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1. 发明申请

US20100065865A1 METHOD OF FORMING NITRIDE SEMICONDUCTOR AND ELECTRONIC DEVICE COMPRISING THE SAME 有权
标题翻译：形成氮化物半导体的方法和包含该氮化物半导体的电子器件
公开(公告)号：US20100065865A1
公开(公告)日：2010-03-18
申请号：US12431576
申请日：2009-04-28
申请人： Dong-Jin BYUN , Bum-Joon Kim , Jung-Geun Jhin , Jong-Hyeob Baek
发明人： Dong-Jin BYUN , Bum-Joon Kim , Jung-Geun Jhin , Jong-Hyeob Baek
IPC分类号： H01L33/00 , H01L21/205 , H01L29/205
CPC分类号： H01L21/0237 , H01L21/0254 , H01L21/02658 , H01L29/167 , H01L29/2003 , H01L29/267 , H01L29/66462 , H01L33/007
摘要： A method of forming a nitride semiconductor through ion implantation and an electronic device including the same are disclosed. In the method, an ion implantation region composed of a line/space pattern is formed on a substrate at an ion implantation dose of more than 1E17 ions/cm2 to 5E18 ions/cm2 or less and an ion implantation energy of 30˜50 keV, and a metal nitride thin film is grown on the substrate by epitaxial lateral overgrowth, thereby decreasing lattice defects in the metal nitride thin film. Thus, the electronic device has improved efficiency.
摘要翻译：公开了一种通过离子注入形成氮化物半导体的方法和包括其的电子器件。在该方法中，以大于1E17离子/ cm 2至5E18离子/ cm 2以下的离子注入剂量和30〜50keV的离子注入能量，在基板上形成由线/空间图案构成的离子注入区域，并且通过外延横向过度生长在衬底上生长金属氮化物薄膜，从而减少金属氮化物薄膜中的晶格缺陷。因此，电子设备具有提高的效率。

2. 发明授权

US07977223B2 Method of forming nitride semiconductor and electronic device comprising the same 有权
标题翻译：形成氮化物半导体的方法及其制造方法
公开(公告)号：US07977223B2
公开(公告)日：2011-07-12
申请号：US12431576
申请日：2009-04-28
申请人： Dong-Jin Byun , Bum-Joon Kim , Jung-Geun Jhin , Jong-Hyeob Baek
发明人： Dong-Jin Byun , Bum-Joon Kim , Jung-Geun Jhin , Jong-Hyeob Baek
IPC分类号： H01L21/265
CPC分类号： H01L21/0237 , H01L21/0254 , H01L21/02658 , H01L29/167 , H01L29/2003 , H01L29/267 , H01L29/66462 , H01L33/007
摘要： A method of forming a nitride semiconductor through ion implantation and an electronic device including the same are disclosed. In the method, an ion implantation region composed of a line/space pattern is formed on a substrate at an ion implantation dose of more than 1E17 ions/cm2 to 5E18 ions/cm2 or less and an ion implantation energy of 30˜50 keV, and a metal nitride thin film is grown on the substrate by epitaxial lateral overgrowth, thereby decreasing lattice defects in the metal nitride thin film. Thus, the electronic device has improved efficiency.
摘要翻译：公开了一种通过离子注入形成氮化物半导体的方法和包括其的电子器件。在该方法中，以大于1E17离子/ cm 2至5E18离子/ cm 2以下的离子注入剂量和30〜50keV的离子注入能量，在基板上形成由线/空间图案构成的离子注入区域，并且通过外延横向过度生长在衬底上生长金属氮化物薄膜，从而减少金属氮化物薄膜中的晶格缺陷。因此，电子设备具有提高的效率。

