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2. 发明申请

US20100295019A1 NANOWIRE PHOTODETECTOR AND IMAGE SENSOR WITH INTERNAL GAIN 有权
标题翻译： NANOWIRE光电和图像传感器内部增益
公开(公告)号：US20100295019A1
公开(公告)日：2010-11-25
申请号：US12528701
申请日：2008-02-26
申请人： Deli Wang , Cesare Soci , Yu-Hwa Lo , Arthur Zhang , David Aplin , Lingquan Wang , Shadi Dayeh , Xin Yu Bao
发明人： Deli Wang , Cesare Soci , Yu-Hwa Lo , Arthur Zhang , David Aplin , Lingquan Wang , Shadi Dayeh , Xin Yu Bao
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L31/035227 , B82Y20/00 , H01L27/14643 , H01L31/035236
摘要： A practical ID nanowire photodetector with high gain that can be controlled by a radial electric field established in the ID nanowire. A ID nanowire photodetector device of the invention includes a nanowire that is individually contacted by electrodes for applying a longitudinal electric field which drives the photocurrent. An intrinsic radial electric field to the nanowire inhibits photo-carrier recombination, thus enhancing the photocurrent response. The invention further provides circuits of ID nanowire photodetectors, with groups of photodetectors addressed by their individual ID nanowires electrode contacts. The invention also provides a method for placement of ID nanostructures, including nanowires, with registration onto a substrate. A substrate is patterned with a material, e.g., photoresist, and trenches are formed in the patterning material at predetermined locations for the placement of ID nanostructures. The ID nanostructures are aligned in a liquid suspension, and then transferred into the trenches from the liquid suspension. Removal of the patterning material places the ID nanostructures in predetermined, registered positions on the substrate.
摘要翻译：具有高增益的实际的ID纳米线光电探测器，可以通过在ID纳米线中建立的径向电场来控制。本发明的ID纳米线光电探测器器件包括一个纳米线，该纳米线被电极单独接触，用于施加驱动光电流的纵向电场。对纳米线的固有径向电场抑制光载流子复合，从而增强光电流响应。本发明进一步提供ID纳米线光电检测器的电路，其具有由其各自的ID纳米线电极接触器寻址的光电探测器组。本发明还提供了一种用于将ID纳米结构（包括纳米线）放置在衬底上的方法。用诸如光致抗蚀剂的材料对衬底进行图案化，并且在图案化材料中在预定位置形成沟槽以放置ID纳米结构。将ID纳米结构在液体悬浮液中排列，然后从液体悬浮液转移到沟槽中。去除图案形成材料将ID纳米结构放置在基板上的预定的注册位置。

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