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    • 3. 发明授权
    • Light emitting diode and fabrication method thereof
    • 发光二极管及其制造方法
    • US08704227B2
    • 2014-04-22
    • US13059399
    • 2010-12-30
    • Deyuan XiaoRichard Rugin ChangMengjan CherngChijen Hsu
    • Deyuan XiaoRichard Rugin ChangMengjan CherngChijen Hsu
    • H01L29/04
    • H01L33/24H01L33/007H01L33/12H01L33/20
    • The present invention discloses an LED and its fabrication method. The LED comprises: a sapphire substrate; an epitaxial layer, an active layer and a capping layer arranged on the sapphire substrate in sequence; wherein a plurality of cone-shaped structures are formed on the surface of the sapphire substrate close to the epitaxial layer. The cone-shaped structures can increase the light reflected by the sapphire substrate, raising the external quantum efficiency of the LED, thus increasing the light utilization rate of the LED. Furthermore, the formation of a plurality of cone-shaped structures can improve the lattice matching between the sapphire substrate and other films, reducing the crystal defects in the film formed on the sapphire substrate, increasing the internal quantum efficiency of the LED.
    • 本发明公开了一种LED及其制造方法。 LED包括:蓝宝石衬底; 一个外延层,一个有源层和一个盖层,依次布置在蓝宝石衬底上; 其中在蓝宝石衬底的靠近外延层的表面上形成多个锥形结构。 锥形结构可以增加由蓝宝石衬底反射的光,提高LED的外部量子效率,从而提高LED的光利用率。 此外,多个锥形结构的形成可以改善蓝宝石衬底和其他膜之间的晶格匹配,减少在蓝宝石衬底上形成的膜中的晶体缺陷,增加LED的内部量子效率。