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    • 1. 发明申请
    • Methods for writing and reading in a polarity-dependent memory switch media
    • 在极性相关的存储器交换介质中写入和读取的方法
    • US20070008866A1
    • 2007-01-11
    • US11178060
    • 2005-07-08
    • Donald AdamsZhaouhi FanYevgeny Anoikin
    • Donald AdamsZhaouhi FanYevgeny Anoikin
    • G11B9/00
    • G11B9/04G11B9/149
    • Systems in accordance with the present invention can include a tip contactable with a media, the media including a substrate, a conductive under-layer disposed over the substrate, and a polarity dependent memory switching media disposed over the under-layer. In an embodiment, the polarity dependent memory switching media is continuous and the media either grounded or electrically connected with a voltage source such that when the tip is placed in contact with the media and a forward voltage is applied to the tip, causing the polarity dependent memory switching media to form an Ag dendritic structure bridging the tip and the under-layer. The bridging causes a reduction in resistance corresponding to a “1” or a “0.” In an alternative embodiment, an insulating material can be disposed over the substrate such that a plurality of cells is formed, at least one of the cells including the polarity dependent memory switching media. The media is either grounded or electrically connected with a voltage source such that when the tip is placed in contact with the at least one cell and a forward voltage is applied to the tip, the polarity dependent memory switching media within the at least one cell forms an Ag dendritic structure bridging the tip and the under-layer. The bridging causes a reduction in resistance corresponding to a “1” or a “0.”
    • 根据本发明的系统可以包括可与介质接触的尖端,所述介质包括衬底,设置在衬底上的导电底层以及设置在底层上方的极性依赖存储器切换介质。 在一个实施例中,极性相关的存储器切换介质是连续的,并且介质与电压源接地或电连接,使得当尖端与介质接触并且正向电压被施加到尖端时,导致极性依赖 存储器切换介质以形成桥接尖端和底层的Ag树枝状结构。 桥接导致对应于“1”或“0”的电阻降低。 在替代实施例中,绝缘材料可以设置在衬底上,使得形成多个单元,至少一个单元包括极性相关的存储器切换介质。 介质与电压源接地或电连接,使得当尖端与至少一个单元接触并且向尖端施加正向电压时,至少一个单元内的极性相关存储器切换介质形成 桥接顶端和底层的Ag树枝状结构。 桥接导致对应于“1”或“0”的电阻降低。
    • 2. 发明申请
    • Media for writing highly resolved domains
    • 撰写高度解决的域的媒体
    • US20070041237A1
    • 2007-02-22
    • US11177550
    • 2005-07-08
    • Yevgeny AnoikinDonald AdamsZhaohui Fan
    • Yevgeny AnoikinDonald AdamsZhaohui Fan
    • G11C11/00
    • G11C13/02B82Y10/00G11B9/04G11B9/08G11B9/149G11C13/0004G11C23/00
    • Systems in accordance with the present invention can include a tip contactable with a media, the media including a phase change material in an embodiment (or polarity-dependent memory material or other memory material in other embodiments) disposed between a substrate and an overcoat. The overcoat is a co-deposited film having a conductive portion and a substantially non-conductive portion, the co-deposited film conducting current more efficiently through the overcoat than across the overcoat. The overcoat substantially directs the current so that a portion of the phase change material directly beneath the tip is heated to a sufficient temperature such that the structure of the material become disordered. The current is then removed from the phase change material, which is quickly cooled to form an domain having a resistivity larger than the crystalline bulk structure.
