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1. 发明申请

US20080302760A1 Method of forming a metal layer pattern having a nanogap and method of manufacturing a molecule-sized device using the same 有权
标题翻译：形成具有纳米凹槽的金属层图案的方法和使用其制造分子尺寸的装置的方法
公开(公告)号：US20080302760A1
公开(公告)日：2008-12-11
申请号：US12149388
申请日：2008-04-30
申请人： Dong-Gun Park , Dong-Won Kim , Sung-Young Lee , Yang-Kyu Choi , Chang-Hoon Kim , Ju-Hyun Kim
发明人： Dong-Gun Park , Dong-Won Kim , Sung-Young Lee , Yang-Kyu Choi , Chang-Hoon Kim , Ju-Hyun Kim
IPC分类号： C23F1/00
CPC分类号： H01L21/32131 , H01L29/0649 , H01L29/78 , Y10T428/11
摘要： A method of patterning a metal layer includes forming a first mask on a surface of the metal layer, the first mask having an opening through the first mask that exposes the metal layer, and forming a nanogap in the exposed metal layer using an ion beam directed through the opening. The first mask limits a lateral extent of the ion beam, and the nanogap has a width that is less than a width of the opening.
摘要翻译：图案化金属层的方法包括在金属层的表面上形成第一掩模，第一掩模具有通过暴露金属层的第一掩模的开口，并且在暴露的金属层中使用定向的离子束形成纳米隙通过开放。第一掩模限制离子束的横向范围，并且纳米隙具有小于开口宽度的宽度。

2. 发明授权

US08211322B2 Method of forming a metal layer pattern having a nanogap and method of manufacturing a molecule-sized device using the same 有权
标题翻译：形成具有纳米凹槽的金属层图案的方法和使用其制造分子尺寸的装置的方法
公开(公告)号：US08211322B2
公开(公告)日：2012-07-03
申请号：US12149388
申请日：2008-04-30
申请人： Dong-Gun Park , Dong-Won Kim , Sung-Young Lee , Yang-Kyu Choi , Chang-Hoon Kim , Ju-Hyun Kim
发明人： Dong-Gun Park , Dong-Won Kim , Sung-Young Lee , Yang-Kyu Choi , Chang-Hoon Kim , Ju-Hyun Kim
IPC分类号： C23F1/00
CPC分类号： H01L21/32131 , H01L29/0649 , H01L29/78 , Y10T428/11
摘要： A method of patterning a metal layer includes forming a first mask on a surface of the metal layer, the first mask having an opening through the first mask that exposes the metal layer, and forming a nanogap in the exposed metal layer using an ion beam directed through the opening. The first mask limits a lateral extent of the ion beam, and the nanogap has a width that is less than a width of the opening.
摘要翻译：图案化金属层的方法包括在金属层的表面上形成第一掩模，第一掩模具有通过暴露金属层的第一掩模的开口，并且在暴露的金属层中使用定向的离子束形成纳米隙通过开放。第一掩模限制离子束的横向范围，并且纳米隙具有小于开口宽度的宽度。

3. 发明授权

US08344367B2 Molecular devices and methods of manufacturing the same 有权
标题翻译：分子装置及其制造方法
公开(公告)号：US08344367B2
公开(公告)日：2013-01-01
申请号：US12929118
申请日：2011-01-03
申请人： Dong-Won Kim , Dong-Gun Park , Sung-Young Lee , Yang-Kyu Choi , Lee-Eun Yu
发明人： Dong-Won Kim , Dong-Gun Park , Sung-Young Lee , Yang-Kyu Choi , Lee-Eun Yu
IPC分类号： H01L29/08
CPC分类号： H01L51/0595 , B82Y10/00 , G11C13/0014 , H01L51/102 , Y10T428/24
摘要： Molecular devices and methods of manufacturing the molecular device are provided. The molecular device may include a lower electrode on a substrate and a self-assembled monolayer on the lower electrode. After an upper electrode is formed on the self-assembled monolayer, the self-assembled monolayer may be removed to form a gap between the lower electrode and the upper electrode. A functional molecule having a functional group may be injected into the gap.
摘要翻译：提供了制造分子装置的分子装置和方法。分子器件可以包括在基底上的下电极和下电极上的自组装单层。在自组装单层上形成上电极之后，可以去除自组装单层以在下电极和上电极之间形成间隙。可以将具有官能团的功能性分子注入到间隙中。