3. 发明申请

US20100295087A1 Light Emitting Diode with High Electrostatic Discharge and Fabrication Method Thereof 有权
标题翻译：具有高静电放电的发光二极管及其制造方法
公开(公告)号：US20100295087A1
公开(公告)日：2010-11-25
申请号：US12523396
申请日：2008-01-15
申请人： Jong-Hyeob Baek , Sang-Mook Kim , Sang-Hern Lee , Seung-Jae Lee , Jung-Geun Jhin , Yoon-Seok Kim , Hong-Seo Yom , Young-Moon Yu
发明人： Jong-Hyeob Baek , Sang-Mook Kim , Sang-Hern Lee , Seung-Jae Lee , Jung-Geun Jhin , Yoon-Seok Kim , Hong-Seo Yom , Young-Moon Yu
IPC分类号： H01L33/02 , H01L33/42 , H01L33/62
CPC分类号： H01L33/385 , H01L27/15 , H01L33/42 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The present invention relates to a light emitting diode with high electrostatic discharge and a fabrication method thereof, and more specifically to a light emitting diode comprising a first electrode layer provided over a upper surface of a first semiconductor layer and a upper surface of a second semiconductor layer; a transparent electrode layer formed on the upper surface of the second semiconductor layer, spaced from the first electrode layer; and a second electrode layer provided on a upper surface of the transparent electrode layer. With the present invention, there is provided a light emitting diode element with resistance against electrostatic discharge and with high reliability being strong against electrical impact, by selecting a structure arranging a form of an electrode differently from a conventional electrode.
摘要翻译：本发明涉及一种具有高静电放电的发光二极管及其制造方法，更具体地涉及包括设置在第一半导体层的上表面上的第一电极层和第二半导体的上表面的发光二极管层; 形成在与第一电极层间隔开的第二半导体层的上表面上的透明电极层; 以及设置在所述透明电极层的上表面上的第二电极层。通过本发明，通过选择与常规电极不同的布置电极形式的结构，提供了具有抗静电放电的耐电击性和耐电击性的发光二极管元件。

4. 发明授权

US08294167B2 Light emitting diode with high electrostatic discharge and fabrication method thereof 有权
标题翻译：具有高静电放电的发光二极管及其制造方法
公开(公告)号：US08294167B2
公开(公告)日：2012-10-23
申请号：US12523396
申请日：2008-01-15
申请人： Jong-Hyeob Baek , Sang-Mook Kim , Sang-Hern Lee , Seung-Jae Lee , Jung-Geun Jhin , Yoon-Seok Kim , Hong-Seo Yom , Young-Moon Yu
发明人： Jong-Hyeob Baek , Sang-Mook Kim , Sang-Hern Lee , Seung-Jae Lee , Jung-Geun Jhin , Yoon-Seok Kim , Hong-Seo Yom , Young-Moon Yu
IPC分类号： H01L33/00 , H01L23/48 , H01L23/52 , H01L29/40 , H01L21/00
CPC分类号： H01L33/385 , H01L27/15 , H01L33/42 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2224/05599 , H01L2224/0555 , H01L2224/0556
摘要： The present invention relates to a light emitting diode with high electrostatic discharge and a fabrication method thereof, and more specifically to a light emitting diode comprising a first electrode layer provided over a upper surface of a first semiconductor layer and a upper surface of a second semiconductor layer; a transparent electrode layer formed on the upper surface of the second semiconductor layer, spaced from the first electrode layer; and a second electrode layer provided on a upper surface of the transparent electrode layer. With the present invention, there is provided a light emitting diode element with resistance against electrostatic discharge and with high reliability being strong against electrical impact, by selecting a structure arranging a form of an electrode differently from a conventional electrode.
摘要翻译：本发明涉及一种具有高静电放电的发光二极管及其制造方法，更具体地涉及包括设置在第一半导体层的上表面上的第一电极层和第二半导体的上表面的发光二极管层; 形成在与第一电极层间隔开的第二半导体层的上表面上的透明电极层; 以及设置在所述透明电极层的上表面上的第二电极层。通过本发明，通过选择与常规电极不同的布置电极形式的结构，提供了具有抗静电放电的耐电击性和耐电击性的发光二极管元件。

