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1. 发明授权

US08833431B2 Aluminum alloy material and method of manufacturing aluminum alloy backboard 有权
标题翻译：铝合金材料和铝合金背板的制造方法
公开(公告)号：US08833431B2
公开(公告)日：2014-09-16
申请号：US13059634
申请日：2010-12-30
申请人： Deyuan Xiao , Richard Rugin Chang , Mengjan Cherng , Qing Rao
发明人： Deyuan Xiao , Richard Rugin Chang , Mengjan Cherng , Qing Rao
IPC分类号： B22D17/00
CPC分类号： C22C21/00 , B22D17/00 , C22C1/026 , C22C1/1036 , C22C26/00 , F21V29/85 , H01L23/3733 , H01L23/3736 , H01L33/641 , H01L2924/0002 , H01L2924/12044 , H01L2933/0075 , H01L2924/00
摘要： The present invention discloses an aluminum alloy material, which is made of raw material of aluminum alloy. The raw material of aluminum alloy consists of the following constituents by percentage of weight: graphene: 0.1%˜1%, carbon nano tube: 1%˜5%, the rest being Al. The aluminum alloy material of the present invention has a good performance of heat dissipation, the thermal conductivity is higher than 200 W/m. Meanwhile, the present invention further provides a method of manufacturing aluminum alloy backboard, in which method, the raw material of aluminum alloy is heated and melted in a heating furnace, afterwards, the raw material of aluminum alloy after melting is formed into an aluminum alloy backboard by die-casting, in this way, the utilization rate of material is increased and the manufacturing cost of the backboard is reduced.
摘要翻译：本发明公开了一种由铝合金原料制成的铝合金材料。铝合金原料由以下重量百分比组成：石墨烯：0.1％〜1％，碳纳米管：1％〜5％，其余为Al。本发明的铝合金材料具有良好的散热性能，导热系数高于200W / m。同时，本发明还提供一种制造铝合金背板的方法，其中将铝合金原料在加热炉中加热熔化，之后将熔融后的铝合金原料形成为铝合金通过压铸，通过这种方式，材料的利用率提高，背板的制造成本降低。

2. 发明申请

US20130216425A1 ALUMINUM ALLOY MATERIAL AND METHOD OF MANUFACTURING ALUMINUM ALLOY BACKBOARD 有权
标题翻译：铝合金材料及制造铝合金背板的方法
公开(公告)号：US20130216425A1
公开(公告)日：2013-08-22
申请号：US13059634
申请日：2010-12-30
申请人： Deyuan Xiao , Richard Rugin Chang , Mengjan Cherng , Qing Rao
发明人： Deyuan Xiao , Richard Rugin Chang , Mengjan Cherng , Qing Rao
IPC分类号： F21V29/00 , C22C21/00 , B22D17/00
CPC分类号： C22C21/00 , B22D17/00 , C22C1/026 , C22C1/1036 , C22C26/00 , F21V29/85 , H01L23/3733 , H01L23/3736 , H01L33/641 , H01L2924/0002 , H01L2924/12044 , H01L2933/0075 , H01L2924/00
摘要： The present invention discloses an aluminum alloy material, which is made of raw material of aluminum alloy. The raw material of aluminum alloy consists of the following constituents by percentage of weight: graphene: 0.1%˜1%, carbon nano tube: 1%˜5%, the rest being Al. The aluminum alloy material of the present invention has a good performance of heat dissipation, the thermal conductivity is higher than 200 W/m. Meanwhile, the present invention further provides a method of manufacturing aluminum alloy backboard, in which method, the raw material of aluminum alloy is heated and melted in a heating furnace, afterwards, the raw material of aluminum alloy after melting is formed into an aluminum alloy backboard by die-casting, in this way, the utilization rate of material is increased and the manufacturing cost of the backboard is reduced.
摘要翻译：本发明公开了一种由铝合金原料制成的铝合金材料。铝合金原料由以下重量百分比组成：石墨烯：0.1％〜1％，碳纳米管：1％〜5％，其余为Al。本发明的铝合金材料具有良好的散热性能，导热系数高于200W / m。同时，本发明还提供一种制造铝合金背板的方法，其中将铝合金原料在加热炉中加热熔化，之后将熔融后的铝合金原料形成为铝合金通过压铸，通过这种方式，材料的利用率提高，背板的制造成本降低。

