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1. 发明申请

US20060145291A1 Structure and programming of laser fuse 有权
标题翻译：激光熔丝的结构和编程
公开(公告)号：US20060145291A1
公开(公告)日：2006-07-06
申请号：US11362680
申请日：2006-02-27
申请人： Dinesh Badami , Tom Lee , Baozhen Li , Gerald Matusiewicz , William Motsiff , Christopher Muzzy , Kimball Watson , Jean Wynne
发明人： Dinesh Badami , Tom Lee , Baozhen Li , Gerald Matusiewicz , William Motsiff , Christopher Muzzy , Kimball Watson , Jean Wynne
IPC分类号： H01L29/00
CPC分类号： H01L23/5258 , H01L23/525 , H01L23/5254 , H01L2924/0002 , H01L2924/00
摘要： A method and structure for fabricating a laser fuse and a method for programming the laser fuse. The laser fuse includes a dielectric layer having two vias filled with a first self-passivated electrically conducting material. A fuse link is on top of the dielectric layer. The fuse link electrically connects the two vias and includes a second material having a characteristic of changing its electrical resistance after being exposed to a laser beam. Two mesas are over the fuse link and directly over the two vias. The two mesas each include a third self-passivated electrically conducting material. The laser fuse is programmed by directing a laser beam to the fuse link. The laser beam is controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off. Such electrical resistance change is sensed and converted to digital signal.
摘要翻译：用于制造激光熔丝的方法和结构以及用于编程激光熔丝的方法。激光熔丝包括具有填充有第一自钝化导电材料的两个通孔的电介质层。熔丝连接在电介质层的顶部。熔断体将两个通孔电连接并且包括具有在暴露于激光束之后改变其电阻的特性的第二材料。两个台面位于熔丝链上方，直接穿过两个通孔。两个台面各自包括第三自钝化导电材料。激光熔丝通过将激光束引导到熔丝链来编程。控制激光束，使得响应于激光束对熔丝链的影响，熔丝链的电阻改变，但熔丝链不会被吹掉。这种电阻变化被检测并转换成数字信号。

2. 发明申请

US20050093091A1 STRUCTURE AND PROGRAMMING OF LASER FUSE 有权
标题翻译：激光熔丝的结构与编程
公开(公告)号：US20050093091A1
公开(公告)日：2005-05-05
申请号：US10605885
申请日：2003-11-04
申请人： Dinesh Badami , Tom Lee , Baozhen Li , Gerald Matusiewicz , William Motsiff , Christopher Muzzy , Kimball Watson , Jean Wynne
发明人： Dinesh Badami , Tom Lee , Baozhen Li , Gerald Matusiewicz , William Motsiff , Christopher Muzzy , Kimball Watson , Jean Wynne
IPC分类号： H01L23/525 , H01L29/00
CPC分类号： H01L23/5258 , H01L23/525 , H01L23/5254 , H01L2924/0002 , H01L2924/00
摘要： A method and structure for fabricating a laser fuse and a method for programming the laser fuse. The laser fuse includes a first dielectric layer having two vias filled with a first self-passivated electrically conducting material. A fuse link is on top of the first dielectric layer. The fuse link electrically connects the two vias and includes a second material having a characteristic of changing its electrical resistance after being exposed to a laser beam. Two mesas are over the fuse link and directly over the two vias. The two mesas each include a third self-passivated electrically conducting material. The laser fuse is programmed by directing a laser beam to the fuse link. The laser beam is controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off. Such electrical resistance change is sensed and converted to digital signal.
摘要翻译：用于制造激光熔丝的方法和结构以及用于编程激光熔丝的方法。激光熔丝包括具有填充有第一自钝化导电材料的两个通孔的第一介电层。熔丝连接在第一电介质层的顶部。熔断体将两个通孔电连接并且包括具有在暴露于激光束之后改变其电阻的特性的第二材料。两个台面位于熔丝链上方，直接穿过两个通孔。两个台面各自包括第三自钝化导电材料。激光熔丝通过将激光束引导到熔丝链来编程。控制激光束，使得响应于激光束对熔丝链的影响，熔丝链的电阻改变，但熔丝链不会被吹掉。这种电阻变化被检测并转换成数字信号。

