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1. 发明授权

US07948016B1 Off-center deposition of organic semiconductor in an organic semiconductor device 有权
标题翻译：有机半导体在有机半导体器件中的偏心沉积
公开(公告)号：US07948016B1
公开(公告)日：2011-05-24
申请号：US12611556
申请日：2009-11-03
申请人： Scott M. Schnobrich , Robert S. Clough , Dennis E. Vogel , Michael E. Griffin
发明人： Scott M. Schnobrich , Robert S. Clough , Dennis E. Vogel , Michael E. Griffin
IPC分类号： H01L29/76 , H01L23/58
CPC分类号： H01L51/0005 , H01L51/0558
摘要： The present disclosure provides a method of making a thin film semiconductor device such as a transistor comprising the steps of: a) providing a substrate bearing first and second conductive zones which define a channel therebetween, where the channel does not border more than 75% of the perimeter of either conductive zone; and b) depositing a discrete aliquot of a solution comprising an organic semiconductor adjacent to or on the channel, where a majority of the solution is deposited to one side of the channel and not on the channel. In some embodiments of the present disclosure, the solution is deposited entirely to one side of the channel, not on the channel, and furthermore the solution is deposited in a band having a length that is less than the channel length. The present disclosure additionally provides thin film semiconductor devices such as a transistors.
摘要翻译：本公开内容提供了制造诸如晶体管的薄膜半导体器件的方法，包括以下步骤：a）提供承载第一和第二导电区域的衬底，其在其间限定通道，其中通道不超过75％任一导电区的周长; 以及b）沉积包含邻近于或在通道上的有机半导体的溶液的离散等分试样，其中大部分溶液沉积在通道的一侧，而不是在通道上。在本公开的一些实施例中，溶液完全沉积在通道的一侧，而不是在通道上，此外，溶液沉积在具有小于通道长度的长度的带中。本公开另外提供诸如晶体管的薄膜半导体器件。

2. 发明申请

US20110101311A1 OFF-CENTER DEPOSITION OF ORGANIC SEMICONDUCTOR IN AN ORGANIC SEMICONDUCTOR DEVICE 有权
标题翻译：有机半导体器件中有机半导体的非中心沉积
公开(公告)号：US20110101311A1
公开(公告)日：2011-05-05
申请号：US12611556
申请日：2009-11-03
申请人： Scott M. Schnobrich , Robert S. Clough , Dennis E. Vogel , Michael E. Griffin
发明人： Scott M. Schnobrich , Robert S. Clough , Dennis E. Vogel , Michael E. Griffin
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/0005 , H01L51/0558
摘要： The present disclosure provides a method of making a thin film semiconductor device such as a transistor comprising the steps of: a) providing a substrate bearing first and second conductive zones which define a channel therebetween, where the channel does not border more than 75% of the perimeter of either conductive zone; and b) depositing a discrete aliquot of a solution comprising an organic semiconductor adjacent to or on the channel, where a majority of the solution is deposited to one side of the channel and not on the channel. In some embodiments of the present disclosure, the solution is deposited entirely to one side of the channel, not on the channel, and furthermore the solution is deposited in a band having a length that is less than the channel length. The present disclosure additionally provides thin film semiconductor devices such as a transistors.
摘要翻译：本公开内容提供了制造诸如晶体管的薄膜半导体器件的方法，包括以下步骤：a）提供承载第一和第二导电区域的衬底，其在其间限定通道，其中通道不超过75％任一导电区的周长; 以及b）沉积包含邻近于或在通道上的有机半导体的溶液的离散等分试样，其中大部分溶液沉积在通道的一侧，而不是在通道上。在本公开的一些实施例中，溶液完全沉积在通道的一侧，而不是在通道上，此外，溶液沉积在具有小于通道长度的长度的带中。本公开另外提供诸如晶体管的薄膜半导体器件。

