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1. 发明授权

US5211877A Liquid-crystalline polyorganosiloxanes containing (meth) acryloxy groups 失效
标题翻译：含有（甲基）丙烯酸树脂的液晶聚氨酯硅氧烷
公开(公告)号：US5211877A
公开(公告)日：1993-05-18
申请号：US401261
申请日：1989-08-31
申请人： Dirk Andrejewski , Magdi Gohary , Hans-Joachim Luckas , Rainer Winkler , Franz-Heinrich Kreuzer
发明人： Dirk Andrejewski , Magdi Gohary , Hans-Joachim Luckas , Rainer Winkler , Franz-Heinrich Kreuzer
IPC分类号： B01J20/283 , B01J20/281 , C07C69/88 , C07C69/90 , C07C69/92 , C07F7/18 , C07J9/00 , C08G77/06 , C08G77/38 , C08L83/04 , C08L83/07 , C09D7/00 , C09K19/40 , G01N30/88 , G02F1/13
CPC分类号： C09K19/408 , C08G77/38 , C09D7/007
摘要： The present invention relates to liquid-crystalline compounds and to a process for preparing liquid-crystalline polyorganosiloxanes having methacryloxy and/or acryloxy groups by the reaction of organosiloxanes having hydrogen atoms bonded directly to silicon atoms and/or organosilanes which can be condensed to form organosiloxanes having hydrogen atoms bonded directly to silicon atoms, with alkenes and/or alkynes having mesogenic groups, which comprises reacting in a first step the organosiloxanes with an alkene and/or alkyne having at least one non-enolic hydroxyl group protected by a protective group, and in a second step the protective group is removed and the hydroxyl group which is now free is esterified with (meth)acrylic acid, esters, anhydrides and/or halides thereof and thereafter optionally condensing the organosilanes to organosiloxanes.
摘要翻译：本发明涉及液晶化合物以及具有甲基丙烯酰氧基和/或丙烯酰氧基的液晶聚有机硅氧烷的方法，该有机硅氧烷具有直接键合在硅原子上的氢原子的有机硅氧烷和/或可以缩合形成有机硅氧烷的有机硅烷具有与硅原子直接键合的氢原子和具有介晶基团的烯烃和/或炔烃，其包括在第一步骤中使有机硅氧烷与具有被保护基保护的至少一个非烯醇羟基的烯烃和/或炔烃反应，并且在第二步中，除去保护基，并且现在游离的羟基用（甲基）丙烯酸，酯，酸酐和/或卤化物酯化，然后任选地将有机硅烷缩合成有机硅氧烷。

2. 发明授权

US5106530A Silylated benzoic acid derivatives 失效
标题翻译：苯乙烯酸衍生物
公开(公告)号：US5106530A
公开(公告)日：1992-04-21
申请号：US542477
申请日：1990-06-22
申请人： Wolfgang Haas , Norman Haberle , Rainer Winkler , Franz-Heinrich Kreuzer
发明人： Wolfgang Haas , Norman Haberle , Rainer Winkler , Franz-Heinrich Kreuzer
IPC分类号： G02F1/13 , C07F7/08 , C09K19/40
CPC分类号： C09K19/406 , C07F7/0818 , C07F7/0852 , C07F7/0896
摘要： The present invention relates to compounds of the formula ##STR1## in which Z is a halogen atom, a cyano group or a hydroxyl group,n is 0, 1 or 2,R' is a radical of the formulaR'"--[Si(R*).sub.2 ].sub.x (CH.sub.2).sub.y R""-- (9), in whichx is the number 0 or 1,y is an integer from 1 to 18,R'"is a defined in the description,R* is identical or different, optionally substituted C.sub.1 - to C.sub.18 -hydrocarbon or hydrocarbonoxy radicals,R"" is a phenylene or biphenylene radical or a radical of the formula --E--, whereE is a divalent radical of the formula --O-- or --[Si(R*).sub.2 ].sub.z --, andz is the number 0 or 1, and the compounds contain at least one group of the formula --Si(R*).sub.2 -- per molecule, and the radicalR" is a cholesteryl radical, a radical as defined for R* or a radical of the formula --C.sub.6 H.sub.4 --R*,and the preparation and use thereof.
摘要翻译：本发明涉及其中Z为卤素原子，氰基或羟基，n为0,1或2的式（8）的化合物，R'为式R“的基团， ' - [Si（R *）2] x（CH 2）y R“' - （9），其中x是数字0或1，y是1至18的整数，R” 在描述中，R *相同或不同，任选取代的C 1至C 18烃或烃氧基，R“”是亚苯基或亚联苯基或式-E-的基团，其中E是二价基团式（Ⅸ）或 - [Si（R *）2] z-，z是数字0或1，化合物每分子含有至少一个式-Si（R *）2的基团，并且基团R“是胆甾醇基团，如R *或式-C 6 H 4 -R *基团所定义的基团及其制备和用途。

