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1. 发明申请

US20130269783A1 Semiconductor Material and Method of Production 有权
标题翻译：半导体材料和生产方法
公开(公告)号：US20130269783A1
公开(公告)日：2013-10-17
申请号：US13988302
申请日：2011-11-18
申请人： Dominik Berg , Alex Redinger , Phillip Dale , Susanne Siebentritt
发明人： Dominik Berg , Alex Redinger , Phillip Dale , Susanne Siebentritt
IPC分类号： H01L31/18
CPC分类号： H01L31/1864 , C23C14/0623 , C23C14/5866 , C25D5/10 , C25D5/50 , H01L31/0326 , Y02E10/50
摘要： A method of manufacturing (AgxCu1-x)2ZnSn(SySe1-y)4 thin films, the method comprising: providing a thin film comprising Ag and/or Cu, the thin film further comprising Zn; and annealing the thin film in an atmosphere comprising S and/or Se, and further comprising Sn.
摘要翻译：一种制造（AgxCu1-x）2ZnSn（SySe1-y）4薄膜的方法，所述方法包括：提供包含Ag和/或Cu的薄膜，所述薄膜还包含Zn; 以及在包含S和/或Se的气氛中退火所述薄膜，并且还包含Sn。

2. 发明授权

US09306111B2 Semiconductor material and method of production 有权
标题翻译：半导体材料及生产方法
公开(公告)号：US09306111B2
公开(公告)日：2016-04-05
申请号：US13988302
申请日：2011-11-18
申请人： Dominik Berg , Alex Redinger , Phillip Dale , Susanne Siebentritt
发明人： Dominik Berg , Alex Redinger , Phillip Dale , Susanne Siebentritt
IPC分类号： H01L21/00 , H01L31/00 , H01L31/18 , C23C14/06 , C23C14/58 , C25D5/10 , C25D5/50 , H01L31/032
CPC分类号： H01L31/1864 , C23C14/0623 , C23C14/5866 , C25D5/10 , C25D5/50 , H01L31/0326 , Y02E10/50
摘要： A method of manufacturing (AgxCu1-x)2ZnSn(SySe1-y)4 thin films, the method comprising: providing a thin film comprising Ag and/or Cu, the thin film further comprising Zn and annealing the thin film in an atmosphere comprising S and/or Se, and further comprising Sn.
摘要翻译：一种制造（AgxCu1-x）2ZnSn（SySe1-y）4薄膜的方法，所述方法包括：提供包含Ag和/或Cu的薄膜，所述薄膜还包含Zn，并在包含S的气氛中退火所述薄膜和/或Se，并且还包含Sn。

3. 发明授权

US09245810B2 Electrical and opto-electrical characterization of large-area semiconductor devices 有权
标题翻译：大面积半导体器件的电气和光电特性
公开(公告)号：US09245810B2
公开(公告)日：2016-01-26
申请号：US13266948
申请日：2010-04-27
申请人： Phillip Dale , Susanne Siebentritt
发明人： Phillip Dale , Susanne Siebentritt
IPC分类号： G01R31/02 , H01L21/66
CPC分类号： H01L22/14
摘要： The present invention relates to an electrical and/or opto-electrical characterisation method for testing large-area semiconductor devices in production, the method comprising the steps of providing a first electrode and placing it into electrical contact with a contact area of a conducting layer of a semiconductor device; providing a movable electrode assembly, comprising a container holding an electrolyte solution and at least a second electrode; immersing the second electrode into the electrolyte solution; positioning the electrode assembly such that the electrolyte solution places the second electrode into electrical contact with a top surface of the semiconductor device; and scanning the movable electrode assembly relative to the top surface of the semiconductor device while performing electrical measurements. It also relates to a corresponding electrical and/or opto-electrical characterisation device comprising a first electrode, a movable electrode assembly with a container holding an electrolyte solution and a second electrode immersed into it and scanning means.
摘要翻译：本发明涉及一种用于在生产中测试大面积半导体器件的电和/或光电表征方法，该方法包括以下步骤：提供第一电极并将其放置成与导电层的导电层的接触区域半导体器件; 提供可移动电极组件，包括容纳电解质溶液的容器和至少第二电极; 将第二电极浸入电解液中; 定位电极组件使得电解质溶液使第二电极与半导体器件的顶表面电接触; 以及在执行电测量时相对于半导体器件的顶表面扫描可动电极组件。它还涉及相应的电和/或光电表征装置，其包括第一电极，具有容纳电解质溶液的容器的可动电极组件和浸入其中的第二电极和扫描装置。

4. 发明申请

US20120139551A1 Electrical and opto-electrical characterization of large-area semiconductor devices 有权
标题翻译：大面积半导体器件的电气和光电特性
公开(公告)号：US20120139551A1
公开(公告)日：2012-06-07
申请号：US13266948
申请日：2010-04-27
申请人： Phillip Dale , Susanne Siebentritt
发明人： Phillip Dale , Susanne Siebentritt
IPC分类号： G01R31/26
CPC分类号： H01L22/14
摘要： The present invention relates to an electrical and/or opto-electrical characterisation method for testing large-area semiconductor devices in production, the method comprising the steps of providing a first electrode and placing it into electrical contact with a contact area of a conducting layer of a semiconductor device; providing a movable electrode assembly, comprising a container holding an electrolyte solution and at least a second electrode; immersing the second electrode into the electrolyte solution; positioning the electrode assembly such that the electrolyte solution places the second electrode into electrical contact with a top surface of the semiconductor device; and scanning the movable electrode assembly relative to the top surface of the semiconductor device while performing electrical measurements. It also relates to a corresponding electrical and/or opto-electrical characterisation device comprising a first electrode, a movable electrode assembly with a container holding an electrolyte solution and a second electrode immersed into it and scanning means.
摘要翻译：本发明涉及一种用于在生产中测试大面积半导体器件的电和/或光电表征方法，该方法包括以下步骤：提供第一电极并将其放置成与导电层的导电层的接触区域半导体器件; 提供可移动电极组件，包括容纳电解质溶液的容器和至少第二电极; 将第二电极浸入电解液中; 定位电极组件使得电解质溶液使第二电极与半导体器件的顶表面电接触; 以及在执行电测量时相对于半导体器件的顶表面扫描可动电极组件。它还涉及相应的电和/或光电表征装置，其包括第一电极，具有容纳电解质溶液的容器的可动电极组件和浸入其中的第二电极和扫描装置。

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