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1. 发明申请

US20060110299A1 Integrated multi-purpose getter for radio-frequency (RF) circuit modules 有权
标题翻译：用于射频（RF）电路模块的集成多用途吸气剂
公开(公告)号：US20060110299A1
公开(公告)日：2006-05-25
申请号：US10997252
申请日：2004-11-24
申请人： Dean Tran , Jerry Fang , Yoshio Saito , Mark Kintis , Chih Chang , Phu Tran
发明人： Dean Tran , Jerry Fang , Yoshio Saito , Mark Kintis , Chih Chang , Phu Tran
IPC分类号： B01J19/08
CPC分类号： H01L23/26 , H01L2924/0002 , H01L2924/00
摘要： An integrated getter structure and a method for its formation and installation in a circuit module enclosure (24). The integrated structure includes a hydrogen getter structure (10) and selected quantities of a material (20) that is formulated to provide both a particle getter function and an RF absorber function. In one embodiment, the material (20) is placed in discrete quantities over the hydrogen getter structure (10). In another embodiment, the hydrogen getter structure (10) is formed over a sheet of the material (20) and is provided with apertures (30) to expose the material (20).
摘要翻译：一种集成的吸气剂结构及其在电路模块外壳（24）中形成和安装的方法。集成结构包括吸氢剂结构（10）和选定量的材料（20），其被配制成提供颗粒吸气剂功能和RF吸收剂功能。在一个实施例中，材料（20）以氢离子吸收剂结构（10）的离散量放置。在另一个实施例中，吸气剂结构（10）形成在材料片（20）上并且设置有孔（30）以暴露材料（20）。

2. 发明授权

US07315069B2 Integrated multi-purpose getter for radio-frequency (RF) circuit modules 有权
标题翻译：用于射频（RF）电路模块的集成多用途吸气剂
公开(公告)号：US07315069B2
公开(公告)日：2008-01-01
申请号：US10997252
申请日：2004-11-24
申请人： Dean Tran , Jerry T. Fang , Yoshio Saito , Mark Kintis , Chih Chang , Phu H. Tran
发明人： Dean Tran , Jerry T. Fang , Yoshio Saito , Mark Kintis , Chih Chang , Phu H. Tran
IPC分类号： H01L29/72
CPC分类号： H01L23/26 , H01L2924/0002 , H01L2924/00
摘要： An integrated getter structure and a method for its formation and installation in a circuit module enclosure (24). The integrated structure includes a hydrogen getter structure (10) and selected quantities of a material (20) that is formulated to provide both a particle getter function and an RF absorber function. In one embodiment, the material (20) is placed in discrete quantities over the hydrogen getter structure (10). In another embodiment, the hydrogen getter structure (10) is formed over a sheet of the material (20) and is provided with apertures (30) to expose the material (20).
摘要翻译：一种集成的吸气剂结构及其在电路模块外壳（24）中形成和安装的方法。集成结构包括吸氢剂结构（10）和选定量的材料（20），其被配制成提供颗粒吸气剂功能和RF吸收剂功能。在一个实施例中，材料（20）以氢离子吸收剂结构（10）的离散量放置。在另一个实施例中，吸气剂结构（10）形成在材料片（20）上并且设置有孔（30）以暴露材料（20）。

3. 发明授权

US07476606B2 Eutectic bonding of ultrathin semiconductors 失效
标题翻译：超薄半导体的共晶键合
公开(公告)号：US07476606B2
公开(公告)日：2009-01-13
申请号：US11390772
申请日：2006-03-28
申请人： Dean Tran , Alan Hirschberg , Ha K. DeMarco , Luis Rochin , Thomas Chung , Mark Kintis , Steven J. Mass
发明人： Dean Tran , Alan Hirschberg , Ha K. DeMarco , Luis Rochin , Thomas Chung , Mark Kintis , Steven J. Mass
IPC分类号： H01L21/00 , H01L21/28
CPC分类号： H01L21/2007
摘要： Ultra-high speed semiconductors that are usually very thin and therefore very fragile still require connection to a circuit board and a heat transfer pathway. Ultra-high speed circuits and semiconductor devices are provided with a carrier plate formed on the backside of a wafer or substrate by a variety of deposition methods. The carrier plate is a series of metal layers, each being selected to enable the attachment of a relatively thick copper carrier plate to the backside of the substrate or wafer.
摘要翻译：通常非常薄且因此非常脆弱的超高速半导体仍需要连接到电路板和传热通路。超高速电路和半导体器件具有通过各种沉积方法形成在晶片或衬底的背面上的载体板。载体板是一系列金属层，每个金属层被选择为能够将相对厚的铜载体板附接到基板或晶片的背面。

