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1. 发明申请

US20130295740A1 FORMING CMOS WITH CLOSE PROXIMITY STRESSORS 有权
标题翻译：形成具有紧密接近压力的CMOS
公开(公告)号：US20130295740A1
公开(公告)日：2013-11-07
申请号：US13465159
申请日：2012-05-07
申请人： Desmond J. Donegan, JR. , Abhishek Dube , Steven Jones , JOPHY S. KOSHY , Viorel Ontalus
发明人： Desmond J. Donegan, JR. , Abhishek Dube , Steven Jones , JOPHY S. KOSHY , Viorel Ontalus
IPC分类号： H01L21/336
CPC分类号： H01L29/7848 , H01L21/823807 , H01L21/823814 , H01L29/66628 , H01L29/66636
摘要： A method of forming transistors with close proximity stressors to channel regions of the transistors is provided. The method includes forming a first transistor, in a first region of a substrate, having a gate stack on top of the first region of the substrate and a set of spacers adjacent to sidewalls of the gate stack, the first region including a source and drain region of the first transistor; forming a second transistor, in a second region of the substrate, having a gate stack on top of the second region of the substrate and a set of spacers adjacent to sidewalls of the gate stack, the second region including a source and drain region of the second transistor; covering the first transistor with a photo-resist mask without covering the second transistor; creating recesses in the source and drain regions of the second transistor; and forming stressors in the recesses.
摘要翻译：提供了一种形成具有接近应力的晶体管到晶体管的沟道区域的方法。该方法包括在衬底的第一区域中形成第一晶体管，在衬底的第一区域的顶部上具有栅极叠层，以及邻近栅堆叠的侧壁的一组间隔物，第一区域包括源极和漏极第一晶体管的区域; 在所述衬底的第二区域中形成第二晶体管，在所述衬底的所述第二区域的顶部上具有栅极叠层，以及邻近所述栅极叠层的侧壁的一组间隔区，所述第二区域包括所述栅极叠层的源极和漏极区域第二晶体管; 用光致抗蚀剂掩模覆盖第一晶体管而不覆盖第二晶体管; 在所述第二晶体管的源极和漏极区域中产生凹陷; 并在凹槽中形成应力源。

2. 发明授权

US09041119B2 Forming CMOS with close proximity stressors 有权
标题翻译：形成具有接近应力的CMOS
公开(公告)号：US09041119B2
公开(公告)日：2015-05-26
申请号：US13465159
申请日：2012-05-07
申请人： Desmond J. Donegan, Jr. , Abhishek Dube , Steven Jones , Jophy S. Koshy , Viorel Ontalus
发明人： Desmond J. Donegan, Jr. , Abhishek Dube , Steven Jones , Jophy S. Koshy , Viorel Ontalus
IPC分类号： H01L29/02 , H01L29/78 , H01L29/66
CPC分类号： H01L29/7848 , H01L21/823807 , H01L21/823814 , H01L29/66628 , H01L29/66636
摘要： A method of forming transistors with close proximity stressors to channel regions of the transistors is provided. The method includes forming a first transistor, in a first region of a substrate, having a gate stack on top of the first region of the substrate and a set of spacers adjacent to sidewalls of the gate stack, the first region including a source and drain region of the first transistor; forming a second transistor, in a second region of the substrate, having a gate stack on top of the second region of the substrate and a set of spacers adjacent to sidewalls of the gate stack, the second region including a source and drain region of the second transistor; covering the first transistor with a photo-resist mask without covering the second transistor; creating recesses in the source and drain regions of the second transistor; and forming stressors in the recesses.
摘要翻译：提供了一种形成具有接近应力的晶体管到晶体管的沟道区域的方法。该方法包括在衬底的第一区域中形成第一晶体管，在衬底的第一区域的顶部上具有栅极叠层，以及邻近栅堆叠的侧壁的一组间隔物，第一区域包括源极和漏极第一晶体管的区域; 在所述衬底的第二区域中形成第二晶体管，在所述衬底的所述第二区域的顶部上具有栅极叠层，以及邻近所述栅极叠层的侧壁的一组间隔区，所述第二区域包括所述栅极叠层的源极和漏极区域第二晶体管; 用光致抗蚀剂掩模覆盖第一晶体管而不覆盖第二晶体管; 在所述第二晶体管的源极和漏极区域中产生凹陷; 并在凹槽中形成应力源。

