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    • 2. 发明授权
    • Method for two-dimensional epitaxial growth of III-V compound
semiconductors
    • III-V化合物半导体的二维外延生长方法
    • US5456206A
    • 1995-10-10
    • US350451
    • 1994-12-07
    • Bun LeeMee-Young YoonJong-Hyeob Baek
    • Bun LeeMee-Young YoonJong-Hyeob Baek
    • H01L21/20
    • H01L21/02502H01L21/02395H01L21/02463H01L21/02546H01L21/0262
    • A method for growing a thin InGaAs or InAlAs layer with heavy lattice mismatching on a GaAs substrate by a MOCVD process is described. A first material gas is injected by a MOCVD process to grow a buffer layer on a GaAs substrate to a prescribed thickness. After stopping the injection of the first material gas for a few seconds, a second material gas containing a column III element is injected at a prescribed temperature. A third material gas containing a column V element is injected to grow, on the buffer layer, a thin metallic layer of a binary compound containing the column III element of a high concentration to a thickness of 2 nm or less. After a prescribed time from the injection of the third material gas, In and Ga gases or In and Al gases, mixed in the prescribed proportion are injected in an atmosphere of said third material gas to grow a thin InGaAs or InAlAs layer on the thin metallic layer.
    • 描述了通过MOCVD工艺在GaAs衬底上生长具有重晶格失配的薄InGaAs或InAlAs层的方法。 通过MOCVD法注入第一材料气体,以在GaAs衬底上生长规定厚度的缓冲层。 在停止喷射第一原料气体几秒钟后,在规定温度下注入含有III族元素的第二原料气体。 注入含有V族元素的第三材料气体,在缓冲层上生长含有高浓度的III族元素的二元化合物的薄金属层,厚度为2nm以下。 在注入第三原料气体的规定时间后,在所述第三原料气体的气氛中注入以规定比例混合的In和Ga气体或In和Al气体,以在薄金属上生长薄的InGaAs或InAlAs层 层。