4. 发明申请

US20070235744A1 Eutectic bonding of ultrathin semiconductors 失效
标题翻译：超薄半导体的共晶键合
公开(公告)号：US20070235744A1
公开(公告)日：2007-10-11
申请号：US11390772
申请日：2006-03-28
申请人： Dean Tran , Alan Hirschberg , Ha DeMarco , Luis Rochin , Thomas Chung , Mark Kintis , Steven Mass
发明人： Dean Tran , Alan Hirschberg , Ha DeMarco , Luis Rochin , Thomas Chung , Mark Kintis , Steven Mass
IPC分类号： H01L33/00
CPC分类号： H01L21/2007
摘要： Ultra-high speed semiconductors that are usually very thin and therefore very fragile still require connection to a circuit board and a heat transfer pathway. Ultra-high speed circuits and semiconductor devices are provided with a carrier plate formed on the backside of a wafer or substrate by a variety of deposition methods. The carrier plate is a series of metal layers, each being selected to enable the attachment of a relatively thick copper carrier plate to the backside of the substrate or wafer.
摘要翻译：通常非常薄且因此非常脆弱的超高速半导体仍需要连接到电路板和传热通路。超高速电路和半导体器件具有通过各种沉积方法形成在晶片或衬底的背面上的载体板。载体板是一系列金属层，每个金属层被选择为能够将相对厚的铜载体板附接到基板或晶片的背面。

5. 发明申请

US20070184285A1 Light weight x-ray radiation shield for electronics components and related fabrication method 审中-公开
标题翻译：电子元件轻量X射线防护罩及相关制造方法
公开(公告)号：US20070184285A1
公开(公告)日：2007-08-09
申请号：US11349609
申请日：2006-02-08
申请人： Dean Tran , Thomas Chung , Alan Hirschberg , Luis Rochin , Mark Kintis
发明人： Dean Tran , Thomas Chung , Alan Hirschberg , Luis Rochin , Mark Kintis
IPC分类号： B32B17/06 , B32B15/00
CPC分类号： B32B15/017 , B32B15/018 , C23C2/06 , C23C28/021 , C23C28/023 , C23C30/00 , C25D7/00 , H01R13/6581 , H01R13/6598
摘要： Protection against x-ray radiation is provided by a thin layer of a zinc-based alloy. An electronics component housing and lid are made to include a base of a lightweight alloy, a thin coating of the zinc-based alloy and an exterior finish metal layer. The zinc-based alloy provides excellent radiation protection and other advantages, without a significant weight penalty.
摘要翻译：通过锌基合金的薄层提供对x射线辐射的保护。电子部件壳体和盖子被制成为包括轻质合金的基底，锌基合金的薄涂层和外部精加工金属层。锌基合金提供优异的辐射防护等优点，而没有显着的重量损失。

6. 发明授权

US06613600B2 Resonant photodetector 有权
公开(公告)号：US06613600B2
公开(公告)日：2003-09-02
申请号：US09999815
申请日：2001-10-24
申请人： Dean Tran , Edward A. Rezek , Eric R. Anderson , William L. Jones
发明人： Dean Tran , Edward A. Rezek , Eric R. Anderson , William L. Jones
IPC分类号： H01L2100
CPC分类号： G02B6/4214 , H01L31/02161 , H01L31/02327
摘要： A resonant photodetector assembly (10) which uses multiple reflections of light within a photodetector (20) to convert input light into an electrical signal. The photodetector (20) includes a combination of generally planar semiconductor layers including a photodetector active layer (36) where light is converted into an electrical output. The photodetector (20) further includes a first outer electrical contact layer (34) and a second outer electrical contact layer (42). A waveguide (22) is positioned on the photodetector (20) and has a waveguide active layer (26) positioned between a pair of waveguide cladding layers (24, 28), a first end (30) for receiving input light and a second end (50) for reflecting the light. A reflector (32) is positioned on the second end (50) of the waveguide (22) at an angle relative to a line parallel to the substrate (14), where the reflector (32) reflects the light received by the first end (30) of the waveguide active layer (26) towards the photodetector (20). A reflector (38) is positioned on the second outer layer (42) of the photodetector (20) and provides a reflective surface for reflecting the light within the photodetector (20).

