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1. 发明申请

US20070058415A1 Method for depositing ferroelectric thin films using a mixed oxidant gas 审中-公开
标题翻译：使用混合氧化剂气体沉积铁电薄膜的方法
公开(公告)号：US20070058415A1
公开(公告)日：2007-03-15
申请号：US11520623
申请日：2006-09-14
申请人： Dong-Hyun Im , Byoung-Jae Bae , Ji-Eun Lim , Dong-Chul Yoo , Yeon-Kyu Jung
发明人： Dong-Hyun Im , Byoung-Jae Bae , Ji-Eun Lim , Dong-Chul Yoo , Yeon-Kyu Jung
IPC分类号： G11C11/22
CPC分类号： H01L28/55 , C23C16/409 , H01L27/11502 , H01L28/65
摘要： Disclosed are methods of forming ferroelectric material layers introducing a plurality of metallorganic source compounds into the reaction chamber, the source compounds being supplied in an appropriate ratio for forming the ferroelectric material. These metallorganic source compounds are, in turn, reacted with a NyOx/O2 oxidant gas mixture in which the NyOxcomponent(s) represents at least 50 volume percent of the oxidant gas. This mixture of metallorganic source compounds and oxidant gas mixture(s) are maintained at a deposition temperature and deposition pressure within the reaction chamber suitable for causing a reaction between the metallorganic source compounds and the oxidant gas for a deposition period sufficient to form the ferroelectric material layer. The resulting ferroelectric material layers exhibit improved uniformity, for example, near the interface with the bottom electrode.
摘要翻译：公开了形成将多个金属有机源化合物引入反应室的铁电材料层的方法，以适当的比例供给源化合物以形成铁电体材料。这些金属有机源化合物又与N 2 O 2 O 2 / O 2 O 2氧化剂气体混合物反应，其中N“ y O x分量代表氧化剂气体的至少50体积％。金属有机源化合物和氧化剂气体混合物的混合物保持在反应室内的沉积温度和沉积压力，适于在金属有机源化合物和氧化剂气体之间产生足以形成铁电材料的沉积时间层。所得到的铁电材料层表现出改善的均匀性，例如在与底部电极的界面附近。

2. 发明申请

US20060174827A1 Apparatus for manufacturing semiconductor device 审中-公开
标题翻译：半导体器件制造装置
公开(公告)号：US20060174827A1
公开(公告)日：2006-08-10
申请号：US11329451
申请日：2006-01-10
申请人： Byoung-Jae Bae , Ji-Eun Lim , Yeon-Kyu Jung
发明人： Byoung-Jae Bae , Ji-Eun Lim , Yeon-Kyu Jung
IPC分类号： C30B11/00
CPC分类号： C23C16/45589 , C23C16/45563 , C23C16/45565 , C23C16/45591 , C30B35/00 , Y10T117/10
摘要： A deposition apparatus is provided that has a reaction-chamber, a wafer support, gas supply line, an ejection unit and a diffusion unit. The ejection unit includes a bottom portion spaced apart from a top wall of the reaction chamber to form a space. The diffusion unit is positioned below the gas supply line and includes a planar portion having upwardly extending flanges forming an upwardly open space below the gas supply line. Gas flowing from the gas supply line flows into the upwardly open space and ascends the upwardly extending flanges to diffuse the gas into the space.
摘要翻译：提供一种沉积设备，其具有反应室，晶片支撑件，气体供应管线，喷射单元和扩散单元。喷射单元包括与反应室的顶壁间隔开的底部，以形成空间。扩散单元位于气体供应管线的下方并且包括具有向上延伸的凸缘的平面部分，其在气体供应管线下方形成向上开放的空间。从气体供应管线流出的气体流入向上开放的空间并向上延伸的凸缘上升，以将气体扩散到空间中。

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