3. 发明授权

US08236660B2 Monolayer dopant embedded stressor for advanced CMOS 有权
标题翻译：单层掺杂剂嵌入式应力器用于高级CMOS
公开(公告)号：US08236660B2
公开(公告)日：2012-08-07
申请号：US12764329
申请日：2010-04-21
申请人： Kevin K. Chan , Abhishek Dube , Judson R. Holt , Jinghong Li , Joseph S. Newbury , Viorel Ontalus , Dae-Gyu Park , Zhengmao Zhu
发明人： Kevin K. Chan , Abhishek Dube , Judson R. Holt , Jinghong Li , Joseph S. Newbury , Viorel Ontalus , Dae-Gyu Park , Zhengmao Zhu
IPC分类号： H01L21/336
CPC分类号： H01L29/7848 , H01L21/823807 , H01L21/823814 , H01L29/165 , H01L29/6656 , H01L29/66636 , H01L29/7834
摘要： Semiconductor structures are disclosed that have embedded stressor elements therein. The disclosed structures include at least one FET gate stack located on an upper surface of a semiconductor substrate. The at least one FET gate stack includes source and drain extension regions located within the semiconductor substrate at a footprint of the at least one FET gate stack. A device channel is also present between the source and drain extension regions and beneath the at least one gate stack. The structure further includes embedded stressor elements located on opposite sides of the at least one FET gate stack and within the semiconductor substrate. Each of the embedded stressor elements includes a lower layer of a first epitaxy doped semiconductor material having a lattice constant that is different from a lattice constant of the semiconductor substrate and imparts a strain in the device channel, and an upper layer of a second epitaxy doped semiconductor material located atop the lower layer. The lower layer of the first epitaxy doped semiconductor material has a lower content of dopant as compared to the upper layer of the second epitaxy doped semiconductor material. The structure further includes at least one monolayer of dopant located within the upper layer of each of the embedded stressor elements. The at least one monolayer of dopant is in direct contact with an edge of either the source extension region or the drain extension region.
摘要翻译：公开了在其中具有嵌入的应力元件的半导体结构。所公开的结构包括位于半导体衬底的上表面上的至少一个FET栅极堆叠。所述至少一个FET栅极堆叠包括在所述至少一个FET栅极堆叠中的覆盖区域处位于所述半导体衬底内的源极和漏极延伸区域。器件沟道也存在于源极延伸区域和漏极延伸区域之间以及至少一个栅极堆叠层下方。该结构还包括位于至少一个FET栅极堆叠的相对侧上并且位于半导体衬底内的嵌入式应力元件。每个嵌入式应力元件包括第一外延掺杂半导体材料的下层，其具有不同于半导体衬底的晶格常数的晶格常数并且在器件沟道中施加应变，并且第二外延掺杂的上层半导体材料位于下层的顶部。与第二外延掺杂半导体材料的上层相比，第一外延掺杂半导体材料的下层具有较低的掺杂剂含量。该结构还包括位于每个嵌入的应力元件的上层内的至少一层掺杂剂单层。所述至少一个掺杂剂单层与源极延伸区域或漏极延伸区域的边缘直接接触。