3. 发明授权

US07064409B2 Structure and programming of laser fuse 有权
标题翻译：激光熔丝的结构和编程
公开(公告)号：US07064409B2
公开(公告)日：2006-06-20
申请号：US10605885
申请日：2003-11-04
申请人： Dinesh A. Badami , Tom C. Lee , Baozhen Li , Gerald Matusiewicz , William T. Motsiff , Christopher D. Muzzy , Kimball M. Watson , Jean E. Wynne
发明人： Dinesh A. Badami , Tom C. Lee , Baozhen Li , Gerald Matusiewicz , William T. Motsiff , Christopher D. Muzzy , Kimball M. Watson , Jean E. Wynne
IPC分类号： H01L29/00
CPC分类号： H01L23/5258 , H01L23/525 , H01L23/5254 , H01L2924/0002 , H01L2924/00
摘要： A method and structure for fabricating a laser fuse and a method for programming the laser fuse. The laser fuse includes a first dielectric layer having two vias filled with a first self-passivated electrically conducting material. A fuse link is on top of the first dielectric layer. The fuse link electrically connects the two vias and includes a second material having a characteristic of changing its electrical resistance after being exposed to a laser beam. Two mesas are over the fuse link and directly over the two vias. The two mesas each include a third self-passivated electrically conducting material. The laser fuse is programmed by directing a laser beam to the fuse link. The laser beam is controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off. Such electrical resistance change is sensed and converted to digital signal.
摘要翻译：用于制造激光熔丝的方法和结构以及用于编程激光熔丝的方法。激光熔丝包括具有填充有第一自钝化导电材料的两个通孔的第一介电层。熔丝连接在第一电介质层的顶部。熔断体将两个通孔电连接并且包括具有在暴露于激光束之后改变其电阻的特性的第二材料。两个台面位于熔丝链上方，直接穿过两个通孔。两个台面各自包括第三自钝化导电材料。激光熔丝通过将激光束引导到熔丝链来编程。控制激光束，使得响应于激光束对熔丝链的影响，熔丝链的电阻改变，但熔丝链不会被吹掉。这种电阻变化被检测并转换成数字信号。

4. 发明授权

US07384824B2 Structure and programming of laser fuse 有权
标题翻译：激光熔丝的结构和编程
公开(公告)号：US07384824B2
公开(公告)日：2008-06-10
申请号：US11362680
申请日：2006-02-27
申请人： Dinesh A. Badami , Tom C. Lee , Baozhen Li , Gerald Matusiewicz , William T. Motsiff , Christopher D. Muzzy , Kimball M. Watson , Jean E. Wynne
发明人： Dinesh A. Badami , Tom C. Lee , Baozhen Li , Gerald Matusiewicz , William T. Motsiff , Christopher D. Muzzy , Kimball M. Watson , Jean E. Wynne
IPC分类号： H01L21/82 , H01L29/00
CPC分类号： H01L23/5258 , H01L23/525 , H01L23/5254 , H01L2924/0002 , H01L2924/00
摘要： A method and structure for fabricating a laser fuse and a method for programming the laser fuse. The laser fuse includes a dielectric layer having two vias filled with a first self-passivated electrically conducting material. A fuse link is on top of the dielectric layer. The fuse link electrically connects the two vias and includes a second material having a characteristic of changing its electrical resistance after being exposed to a laser beam. Two mesas are over the fuse link and directly over the two vias. The two mesas each include a third self-passivated electrically conducting material. The laser fuse is programmed by directing a laser beam to the fuse link. The laser beam is controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off. Such electrical resistance change is sensed and converted to digital signal.
摘要翻译：用于制造激光熔丝的方法和结构以及用于编程激光熔丝的方法。激光熔丝包括具有填充有第一自钝化导电材料的两个通孔的电介质层。熔丝连接在电介质层的顶部。熔断体将两个通孔电连接并且包括具有在暴露于激光束之后改变其电阻的特性的第二材料。两个台面位于熔丝链上方，直接穿过两个通孔。两个台面各自包括第三自钝化导电材料。激光熔丝通过将激光束引导到熔丝链来编程。控制激光束，使得响应于激光束对熔丝链的影响，熔丝链的电阻改变，但熔丝链不会被吹掉。这种电阻变化被检测并转换成数字信号。

5. 发明授权

US07981732B2 Programming of laser fuse 有权
标题翻译：激光保险丝编程
公开(公告)号：US07981732B2
公开(公告)日：2011-07-19
申请号：US12105366
申请日：2008-04-18
申请人： Dinesh A. Badami , Tom C. Lee , Baozhen Li , Gerald Matusiewicz , William T. Motsiff , Christopher D. Muzzy , Kimball M. Watson , Jean E. Wynne
发明人： Dinesh A. Badami , Tom C. Lee , Baozhen Li , Gerald Matusiewicz , William T. Motsiff , Christopher D. Muzzy , Kimball M. Watson , Jean E. Wynne
IPC分类号： H01L21/268
CPC分类号： H01L23/5258 , H01L23/525 , H01L23/5254 , H01L2924/0002 , H01L2924/00
摘要： A method for programming a laser fuse. The laser fuse has a fuse link including a material having a characteristic of changing its electrical resistance after being exposed to a laser beam. The laser beam is directed to the fuse link, the laser beam being controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off.
摘要翻译：激光熔丝编程方法。激光熔丝具有包括具有在暴露于激光束之后改变其电阻的特性的材料的熔断体。激光束被引导到熔丝链，激光束被控制，使得响应于激光束对熔丝链的冲击，熔丝链的电阻改变，但是熔丝链不会被吹掉。