3. 再颁专利

USRE35462E Silylated benzoic acid derivatives 失效
标题翻译：甲硅烷基化苯甲酸衍生物
公开(公告)号：USRE35462E
公开(公告)日：1997-02-25
申请号：US192515
申请日：1994-02-07
申请人： Wolfgang Haas , Norman Haberle , Rainer Winkler , Franz-Heinrich Kreuzer
发明人： Wolfgang Haas , Norman Haberle , Rainer Winkler , Franz-Heinrich Kreuzer
IPC分类号： G02F1/13 , C07F7/08 , C09K19/40 , C09K19/06 , C09K19/34 , C07F7/04
CPC分类号： C09K19/406 , C07F7/0818 , C07F7/0852 , C07F7/0896
摘要： The present invention relates to compounds of the formula ##STR1## in which Z is a halogen atom, a cyano group or a hydroxyl group,n is 0, 1 or 2,R' is a radical of the formulaR"'--[Si(R*).sub.2 ].sub.x (CH.sub.2).sub.y R""-- (9),in whichx is the number 0 or 1,y is an integer from 1 to 18,R"'is a defined in the description,R* is identical or different, optionally substituted C.sub.1 - to C.sub.18 -hydrocarbon or hydrocarbonoxy radicals,R"" is a phenylene or biphenylene radical or a radical of the formula --E--, whereE is a divalent radical of the formula --O-- or --[Si(R*).sub.2 ].sub.z --, andz is the number 0 or 1,and the compounds contain at least one group of the formula --Si(R*).sub.2 -- per molecule, and the radicalR" is a cholesteryl radical, a radical as defined for R* or a radical of the formula --C.sub.6 H.sub.4 --R*,and the preparation and use thereof.
摘要翻译：本发明涉及其中Z为卤素原子，氰基或羟基，n为0,1或2的式（8）的化合物，R'为式R“的基团， ' - [Si（R *）2] x（CH 2）y R“' - （9），其中x是数字0或1，y是1至18的整数，R” 在描述中，R *相同或不同，任选取代的C 1至C 18烃或烃氧基，R“”是亚苯基或亚联苯基或式-E-的基团，其中E是二价基团式（Ⅸ）或 - [Si（R *）2] z-，z是数字0或1，化合物每分子含有至少一个式-Si（R *）2的基团，并且基团R“是胆甾醇基团，如R *或式-C 6 H 4 -R *基团所定义的基团及其制备和用途。