3. 发明申请

US20100140600A1 THIN FILM TRANSISTORS INCORPORATING INTERFACIAL CONDUCTIVE CLUSTERS 审中-公开
标题翻译：包含界面导电簇的薄膜晶体管
公开(公告)号：US20100140600A1
公开(公告)日：2010-06-10
申请号：US12596164
申请日：2008-05-13
申请人： Robert S. Clough , Tzu-Chen Lee , Dennis E. Vogel , Peiwang Zhu
发明人： Robert S. Clough , Tzu-Chen Lee , Dennis E. Vogel , Peiwang Zhu
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/0537 , B82Y10/00 , H01L51/0035 , H01L51/0036 , H01L51/0043 , H01L51/0048 , H01L51/0052 , H01L51/0525
摘要： A field effect transistor includes a thin layer of discontinuous conductive clusters between the gate dielectric and the active layer. The active layer can include an organic semiconductor or a blend of organic semiconductor and polymer. Metals, metal oxides, predominantly non-carbon metallic materials, and/or carbon nanotubes may be used to form the layer of conductive clusters. The conductive clusters improve transistor performance and also facilitate transistor fabrication.
摘要翻译：场效应晶体管包括在栅极电介质和有源层之间的不连续导电簇的薄层。有源层可以包括有机半导体或有机半导体和聚合物的共混物。可以使用金属，金属氧化物，主要是非碳金属材料和/或碳纳米管来形成导电簇的层。导电簇提高了晶体管的性能，并且还有助于晶体管的制造。

4. 发明授权

US07666968B2 Acene-thiophene copolymers with silethynly groups 失效
标题翻译：具有甲硅烷基乙炔基的乙烯 - 噻吩共聚物
公开(公告)号：US07666968B2
公开(公告)日：2010-02-23
申请号：US11379642
申请日：2006-04-21
申请人： Peiwang Zhu , Dennis E. Vogel , Christopher P. Gerlach
发明人： Peiwang Zhu , Dennis E. Vogel , Christopher P. Gerlach
IPC分类号： C08G75/00
CPC分类号： C08G61/126 , C08G61/122 , C08G2261/1424 , C08G2261/144 , C08G2261/15 , C08G2261/314 , C08G2261/3223 , C08G2261/3243 , C08G2261/411
摘要： Acene-thiophene copolymers with attached silylethynyl groups are provided that can be used in electronic devices. The copolymers are often soluble in common organic solvents and can be part of a coating composition.
摘要翻译：提供具有连接的甲硅烷基乙炔基的乙烯 - 噻吩共聚物，其可用于电子设备中。共聚物通常可溶于常用有机溶剂，并且可以是涂料组合物的一部分。

5. 发明授权

US07495251B2 Electronic devices containing acene-thiophene copolymers with silylethynyl groups 有权
标题翻译：含有甲硅烷基乙炔基的乙烯 - 噻吩共聚物的电子器件
公开(公告)号：US07495251B2
公开(公告)日：2009-02-24
申请号：US11379662
申请日：2006-04-21
申请人： Peiwang Zhu , Dennis E. Vogel , Tzu-Chen Lee , Christopher P. Gerlach
发明人： Peiwang Zhu , Dennis E. Vogel , Tzu-Chen Lee , Christopher P. Gerlach
IPC分类号： H01L29/08
CPC分类号： H01L51/0043 , B82Y10/00 , C08G61/126 , H01L51/0036 , H01L51/0037 , H01L51/0047 , H01L51/0094 , H01L51/0545 , H01L51/4253 , H01L51/5012 , H01L51/5048 , Y02E10/549 , Y02P70/521
摘要： Electronic devices that include an acene-thiophene copolymer and methods of making such electronic devices are described. More specifically, the acene-thiophene copolymer has attached silylethynyl groups. The copolymer can be used, for example, in a semiconductor layer or in a layer positioned between a first electrode and a second electrode.
摘要翻译：描述了包含乙烯 - 噻吩共聚物的电子器件和制造这种电子器件的方法。更具体地说，所述苯乙烯 - 噻吩共聚物具有连接的甲硅烷基乙炔基。共聚物可以用于例如半导体层或位于第一电极和第二电极之间的层中。

6. 发明申请

US20090004771A1 METHODS FOR MAKING ELECTRONIC DEVICES WITH A SOLUTION DEPOSITED GATE DIELECTRIC 有权
标题翻译：用于制造具有溶液沉积栅电介质的电子器件的方法
公开(公告)号：US20090004771A1
公开(公告)日：2009-01-01
申请号：US11771787
申请日：2007-06-29
申请人： James C. Novack , Dennis E. Vogel , Brian K. Nelson
发明人： James C. Novack , Dennis E. Vogel , Brian K. Nelson
IPC分类号： H01L21/336 , B05D3/06 , H01L51/40 , B05D5/12
CPC分类号： H01L51/0537 , H01L27/1292 , H01L29/78681 , H01L51/0005 , H01L51/0541 , H01L51/0545
摘要： A method of making an electronic device comprises solution depositing a dielectric composition onto a substrate and polymerizing the dielectric composition to form a gate dielectric. The dielectric composition comprises a polymerizable resin and zirconium oxide nanoparticles.
摘要翻译：制造电子器件的方法包括将电介质组合物沉积在衬底上并聚合电介质组合物以形成栅极电介质。电介质组合物包含可聚合树脂和氧化锆纳米颗粒。

