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1. 发明授权

US08882826B2 Intravascular stent 有权
标题翻译：血管内支架
公开(公告)号：US08882826B2
公开(公告)日：2014-11-11
申请号：US11841291
申请日：2007-08-20
申请人： Diem Uyen Ta , David Chi , Svava Maria Atladottir , Bjorn Svensson
发明人： Diem Uyen Ta , David Chi , Svava Maria Atladottir , Bjorn Svensson
IPC分类号： A61F2/06 , A61F2/915 , A61F2/91
CPC分类号： A61F2/82 , A61F2/91 , A61F2/915 , A61F2002/91508 , A61F2002/91525 , A61F2002/91558 , A61F2002/91575 , A61F2230/0013 , A61F2250/0029
摘要： An expandable stent for implanting in a body lumen, such as a coronary artery, peripheral artery, or other body lumen. In one aspect, the stent includes a butterfly pattern to which connecting links are attached. In another aspect, the stent embodies a non-directional structure. One embodiment is a stent in which one or both ends are more flexible than the center portion. Also, the stent may have a non-uniform drug coating. Another embodiment relates to a stent having ends that are more radiopaque than the center portion.
摘要翻译：用于植入体腔（例如冠状动脉，外周动脉或其他体腔）的可扩张支架。在一个方面，支架包括连接连接件的蝶形图案。另一方面，支架体现了非方向性结构。一个实施例是其中一端或两端比中心部分更柔性的支架。此外，支架可能具有不均匀的药物涂层。另一实施例涉及具有比中心部分更不透射线的端部的支架。

2. 发明申请

US20080051876A1 INTRAVASCULAR STENT 有权
标题翻译：血管内静脉
公开(公告)号：US20080051876A1
公开(公告)日：2008-02-28
申请号：US11841291
申请日：2007-08-20
申请人： Diem Uyen Ta , David Chi , Svava Maria Atladottir , Bjorn Svensson
发明人： Diem Uyen Ta , David Chi , Svava Maria Atladottir , Bjorn Svensson
IPC分类号： A61F2/82
CPC分类号： A61F2/82 , A61F2/91 , A61F2/915 , A61F2002/91508 , A61F2002/91525 , A61F2002/91558 , A61F2002/91575 , A61F2230/0013 , A61F2250/0029
摘要： An expandable stent for implanting in a body lumen, such as a coronary artery, peripheral artery, or other body lumen. In one aspect, the stent includes a butterfly pattern to which connecting links are attached. In another aspect, the stent embodies a non-directional structure. One embodiment is a stent in which one or both ends are more flexible than the center portion. Also, the stent may have a non-uniform drug coating. Another embodiment relates to a stent having ends that are more radiopaque than the center portion.
摘要翻译：用于植入体腔（例如冠状动脉，外周动脉或其他体腔）的可扩张支架。在一个方面，支架包括连接连接件的蝶形图案。另一方面，支架体现了非方向性结构。一个实施例是其中一端或两端比中心部分更柔性的支架。此外，支架可能具有不均匀的药物涂层。另一实施例涉及具有比中心部分更不透射线的端部的支架。