4. 发明申请

US20110260213A1 MONOLAYER DOPANT EMBEDDED STRESSOR FOR ADVANCED CMOS 有权
标题翻译：用于高级CMOS的单层掺杂嵌入式压电器
公开(公告)号：US20110260213A1
公开(公告)日：2011-10-27
申请号：US12764329
申请日：2010-04-21
申请人： Kevin K. Chan , Abhishek Dube , Judson R. Holt , Jinghong Li , Joseph S. Newbury , Viorel Ontalus , Dae-Gyu Park , Zhengmao Zhu
发明人： Kevin K. Chan , Abhishek Dube , Judson R. Holt , Jinghong Li , Joseph S. Newbury , Viorel Ontalus , Dae-Gyu Park , Zhengmao Zhu
IPC分类号： H01L29/772 , H01L21/335
CPC分类号： H01L29/7848 , H01L21/823807 , H01L21/823814 , H01L29/165 , H01L29/6656 , H01L29/66636 , H01L29/7834
摘要： Semiconductor structures are disclosed that have embedded stressor elements therein. The disclosed structures include at least one FET gate stack located on an upper surface of a semiconductor substrate. The at least one FET gate stack includes source and drain extension regions located within the semiconductor substrate at a footprint of the at least one FET gate stack. A device channel is also present between the source and drain extension regions and beneath the at least one gate stack. The structure further includes embedded stressor elements located on opposite sides of the at least one FET gate stack and within the semiconductor substrate. Each of the embedded stressor elements includes a lower layer of a first epitaxy doped semiconductor material having a lattice constant that is different from a lattice constant of the semiconductor substrate and imparts a strain in the device channel, and an upper layer of a second epitaxy doped semiconductor material located atop the lower layer. The lower layer of the first epitaxy doped semiconductor material has a lower content of dopant as compared to the upper layer of the second epitaxy doped semiconductor material. The structure further includes at least one monolayer of dopant located within the upper layer of each of the embedded stressor elements. The at least one monolayer of dopant is in direct contact with an edge of either the source extension region or the drain extension region.
摘要翻译：公开了在其中具有嵌入的应力元件的半导体结构。所公开的结构包括位于半导体衬底的上表面上的至少一个FET栅极堆叠。所述至少一个FET栅极堆叠包括在所述至少一个FET栅极堆叠中的覆盖区域处位于所述半导体衬底内的源极和漏极延伸区域。器件沟道也存在于源极延伸区域和漏极延伸区域之间以及至少一个栅极堆叠层下方。该结构还包括位于至少一个FET栅极堆叠的相对侧上并且位于半导体衬底内的嵌入式应力元件。每个嵌入式应力元件包括第一外延掺杂半导体材料的下层，其具有不同于半导体衬底的晶格常数的晶格常数并且在器件沟道中施加应变，并且第二外延掺杂的上层半导体材料位于下层的顶部。与第二外延掺杂半导体材料的上层相比，第一外延掺杂半导体材料的下层具有较低的掺杂剂含量。该结构还包括位于每个嵌入的应力元件的上层内的至少一层掺杂剂单层。所述至少一个掺杂剂单层与源极延伸区域或漏极延伸区域的边缘直接接触。

5. 发明授权

US08394712B2 Cavity-free interface between extension regions and embedded silicon-carbon alloy source/drain regions 有权
标题翻译：扩展区域和嵌入式硅 - 碳合金源极/漏极区域之间的无空隙界面
公开(公告)号：US08394712B2
公开(公告)日：2013-03-12
申请号：US13101260
申请日：2011-05-05
申请人： Abhishek Dube , Viorel Ontalus
发明人： Abhishek Dube , Viorel Ontalus
IPC分类号： H01L21/20
CPC分类号： H01L21/823481 , H01L21/823412 , H01L21/823807 , H01L21/823878 , H01L29/665 , H01L29/66545 , H01L29/66628 , H01L29/66636 , H01L29/7848
摘要： A gate stack is formed on a silicon substrate, and source/drain extension regions are formed around the gate stack. A dielectric spacer is formed around the gate stack. A pair of trenches is formed around the gate stack and the dielectric spacer by an etch so that sidewalls of the source/drain extension regions are exposed. Within each trench, an n-doped silicon liner is deposited on the sidewalls of the trenches by a first selective epitaxy process so that the interface between the dielectric spacer and the source/drain extension region is covered. Within each trench, an n-doped single crystalline silicon-carbon alloy is subsequently deposited to fill the trench by a second selective epitaxy process. A combination of an n-doped single crystalline silicon liner and an n-doped single crystalline silicon-carbon alloy functions as embedded source/drain regions of an n-type field effect transistor (NFET), which applies a tensile stress to the channel of the transistor.
摘要翻译：在硅衬底上形成栅极叠层，并且在栅极堆叠周围形成源极/漏极延伸区域。在栅极堆叠周围形成介电隔离物。通过蚀刻在栅极堆叠和电介质间隔物周围形成一对沟槽，使得源极/漏极延伸区域的侧壁被暴露。在每个沟槽内，通过第一选择性外延工艺将n掺杂硅衬垫沉积在沟槽的侧壁上，以便覆盖介质间隔物与源极/漏极延伸区之间的界面。在每个沟槽内，随后沉积n掺杂的单晶硅 - 碳合金以通过第二选择性外延工艺填充沟槽。 n掺杂单晶硅衬垫和n掺杂单晶硅碳合金的组合用作n型场效应晶体管（NFET）的嵌入式源极/漏极区域，其对该沟道施加拉伸应力晶体管。