5. 发明授权

US5900056A Method for growing epitaxial layers of III-V compound semiconductors 失效
标题翻译：生长III-V族化合物半导体外延层的方法
公开(公告)号：US5900056A
公开(公告)日：1999-05-04
申请号：US769242
申请日：1996-12-18
申请人： Sung-Woo Choi , Jong-Hyeob Baek , Bun Lee
发明人： Sung-Woo Choi , Jong-Hyeob Baek , Bun Lee
IPC分类号： H01L21/20 , C30B25/10 , C30B25/14
CPC分类号： C30B25/105 , C30B29/40
摘要： The present invention relates to a method for growing new binary, ternary and quaternary epitaxial layers of III-V compound semiconductors which have the characteristics of low temperature growth, good stability and high-purity, using remote plasma, comprising the steps of converting H.sub.2 and He mixed gas into a plasma state; heating a high-purity of solid source to generate a vaporized source; reacting the vaporized source with H.sub.2 under the H.sub.2 and He plasma environment to produce V-hydrides in situ; introducing the V-hydrides directly into group III source without passing through the plasma; and reacting V-hydrides with group III source on a substrate to form an epitaxial thin layer of III-V compound semiconductors. According to the present invention, high-purity of epitaxial thin layer can be formed at a low temperature, an economical process that does not require an ultrahigh vacuum, a stabilized process that does not need to handle poisonous gas for the reaction with gropu V, and a simple process for manufacturing the various binary, ternary and quaternary compound semiconductor alloys can be provided. Thus, the method of the present invention can be applied to the future information and communication industry, for example, high speed, high frequency optical communication system with (Ga, In, Al)--(As, P, Sb) based on III-V compound semiconductor electronic and optical devices, and the circuitry thereof including heterojunction bipolar transistors, high electron mobility transistors, semiconductor lasers and optical switches.
摘要翻译：本发明涉及一种利用远程等离子体生长具有低温生长特性，稳定性好，高纯度等特点的III-V族化合物半导体二元，三元和四元外延层的方法，包括以下步骤：将H 2和他将气体混合成等离子体状态; 加热高纯度固体源以产生蒸发源; 在H 2和He等离子体环境下使蒸发源与H 2反应，原位产生V-氢化物; 将V型氢化物直接引入III族源而不通过等离子体; 并将V型氢化物与III族源反应在衬底上以形成III-V族化合物半导体的外延薄层。根据本发明，可以在低温下形成高纯度的外延薄层，不需要超高真空的经济工艺，不需要处理有毒气体用于与gropu V反应的稳定过程，并且可以提供制造各种二元，三元和四元化合物半导体合金的简单方法。因此，本发明的方法可以应用于将来信息通信行业，例如具有（Ga，In，Al） - （As，P，Sb）的高速，高频光通信系统， V化合物半导体电子和光学器件，其电路包括异质结双极晶体管，高电子迁移率晶体管，半导体激光器和光开关。