3. 发明授权

US6162684A Ammonia annealed and wet oxidized LPCVD oxide to replace ono films for high integrated flash memory devices 失效
标题翻译：氨退火和湿氧化LPCVD氧化物以替代用于高集成闪存器件的膜
公开(公告)号：US6162684A
公开(公告)日：2000-12-19
申请号：US266714
申请日：1999-03-11
申请人： Kent Kuohua Chang , David Chi , Chin-Yang Sun
发明人： Kent Kuohua Chang , David Chi , Chin-Yang Sun
IPC分类号： H01L21/28 , H01L21/314 , H01L29/51 , H01L21/336
CPC分类号： H01L21/28202 , H01L21/28211 , H01L21/28273 , H01L21/3144 , H01L29/511 , H01L29/518
摘要： In one embodiment, the present invention relates to a method of forming a flash memory cell, involving the steps of forming a tunnel oxide on a substrate; forming a first polysilicon layer over the tunnel oxide; forming an insulating layer over the first polysilicon layer, the insulating layer comprising an oxide layer made by low pressure chemical vapor deposition at a temperature from about 600.degree. C. to about 850.degree. C. using SiH.sub.4 and N.sub.2 O, annealing in an NH.sub.3 atmosphere at a temperature from about 800.degree. C. to about 900.degree. C., and wet oxidizing using O.sub.2 and H.sub.2 at a temperature from about 820.degree. C. to about 880.degree. C.; forming a second polysilicon layer over the insulating layer; etching at least the first polysilicon layer, the second polysilicon layer and the insulating layer, thereby defining at least one stacked gate structure; and forming a source region and a drain region in the substrate, thereby forming at least one memory cell.
摘要翻译：在一个实施例中，本发明涉及一种形成闪速存储器单元的方法，包括在衬底上形成隧道氧化物的步骤; 在隧道氧化物上形成第一多晶硅层; 在所述第一多晶硅层上形成绝缘层，所述绝缘层包括通过使用SiH 4和N 2 O在约600℃至约850℃的温度下由低压化学气相沉积制成的氧化物层，在NH 3气氛中退火温度为约800℃至约900℃，并在约820℃至约880℃的温度下使用O 2和H 2进行湿氧化。在所述绝缘层上形成第二多晶硅层; 至少蚀刻第一多晶硅层，第二多晶硅层和绝缘层，从而限定至少一个堆叠栅极结构; 以及在衬底中形成源区和漏区，由此形成至少一个存储单元。

4. 发明授权

US6114230A Nitrogen ion implanted amorphous silicon to produce oxidation resistant and finer grain polysilicon based floating gates 失效
标题翻译：氮离子注入的非晶硅，以产生抗氧化和更细晶粒多晶硅的浮栅
公开(公告)号：US6114230A
公开(公告)日：2000-09-05
申请号：US993443
申请日：1997-12-18
申请人： Kent Kuohua Chang , Yuesong He , David Chi
发明人： Kent Kuohua Chang , Yuesong He , David Chi
IPC分类号： H01L21/28 , H01L29/423 , H01L29/51 , H01L21/3205 , H01L21/44
CPC分类号： H01L21/28273 , H01L29/42324 , H01L29/511
摘要： A polysilicon-based floating gate is formed so as to be resistant to oxidation that occurs during multiple thermo-cycles in fabrication. Accordingly, edge erase times in NOR-type memory devices may be minimized. Additionally, manufacture of oxidation resistant floating gates reduces variations in edge erase times among multiple NOR-type memory devices. A layer of amorphous silicon is deposited over a silicon substrate by directing a mixture of silane and a phosphene-helium gas mixture at the surface of the silicon substrate. Later, N+ ions are implanted into the amorphous silicon. The amorphous silicon layer is then etched so as to overlap slightly with regions that will later correspond to the source and drain regions. Next, a lower oxide layer of an ONO dielectric is deposited and the device is heated. A thermo-cycle is eliminated by heating the amorphous silicon during formation of the oxide layer rather than immediately following its deposition. Later, the nitride and oxide layers of the ONO dielectric, a second polysilicon layer, a tungsten silicide layer, and SiON layers are successively formed.
摘要翻译：形成基于多晶硅的浮栅，以便在制造中的多个热循环期间耐氧化。因此，NOR型存储器件中的边沿擦除时间可以最小化。此外，抗氧化浮动栅极的制造减少了多个NOR型存储器件之间的边缘擦除时间的变化。通过在硅衬底的表面处引导硅烷和磷 - 氦气混合物的混合物，在硅衬底上沉积非晶硅层。之后，将N +离子注入到非晶硅中。然后蚀刻非晶硅层，以便稍后与稍后对应于源极和漏极区的区域重叠。接下来，沉积ONO电介质的低氧化物层，并加热该器件。通过在形成氧化物层期间加热非晶硅而不是在其沉积之后立即消除热循环。随后，依次形成ONO电介质，第二多晶硅层，硅化钨层和SiON层的氮化物层和氧化物层。