6. 发明申请

US20080194064A1 PROGRAMMING OF LASER FUSE 有权
标题翻译：激光熔丝的编程
公开(公告)号：US20080194064A1
公开(公告)日：2008-08-14
申请号：US12105366
申请日：2008-04-18
申请人： Dinesh A. Badami , Tom C. Lee , Baozhen Li , Gerald Matusiewicz , William T. Motsiff , Christopher D. Muzzy , Kimball M. Watson , Jean E. Wynne
发明人： Dinesh A. Badami , Tom C. Lee , Baozhen Li , Gerald Matusiewicz , William T. Motsiff , Christopher D. Muzzy , Kimball M. Watson , Jean E. Wynne
IPC分类号： H01L21/268
CPC分类号： H01L23/5258 , H01L23/525 , H01L23/5254 , H01L2924/0002 , H01L2924/00
摘要： A method for programming a laser fuse. The laser fuse has a fuse link including a material having a characteristic of changing its electrical resistance after being exposed to a laser beam. The laser beam is directed to the fuse link, the laser beam being controlled such that, in response to the impact of the laser beam upon the fuse link, the electrical resistance of the fuse link changes but the fuse link is not blown off.
摘要翻译：激光熔丝编程方法。激光熔丝具有包括具有在暴露于激光束之后改变其电阻的特性的材料的熔断体。激光束被引导到熔丝链，激光束被控制，使得响应于激光束对熔丝链的冲击，熔丝链的电阻改变，但是熔丝链不会被吹掉。

7. 发明申请

US20060231945A1 HEAT DISSIPATION FOR HEAT GENERATING ELEMENT OF SEMICONDUCTOR DEVICE AND RELATED METHOD 有权
标题翻译：用于半导体器件的发热元件的散热及相关方法
公开(公告)号：US20060231945A1
公开(公告)日：2006-10-19
申请号：US10907873
申请日：2005-04-19
申请人： Anil Chinthakindi , Lawrence Clevenger , Tom Lee , Gerald Matusiewicz , Conal Murray , Chih-Chao Yang
发明人： Anil Chinthakindi , Lawrence Clevenger , Tom Lee , Gerald Matusiewicz , Conal Murray , Chih-Chao Yang
IPC分类号： H01L23/34
CPC分类号： H01L23/5228 , H01L23/3677 , H01L2924/0002 , H01L2924/00
摘要： A structure and method are disclosed for heat dissipation relative to a heat generating element in a semiconductor device. The structure includes a plurality of heat transmitting lines partially vertically coincidental with the heat generating element, and at least one interconnecting path from each heat transmitting line to a substrate of the semiconductor device. In one embodiment, the heat generating element includes a resistor in a non-first metal level. The invention is compatible with conventional BEOL interconnect schemes, minimizes the amount of heat transfer from the resistor to the surrounding interconnect wiring, thus eliminating the loss of current carrying capability in the wiring.
摘要翻译：公开了相对于半导体器件中的发热元件的散热的结构和方法。该结构包括多个与发热元件垂直一致的传热线，以及从每个传热线到半导体器件的基板的至少一个互连路径。在一个实施例中，发热元件包括非第一金属水平的电阻器。本发明与传统的BEOL互连方案兼容，使得从电阻器到周围互连布线的传热量最小化，从而消除了布线中的载流能力的损失。