3. 发明授权

US08704227B2 Light emitting diode and fabrication method thereof 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US08704227B2
公开(公告)日：2014-04-22
申请号：US13059399
申请日：2010-12-30
申请人： Deyuan Xiao , Richard Rugin Chang , Mengjan Cherng , Chijen Hsu
发明人： Deyuan Xiao , Richard Rugin Chang , Mengjan Cherng , Chijen Hsu
IPC分类号： H01L29/04
CPC分类号： H01L33/24 , H01L33/007 , H01L33/12 , H01L33/20
摘要： The present invention discloses an LED and its fabrication method. The LED comprises: a sapphire substrate; an epitaxial layer, an active layer and a capping layer arranged on the sapphire substrate in sequence; wherein a plurality of cone-shaped structures are formed on the surface of the sapphire substrate close to the epitaxial layer. The cone-shaped structures can increase the light reflected by the sapphire substrate, raising the external quantum efficiency of the LED, thus increasing the light utilization rate of the LED. Furthermore, the formation of a plurality of cone-shaped structures can improve the lattice matching between the sapphire substrate and other films, reducing the crystal defects in the film formed on the sapphire substrate, increasing the internal quantum efficiency of the LED.
摘要翻译：本发明公开了一种LED及其制造方法。 LED包括：蓝宝石衬底; 一个外延层，一个有源层和一个盖层，依次布置在蓝宝石衬底上; 其中在蓝宝石衬底的靠近外延层的表面上形成多个锥形结构。锥形结构可以增加由蓝宝石衬底反射的光，提高LED的外部量子效率，从而提高LED的光利用率。此外，多个锥形结构的形成可以改善蓝宝石衬底和其他膜之间的晶格匹配，减少在蓝宝石衬底上形成的膜中的晶体缺陷，增加LED的内部量子效率。

4. 发明申请

US20130193406A1 LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20130193406A1
公开(公告)日：2013-08-01
申请号：US13059399
申请日：2010-12-30
申请人： Deyuan Xiao , Richard Rugin Chang , Mengjan Cherng , Chijen Hsu
发明人： Deyuan Xiao , Richard Rugin Chang , Mengjan Cherng , Chijen Hsu
IPC分类号： H01L33/24 , H01L33/00
CPC分类号： H01L33/24 , H01L33/007 , H01L33/12 , H01L33/20
摘要： The present invention discloses an LED and its fabrication method. The LED comprises: a sapphire substrate; an epitaxial layer, an active layer and a capping layer arranged on the sapphire substrate in sequence; wherein a plurality of cone-shaped structures are formed on the surface of the sapphire substrate close to the epitaxial layer. The cone-shaped structures can increase the light reflected by the sapphire substrate, raising the external quantum efficiency of the LED, thus increasing the light utilization rate of the LED. Furthermore, the formation of a plurality of cone-shaped structures can improve the lattice matching between the sapphire substrate and other films, reducing the crystal defects in the film formed on the sapphire substrate, increasing the internal quantum efficiency of the LED.
摘要翻译：本发明公开了一种LED及其制造方法。 LED包括：蓝宝石衬底; 一个外延层，一个有源层和一个盖层，依次布置在蓝宝石衬底上; 其中在蓝宝石衬底的靠近外延层的表面上形成多个锥形结构。锥形结构可以增加由蓝宝石衬底反射的光，提高LED的外部量子效率，从而提高LED的光利用率。此外，多个锥形结构的形成可以改善蓝宝石衬底和其他膜之间的晶格匹配，减少在蓝宝石衬底上形成的膜中的晶体缺陷，增加LED的内部量子效率。