    • 根据本发明的系统可以包括与介质接触的尖端,所述介质包括设置在基底和外涂层之间的实施例中的相变材料(或其它实施例中的极性相关的记忆材料或其它记忆材料)。 外涂层是具有导电部分和基本上非导电部分的共沉积膜,共沉积膜通过外涂层比通过外涂层更有效地传导电流。 外涂层基本上引导电流,使得直接在尖端下方的相变材料的一部分被加热到足够的温度,使得材料的结构变得无序。 然后将电流从相变材料中去除,其被快速冷却以形成具有大于结晶体结构的电阻率的畴。
    • 3. 发明申请
    • High density data storage devices with a lubricant layer comprised of a field of polymer chains
    • 具有由聚合物链领域组成的润滑层的高密度数据存储装置
    • US20070008867A1
    • 2007-01-11
    • US11178061
    • 2005-07-08
    • Yevgeny AnoikinDonald Adams
    • Yevgeny AnoikinDonald Adams
    • G11B9/00
    • G11B9/149G11B9/04G11B9/065G11B9/08
    • Systems in accordance with the present invention can include a tip contactable with a media, the media including a phase change material disposed over a substrate, a lubricant layer disposed over the phase change material, and optionally an overcoat disposed between the phase change material and the lubricant layer. The lubricant layer can include polymer chains (also referred to herein as polymer fibers), the polymer chains being adapted to bond to one of the phase change material and an overcoat. Where an overcoat is used, the overcoat is a highly anisotropic material that conducts current more efficiently through the overcoat than across the overcoat. The media is either grounded or electrically connected with a voltage source such that when the tip is placed in contact with the media and a voltage is applied to the tip, a current is drawn through the media. The lubricant layer reduces wear on the tip by providing a movable surface that does not stick to the tip, but rather holds to the bonded surface.
    • 根据本发明的系统可以包括可与介质接触的末端,所述介质包括设置在基底上的相变材料,设置在所述相变材料上的润滑剂层,以及任选地设置在所述相变材料和所述相变材料之间的外涂层 润滑剂层。 润滑剂层可以包括聚合物链(本文也称为聚合物纤维),聚合物链适于结合至相变材料之一和外涂层。 在使用外涂层时,外涂层是高度各向异性的材料,其通过外涂层比通过外涂层更有效地传导电流。 介质与电压源接地或电连接,使得当尖端与介质接触并且向尖端施加电压时,电流通过介质被吸引。 润滑剂层通过提供不粘附到尖端的可移动表面而减少尖端的磨损,而是保持在粘合表面上。
    • 4. 发明申请
    • High density data storage devices with polarity-dependent memory switching media
    • 具有极性相关的存储器交换介质的高密度数据存储设备
    • US20070008865A1
    • 2007-01-11
    • US11177642
    • 2005-07-08
    • Donald AdamsZhaohui FanYevgeny Anoikin
    • Donald AdamsZhaohui FanYevgeny Anoikin
    • G11B9/00
    • G11B9/149G11B9/04
    • Systems in accordance with the present invention can include a tip contactable with a media, the media including a substrate, a conductive under-layer disposed over the substrate, and a polarity dependent memory switching media disposed over the under-layer. In an embodiment, the polarity dependent memory switching media is continuous and the media either grounded or electrically connected with a voltage source such that when the tip is placed in contact with the media and a forward voltage is applied to the tip, causing the polarity dependent memory switching media to form an Ag dendritic structure bridging the tip and the under-layer. The bridging causes a reduction in resistance corresponding to a “1” or a “0.” In an alternative embodiment, an insulating material can be disposed over the substrate such that a plurality of cells is formed, at least one of the cells including the polarity dependent memory switching media. The media is either grounded or electrically connected with a voltage source such that when the tip is placed in contact with the at least one cell and a forward voltage is applied to the tip, the polarity dependent memory switching media within the at least one cell forms an Ag dendritic structure bridging the tip and the under-layer. The bridging causes a reduction in resistance corresponding to a “1” or a “0.”
    • 根据本发明的系统可以包括可与介质接触的尖端,所述介质包括衬底,设置在衬底上的导电底层以及设置在底层上方的极性依赖存储器切换介质。 在一个实施例中,极性相关的存储器切换介质是连续的,并且介质与电压源接地或电连接,使得当尖端与介质接触并且正向电压被施加到尖端时,导致极性依赖 存储器切换介质以形成桥接尖端和底层的Ag树枝状结构。 桥接导致对应于“1”或“0”的电阻降低。 在替代实施例中,绝缘材料可以设置在衬底上,使得形成多个单元,至少一个单元包括极性依赖存储器切换介质。 介质与电压源接地或电连接,使得当尖端与至少一个单元接触并且向尖端施加正向电压时,至少一个单元内的极性相关存储器切换介质形成 桥接顶端和底层的Ag树枝状结构。 桥接导致对应于“1”或“0”的电阻降低。