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1. 再颁专利

USRE37032E1 Layered and homogeneous films of aluminum and aluminum/silicon with titanium and tungsten for multilevel interconnects 有权
标题翻译：具有钛和钨的铝和铝/硅的分层和均匀的薄膜用于多层互连
公开(公告)号：USRE37032E1
公开(公告)日：2001-01-30
申请号：US09253492
申请日：1999-02-19
申请人： Donald S. Gardner , Krishna C. Saraswat , Troy W. Barbee, Jr.
发明人： Donald S. Gardner , Krishna C. Saraswat , Troy W. Barbee, Jr.
IPC分类号： H01L2912
CPC分类号： H01L23/53223 , H01L2924/0002 , Y10T428/12528 , Y10T428/12632 , Y10T428/12743 , H01L2924/00
摘要： Layered structures (e.g., Al-Si/Ti/Al-Si . . . ) and homogeneous alloys of aluminum and aluminum/1 at. % silicon with titanium and tungsten and other refractory metals have been found to significantly reduce hillock densities in the films when small amounts of titanium or tungsten are homogeneously added. However, the resistivity of the films can become excessive. In addition, a new type of low density hillock can form. Layering of the films eliminates all hillocks and results in films of low resistivity. Such layered and homogeneous films made with Al-Si and Ti were found to be dry etchable. Electrical shorts in test structures with two levels of metal and LPCVD SiO2 as an interlayer dielectric have been characterized and layered films using Al-Si and Ti gave excellent results.
摘要翻译：层状结构（例如Al-Si / Ti / Al-Si ...）和铝和铝/ 1的均匀合金。已经发现，当少量的钛或钨被均匀地加入时，已经发现具有钛和钨和其它难熔金属的％硅显着降低膜中的小丘密度。然而，膜的电阻率可能变得过大。另外，可以形成一种新型的低密度小丘。膜的分层消除了所有的小丘并导致低电阻率的薄膜。发现用Al-Si和Ti制成的这种层状和均匀的膜是可干蚀刻的。已经表征了具有两层金属和LPCVD SiO2作为层间电介质的测试结构中的电短路，并且使用Al-Si和Ti的分层膜具有优异的结果。

2. 发明授权

US4673623A Layered and homogeneous films of aluminum and aluminum/silicon with titanium and tungsten for multilevel interconnects 失效
标题翻译：具有钛和钨的铝和铝/硅的分层和均匀的薄膜用于多层互连
公开(公告)号：US4673623A
公开(公告)日：1987-06-16
申请号：US731174
申请日：1985-05-06
申请人： Donald S. Gardner , Krishna C. Saraswat , Troy W. Barbee, Jr.
发明人： Donald S. Gardner , Krishna C. Saraswat , Troy W. Barbee, Jr.
IPC分类号： H01L23/532 , H01L23/48
CPC分类号： H01L23/53223 , H01L2924/0002 , Y10T428/12528 , Y10T428/12632 , Y10T428/12743
摘要： Layered structures (e.g., Al-Si/Ti/Al-Si . . . ) and homogeneous alloys of aluminum and aluminum/1 at. % silicon with titanium and tungsten and other refractory metals have been found to significantly reduce hillock densities in the films when small amounts of titanium or tungsten are homogeneously added. However, the resistivity of the films can become excessive. In addition, a new type of low density hillock can form. Layering of the films eliminates all hillocks and results in films of low resistivity. Such layered and homogeneous films made with Al-Si and Ti were found to be dry etchable. Electrical shorts in test structures with two levels of metal and LPCVD SiO.sub.2 as an interlayer dielectric have been characterized and layered films using Al-Si and Ti gave excellent results.
摘要翻译：层状结构（例如Al-Si / Ti / Al-Si ...）和铝和铝/ 1的均匀合金。已经发现，当少量的钛或钨被均匀地加入时，已经发现具有钛和钨和其它难熔金属的％硅显着降低膜中的小丘密度。然而，膜的电阻率可能变得过大。另外，可以形成一种新型的低密度小丘。膜的分层消除了所有的小丘并导致低电阻率的薄膜。发现用Al-Si和Ti制成的这种层状和均匀的膜是可干蚀刻的。已经表征了具有两层金属和LPCVD SiO2作为层间电介质的测试结构中的电短路，并且使用Al-Si和Ti的分层膜具有优异的结果。