5. 发明授权

US5994239A Manufacturing process to eliminate polystringers in high density nand-type flash memory devices 失效
标题翻译：消除高密度nand型闪存器件中的多边形的制造工艺
公开(公告)号：US5994239A
公开(公告)日：1999-11-30
申请号：US993343
申请日：1997-12-18
申请人： Kent Kuohua Chang , Hao Fang , Ken Au , David Chi
发明人： Kent Kuohua Chang , Hao Fang , Ken Au , David Chi
IPC分类号： H01L21/762 , H01L21/00
CPC分类号： H01L21/28273 , H01L21/76202 , H01L27/11521
摘要： Polystringers that cause NAND-type memory core cells to malfunction are removed. A SiON layer, tungsten silicide layer, second polysilicon layer, ONO dielectric, and first polysilicon layer are successively removed from between NAND-type flash memory core cells leaving ONO fence that shields some first polysilicon layer material from removal. Next, the device is exposed to oxygen gas in a high temperature environment to oxidize the surface of the device, and in particular to remove the polystringers.
摘要翻译：导致NAND型存储器核心单元发生故障的聚束器被去除。从NAND型闪速存储器核心单元之间连续地去除SiON层，硅化钨层，第二多晶硅层，ONO电介质和第一多晶硅层，留下ONO栅栏，屏蔽了一些第一多晶硅层材料的去除。接下来，该装置在高温环境中暴露于氧气以氧化装置的表面，并且特别是去除多边形。

6. 发明申请

US20110252510A1 Soybean Plant and Seed Corresponding to Transgenic Event MON87754 and Methods for Detection Thereof 有权
标题翻译：大豆植物和种子对应于转基因事件MON87754及其检测方法
公开(公告)号：US20110252510A1
公开(公告)日：2011-10-13
申请号：US13060852
申请日：2009-07-15
申请人： Eric Aasen , David Chi , Can Duong
发明人： Eric Aasen , David Chi , Can Duong
IPC分类号： A01H5/00 , C07H21/04 , C07H21/02 , A23J3/16 , G01N33/53 , A23L1/20 , A23J1/14 , C12Q1/68 , A01H5/10
CPC分类号： A01H5/10 , A23L11/07 , A23L33/185 , C07H21/04 , C12N9/1025 , C12N15/8247 , C12Q1/6895
摘要： The present invention provides the transgenic soybean event MON87754, and the cells, seeds, plant parts, and plants comprising DNA diagnostic for this transgenic soybean event. The event itself functions to increase the oil content of soybeans carrying the event in their genome relative to commodity versions of soy. The invention also provides compositions comprising nucleotide sequences that are diagnostic for said soybean event in a sample, methods for detecting the presence of said soybean event nucleotide sequences in a sample, probes and primers for use in detecting nucleotide sequences that are diagnostic for the presence of said soybean event in a sample, growing the seeds of such soybean event into soybean plants, and breeding to produce soybean plants comprising DNA diagnostic for the soybean event.
摘要翻译：本发明提供了转基因大豆事件MON87754以及包含对该转基因大豆事件诊断的DNA的细胞，种子，植物部分和植物。该事件本身的作用是增加大豆在其基因组中携带与大豆商品版相关事件的含油量。本发明还提供了包含对样品中的所述大豆事件进行诊断的核苷酸序列的组合物，用于检测样品中所述大豆事件核苷酸序列的存在的方法，用于检测诊断存在的核苷酸序列的探针和引物在样品中说大豆事件，将这种大豆事件的种子种植成大豆植物，并育种以生产包含大豆事件DNA诊断的大豆植物。