8. 发明授权

US08766257B2 Test pad structure for reuse of interconnect level masks 有权
标题翻译：测试焊盘结构，用于互连级别掩模的重用
公开(公告)号：US08766257B2
公开(公告)日：2014-07-01
申请号：US13607674
申请日：2012-09-08
申请人： Gerald Matusiewicz
发明人： Gerald Matusiewicz
IPC分类号： H01L23/544 , H01L21/768
CPC分类号： G03F1/44 , G03F1/00 , G03F1/14 , H01L22/34
摘要： A test pad structure in a back-end-of-line metal interconnect structure is formed by repeated use of the same mask set, which includes a first line level mask, a first via level mask, a second line level mask, and a second via level mask. The test pad structure includes a two-dimensional array of test pads such that a first row is connected to a device macro structure in the same level, and test pads in another row are electrically connected to another device macro structure of the same design at an underlying level. The lateral shifting of electrical connection among pads located at different levels is enabled by lateral extension portions that protrude from pads and via structures that contact the lateral extension portions. This test pad structure includes more levels of testable metal interconnect structure than the number of used lithographic masks.
摘要翻译：通过重复使用包括第一线路电平掩模，第一通路电平掩模，第二线路电平掩模和第二线路电平掩模的相同掩模组来形成后端行金属互连结构中的测试焊盘结构通过电平面罩。测试焊盘结构包括测试焊盘的二维阵列，使得第一行连接到相同电平的器件宏观结构，并且另一行中的测试焊盘与相同设计的另一器件宏观结构电连接基础水平。位于不同级别的焊盘之间的电连接的横向移位由通过接触横向延伸部分的焊盘和通孔结构突出的横向延伸部分实现。该测试焊盘结构包括比所使用的光刻掩模的数量更多的可测试的金属互连结构。

9. 发明申请

US20090035588A1 SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING SAME 有权
标题翻译：半导体结构及其制造方法
公开(公告)号：US20090035588A1
公开(公告)日：2009-02-05
申请号：US11831005
申请日：2007-07-31
申请人： Wai-Kin Li , Yi-Hsiung Lin , Gerald Matusiewicz
发明人： Wai-Kin Li , Yi-Hsiung Lin , Gerald Matusiewicz
IPC分类号： B32B15/04 , H01L21/44
CPC分类号： H01L23/5226 , H01L21/76808 , H01L23/5283 , H01L2924/0002 , H01L2924/12044 , Y10T428/31678 , H01L2924/00
摘要： A semiconductor structure and method of manufacturing the semiconductor structure, and more particularly to a semiconductor structure having reduced metal line resistance and a method of manufacturing the same in back end of line (BEOL) processes. The method includes forming a first trench extending to a lower metal layer Mx+1 and forming a second trench remote from the first trench. The method further includes filling the first trench and the second trench with conductive material. The conductive material in the second trench forms a vertical wiring line extending orthogonally and in electrical contact with an upper wiring layer and electrically isolated from lower metal layers including the lower metal layer Mx+1. The vertical wiring line decreases a resistance of a structure.
摘要翻译：半导体结构和半导体结构的制造方法，更具体地说，涉及具有降低的金属线电阻的半导体结构及其后端（BEOL）工艺的制造方法。该方法包括形成延伸到下金属层Mx + 1并形成远离第一沟槽的第二沟槽的第一沟槽。该方法还包括用导电材料填充第一沟槽和第二沟槽。第二沟槽中的导电材料形成垂直布线，其垂直布线并与上布线层电接触并与包括下金属层Mx + 1的下金属层电隔离。垂直布线减小了结构的电阻。

10. 发明授权

US08357932B2 Test pad structure for reuse of interconnect level masks 有权
标题翻译：测试焊盘结构，用于互连级别掩模的重用
公开(公告)号：US08357932B2
公开(公告)日：2013-01-22
申请号：US12731469
申请日：2010-03-25
申请人： Gerald Matusiewicz
发明人： Gerald Matusiewicz
IPC分类号： H01L23/544
CPC分类号： G03F1/44 , G03F1/00 , G03F1/14 , H01L22/34
摘要： A test pad structure in a back-end-of-line metal interconnect structure is formed by repeated use of the same mask set, which includes a first line level mask, a first via level mask, a second line level mask, and a second via level mask. The test pad structure includes a two-dimensional array of test pads such that a first row is connected to a device macro structure in the same level, and test pads in another row are electrically connected to another device macro structure of the same design at an underlying level. The lateral shifting of electrical connection among pads located at different levels is enabled by lateral extension portions that protrude from pads and via structures that contact the lateral extension portions. This test pad structure includes more levels of testable metal interconnect structure than the number of used lithographic masks.
摘要翻译：通过重复使用包括第一线路电平掩模，第一通路电平掩模，第二线路电平掩模和第二线路电平掩模的相同掩模组来形成后端行金属互连结构中的测试焊盘结构通过电平面罩。测试焊盘结构包括测试焊盘的二维阵列，使得第一行连接到相同电平的器件宏观结构，并且另一行中的测试焊盘与相同设计的另一器件宏观结构电连接基础水平。位于不同级别的焊盘之间的电连接的横向移位由通过接触横向延伸部分的焊盘和通孔结构突出的横向延伸部分实现。该测试焊盘结构包括比所使用的光刻掩模的数量更多的可测试的金属互连结构。

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