3. 发明授权

US10170244B2 Fabrication of porous silicon electrochemical capacitors 有权
公开(公告)号：US10170244B2
公开(公告)日：2019-01-01
申请号：US13997881
申请日：2011-12-27
申请人： Donald S. Gardner , Cary L. Pint , Charles W. Holzwarth , Wei Jin , Zhaohui Chen , Yang Liu , Eric C. Hannah , John L. Gustafson
发明人： Donald S. Gardner , Cary L. Pint , Charles W. Holzwarth , Wei Jin , Zhaohui Chen , Yang Liu , Eric C. Hannah , John L. Gustafson
IPC分类号： H01G11/86 , H01G4/008 , H01G11/30 , H01G11/00 , H01G11/26
摘要： Methods of forming microelectronic structures are described. Embodiments of those methods may include forming an electrochemical capacitor device by forming pores in low-purity silicon materials. Various embodiments described herein enable the fabrication of high capacitive devices using low cost techniques.

4. 发明申请

US20160379752A1 VARIABLE INDUCTOR AND WIRELESS COMMUNICATION DEVICE INCLUDING VARIABLE DEVICE FOR CONVERSION OF A BASEBAND SIGNAL TO A RADIO FREQUENCY (RF) RANGE 有权
标题翻译：可变电感器和无线通信装置，包括用于将基带信号转换成无线电频率（RF）范围的可变装置
公开(公告)号：US20160379752A1
公开(公告)日：2016-12-29
申请号：US14752180
申请日：2015-06-26
申请人： Donald S. Gardner , Hossein Alavi
发明人： Donald S. Gardner , Hossein Alavi
IPC分类号： H01F29/14 , H01F38/14
CPC分类号： H01F29/14 , H01F17/0033 , H01F21/00 , H01F29/146 , H01F38/14 , H01F2029/143 , H01F2038/143 , H04B1/005 , H04B1/1638 , H04B1/18 , H04B1/403
摘要： Embodiments of a variable inductor and a communication device are generally described herein. The variable inductor may comprise a signal wire and a control wire to receive a direct current (DC) control current. The variable inductor may further comprise a magnetic material integrated with the signal wire and the control wire. When a DC control current applied to the control wires takes a first current value, an inductance between an input node and an output node on the signal wire may take a first inductance value. When the DC control current takes a second current value, the inductance between the input node and the output node may take a second inductance value.
摘要翻译：可变电感器和通信装置的实施例一般在此描述。可变电感器可以包括信号线和用于接收直流（DC）控制电流的控制线。可变电感器还可以包括与信号线和控制线集成的磁性材料。当施加到控制线的DC控制电流取第一电流值时，信号线上的输入节点和输出节点之间的电感可以采用第一电感值。当DC控制电流取第二个电流值时，输入节点和输出节点之间的电感可能会产生第二个电感值。

5. 发明申请

US20150003033A1 THREE DIMENSIONAL ENERGY STORAGE DEVICE, METHOD OF MANUFACTURING SAME, AND MOBILE ELECTRONIC DEVICE CONTAINING SAME 有权
标题翻译：三维能量储存装置，其制造方法和含有其的移动电子装置
公开(公告)号：US20150003033A1
公开(公告)日：2015-01-01
申请号：US13929224
申请日：2013-06-27
申请人： Yang Liu , Priyanka Pande , Bum Ki Moon , Michael C. Graf , Donald S. Gardner , Nicolas Cirigliano , Shanthi Murali , Zhaohui Chen
发明人： Yang Liu , Priyanka Pande , Bum Ki Moon , Michael C. Graf , Donald S. Gardner , Nicolas Cirigliano , Shanthi Murali , Zhaohui Chen
IPC分类号： H01G9/048 , H01L23/50 , H01M4/52 , H01M4/04 , H01M4/485 , H01M4/505
CPC分类号： H01G11/84 , H01G11/26 , H01G11/46 , H01G11/50 , H01M2/145 , H01M2/1673 , H01M4/0421 , H01M4/0433 , H01M4/0473 , H01M4/13 , H01M4/131 , H01M4/136 , H01M4/139 , H01M4/5815 , H01M4/70 , H01M6/40 , H01M10/052 , H01M10/0565 , H01M10/058 , H01M2004/021 , H01M2004/025 , H01M2220/30 , Y02E60/13 , Y02T10/7011 , Y02T10/7022 , Y10T29/49108 , Y10T29/49115
摘要： An energy storage device includes an electrode made from an active material in which a plurality of channels have been etched. The channels are coated with an electrically functional substance selected from a conductor and an electrolyte.
摘要翻译：能量存储装置包括由多个通道被蚀刻的活性材料制成的电极。通道涂有选自导体和电解质的电功能物质。