7. 发明申请

US20070038056A1 System and methods for locating and ablating arrhythomogenic tissues 审中-公开
标题翻译：用于定位和消融假性组织的系统和方法
公开(公告)号：US20070038056A1
公开(公告)日：2007-02-15
申请号：US11583263
申请日：2006-10-19
申请人： Carlo Pappone , Peter Chen , Alan de la Rama , Cary Hata , Vivian Tran , David Chi
发明人： Carlo Pappone , Peter Chen , Alan de la Rama , Cary Hata , Vivian Tran , David Chi
IPC分类号： A61B18/04 , A61B5/04
CPC分类号： A61B5/4836 , A61B5/042 , A61B5/0422 , A61B5/6853 , A61B5/6855 , A61B5/6857 , A61B17/2202 , A61B18/1492 , A61B2017/00044 , A61B2017/00053 , A61B2017/00084 , A61B2017/00243 , A61B2017/22051 , A61N7/022
摘要： A catheter for sensing electrical events about a selected annulus region of the heart and for treating tissue in the selected annulus region has a handle assembly, a shaft having a proximal end coupled to the handle assembly, a first expandable member provided at the distal end of the shaft, and a second expandable member positioned adjacent to, but spaced apart from, the first expandable member. The second expandable member has an ablation element that emits energy to a radially surrounding area to ablate tissue.
摘要翻译：用于感测关于心脏的所选择的环形区域并且用于处理所选择的环形区域中的组织的电子事件的导管具有手柄组件，具有联接到手柄组件的近端的轴，设置在所述手柄组件的远端处的第一可扩展构件所述轴和第二可膨胀构件定位成与所述第一可膨胀构件相邻但间隔开。第二可膨胀构件具有消融元件，其向径向周围区域发射能量以烧蚀组织。

8. 发明申请

US20060004438A1 Prosthesis, delivery system and method for neurovascular aneurysm repair 审中-公开
标题翻译：神经血管动脉瘤修复的假体，输送系统和方法
公开(公告)号：US20060004438A1
公开(公告)日：2006-01-05
申请号：US11154056
申请日：2005-06-15
申请人： Miles Alexander , Eric Leopold , David Chi
发明人： Miles Alexander , Eric Leopold , David Chi
IPC分类号： A61F2/06
CPC分类号： A61F2/95 , A61F2/88 , A61F2/91 , A61F2/915 , A61F2002/91525 , A61F2002/91533 , A61F2220/005 , A61F2220/0058 , A61F2230/0054
摘要： The present invention is directed to a prosthesis for treating an aneurysm, and delivery systems and methods therefor. The prosthesis includes a radially expanding distal section coupled to a helical section, the helical section including a localized feature configured to exclude or retard blood flow into an aneurysm. Methods of loading the prosthesis onto a specially-designed delivery system that facilitates proper orientation of the prosthesis within a target vessel, and methods of using the delivery system to deliver the prosthesis, also are provided.
摘要翻译：本发明涉及一种用于治疗动脉瘤的假体及其输送系统及其方法。所述假体包括联接到螺旋部分的径向扩张的远端部分，所述螺旋部分包括被配置为排除或阻止血液流入动脉瘤的局部特征。还提供了将假体装载到促进假体在靶容器内的正确取向的专门设计的输送系统上的方法，以及使用输送系统输送假体的方法。