4. 发明授权

US5277838A Silylated benzoic acid derivatives 失效
标题翻译：甲硅烷基化苯甲酸衍生物
公开(公告)号：US5277838A
公开(公告)日：1994-01-11
申请号：US802107
申请日：1991-12-04
申请人： Wolfgang Haas , Norman Haberle , Rainer Winkler , Franz-Heinrich Kreuzer
发明人： Wolfgang Haas , Norman Haberle , Rainer Winkler , Franz-Heinrich Kreuzer
IPC分类号： G02F1/13 , C07F7/08 , C09K19/40 , C09K19/52 , C09K19/20 , C09K19/30 , C07F7/04
CPC分类号： C09K19/406 , C07F7/0818 , C07F7/0852 , C07F7/0896
摘要： The invention relates to compounds of the formula ##STR1## in which R.sup.3 is a hydrogen atom or a radical of the formulaR.sup.1 --R.sup.5 --O--(CH.sub.2).sub.y --,in which R.sup.1 is a halogen atom, a hydroxyl group, a C.sub.1 - to C.sub.18 -alkoxy group, a C.sub.1 - to C.sub.18 -alkyl group or a cholesteryl radical, R.sup.5 is a phenylene or biphenylene radical which may be linked to a phenylene radical via the --OOC-- group or a phenylene radical linked the --OOC-- group, y is an integer of from 3 to 12, R.sup.2 is selected from the group consisting of a radical of the formulaR.sup.6 --R.sup.1 and R.sup.7 --SiCH.sub.3).sub.2 H,where R.sup.6 is a single chemical bond or a phenylene, biphenylene or cyclohexylene racial or a phenylene radical linked to the --OOC-- or --COO-- radical or a phenylene radical linked to a cyclohexyl radical through the --OOC-- group, R.sup.7 is a cyclohexylene, phenylene or biphenylene radical linked to a phenylene radical through the --OOC-- group, and the preparation and use of these compounds.
摘要翻译：本发明涉及式（VI）的化合物，其中R 3是氢原子或式R 1 -R 5 -O-（CH 2）y - 的基团，其中R 1是卤素原子，羟基，C 1 -C 18烷氧基，C 1至C 18烷基或胆甾醇基，R 5是可以经由-OOC-基团连接的亚苯基或亚苯基与亚苯基连接的亚苯基 -OOC-基，y为3〜12的整数，R2选自式R6-R1和R7-SiCH3的基团）2H，其中R6是单一化学键或亚苯基，亚联苯基或与OOC-或-COO-基团连接的亚环己基种族或亚苯基，或通过-OOC-基连接到环己基的亚苯基，R 7是通过该基团与亚苯基连接的亚环己基，亚苯基或亚联苯基 -OOC-基团，以及这些化合物的制备和使用。

5. 发明授权

US5158702A Silylated benzoic acid derivatives II 失效
标题翻译：苯乙烯酸衍生物II
公开(公告)号：US5158702A
公开(公告)日：1992-10-27
申请号：US542130
申请日：1990-06-22
申请人： Wolfgang Haas , Norman Haberle , Rainer Winkler , Franz-Heinrich Kreuzer
发明人： Wolfgang Haas , Norman Haberle , Rainer Winkler , Franz-Heinrich Kreuzer
IPC分类号： G02F1/13 , B01J31/22 , B01J31/30 , C07B61/00 , C07F7/08 , C09K19/40
CPC分类号： C07F7/0818 , C07F7/0852 , C07F7/0896 , C09K19/406
摘要： The present invention relates to compounds of the formula ##STR1## in which Z is a radical bonded to the benzene ring in the 2-, 3-, 5- or 6-position, namely a halogen atom, a cyano group or a hydroxyl group,n is 0, 1 or 2,R" is a radical of the formulaR'''--[Si(R*).sub.2 ](CH.sub.2).sub.y R""-- (9), in whichY is an integer from 4 to 18,R''' is as defined in the description,R* is identical or different, optionally substituted C.sub.1 - to C.sub.18 -hydrocarbon or hydrocarbonoxy radicals,R"" is a radical of the formula --(E).sub.z -- which is optionally bonded to the carboxy group via a phenylene or biphenylene radical, whereE is a divalent radical of the formula --O-- or --Si(R*).sub.2 --, andZ is the number 0 or 1, and the radicalR' is a halogen atom, a cyano radical, a cholesteryl radical, a radical as defined for R* or of the formula --C.sub.6 H.sub.4 --R**, andR** may have any meaning of R*, with the exception of an n-octyloxy or an n-decyloxy radical,and the preparation and use thereof.
摘要翻译：本发明涉及式（VIII）的化合物，其中Z是在2-，3-，5-或6-位上与苯环键合的基团，即卤素原子，氰基或羟基，n为0,1或2，R“为式R”' - [Si（R *）2]（CH 2）y R“' - （9）的基团，其中Y 是4至18的整数，R“如说明书中所定义，R *相同或不同，任选取代的C 1至C 18烃或烃氧基，R”'是下式的基团 - （E）z-，其任选地通过亚苯基或亚联苯基与羧基键合，其中E是式-O-或-Si（R *）2 - 的二价基团，Z是数字0或1 ，并且基团R'是卤素原子，氰基，胆甾醇基，如R *或式-C 6 H 4 -R **所定义的基团，R **可具有任何R *的含义，与正辛氧基或正癸氧基除外，其制备和用途。