6. 发明申请

US20120248436A1 REDUCED PATTERN LOADING FOR DOPED EPITAXIAL PROCESS AND SEMICONDUCTOR STRUCTURE 失效
标题翻译：用于掺杂外延工艺和半导体结构的减少图案加载
公开(公告)号：US20120248436A1
公开(公告)日：2012-10-04
申请号：US13075450
申请日：2011-03-30
申请人： Abhishek Dube , Viorel Ontalus , Kathryn T. Schonenberg , Zhengmao Zhu
发明人： Abhishek Dube , Viorel Ontalus , Kathryn T. Schonenberg , Zhengmao Zhu
IPC分类号： H01L23/48 , H01L21/20
CPC分类号： H01L21/823425 , H01L21/02529 , H01L21/02576 , H01L21/823412 , H01L22/12 , H01L22/34 , H01L29/66636 , H01L29/7848
摘要： A semiconductor substrate having transistor structures and test structures with spacing between the transistor structures smaller than the spacing between the test structures is provided. A first iteratively performed deposition and etch process includes: depositing a first doped epitaxial layer having a first concentration of a dopant over the semiconductor substrate, and etching the first doped epitaxial layer. A second iteratively performed deposition and etch process includes: depositing a second doped epitaxial layer having a second concentration of the dopant higher than the first concentration over the semiconductor substrate, and etching the second doped epitaxial layer. The first concentration results in a first net growth rate over the transistor structures and the second concentration results in a lower, second net growth rate over the test structures than the transistor structures, resulting in reduced pattern loading.
摘要翻译：提供了具有晶体管结构的半导体衬底和在晶体管结构之间具有小于测试结构之间的间隔的测试结构。第一迭代执行的沉积和蚀刻工艺包括：在半导体衬底上沉积具有掺杂剂的第一浓度的第一掺杂外延层，并蚀刻第一掺杂外延层。第二迭代进行的沉积和蚀刻工艺包括：在半导体衬底上沉积具有高于第一浓度的掺杂剂的第二浓度的第二掺杂外延层，并蚀刻第二掺杂外延层。第一个浓度导致超过晶体管结构的第一净增长率，而第二浓度导致比晶体管结构高出测试结构的较低的第二净增长率，导致模式负载减小。