6. 发明授权

US08884438B2 Magnetic microinductors for integrated circuit packaging 有权
标题翻译：用于集成电路封装的磁性微型电感器
公开(公告)号：US08884438B2
公开(公告)日：2014-11-11
申请号：US12823968
申请日：2010-06-25
申请人： Donald S. Gardner , Larry E. Mosley
发明人： Donald S. Gardner , Larry E. Mosley
IPC分类号： H01L23/48 , H01L21/8242 , H01F10/187 , H01F41/04 , H01F17/00 , H01F27/34
CPC分类号： H01F17/0033 , H01F10/187 , H01F10/265 , H01F27/34 , H01F41/046 , H01F2017/002 , H01F2017/0053 , H01F2017/0066 , Y10T29/49165
摘要： Magnetic microinductors formed on semiconductor packages are provided. The magnetic microinductors are formed as one or more layers of coplanar magnetic material on a package substrate. Conducting vias extend perpendicularly through the plane of the magnetic film. The magnetic film is a layer of isotropic magnetic material or a plurality of layers of anisotropic magnetic material having differing hard axes of magnetization.
摘要翻译：提供了形成在半导体封装上的磁微电感器。磁性微型电感器在封装衬底上形成为一层或多层共面磁性材料。导电通孔垂直延伸穿过磁性膜的平面。磁性膜是具有不同的硬磁化轴的各向同性磁性材料层或多层各向异性磁性材料。

7. 发明授权

US08816465B1 Energy conversion and storage device and mobile electronic device containing same 有权
标题翻译：能量转换和存储设备和包含相同的移动电子设备
公开(公告)号：US08816465B1
公开(公告)日：2014-08-26
申请号：US13773849
申请日：2013-02-22
申请人： Donald S. Gardner , Cary L. Pint
发明人： Donald S. Gardner , Cary L. Pint
IPC分类号： H01L31/02 , H01G11/26
CPC分类号： H01G11/26 , H01G9/20 , H01L31/053 , H02S40/38 , Y02E10/50 , Y02E60/13
摘要： An energy conversion and storage device includes an energy storage component (530, 601) including a first electrode (611) having a first plurality of channels (612) formed in a first region (615) of a first material (617), a second electrode (621) adjacent to but electrically isolated from the first electrode and having a second plurality of channels (622) formed in a first region (625) of a second material (627), and an electrolyte (650) within the first and second pluralities of channels. The first electrode forms a first interface (619) with the electrolyte and the second electrode forms a second interface (629) with the electrolyte. The energy conversion and storage device further includes a photovoltaic component (520, 602) formed in a second region of the first material.
摘要翻译：能量转换和存储装置包括能量存储部件（530,601），其包括第一电极（611），该第一电极具有形成在第一材料（617）的第一区域（615）中的第一多个通道（612），第二电极电极（621），其与第一电极相邻但电隔离并且具有形成在第二材料（627）的第一区域（625）中的第二多个通道（622），以及在第一和第二电极多个频道第一电极与电解质形成第一界面（619），第二电极与电解质形成第二界面（629）。能量转换和存储装置还包括形成在第一材料的第二区域中的光伏组件（520,602）。