6. 发明授权

US08449675B2 Semiconductor wafer with an epitaxially deposited layer, and process for producing the semiconductor wafer 有权
标题翻译：具有外延沉积层的半导体晶片，以及用于制造半导体晶片的工艺
公开(公告)号：US08449675B2
公开(公告)日：2013-05-28
申请号：US12180739
申请日：2008-07-28
申请人： Rupert Krautbauer , Gerhard Huettl , Andrej Lenz , Erwin-Peter Mayer , Rainer Winkler
发明人： Rupert Krautbauer , Gerhard Huettl , Andrej Lenz , Erwin-Peter Mayer , Rainer Winkler
IPC分类号： C30B21/02
CPC分类号： H01L29/36 , H01L29/0878
摘要： A semiconductor wafer is formed of a substrate wafer of single crystal silicon doped with dopant atoms of the n type or p type, with a front surface and a back surface, contains a layer deposited epitaxially on the front surface of the substrate wafer. The substrate wafer additionally includes an n++ or p++ doped layer, which extends from the front surface of the substrate wafer into the substrate wafer and has a defined thickness. The semiconductor wafer is produced by a process in which dopant atoms of the n type or p type are introduced into the substrate wafer through the front surface of the substrate wafer, the dopant concentration in a layer which extends from the front surface of the substrate wafer into the substrate wafer being increased from the level n+ or p+ to the level n++ or p++, and an epitaxial layer is then deposited on this layer.
摘要翻译：半导体晶片由掺杂有n型或p型掺杂剂原子的单晶硅的衬底晶片形成，其前表面和后表面包含在衬底晶片的前表面上外延沉积的层。衬底晶片另外包括从衬底晶片的前表面延伸到衬底晶片中并具有限定厚度的n ++或p ++掺杂层。半导体晶片通过其中n型或p型的掺杂剂原子通过衬底晶片的前表面引入衬底晶片的方法制造，从衬底晶片的前表面延伸的层中的掺杂剂浓度衬底晶片从n +或p +级增加到n ++或p ++级，然后在该层上沉积外延层。

7. 发明授权

US09777662B2 Method and device for operating a fuel delivery device of an internal combustion engine 有权
公开(公告)号：US09777662B2
公开(公告)日：2017-10-03
申请号：US14128599
申请日：2012-05-02
申请人： Uwe Richter , Burkhard Hiller , Joerg Kuempel , Rainer Winkler , Heiko Roth
发明人： Uwe Richter , Burkhard Hiller , Joerg Kuempel , Rainer Winkler , Heiko Roth
IPC分类号： F02M51/00 , F02D41/30 , F02D41/38
CPC分类号： F02D41/30 , F02D41/3845
摘要： A method for operating a fuel delivery device of an internal combustion engine includes switching an electromagnetic actuating device of a volume control valve so as to set a delivery volume. An intensity of an energy that is supplied to the electromagnetic actuating device for switching purposes, in particular of a current supplied to the electromagnetic actuating device and/or a level of a voltage applied to the electromagnetic actuating device, depends at least intermittently on a rotational speed of the internal combustion engine.