7. 发明授权

US08035141B2 Bi-layer nFET embedded stressor element and integration to enhance drive current 有权
标题翻译：双层nFET嵌入式应力元件并集成增强驱动电流
公开(公告)号：US08035141B2
公开(公告)日：2011-10-11
申请号：US12607104
申请日：2009-10-28
申请人： Kevin K. Chan , Abhishek Dube , Jinghong Li , Viorel Ontalus , Zhengmao Zhu
发明人： Kevin K. Chan , Abhishek Dube , Jinghong Li , Viorel Ontalus , Zhengmao Zhu
IPC分类号： H01L29/76
CPC分类号： H01L29/7848 , H01L29/165 , H01L29/66636 , H01L29/7834 , Y10S257/90 , Y10S257/902 , Y10S257/903
摘要： A semiconductor structure including a bi-layer nFET embedded stressor element is disclosed. The bi-layer nFET embedded stressor element can be integrated into any CMOS process flow. The bi-layer nFET embedded stressor element includes an implant damaged free first layer of a first epitaxy semiconductor material having a lattice constant that is different from a lattice constant of a semiconductor substrate and imparts a tensile strain in a device channel of an nFET gate stack. Typically, and when the semiconductor is composed of silicon, the first layer of the bi-layer nFET embedded stressor element is composed of Si:C. The bi-layer nFET embedded stressor element further includes a second layer of a second epitaxy semiconductor material that has a lower resistance to dopant diffusion than the first epitaxy semiconductor material. Typically, and when the semiconductor is composed of silicon, the second layer of the bi-layer nFET embedded stressor element is composed of silicon. Only the second layer of the bi-layer nFET embedded stressor element includes the implanted source/drain regions.
摘要翻译：公开了一种包括双层nFET嵌入式应力元件的半导体结构。双层nFET嵌入式应力元件可以集成到任何CMOS工艺流程中。双层nFET嵌入式应力元件包括具有不同于半导体衬底的晶格常数的晶格常数的第一外延半导体材料的免费第一层的植入物，并且在nFET栅极堆叠的器件沟道中施加拉伸应变。通常，当半导体由硅组成时，双层nFET嵌入的应力元件的第一层由Si：C组成。双层nFET嵌入式应力元件还包括具有比第一外延半导体材料更低的掺杂剂扩散阻力的第二外延半导体材料层。通常，当半导体由硅组成时，双层nFET嵌入的应力元件的第二层由硅组成。双层nFET嵌入式应力元件的第二层仅包括注入的源极/漏极区域。

8. 发明授权

US08421191B2 Monolayer dopant embedded stressor for advanced CMOS 有权
标题翻译：单层掺杂剂嵌入式应力器用于高级CMOS
公开(公告)号：US08421191B2
公开(公告)日：2013-04-16
申请号：US13533499
申请日：2012-06-26
申请人： Kevin K. Chan , Abhishek Dube , Judson R. Holt , Jinghong Li , Joseph S. Newbury , Viorel Ontalus , Dae-Gyu Park , Zhengmao Zhu
发明人： Kevin K. Chan , Abhishek Dube , Judson R. Holt , Jinghong Li , Joseph S. Newbury , Viorel Ontalus , Dae-Gyu Park , Zhengmao Zhu
IPC分类号： H01L31/117
CPC分类号： H01L29/7848 , H01L21/823807 , H01L21/823814 , H01L29/165 , H01L29/6656 , H01L29/66636 , H01L29/7834
摘要： Semiconductor structures are disclosed that include at least one FET gate stack located on a semiconductor substrate. The at least one FET gate stack includes source and drain extension regions located within the semiconductor substrate. A device channel is also present between the source and drain extension regions and beneath the at least one gate stack. Embedded stressor elements are located on opposite sides of the at least one FET gate stack and within the semiconductor substrate. Each stressor element includes a lower layer of a first epitaxy doped semiconductor material having a lattice constant that is different from a lattice constant of the semiconductor substrate and imparts a strain in the device channel, and an upper layer of a second epitaxy doped semiconductor material. At least one monolayer of dopant is located within the upper layer of each of the embedded stressor elements.
摘要翻译：公开了包括位于半导体衬底上的至少一个FET栅叠层的半导体结构。所述至少一个FET栅极堆叠包括位于半导体衬底内的源极和漏极延伸区域。器件沟道也存在于源极延伸区域和漏极延伸区域之间以及至少一个栅极堆叠层下方。嵌入式应力元件位于至少一个FET栅极堆叠的相对侧并且位于半导体衬底内。每个应力元件包括第一外延掺杂半导体材料的下层，其具有不同于半导体衬底的晶格常数的晶格常数并且在器件沟道中施加应变，以及第二外延掺杂半导体材料的上层。至少一个单层的掺杂剂位于每个嵌入的应力元件的上层内。