4. 发明授权

US07883932B2 Molecular devices and methods of manufacturing the same 有权
标题翻译：分子装置及其制造方法
公开(公告)号：US07883932B2
公开(公告)日：2011-02-08
申请号：US12068765
申请日：2008-02-12
申请人： Dong-Won Kim , Dong-Gun Park , Sung-Young Lee , Yang-Kyu Choi , Lee-Eun Yu
发明人： Dong-Won Kim , Dong-Gun Park , Sung-Young Lee , Yang-Kyu Choi , Lee-Eun Yu
IPC分类号： H01L21/00 , H01L51/40
CPC分类号： H01L51/0595 , B82Y10/00 , G11C13/0014 , H01L51/102 , Y10T428/24
摘要： Molecular devices and methods of manufacturing the molecular device are provided. The molecular device may include a lower electrode on a substrate and a self-assembled monolayer on the lower electrode. After an upper electrode is formed on the self-assembled monolayer, the self-assembled monolayer may be removed to form a gap between the lower electrode and the upper electrode. A functional molecule having a functional group may be injected into the gap.
摘要翻译：提供了制造分子装置的分子装置和方法。分子器件可以包括在基底上的下电极和下电极上的自组装单层。在自组装单层上形成上电极之后，可以去除自组装单层以在下电极和上电极之间形成间隙。可以将具有官能团的功能性分子注入到间隙中。

5. 发明申请

US20080193705A1 Molecular devices and methods of manufacturing the same 有权
标题翻译：分子装置及其制造方法
公开(公告)号：US20080193705A1
公开(公告)日：2008-08-14
申请号：US12068765
申请日：2008-02-12
申请人： Dong-Won Kim , Dong-Gun Park , Sung-Young Lee , Yang-Kyu Choi , Lee-Eun Yu
发明人： Dong-Won Kim , Dong-Gun Park , Sung-Young Lee , Yang-Kyu Choi , Lee-Eun Yu
IPC分类号： B32B5/00 , B05D5/12
CPC分类号： H01L51/0595 , B82Y10/00 , G11C13/0014 , H01L51/102 , Y10T428/24
摘要： Molecular devices and methods of manufacturing the molecular device are provided. The molecular device may include a lower electrode on a substrate and a self-assembled monolayer on the lower electrode. After an upper electrode is formed on the self-assembled monolayer, the self-assembled monolayer may be removed to form a gap between the lower electrode and the upper electrode. A functional molecule having a functional group may be injected into the gap.
摘要翻译：提供了制造分子装置的分子装置和方法。分子器件可以包括在基底上的下电极和下电极上的自组装单层。在自组装单层上形成上电极之后，可以去除自组装单层以在下电极和上电极之间形成间隙。可以将具有官能团的功能性分子注入到间隙中。

6. 发明申请

US20060154400A1 Method of forming a nanogap and method of manufacturing a nano field effect transitor for molecular device and bio-sensor, and molecular device and bio-sensor manufactured using the same 审中-公开
标题翻译：形成纳米间隙的方法和制造用于分子装置和生物传感器的纳米场效应转移体的方法以及使用其制造的分子装置和生物传感器
公开(公告)号：US20060154400A1
公开(公告)日：2006-07-13
申请号：US11328789
申请日：2006-01-10
申请人： Yang-Kyu Choi , Ju-Hyun Kim
发明人： Yang-Kyu Choi , Ju-Hyun Kim
IPC分类号： H01L21/00 , G03C5/00
CPC分类号： G01N33/54373 , B82Y10/00 , B82Y15/00 , B82Y30/00 , G01N33/552 , G01N33/553 , G01N2610/00
摘要： The present invention relates to a method of forming a nanogap, a method of manufacturing a nano field effect transistor for a molecular device or a bio-sensor, and a fabrication thereof, and more particularly, to a method of forming a high reproductive nanogap using a thin layer with a molecular size or a size which is similar to that of a molecule and a nano field effect transistor manufactured by the method of forming the nanogap. The method of forming a nanogap according to the present invention comprises steps of (a) forming sequentially an insulating layer, a first metal layer and a hard mask on a silicon substrate; (b) etching partially the first metal layer using the mask as an etching mask; (c) forming a self-assembled monolayer (SAM) on a side surface of the first metal layer to form a nanogap on the silicon substrate; (d) depositing metal on the entire structure including the mask to form a second metal layer; (e) removing the metal deposited on the hard mask using a lift-off process by etching the mask formed in step (a) and (f) etching the SAM formed in step (c) to form the nanogap.
摘要翻译：本发明涉及形成纳米间隙的方法，制造用于分子器件或生物传感器的纳米场效应晶体管的方法及其制造方法，更具体地说，涉及一种使用通过形成纳米凹槽的方法制造的分子尺寸或尺寸与分子尺寸相似的薄层和纳米场效应晶体管制成的薄层。根据本发明的形成纳米间隙的方法包括以下步骤：（a）在硅衬底上依次形成绝缘层，第一金属层和硬掩模; （b）使用掩模作为蚀刻掩模部分地蚀刻第一金属层; （c）在第一金属层的侧表面上形成自组装单层（SAM），以在硅衬底上形成纳米隙; （d）在包括所述掩模的整个结构上沉积金属以形成第二金属层; （e）通过蚀刻步骤（a）中形成的掩模和（f）蚀刻步骤（c）中形成的SAM以形成纳米凹槽，使用剥离工艺去除沉积在硬掩模上的金属。

