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    • 4. 发明授权
    • Off-center deposition of organic semiconductor in an organic semiconductor device
    • 有机半导体在有机半导体器件中的偏心沉积
    • US07948016B1
    • 2011-05-24
    • US12611556
    • 2009-11-03
    • Scott M. SchnobrichRobert S. CloughDennis E. VogelMichael E. Griffin
    • Scott M. SchnobrichRobert S. CloughDennis E. VogelMichael E. Griffin
    • H01L29/76H01L23/58
    • H01L51/0005H01L51/0558
    • The present disclosure provides a method of making a thin film semiconductor device such as a transistor comprising the steps of: a) providing a substrate bearing first and second conductive zones which define a channel therebetween, where the channel does not border more than 75% of the perimeter of either conductive zone; and b) depositing a discrete aliquot of a solution comprising an organic semiconductor adjacent to or on the channel, where a majority of the solution is deposited to one side of the channel and not on the channel. In some embodiments of the present disclosure, the solution is deposited entirely to one side of the channel, not on the channel, and furthermore the solution is deposited in a band having a length that is less than the channel length. The present disclosure additionally provides thin film semiconductor devices such as a transistors.
    • 本公开内容提供了制造诸如晶体管的薄膜半导体器件的方法,包括以下步骤:a)提供承载第一和第二导电区域的衬底,其在其间限定通道,其中通道不超过75% 任一导电区的周长; 以及b)沉积包含邻近于或在通道上的有机半导体的溶液的离散等分试样,其中大部分溶液沉积在通道的一侧,而不是在通道上。 在本公开的一些实施例中,溶液完全沉积在通道的一侧,而不是在通道上,此外,溶液沉积在具有小于通道长度的长度的带中。 本公开另外提供诸如晶体管的薄膜半导体器件。
    • 10. 发明申请
    • METHODS OF PREPARING FLUORINATED CARBOXYLIC ACIDS AND THEIR SALTS
    • 制备氟化羧酸及其盐的方法
    • US20120184770A1
    • 2012-07-19
    • US13497173
    • 2010-10-21
    • Klaus HintzerDennis E. VogelMiguel A. GuerraJolanta IgnatowskaGerd-Volker RöschenthalerOleg ShyshkovKim M VogelTilman C. Zipplies
    • Klaus HintzerDennis E. VogelMiguel A. GuerraJolanta IgnatowskaGerd-Volker RöschenthalerOleg ShyshkovKim M VogelTilman C. Zipplies
    • C07C51/16C07C51/285C07C51/305C07C51/23C25B3/02C07C51/27C07C51/29
    • C07C51/27C07C53/21C07C59/135
    • A method for preparing fluorinated carboxylic acids and theirs salts is described comprising subjecting a fluorinated alcohol of the general formula (A): A-CH2—OH to at least one first and at least one second oxidizing agent to produce a highly fluorinated carboxylic acid or their salts of the general formula (B): A-COO M+, wherein M+ represents a cation and wherein A in formulas (A) and (B) is the same and A represents the residue: Rf-[0]p-CX″Y″-[0]m-CX′Y′-[0]n-CXY— wherein Rf represents a fluorinated alkyl residue which may or may not contain one or more catenary oxygen atoms, p, m and n are independently from each other either 1 or O, X, X′, X″, Y, Y′ and Y″ are independently from each other H, F, CF3, or C2F5 with the proviso that not all of X, X′, X″, Y, Y′ and Y″ are H; or A represents the residue: R—CFX— wherein X and R are independently selected from a hydrogen, a halogen, or an alkyl, alkenyl, cycloalkyl, or aryl residue, which may or may not contain one or more fluorine atoms and which may or may not contain one or more catenary oxygen atoms; wherein said at least one first oxidizing agent is a compound that can be converted, by action of the second oxidizing agent, into a reactive species capable of oxidizing the fluorinated alcohol.
    • 描述了制备氟化羧酸及其盐的方法,其包括将通式(A)的氟化醇:A-CH 2 -OH置于至少一种第一和至少一种第二氧化剂中以产生高度氟化的羧酸或 其通式(B)的盐:A-COO M +,其中M +表示阳离子,式(A)和(B)中的A相同,A表示残基:Rf- [0] p-CX“ Y“ - [0] m-CX'Y' - [0] n-CXY-其中Rf表示可以或可以不含有一个或多个链状氧原子的氟化烷基残基,p,m和n彼此独立地 1或O,X,X',X“,Y,Y'和Y”彼此独立地为H,F,CF 3或C 2 F 5,条件是不是全部X,X',X“,Y, Y'和Y“为H; 或A表示残基:R-CFX-,其中X和R独立地选自氢,卤素或烷基,烯基,环烷基或芳基残基,其可以含有或不含有一个或多个氟原子, 或者可以不包含一个或多个链状氧原子; 其中所述至少一种第一氧化剂是可以通过第二氧化剂的作用转化成能够氧化氟化醇的反应性物质的化合物。