9. 发明授权

US06702802B1 Catheters with improved transition 有权
标题翻译：改善过渡的导管
公开(公告)号：US06702802B1
公开(公告)日：2004-03-09
申请号：US09596014
申请日：2000-06-15
申请人： David Hancock , David Chi , Michael S. Mirizzi , Peter S. Brown , Christopher C. Pfaff , Brett W. Cryer , Misty L. Pyatt
发明人： David Hancock , David Chi , Michael S. Mirizzi , Peter S. Brown , Christopher C. Pfaff , Brett W. Cryer , Misty L. Pyatt
IPC分类号： A61M2500
CPC分类号： A61F2/958 , A61F2002/9586 , A61M25/0054 , A61M25/10 , A61M2025/0063
摘要： The present invention is directed to a balloon catheter, such as a dilatation catheter and a stent delivery catheter with improved stiffness transition and specifically with no sudden changes in stiffness along the catheter length. The balloon catheters of the present invention may be used alone or be mounted with a stent in. The balloon catheters of the present invention may be used in peripheral, coronary, or neurovascular applications. The present catheter has more than one portion with different bending stiffness values, each portion comprising of components that gradually transition the bending stiffness of that portion to an adjacent portion, thus reducing the differential in bending stiffness in moving from one region to another, when the catheter is used alone or in combination with a stent in a stent delivery system.
摘要翻译：本发明涉及一种球囊导管，例如扩张导管和支架输送导管，其具有改善的刚度转变，具体而言沿导管长度没有突然的刚度变化。本发明的气囊导管可以单独使用或安装有支架。本发明的气囊导管可用于外周，冠状动脉或神经血管应用。本导管具有不止一个具有不同弯曲刚度值的部分，每个部分包括将该部分的弯曲刚度逐渐过渡到相邻部分的部件，从而减少了从一个区域移动到另一个区域时的弯曲刚度差异，导管单独使用或与支架在支架输送系统中组合使用。

10. 发明授权

US6074917A LPCVD oxide and RTA for top oxide of ONO film to improve reliability for flash memory devices 有权
标题翻译： LPCVD氧化物和RTA用于ONO膜的顶部氧化物，以提高闪存器件的可靠性
公开(公告)号：US6074917A
公开(公告)日：2000-06-13
申请号：US189227
申请日：1998-11-11
申请人： Kent Kuohua Chang , David Chi , Chin-Yang Sun
发明人： Kent Kuohua Chang , David Chi , Chin-Yang Sun
IPC分类号： H01L21/28 , H01L21/314 , H01L29/423 , H01L29/51 , H01L21/336 , H01L21/31
CPC分类号： H01L21/28273 , H01L21/28202 , H01L21/28211 , H01L21/3145 , H01L29/42324 , H01L29/511 , H01L29/518 , Y10S438/954
摘要： In one embodiment, the present invention relates to a method of forming a flash memory cell, involving the steps of forming a tunnel oxide on a substrate; forming a first polysilicon layer over the tunnel oxide; forming an insulating layer over the first polysilicon layer, the insulating layer comprising a first oxide layer over the first polysilicon layer, a nitride layer over the first oxide layer, and a second oxide layer over the nitride layer, wherein the second oxide layer is made by forming the second oxide layer by low pressure chemical vapor deposition at a temperature from about 600.degree. C. to about 850.degree. C. using SiH.sub.4 and N.sub.2 O and annealing in an N.sub.2 O atmosphere at a temperature from about 700.degree. C. to about 950.degree. C.; forming a second polysilicon layer over the insulating layer; etching at least the first polysilicon layer, the second polysilicon layer and the insulating layer, thereby defining at least one stacked gate structure; and forming a source region and a drain region in the substrate, thereby forming at least one memory cell.
摘要翻译：在一个实施例中，本发明涉及一种形成闪速存储器单元的方法，包括在衬底上形成隧道氧化物的步骤; 在隧道氧化物上形成第一多晶硅层; 在所述第一多晶硅层上形成绝缘层，所述绝缘层包括所述第一多晶硅层上的第一氧化物层，所述第一氧化物层上的氮化物层和所述氮化物层上的第二氧化物层，其中所述第二氧化物层被制成通过使用SiH 4和N 2 O在约600℃至约850℃的温度下通过低压化学气相沉积形成第二氧化物层，并在N2O气氛中在约700℃至约950℃的温度下退火 C。; 在所述绝缘层上形成第二多晶硅层; 至少蚀刻第一多晶硅层，第二多晶硅层和绝缘层，从而限定至少一个堆叠栅极结构; 以及在衬底中形成源区和漏区，由此形成至少一个存储单元。

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