行的沟槽,以便在第一硅衬底的一侧上限定不同高度的交替的第一和第二区域,氧化第一硅衬底,以便 在具有不同高度的第一和第二区域中形成氧化物层,在氧化物层上形成多晶硅层以至少填充沟槽,以使具有不同高度的氧化物层平坦化,将第二硅衬底直接接合到顶表面 使用第一掩模选择性地蚀刻第二硅衬底和多晶硅层,以形成与第一区域垂直对准的上梳状电极,使用第二掩模选择性地蚀刻第一硅衬底,从而形成下梳状电极 与第二区域垂直对准,以及去除介于上梳状电极和上梳状电极之间的氧化物层 下梳电极。