5. 发明授权

US08969108B2 Light emitting diode and forming method thereof 有权
标题翻译：发光二极管及其形成方法
公开(公告)号：US08969108B2
公开(公告)日：2015-03-03
申请号：US13881723
申请日：2011-02-10
申请人： Deyuan Xiao , Richard Rugin Chang
发明人： Deyuan Xiao , Richard Rugin Chang
IPC分类号： H01L29/06 , H01L33/64 , H01L33/00 , H01L21/20
CPC分类号： H01L33/385 , H01L21/2007 , H01L33/007 , H01L33/0079 , H01L33/12 , H01L33/62 , H01L33/641
摘要： A light emitting diode (LED) and a forming method thereof are provided. The method for forming the LED includes: providing a semiconductor substrate (20) and a sapphire substrate (30) respectively, wherein a first bonding layer (21) is formed on the silicon substrate (20), and a sacrificial layer (32), an LED die (33) and a second bonding layer (35) are formed in turn on the sapphire substrate (30); bonding the first bonding layer (21) and the second bonding layer (35); removing the sacrificial layer (32) and lifting off the sapphire substrate (30). The method increases the effective lighting area of the LED, improves heat radiation, and enhances lighting efficiency.
摘要翻译：提供一种发光二极管（LED）及其形成方法。形成LED的方法包括：分别提供半导体衬底（20）和蓝宝石衬底（30），其中在硅衬底（20）上形成第一接合层（21）和牺牲层（32），依次在蓝宝石衬底（30）上形成LED管芯（33）和第二接合层（35）; 接合第一接合层（21）和第二接合层（35）; 去除牺牲层（32）并提起蓝宝石衬底（30）。该方法增加了LED的有效照明面积，改善了散热，提高了照明效率。

6. 发明申请

US20130214245A1 LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：US20130214245A1
公开(公告)日：2013-08-22
申请号：US13059631
申请日：2010-12-30
申请人： Richard Rugin Chang , Deyuan Xiao
发明人： Richard Rugin Chang , Deyuan Xiao
IPC分类号： H01L33/58 , H01L33/06
CPC分类号： H01L33/58 , H01L33/06 , H01L33/20 , H01L2933/0091
摘要： The present invention discloses an LED and its fabrication method. The LED comprises: a substrate; an epitaxial layer, an active layer and a capping layer arranged on the substrate in sequence; wherein a plurality of microlens structures arc formed on the surface of the substrate away from the epitaxial layer, and a plurality of cams are formed on the surfaces of the microlens structures. When the light emitted from the active layer passes through the surfaces of the microlens structures or the surfaces of the cams, the incident angle is always smaller than the critical angle of total reflection, thus preventing total reflection and making sure that most of the light pass through the surfaces of the microlens structures and the cams, in this way improving external quantum efficiency of the LED, avoiding the rise of the internal temperature of the LED and improving the performance of the LED.
摘要翻译：本发明公开了一种LED及其制造方法。 LED包括：基板; 一个外延层，一个活性层和一个覆盖层，依次排列在基片上; 其中在所述衬底的表面上形成多个微透镜结构，远离所述外延层，并且在所述微透镜结构的表面上形成多个凸轮。当从有源层发射的光通过微透镜结构或凸轮表面时，入射角度总是小于全反射的临界角，从而防止全反射并确保大部分光通过通过微透镜结构和凸轮的表面，以这种方式提高LED的外部量子效率，避免LED的内部温度升高并提高LED的性能。