6. 发明授权

US5456206A Method for two-dimensional epitaxial growth of III-V compound semiconductors 失效
标题翻译： III-V化合物半导体的二维外延生长方法
公开(公告)号：US5456206A
公开(公告)日：1995-10-10
申请号：US350451
申请日：1994-12-07
申请人： Bun Lee , Mee-Young Yoon , Jong-Hyeob Baek
发明人： Bun Lee , Mee-Young Yoon , Jong-Hyeob Baek
IPC分类号： H01L21/20
CPC分类号： H01L21/02502 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/0262
摘要： A method for growing a thin InGaAs or InAlAs layer with heavy lattice mismatching on a GaAs substrate by a MOCVD process is described. A first material gas is injected by a MOCVD process to grow a buffer layer on a GaAs substrate to a prescribed thickness. After stopping the injection of the first material gas for a few seconds, a second material gas containing a column III element is injected at a prescribed temperature. A third material gas containing a column V element is injected to grow, on the buffer layer, a thin metallic layer of a binary compound containing the column III element of a high concentration to a thickness of 2 nm or less. After a prescribed time from the injection of the third material gas, In and Ga gases or In and Al gases, mixed in the prescribed proportion are injected in an atmosphere of said third material gas to grow a thin InGaAs or InAlAs layer on the thin metallic layer.
摘要翻译：描述了通过MOCVD工艺在GaAs衬底上生长具有重晶格失配的薄InGaAs或InAlAs层的方法。通过MOCVD法注入第一材料气体，以在GaAs衬底上生长规定厚度的缓冲层。在停止喷射第一原料气体几秒钟后，在规定温度下注入含有III族元素的第二原料气体。注入含有V族元素的第三材料气体，在缓冲层上生长含有高浓度的III族元素的二元化合物的薄金属层，厚度为2nm以下。在注入第三原料气体的规定时间后，在所述第三原料气体的气氛中注入以规定比例混合的In和Ga气体或In和Al气体，以在薄金属上生长薄的InGaAs或InAlAs层层。

7. 发明申请

US20140138613A1 LIGHT EMITTING DIODE HAVING HETEROGENEOUS PROTRUSION STRUCTURES 有权
标题翻译：具有异质结构的发光二极管
公开(公告)号：US20140138613A1
公开(公告)日：2014-05-22
申请号：US13679698
申请日：2012-11-16
申请人： Sang-Mook Kim , Jong-Hyeob Baek
发明人： Sang-Mook Kim , Jong-Hyeob Baek
IPC分类号： H01L33/22 , H01L33/00
CPC分类号： H01L33/22 , H01L33/005 , H01L33/24
摘要： An object of the present invention is to provide a light emitting diode having a heterogeneous material structure and a method of manufacturing thereof, in which efficiency of extracting light to outside is improved by forming depressions and prominences configured of heterogeneous materials different from each other before or in the middle of forming a semiconductor material on a substrate in order to improve the light extraction efficiency.
摘要翻译：本发明的目的是提供一种具有不均匀材料结构的发光二极管及其制造方法，其中通过在之前或之后形成由彼此不同的异质材料构成的凹陷和突出物来改善向外部提取光的效率，在衬底上形成半导体材料的中间，以提高光提取效率。

8. 发明授权

US5855669A Method for fabricating grating coupler 失效
标题翻译：光栅耦合器的制作方法
公开(公告)号：US5855669A
公开(公告)日：1999-01-05
申请号：US842872
申请日：1997-04-17
申请人： Jong-Hyeob Baek , Bun Lee
发明人： Jong-Hyeob Baek , Bun Lee
IPC分类号： G02B6/293 , C30B25/02 , G02B5/18 , G02B6/122 , G02B6/124 , G02B6/34 , H01L21/203 , C30B25/16
CPC分类号： C30B25/02 , C30B29/40 , G02B6/124 , G02B6/34
摘要： A grating coupler is formed by growing an optical waveguide layer on a substrate by an epitaxial growing process such as a metalorganic chemical vapor deposition and a molecular beam deposition. The optical waveguide layer has a surface on which a cross-hatch pattern serving as the grating is continuously formed. The optical waveguide layer is formed with a material having a reflective index greater than a reflective index of the substrate or an atmosphere. Specifically, the substrate is formed with GaAs and the optical waveguide layer is formed with InGaAs. Further, the substrate is an on-substrate having an orientation coinciding with a �100! plane, so as to form the optical waveguide layer having continuous cross-hatch patterns on the surface thereof. The spacing between the cross-hatch patterns can be varied according to variation of a growth temperature of the optical waveguide layer.
摘要翻译：通过外延生长工艺如金属有机化学气相沉积和分子束沉积在衬底上生长光波导层来形成光栅耦合器。光波导层具有连续形成用作光栅的交叉影线图案的表面。光波导层由具有大于基板的反射率或大气的反射率的材料形成。具体地，基板由GaAs形成，并且光波导层由InGaAs形成。此外，基板是具有与[100]面重合的取向的基板，从而在其表面上形成具有连续交叉图案的光波导层。交叉线图案之间的间隔可以根据光波导层的生长温度的变化而变化。