7. 发明授权

US5939237A Top coats for shoot and run printing plates 失效
标题翻译：用于拍摄和运行印刷版的大衣
公开(公告)号：US5939237A
公开(公告)日：1999-08-17
申请号：US960175
申请日：1997-10-29
申请人： James P. Gardner, Jr. , Leonard J. Stulc , Richard A. Johnson , Dennis E. Vogel
发明人： James P. Gardner, Jr. , Leonard J. Stulc , Richard A. Johnson , Dennis E. Vogel
IPC分类号： B41C1/10 , B41N1/08 , B41N1/10 , G03F7/00 , G03F7/09 , G03F7/11 , G03C1/73
CPC分类号： G03F7/092 , B41C1/1041 , G03F7/11
摘要： A no-process printing plate forming photosensitive article having a protective top coat layer is described. The top coat layer may be a water soluble or dispersible polymer, sol, salt, or mixture thereof. The protective top coat layer may provide the no-process printing plate with protection from contamination during handling, improved suppression of odors during imaging, and improved roll-up performance on press. The hydrophilic protective top coat is removed on press by action of the fountain solution and/or ink.
摘要翻译：描述了具有保护性顶涂层的无法印版形成感光制品。顶涂层可以是水溶性或可分散的聚合物，溶胶，盐或其混合物。保护性顶涂层可以提供无处理印刷板在处理过程中防止污染，改善成像期间气味的抑制，以及改善印刷机上的卷起性能。通过润版液和/或油墨的作用，在压榨机上除去亲水性保护面漆。

8. 发明授权

US5506090A Process for making shoot and run printing plates 失效
标题翻译：制作拍摄和运行印版的过程
公开(公告)号：US5506090A
公开(公告)日：1996-04-09
申请号：US311510
申请日：1994-09-23
申请人： James P. Gardner, Jr. , Richard A. Johnson , Leonard J. Stulc , Dennis E. Vogel
发明人： James P. Gardner, Jr. , Richard A. Johnson , Leonard J. Stulc , Dennis E. Vogel
IPC分类号： B41C1/10 , B41N1/08 , B41N1/10 , G03F7/00 , G03F7/09 , G03F7/11 , G03C1/73
CPC分类号： G03F7/092 , B41C1/1041 , G03F7/11
摘要： A no-process printing plate forming photosensitive article having a protective top coat layer is described. The top coat layer may be a water soluble or dispersible polymer, sol, salt, or mixture thereof. The protective top coat layer may provide the no-process printing plate with protection from contamination during handling, improved suppression of odors during imaging, and improved roll-up performance on press. The hydrophilic protective top coat is removed on press by action of the fountain solution and/or ink.
摘要翻译：描述了具有保护性顶涂层的无法印版形成感光制品。顶涂层可以是水溶性或可分散的聚合物，溶胶，盐或其混合物。保护性顶涂层可以提供无处理印刷板在处理过程中防止污染，改善成像期间气味的抑制，以及改善印刷机上的卷起性能。通过润版液和/或油墨的作用，在压榨机上除去亲水性保护面漆。

