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    • 5. 发明申请
    • NON-LINEAR COMMON COARSE DELAY SYSTEM AND METHOD FOR DELAYING DATA STROBE
    • 非线性常规延迟系统和延迟数据结构的方法
    • US20120194248A1
    • 2012-08-02
    • US13016472
    • 2011-01-28
    • Terence J. MageeChristopher D. PaulsonCheng-Gang Kong
    • Terence J. MageeChristopher D. PaulsonCheng-Gang Kong
    • H03H11/26G01R29/00G06F19/00G11C7/00
    • G11C11/4076G11C7/04G11C7/1072G11C7/222
    • A non-linear common coarse delay system and method for delaying a data strobe in order to preserve fine delay accuracy and compensate PVT (Process, Voltage, and Temperature) variation effects. A common coarse delay and a fine delay can be initialized to a quarter-cycle delay for shifting a read output DQS (Data Queue Strobe) associated with a memory device in order to sample a read output DQ (Data Queue) within a physical layer. The fine delay can be programmed from minimum to maximum delay with fixed linear increments at each delay step in order to determine the resolution and accuracy of the delay. An optimum delay size of both the coarse and the fine delay can be determined based on an application slowest frequency of operation. A spare coarse delay and a functional coarse delay can be trained in association with a spare fine delay and the functional fine delay can be updated in order to monitor the process, voltage, and temperature variation effects.
    • 用于延迟数据选通的非线性公共粗延迟系统和方法,以便保持精细的延迟精度并补偿PVT(过程,电压和温度)变化的影响。 普通粗延迟和精细延迟可以初始化为四分之一周期的延迟,用于移位与存储器件相关联的读输出DQS(数据队列选通),以便对物理层内的读输出DQ(数据队列)进行采样。 在每个延迟步骤中,精细延迟可以从最小到最大延迟编程为固定的线性增量,以便确定延迟的分辨率和精度。 基于应用最慢的操作频率,可以确定粗略和精细延迟的最佳延迟大小。 可以与备用精细延迟相关联地训练备用粗延迟和功能粗延迟,并且可以更新功能精细延迟以便监视过程,电压和温度变化效应。
    • 6. 发明授权
    • Apparatus and systems for VT invariant DDR3 SDRAM write leveling
    • 用于VT不变式DDR3 SDRAM写入调平的装置和系统
    • US07839716B2
    • 2010-11-23
    • US12339232
    • 2008-12-19
    • Cheng-Gang KongThomas Hughes
    • Cheng-Gang KongThomas Hughes
    • G11C8/16
    • G11C8/18G11C7/1093G11C7/22G11C7/222G11C8/12
    • Apparatus and systems for improved PVT invariant fast rank switching in a DDR3 memory subsystem. A clock skew control circuit is provided between a memory controller and a DDR3 SDRAM memory subsystem to adjust skew between the DDR3 clock signal and data related signals (e.g., DQ and/or DQS). A initial write-leveling procedure determines the correct skew and programs a register file in the skew adjustment circuit. The register file includes a register for each of multiple ranks in the DDR3 memory. The values in each register serve to control selection of alignment of the data related signals to align with one of multiple phase shifted versions of a 1× DDR3 clock signal. The phase shifted clock signals are generated by clock divider circuits from a 2× DDR clock signal and use of a single fixed delay line approximating ⅛ of a 1× DDR3 clock period.
    • 用于改进DDR3存储器子系统中的PVT不变快速级别切换的装置和系统。 时钟偏移控制电路设置在存储器控制器和DDR3 SDRAM存储器子系统之间,以调整DDR3时钟信号与数据相关信号(例如DQ和/或DQS)之间的偏差。 初始写入调平过程确定正确的偏移,并对偏斜调整电路中的寄存器文件进行编程。 寄存器文件包括DDR3存储器中多个级别中的每一个的寄存器。 每个寄存器中的值用于控制数据相关信号的对准选择,以与1×DDR3时钟信号的多个相移版本中的一个对准。 相移时钟信号由时钟分频器电路从2×DDR时钟信号产生,并使用近似1×DDR3时钟周期的单个固定延迟线。