9. 发明授权

US08710520B2 Light emitting diode having multi-cell structure and method of manufacturing the same 有权
标题翻译：具有多单元结构的发光二极管及其制造方法
公开(公告)号：US08710520B2
公开(公告)日：2014-04-29
申请号：US13504522
申请日：2010-11-02
申请人： Sang-Mook Kim , Jong-Hyeob Baek , Kwang-Cheol Lee , Eun-Mi Yoo
发明人： Sang-Mook Kim , Jong-Hyeob Baek , Kwang-Cheol Lee , Eun-Mi Yoo
IPC分类号： H01L33/36
CPC分类号： H01L33/60 , H01L33/08 , H01L33/36 , H01L33/382 , H01L33/405 , H01L33/44 , H01L2933/0016
摘要： Disclosed is a light emitting diode having a multi-cell structure including a number of unit cells. The light emitting diode is capable of reducing light loss of the light emitting diode surface and improving light efficiency by bonding pads to be formed for contact between mesa etching regions for forming an electrode of the existing n-type semiconductor layers and p-type semiconductor layers. The light emitting diode is also capable of controlling chip size and manufacturing chips of different sizes from each other even when going through the same chip manufacturing process as the related art.
摘要翻译：公开了具有包括多个单电池的多单元结构的发光二极管。发光二极管能够减少发光二极管表面的光损失，并且通过形成用于形成现有n型半导体层的电极的台面蚀刻区域和p型半导体层之间的接合焊盘来提高光效率。即使经历与现有技术相同的芯片制造工艺，发光二极管也能够控制芯片尺寸和制造不同尺寸的芯片。

10. 发明授权

US5856206A Method for fabricating bragg reflector using in situ laser reflectometry 失效
标题翻译：使用原位激光反射法制造布拉格反射器的方法
公开(公告)号：US5856206A
公开(公告)日：1999-01-05
申请号：US842871
申请日：1997-04-17
申请人： Jong-Hyeob Baek , Bun Lee
发明人： Jong-Hyeob Baek , Bun Lee
IPC分类号： G02B5/08 , C23C14/54 , C23C16/52 , C30B29/40 , H01L21/205 , H01S5/00 , H01S5/028 , H01S5/183 , H01S5/187 , C23C14/00
CPC分类号： C23C16/52 , H01S5/0042 , H01S5/18361
摘要： A Bragg reflector with a uniform thickness is fabricated by means of an in-situ laser reflectometer. In order to fabricate the Bragg reflector, a plurality of buffer layers are formed on a semiconductor substrate. Then, first and second epitaxial layers are alternatively grown on the buffer layers. While growing the epitaxial layers, the thickness of the first and second epitaxial layers are continuously measured by using a laser beam having the same wavelength as a reflective wavelength of the Bragg reflector. In this way, the thickness of the Bragg reflector is precisely controlled according to the measurements, so that the Bragg reflector may be fabricated uniformly with a predetermined thickness.
摘要翻译：具有均匀厚度的布拉格反射器通过原位激光反射计制造。为了制造布拉格反射器，在半导体衬底上形成多个缓冲层。然后，在缓冲层上交替生长第一和第二外延层。在生长外延层的同时，通过使用具有与布拉格反射器的反射波长相同的波长的激光束来连续测量第一和第二外延层的厚度。以这种方式，根据测量精确地控制布拉格反射器的厚度，使得可以以预定厚度均匀地制造布拉格反射器。

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