8. 发明申请

US20140233152A1 FABRICATION OF POROUS SILICON ELECTROCHEMICAL CAPACITORS 审中-公开
标题翻译：多孔硅电化学电容器的制造
公开(公告)号：US20140233152A1
公开(公告)日：2014-08-21
申请号：US13997881
申请日：2011-12-27
申请人： Donald S. Gardner , Cary L. Pint , Charles W. Holzwarth , Wei Jin , Zhaohui Chen , Yang Liu , Eric C. Hannah , John L. Gustafson
发明人： Donald S. Gardner , Cary L. Pint , Charles W. Holzwarth , Wei Jin , Zhaohui Chen , Yang Liu , Eric C. Hannah , John L. Gustafson
IPC分类号： H01G11/86 , H01G11/30 , H01G4/008
CPC分类号： H01G4/008 , H01G11/00 , H01G11/26 , H01G11/30 , H01G11/86 , Y02E60/13 , Y10T29/41
摘要： Methods of forming microelectronic structures are described. Embodiments of those methods may include forming an electrochemical capacitor device by forming pores in low-purity silicon materials. Various embodiments described herein enable the fabrication of high capacitive devices using low cost techniques.
摘要翻译：描述形成微电子结构的方法。这些方法的实施例可以包括通过在低纯度硅材料中形成孔而形成电化学电容器装置。本文描述的各种实施例能够使用低成本技术来制造高电容性器件。

9. 发明申请

US20140185260A1 NANOSTRUCTURED ELECTROLYTIC ENERGY STORAGE DEVICES 有权
标题翻译：纳米结构电解能储存装置
公开(公告)号：US20140185260A1
公开(公告)日：2014-07-03
申请号：US13730324
申请日：2012-12-28
申请人： Zhaohui Chen , Donald S. Gardner , Bum Ki Moon , Charles W. Holzwarth , Cary L. Pint , Scott B. Clendenning
发明人： Zhaohui Chen , Donald S. Gardner , Bum Ki Moon , Charles W. Holzwarth , Cary L. Pint , Scott B. Clendenning
IPC分类号： H05K1/18
CPC分类号： H01G11/24 , G11C13/0002 , G11C13/0016 , H01L28/82 , Y02E60/13 , Y10T29/435
摘要： In one embodiment, a structure for an energy storage device may include a first nanostructured substrate having a conductive layer and a dielectric layer formed on the conductive layer. A second nanostructured substrate includes another conductive layer. A separator separates the first and second nanostructured substrates and allows ions of an electrolyte to pass through the separator. The structure may be a nanostructured electrolytic capacitor with the first nanostructured substrate forming a positive electrode and the second nanostructured substrate forming a negative electrode of the capacitor.
摘要翻译：在一个实施例中，用于能量存储装置的结构可以包括具有形成在导电层上的导电层和介电层的第一纳米结构化衬底。第二纳米结构衬底包括另一导电层。分离器分离第一和第二纳米结构的基底并允许电解质的离子通过分离器。该结构可以是纳米结构的电解电容器，其中第一纳米结构的衬底形成正电极，第二纳米结构衬底形成电容器的负极。

10. 发明申请

US20130257410A1 LOW FREQUENCY CONVERTERS HAVING ELECTROCHEMICAL CAPACITORS 有权
标题翻译：具有电化学电容器的低频转换器
公开(公告)号：US20130257410A1
公开(公告)日：2013-10-03
申请号：US13853960
申请日：2013-03-29
申请人： Donald S. Gardner , Pavan Kumar
发明人： Donald S. Gardner , Pavan Kumar
IPC分类号： H01G11/04 , H02J7/00 , H01G11/56
CPC分类号： H01G11/56 , G06F1/04 , G06F1/324 , H01G11/04 , H01G11/08 , H02J7/00 , H02M3/07 , H02M7/537 , Y02E60/13
摘要： In one embodiment of the invention, a low frequency converter is described that includes a first electrochemical capacitor to charge to an input voltage and a second electrochemical capacitor that is coupled to the first electrochemical capacitor. The second electrochemical capacitor is associated with an output voltage of the low frequency converter. Each electrochemical capacitor may have a capacitance of at least one millifarad (mF) and a switching frequency that is less than one kilohertz.
摘要翻译：在本发明的一个实施例中，描述了一种低频转换器，其包括用于对输入电压充电的第一电化学电容器和耦合到第一电化学电容器的第二电化学电容器。第二电化学电容器与低频转换器的输出电压相关联。每个电化学电容器可以具有至少一毫安（mF）的电容和小于一千赫兹的开关频率。

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