8. 发明申请

US20140311456A1 Method and Device for Operating a Fuel Delivery Device of an Internal Combustion Engine 有权
标题翻译：用于操作内燃机燃油输送装置的方法和装置
公开(公告)号：US20140311456A1
公开(公告)日：2014-10-23
申请号：US14128599
申请日：2012-05-02
申请人： Uwe Richter , Burkhard Hiller , Joerg Kuempel , Rainer Winkler , Heiko Roth
发明人： Uwe Richter , Burkhard Hiller , Joerg Kuempel , Rainer Winkler , Heiko Roth
IPC分类号： F02D41/30
CPC分类号： F02D41/30 , F02D41/3845
摘要： The disclosure relates to a method for operating a fuel delivery device of an internal combustion engine, in which method an electromagnetic actuating device of a volume control valve is switched such as to set a delivery volume, wherein an intensity of an energy that is supplied to the electromagnetic actuating device for switching purposes, in particular of a current supplied to the electromagnetic actuating device and/or a level of a voltage applied to the electromagnetic actuating device, depends at least intermittently on a rotational speed of the internal combustion engine.
摘要翻译：本公开涉及一种用于操作内燃机的燃料输送装置的方法，其中切换容积控制阀的电磁致动装置以设定输送量，其中供给的能量的强度用于切换目的的电磁致动装置，特别是提供给电磁致动装置的电流和/或施加到电磁致动装置的电压的水平至少间歇性地依赖于内燃机的旋转速度。

9. 发明授权

US08647968B2 Method for producing a semiconductor layer 有权
公开(公告)号：US08647968B2
公开(公告)日：2014-02-11
申请号：US12482101
申请日：2009-06-10
申请人： Hans-Joachim Schulze , Helmut Strack , Hans-Joerg Timme , Rainer Winkler
发明人： Hans-Joachim Schulze , Helmut Strack , Hans-Joerg Timme , Rainer Winkler
IPC分类号： H01L21/20
CPC分类号： H01L29/04 , C30B25/18 , C30B29/06 , C30B33/02 , H01L21/02381 , H01L21/02529 , H01L21/02532 , H01L21/02543 , H01L21/02546 , H01L21/02658 , H01L21/263 , H01L21/3225 , H01L29/0657
摘要： A method for producing a semiconductor layer is disclosed. One embodiment provides for a semiconductor layer on a semiconductor substrate containing oxygen. Crystal defects are produced at least in a near-surface region of the semiconductor substrate. A thermal process is carried out wherein the oxygen is taken up at the crystal defects. The semiconductor layer is deposited epitaxially over the near-surface region of the semiconductor substrate.

10. 发明申请

US20080286951A1 Semiconductor Wafer With An Epitaxially Deposited Layer, And Process For Producing The Semiconductor Wafer 有权
标题翻译：具有外延沉积层的半导体晶片，以及用于生产半导体晶片的工艺
公开(公告)号：US20080286951A1
公开(公告)日：2008-11-20
申请号：US12180739
申请日：2008-07-28
申请人： Rupert Krautbauer , Gerhard Huettl , Andrej Lenz , Erwin-Peter Mayer , Rainer Winkler
发明人： Rupert Krautbauer , Gerhard Huettl , Andrej Lenz , Erwin-Peter Mayer , Rainer Winkler
IPC分类号： H01L21/20
CPC分类号： H01L29/36 , H01L29/0878
摘要： A semiconductor wafer is formed of a substrate wafer of single crystal silicon doped with dopant atoms of the n type or p type, with a front surface and a back surface, contains a layer deposited epitaxially on the front surface of the substrate wafer. The substrate wafer additionally includes an n++ or p++ doped layer, which extends from the front surface of the substrate wafer into the substrate wafer and has a defined thickness. The semiconductor wafer is produced by a process in which dopant atoms of the n type or p type are introduced into the substrate wafer through the front surface of the substrate wafer, the dopant concentration in a layer which extends from the front surface of the substrate wafer into the substrate wafer being increased from the level n+ or p+ to the level n++ or p++, and an epitaxial layer is then deposited on this layer.
摘要翻译：半导体晶片由掺杂有n型或p型掺杂剂原子的单晶硅的衬底晶片形成，其前表面和后表面包含在衬底晶片的前表面上外延沉积的层。衬底晶片还包括从衬底晶片的前表面延伸到衬底晶片中并具有限定厚度的n + ++或p +++掺杂层。半导体晶片通过其中n型或p型的掺杂剂原子通过衬底晶片的前表面引入衬底晶片的方法制造，从衬底晶片的前表面延伸的层中的掺杂剂浓度从衬底晶片的水平增加到第n + +或/或P + +或/ SUP>，然后在该层上沉积外延层。

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