7. 发明授权

US06455577B2 Flavanone derivatives and composition for preventing or treating blood lipid level-related diseases comprising same 失效
标题翻译：用于预防或治疗包含其的血脂水平相关疾病的黄酮酮衍生物和组合物
公开(公告)号：US06455577B2
公开(公告)日：2002-09-24
申请号：US09768740
申请日：2001-01-24
申请人： Song-Hae Bok , Tae-Sook Jeong , Sang-Ku Lee , Ju-Ryong Kim , Surk-Sik Moon , Myung-Sook Choi , Byung-Hwa Hyun , Chul-Ho Lee , Yang-Kyu Choi
发明人： Song-Hae Bok , Tae-Sook Jeong , Sang-Ku Lee , Ju-Ryong Kim , Surk-Sik Moon , Myung-Sook Choi , Byung-Hwa Hyun , Chul-Ho Lee , Yang-Kyu Choi
IPC分类号： A61K3135
CPC分类号： A23L2/52 , A23L13/42 , A23L27/63 , A23L33/105 , A23V2002/00 , C07D311/32 , A23V2250/2116
摘要： A compound of formula (I) treating or preventing an elevated blood lipid level-related disease and inhibiting the activities of acyl-CoA:cholesterol-O-acyltransferase(ACAT) and 3-hydroxy-3-methylglutaryl CoA(HMG-CoA) reductase: wherein, R1 is R5 R6CO group; R2 is H or R6CO group; R3 is H, CH3, R5 or R6CO group; R4 is H, OH, OR5 or R6COO group; R5 is a C2-5 alkyl group substituted with a phenyl group optionally having one or more substituents selected from the group consisting of C1-3 alkyl, OH, Cl and NO2; a C1-5 alkyl group substituted with a naphthyl group optionally having one or more substituents selected from the group consisting of C1-3 alkyl, OH, Cl and NO2; a C10-18 alkyl; or a C10-18 alkenyl group; and R6 is a C10-18 alkenyl group; or an aryl group optionally having one or more substituents selected from the group consisting of C1-3 alkyl, OH, Cl or NO2.
摘要翻译：治疗或预防血脂水平升高相关疾病和抑制酰基辅酶A：胆固醇-O-酰基转移酶（ACAT）和3-羟基-3-甲基戊二酰辅酶A（HMG-CoA）还原酶活性的式（I）化合物其中，R1为R5 R6CO基; R2为H或R6CO基; R3为H，CH3，R5或R6CO基; R4为H，OH，OR5或R6COO基; R5为被苯基取代的C2-5烷基基团任选具有一个或多个选自C 1-3烷基，OH，Cl和NO 2的取代基; 被任选具有一个或多个选自C 1-3烷基，OH，Cl和NO 2的取代基的萘基取代的C 1-5烷基; C10-18烷基; 或C 10-18烯基; 和R6是C10-18烯基; 或任选具有一个或多个选自C 1-3烷基，OH，Cl或NO 2的取代基的芳基。