7. 发明申请

US20130221387A1 LIGHT EMITTING DIODE AND A MANUFACTURING METHOD THEREOF, A LIGHT EMITTING DEVICE 有权
标题翻译：发光二极管及其制造方法，发光装置
公开(公告)号：US20130221387A1
公开(公告)日：2013-08-29
申请号：US13129386
申请日：2010-12-31
申请人： Richard Rugin Chang , Deyuan Xiao
发明人： Richard Rugin Chang , Deyuan Xiao
IPC分类号： H01L33/38
CPC分类号： H01L33/382 , H01L33/20 , H01L33/38 , H01L33/46 , H01L2933/0016 , H01L2933/0091
摘要： The present invention provides an LED and the manufacturing method thereof, and a light emitting device. The LED includes a first electrode, for connecting the LED to a negative electrode of a power supply; a substrate, located on the first electrode; and an LED die, located on the substrate; in which a plurality of contact holes are formed extending through the substrate, the diameter of upper parts of the contact holes is less than the diameter of lower parts of the contact holes, and the contact holes are filled with electrode plugs connecting the first electrode to the LED die. The light emitting device includes the LED, and further includes a susceptor and an LED mounted on the susceptor. The manufacturing method includes: forming successively an LED die and a second electrode on a substrate; patterning a backsurface of the substrate to form inverted trapezoidal contact holes which expose the LED die; and filling the contact holes with conductive material till the backface of the substrate is covered by the conductive material. The LED has a high luminous efficiency and the manufacturing method is easy to implement.
摘要翻译：本发明提供一种LED及其制造方法以及发光装置。 LED包括用于将LED连接到电源的负极的第一电极; 位于所述第一电极上的衬底; 和位于基板上的LED管芯; 其中形成有多个接触孔延伸穿过衬底，接触孔的上部的直径小于接触孔的下部的直径，并且接触孔填充有将第一电极连接到 LED模具。发光装置包括LED，并且还包括安装在基座上的基座和LED。该制造方法包括：在基板上依次形成LED芯片和第二电极; 图案化衬底的后表面以形成露出LED管芯的倒梯形接触孔; 并且用导电材料填充接触孔，直到衬底的背面被导电材料覆盖。 LED的发光效率高，制造方法易于实现。

8. 发明申请

US20120261691A1 LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：发光装置及其制造方法
公开(公告)号：US20120261691A1
公开(公告)日：2012-10-18
申请号：US13128366
申请日：2010-12-09
申请人： Richard Rugin Chang , Deyuan Xiao
发明人： Richard Rugin Chang , Deyuan Xiao
IPC分类号： H01L33/60
CPC分类号： H01L33/0079 , H01L33/007 , H01L33/20 , H01L33/405 , H01L33/60 , H01L2224/14 , H01L2224/16225 , H01L2924/181 , H01L2933/0091 , H01L2924/00012
摘要： The present invention provides a light emitting device, including a base, an LED inversely mounted on the base. The LED includes a buffer layer, an LED chip on the buffer layer. The buffer layer includes a plurality of protrusions with complementary pyramid structure on a light-exiting surface of the LED. The present invention also provides a method for manufacturing a light emitting device, including: providing a substrate and forming a plurality of pyramid structures on the substrate; forming successively a buffer layer, an n-type semiconductor layer, an active layer, a p-type semiconductor layer and a contact layer on the substrate with the pyramid structures; forming an opening with a depth at least from the contact layer to a top of the n-type semiconductor layer, and forming a first electrode on the contact layer and a second electrode on a bottom of the opening; and removing the substrate. The light emitting device has a high luminous efficiency and the manufacturing method is easy to implement.
摘要翻译：本发明提供一种发光装置，包括基座，反向安装在基座上的LED。 LED包括缓冲层，缓冲层上的LED芯片。缓冲层包括在LED的光出射表面上具有互补金字塔结构的多个突起。本发明还提供了一种制造发光器件的方法，包括：提供衬底并在衬底上形成多个金字塔结构; 在具有金字塔结构的基板上连续形成缓冲层，n型半导体层，有源层，p型半导体层和接触层; 形成至少从所述接触层到所述n型半导体层的顶部的深度的开口，以及在所述接触层上形成第一电极和在所述开口的底部形成第二电极; 并去除衬底。发光装置的发光效率高，制造方法易于实现。