9. 发明申请

US20120184770A1 METHODS OF PREPARING FLUORINATED CARBOXYLIC ACIDS AND THEIR SALTS 有权
标题翻译：制备氟化羧酸及其盐的方法
公开(公告)号：US20120184770A1
公开(公告)日：2012-07-19
申请号：US13497173
申请日：2010-10-21
申请人： Klaus Hintzer , Dennis E. Vogel , Miguel A. Guerra , Jolanta Ignatowska , Gerd-Volker Röschenthaler , Oleg Shyshkov , Kim M Vogel , Tilman C. Zipplies
发明人： Klaus Hintzer , Dennis E. Vogel , Miguel A. Guerra , Jolanta Ignatowska , Gerd-Volker Röschenthaler , Oleg Shyshkov , Kim M Vogel , Tilman C. Zipplies
IPC分类号： C07C51/16 , C07C51/285 , C07C51/305 , C07C51/23 , C25B3/02 , C07C51/27 , C07C51/29
CPC分类号： C07C51/27 , C07C53/21 , C07C59/135
摘要： A method for preparing fluorinated carboxylic acids and theirs salts is described comprising subjecting a fluorinated alcohol of the general formula (A): A-CH2—OH to at least one first and at least one second oxidizing agent to produce a highly fluorinated carboxylic acid or their salts of the general formula (B): A-COO M+, wherein M+ represents a cation and wherein A in formulas (A) and (B) is the same and A represents the residue: Rf-[0]p-CX″Y″-[0]m-CX′Y′-[0]n-CXY— wherein Rf represents a fluorinated alkyl residue which may or may not contain one or more catenary oxygen atoms, p, m and n are independently from each other either 1 or O, X, X′, X″, Y, Y′ and Y″ are independently from each other H, F, CF3, or C2F5 with the proviso that not all of X, X′, X″, Y, Y′ and Y″ are H; or A represents the residue: R—CFX— wherein X and R are independently selected from a hydrogen, a halogen, or an alkyl, alkenyl, cycloalkyl, or aryl residue, which may or may not contain one or more fluorine atoms and which may or may not contain one or more catenary oxygen atoms; wherein said at least one first oxidizing agent is a compound that can be converted, by action of the second oxidizing agent, into a reactive species capable of oxidizing the fluorinated alcohol.
摘要翻译：描述了制备氟化羧酸及其盐的方法，其包括将通式（A）的氟化醇：A-CH 2 -OH置于至少一种第一和至少一种第二氧化剂中以产生高度氟化的羧酸或其通式（B）的盐：A-COO M +，其中M +表示阳离子，式（A）和（B）中的A相同，A表示残基：Rf- [0] p-CX“ Y“ - [0] m-CX'Y' - [0] n-CXY-其中Rf表示可以或可以不含有一个或多个链状氧原子的氟化烷基残基，p，m和n彼此独立地 1或O，X，X'，X“，Y，Y'和Y”彼此独立地为H，F，CF 3或C 2 F 5，条件是不是全部X，X'，X“，Y， Y'和Y“为H; 或A表示残基：R-CFX-，其中X和R独立地选自氢，卤素或烷基，烯基，环烷基或芳基残基，其可以含有或不含有一个或多个氟原子，或者可以不包含一个或多个链状氧原子; 其中所述至少一种第一氧化剂是可以通过第二氧化剂的作用转化成能够氧化氟化醇的反应性物质的化合物。

10. 发明授权

US07608679B2 Acene-thiophene copolymers 有权
标题翻译：乙烯 - 噻吩共聚物
公开(公告)号：US07608679B2
公开(公告)日：2009-10-27
申请号：US11278222
申请日：2006-03-31
申请人： Peiwang Zhu , Tzu-Chen Lee , Dennis E. Vogel , Christopher P. Gerlach
发明人： Peiwang Zhu , Tzu-Chen Lee , Dennis E. Vogel , Christopher P. Gerlach
IPC分类号： C08G75/00
CPC分类号： H01L51/0043 , C08G61/126 , C08G2261/124 , C08G2261/1424 , C08G2261/314 , C08G2261/3223 , H01L51/0037
摘要： Acene-thiophene copolymers are provided that can be used as semiconductor materials in electronic devices. The acene-thiophene copolymers are of Formula I. In Formula I, Ac is a radical of an acene having 2 to 5 fused aromatic rings. The acene can be unsubstituted or substituted with a substituent selected from an alkyl, alkoxy, thioalkyl, aryl, aralkyl, halo, haloalkyl, hydroxyalkyl, heteroalkyl, alkenyl, or combinations thereof. Divalent group Q is selected from Formula III where each R1 and R2 group is independently selected from hydrogen, alkyl, alkoxy, thioalkyl, aryl, aralkyl, halo, haloalkyl, hydroxyalkyl, heteroalkyl, alkenyl, or combinations thereof. The subscript n in Formula I is an integer equal to at least 4. The asterisks in Formula I indicate the location of attachment to another group such as another repeat unit of formula —Ac-Q-.
摘要翻译：提供了可用作电子器件中的半导体材料的乙烯 - 噻吩共聚物。乙烯 - 噻吩共聚物具有式I化合物。在式I中，Ac是具有2至5个稠合芳环的苊基团。该烯可以是未取代的或被选自烷基，烷氧基，硫代烷基，芳基，芳烷基，卤代，卤代烷基，羟基烷基，杂烷基，烯基或其组合的取代基取代。二价基团Q选自式III，其中每个R 1和R 2基团独立地选自氢，烷基，烷氧基，硫代烷基，芳基，芳烷基，卤素，卤代烷基，羟基烷基，杂烷基，烯基或其组合。式I中的下标n是等于至少4的整数。式I中的星号表示连接到另一组的位置，例如式-Ac-Q-的另一个重复单元。

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