9. 发明授权

US08338279B2 Reduced pattern loading for doped epitaxial process and semiconductor structure 失效
标题翻译：用于掺杂外延工艺和半导体结构的减少图案负载
公开(公告)号：US08338279B2
公开(公告)日：2012-12-25
申请号：US13075450
申请日：2011-03-30
申请人： Abhishek Dube , Viorel Ontalus , Kathryn T. Schonenberg , Zhengmao Zhu
发明人： Abhishek Dube , Viorel Ontalus , Kathryn T. Schonenberg , Zhengmao Zhu
IPC分类号： H01L21/20
CPC分类号： H01L21/823425 , H01L21/02529 , H01L21/02576 , H01L21/823412 , H01L22/12 , H01L22/34 , H01L29/66636 , H01L29/7848
摘要： A semiconductor substrate having transistor structures and test structures with spacing between the transistor structures smaller than the spacing between the test structures is provided. A first iteratively performed deposition and etch process includes: depositing a first doped epitaxial layer having a first concentration of a dopant over the semiconductor substrate, and etching the first doped epitaxial layer. A second iteratively performed deposition and etch process includes: depositing a second doped epitaxial layer having a second concentration of the dopant higher than the first concentration over the semiconductor substrate, and etching the second doped epitaxial layer. The first concentration results in a first net growth rate over the transistor structures and the second concentration results in a lower, second net growth rate over the test structures than the transistor structures, resulting in reduced pattern loading.
摘要翻译：提供了具有晶体管结构的半导体衬底和在晶体管结构之间具有小于测试结构之间的间隔的测试结构。第一迭代执行的沉积和蚀刻工艺包括：在半导体衬底上沉积具有掺杂剂的第一浓度的第一掺杂外延层，并蚀刻第一掺杂外延层。第二迭代进行的沉积和蚀刻工艺包括：在半导体衬底上沉积具有高于第一浓度的掺杂剂的第二浓度的第二掺杂外延层，并蚀刻第二掺杂外延层。第一个浓度导致超过晶体管结构的第一净增长率，而第二浓度导致比晶体管结构高出测试结构的较低的第二净增长率，导致模式负载减小。

10. 发明申请

US20110095343A1 BI-LAYER nFET EMBEDDED STRESSOR ELEMENT AND INTEGRATION TO ENHANCE DRIVE CURRENT 有权
标题翻译：双层NFET嵌入式应力元件和集成以增强驱动电流
公开(公告)号：US20110095343A1
公开(公告)日：2011-04-28
申请号：US12607104
申请日：2009-10-28
申请人： Kevin K. Chan , Abhishek Dube , Jinghong Li , Viorel Ontalus , Zhengmao Zhu
发明人： Kevin K. Chan , Abhishek Dube , Jinghong Li , Viorel Ontalus , Zhengmao Zhu
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7848 , H01L29/165 , H01L29/66636 , H01L29/7834 , Y10S257/90 , Y10S257/902 , Y10S257/903
摘要： A semiconductor structure including a bi-layer nFET embedded stressor element is disclosed. The bi-layer nFET embedded stressor element can be integrated into any CMOS process flow. The bi-layer nFET embedded stressor element includes an implant damaged free first layer of a first epitaxy semiconductor material having a lattice constant that is different from a lattice constant of a semiconductor substrate and imparts a tensile strain in a device channel of an nFET gate stack. Typically, and when the semiconductor is composed of silicon, the first layer of the bi-layer nFET embedded stressor element is composed of Si:C. The bi-layer nFET embedded stressor element further includes a second layer of a second epitaxy semiconductor material that has a lower resistance to dopant diffusion than the first epitaxy semiconductor material. Typically, and when the semiconductor is composed of silicon, the second layer of the bi-layer nFET embedded stressor element is composed of silicon. Only the second layer of the bi-layer nFET embedded stressor element includes the implanted source/drain regions.
摘要翻译：公开了一种包括双层nFET嵌入式应力元件的半导体结构。双层nFET嵌入式应力元件可以集成到任何CMOS工艺流程中。双层nFET嵌入式应力元件包括具有不同于半导体衬底的晶格常数的晶格常数的第一外延半导体材料的免费第一层的植入物，并且在nFET栅极堆叠的器件沟道中施加拉伸应变。通常，当半导体由硅组成时，双层nFET嵌入的应力元件的第一层由Si：C组成。双层nFET嵌入式应力元件还包括具有比第一外延半导体材料更低的掺杂剂扩散阻力的第二外延半导体材料层。通常，当半导体由硅组成时，双层nFET嵌入的应力元件的第二层由硅组成。双层nFET嵌入式应力元件的第二层仅包括注入的源极/漏极区域。

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