9. 发明授权

US08937322B2 Light emitting diode and a manufacturing method thereof, a light emitting device 有权
标题翻译：发光二极管及其制造方法，发光装置
公开(公告)号：US08937322B2
公开(公告)日：2015-01-20
申请号：US13129386
申请日：2010-12-31
申请人： Richard Rugin Chang , Deyuan Xiao
发明人： Richard Rugin Chang , Deyuan Xiao
IPC分类号： H01L27/15 , H01L33/38 , H01L33/20 , H01L33/46
CPC分类号： H01L33/382 , H01L33/20 , H01L33/38 , H01L33/46 , H01L2933/0016 , H01L2933/0091
摘要： The present invention provides an LED and the manufacturing method thereof, and a light emitting device. The LED includes a first electrode, for connecting the LED to a negative electrode of a power supply; a substrate, located on the first electrode; and an LED die, located on the substrate; in which a plurality of contact holes are formed extending through the substrate, the diameter of upper parts of the contact holes is less than the diameter of lower parts of the contact holes, and the contact holes are filled with electrode plugs connecting the first electrode to the LED die. The light emitting device includes the LED, and further includes a susceptor and an LED mounted on the susceptor. The manufacturing method includes: forming successively an LED die and a second electrode on a substrate; patterning a backsurface of the substrate to form inverted trapezoidal contact holes which expose the LED die; and filling the contact holes with conductive material till the backface of the substrate is covered by the conductive material. The LED has a high luminous efficiency and the manufacturing method is easy to implement.
摘要翻译：本发明提供一种LED及其制造方法以及发光装置。 LED包括用于将LED连接到电源的负极的第一电极; 位于所述第一电极上的衬底; 和位于基板上的LED管芯; 其中形成有多个接触孔延伸穿过衬底，接触孔的上部的直径小于接触孔的下部的直径，并且接触孔填充有将第一电极连接到 LED模具。发光装置包括LED，并且还包括安装在基座上的基座和LED。该制造方法包括：在基板上依次形成LED芯片和第二电极; 图案化衬底的后表面以形成露出LED管芯的倒梯形接触孔; 并且用导电材料填充接触孔，直到衬底的背面被导电材料覆盖。 LED的发光效率高，制造方法易于实现。

10. 发明申请

US20120132941A1 LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20120132941A1
公开(公告)日：2012-05-31
申请号：US13128820
申请日：2010-12-09
申请人： Richard Rugin Chang , Deyuan Xiao
发明人： Richard Rugin Chang , Deyuan Xiao
IPC分类号： H01L33/60 , H01L33/48
CPC分类号： H01L33/20 , H01L33/405 , H01L2224/14 , H01L2933/0091
摘要： The present invention provides a light emitting device and a method for manufacturing a light emitting device. The light emitting device includes a base, an LED inversely mounted on the base. The LED includes an LED chip connected to the base and a buffer layer located on the LED. The buffer layer includes a plurality of depressions with complementary pyramid structure on a surface of the buffer layer not face the LED, the surface being a light-exiting surface of the LED. The buffer layer is made from silicon carbide. The light emitting device has a large area of the light-exiting surface and provides a reflecting film on a base, thus improving the luminous efficiency of the light emitting device. Inversely mounting mode is adopt, which is easy to implement.
摘要翻译：本发明提供一种发光器件及其制造方法。发光装置包括基座，反向安装在基座上的LED。 LED包括连接到基座的LED芯片和位于LED上的缓冲层。缓冲层包括在缓冲层的不面向LED的表面上具有互补金字塔结构的多个凹陷，该表面是LED的光出射表面。缓冲层由碳化硅制成。发光器件具有大的出射面积，并且在基底上提供反射膜，从而提高了发光器件的发光效率。采用相反的安装方式，易于实施。

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