8. 发明授权

US08486287B2 Methods for fabrication of positional and compositionally controlled nanostructures on substrate 有权
标题翻译：在衬底上制造位置和组成受控的纳米结构的方法
公开(公告)号：US08486287B2
公开(公告)日：2013-07-16
申请号：US10599106
申请日：2004-10-14
申请人： Ji Zhu , Jeff Grunes , Yang-Kyu Choi , Jeffrey Bokor , Gabor Somorjai
发明人： Ji Zhu , Jeff Grunes , Yang-Kyu Choi , Jeffrey Bokor , Gabor Somorjai
IPC分类号： H01L21/285 , H01L21/302 , H01L27/00
CPC分类号： H01L21/3086 , B81C1/00111 , B82Y10/00 , G03F7/40 , H01L21/3088 , H01L29/0665 , H01L29/0673 , H01L29/0676 , H01L29/66795 , H01L29/785
摘要： Fabrication methods disclosed herein provide for a nanoscale structure or a pattern comprising a plurality of nanostructures of specific predetermined position, shape and composition, including nanostructure arrays having large area at high throughput necessary for industrial production. The resultant nanostracture patterns are useful for nanostructure arrays, specifically sensor and catalytic arrays.
摘要翻译：本文公开的制造方法提供纳米尺度结构或包含特定预定位置，形状和组成的多个纳米结构的图案，包括工业生产所需的高通量的具有大面积的纳米结构阵列。所得的纳米结构图案可用于纳米结构阵列，特别是传感器和催化剂阵列。

9. 发明申请

US20090047488A1 COUNTERFEIT PREVENTION PAPER AND MANUFACTURING METHOD THEREOF 有权
标题翻译：防伪纸及其制造方法
公开(公告)号：US20090047488A1
公开(公告)日：2009-02-19
申请号：US12189074
申请日：2008-08-08
申请人： Yang-Kyu Choi , Oktay Yarimaga , Kuk-Hwan Kim , Hyun Gyu Park , Tae Won Kim , Yun Kyung Jung
发明人： Yang-Kyu Choi , Oktay Yarimaga , Kuk-Hwan Kim , Hyun Gyu Park , Tae Won Kim , Yun Kyung Jung
IPC分类号： B32B3/10 , B05D1/36
CPC分类号： D21H21/44 , B42D15/0033 , B42D25/29 , Y10T428/24934
摘要： The present invention relates to a counterfeit prevention paper and manufacturing method thereof, and more particularly to currency, securities, official document and several certificates, etc.The counterfeit prevention paper according to the present invention comprises a paper and a thermopaint layer which is formed on a paper and is discolored according to a temperature.The counterfeit prevention paper according to the present invention can detect easily a counterfeit by an unaided eye. Also, a function for preventing a counterfeit is not copied by a counterfeit device, thus the counterfeit prevent paper according to the present invention can improve a reliability of various official documents and several certificates, etc.
摘要翻译：本发明涉及防伪纸及其制造方法，更具体地涉及货币，证券，官方文件和若干证书等。根据本发明的防伪纸包括纸和热电影层，其形成在一张纸，根据温度变色。根据本发明的防伪纸可以通过肉眼容易地检测伪造的伪造品。此外，防伪品的功能不被仿冒装置复制，因此根据本发明的防伪纸可以提高各种官方文件和几种证书等的可靠性。

10. 发明授权

US07491597B2 Flash memory device capable of erasing flash blocks in SOI substrate based on back-bias, method for manufacturing the same, and flash block erasion method and structure thereof 失效
标题翻译：基于背偏的能够擦除SOI衬底中的闪存块的闪速存储器件及其制造方法和闪存块擦除方法及其结构
公开(公告)号：US07491597B2
公开(公告)日：2009-02-17
申请号：US11380347
申请日：2006-04-26
申请人： Yang-Kyu Choi , Hyunjin Lee
发明人： Yang-Kyu Choi , Hyunjin Lee
IPC分类号： H01L21/8238
CPC分类号： H01L27/11568 , H01L27/115 , H01L27/1203
摘要： Provided is a flash memory, and more particularly, to a method and structure for erasing flash blocks based on back-bias. The method comprises the steps of forming a flash block on a silicon on insulator (SOI) substrate and forming a body-electrode on back side of the silicon on insulator (SOI) substrate.
摘要翻译：提供了一种闪速存储器，更具体地，涉及一种用于基于反向偏置来擦除闪存块的方法和结构。该方法包括以下步骤：在绝缘体上硅（SOI）衬底上形成闪存块，并在绝缘体上硅衬底（SOI）衬底背面形成体电极。

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