7. 发明授权

US06423575B1 Hydrogen gettering structure including silver-doped palladium layer to increase hydrogen gettering of module component and semiconductor device module having such structure, and methods of fabrication 有权
标题翻译：包含银掺杂钯层的氢吸除结构，以增加模块组件的氢吸气和具有这种结构的半导体器件模块，以及制造方法
公开(公告)号：US06423575B1
公开(公告)日：2002-07-23
申请号：US09917318
申请日：2001-07-27
申请人： Dean Tran , Jerry T. Fang
发明人： Dean Tran , Jerry T. Fang
IPC分类号： H01L2320
CPC分类号： H01L23/26 , H01L2224/32245 , H01L2224/73265 , H01L2924/0002 , H01L2924/1032 , H01L2924/1423 , H01L2924/3011 , H01L2924/00
摘要： Disclosed are hydrogen gettering structure (11) and use of such structure and methods of forming such structure. The hydrogen gettering structure (11) includes a titanium member (1) and a silver-doped palladium layer (3) on the titanium member (1), the silver assisting palladium to increase the hydrogen gettering. The silver-doped palladium can be deposited on the titanium member by sputtering. The hydrogen gettering structure (11) can be attached to a semiconductor module component (7) and incorporated in a semiconductor module (10) to increase hydrogen gettering, or can be included in other structure (e.g., nuclear reactor structure) where absorption or gettering of hydrogen is necessary or desired.
摘要翻译：公开了吸氢结构（11）以及使用这种结构和形成这种结构的方法。氢吸气结构（11）在钛构件（1）上包括钛构件（1）和银掺杂钯层（3），银助钯以增加吸氢性。可以通过溅射将银掺杂的钯沉积在钛构件上。氢吸气结构（11）可以附接到半导体模块组件（7）并且并入到半导体模块（10）中以增加吸氢性，或者可以包括在吸收或吸气的其它结构（例如，核反应堆结构）的氢是必需的或期望的。

8. 发明授权

US06252725B1 Semiconductor micro epi-optical components 有权
标题翻译：半导体微表面光学元件
公开(公告)号：US06252725B1
公开(公告)日：2001-06-26
申请号：US09498634
申请日：2000-02-07
申请人： Dean Tran , Eric R. Anderson , Ronald L. Strijek , Edward A. Rezek , Luis M. Rochin
发明人： Dean Tran , Eric R. Anderson , Ronald L. Strijek , Edward A. Rezek , Luis M. Rochin
IPC分类号： G02B702
CPC分类号： H01L31/18 , G02B6/122 , G02B6/42 , G02B6/4246 , G02B2006/12102 , G02B2006/12114 , G02B2006/12176 , H01L33/005
摘要： A method for fabricating a monolithic micro-optical component. The construction of the micro-optical components is accomplished by using standard semiconductor fabrication techniques. The method comprises the steps of depositing an etch stop layer (44) onto a semiconductor substrate (42); depositing an optical component layer (46) onto the etch stop layer (44); coating the entire surface of the optical component layer with a photoresist material; applying a photoresist mask (50) to the photoresist material on the optical component layer (46); selectively etching away the optical component layer (46) to form at least one optical column (52); forming a pedestal (54) for each of the optical columns (52) by selectively etching away the etch stop layer (44); and finally polishing each of the optical columns (52), thereby forming monolithic optical components (56). The method may optionally include the step of removing the photoresist mask from each of the optical columns prior to polishing the optical columns, as well as the step of depositing an antireflectivity coating onto each of the optical components.
摘要翻译：一种用于制造单片微光学部件的方法。微型光学部件的构造通过使用标准半导体制造技术来实现。该方法包括以下步骤：在半导体衬底（42）上沉积蚀刻停止层（44）; 在所述蚀刻停止层（44）上沉积光学部件层（46）; 用光致抗蚀剂材料涂覆光学部件层的整个表面; 将光致抗蚀剂掩模（50）施加到光学部件层（46）上的光致抗蚀剂材料上; 选择性地蚀刻掉光学部件层（46）以形成至少一个光学柱（52）; 通过选择性地蚀刻掉蚀刻停止层（44），为每个光学柱（52）形成基座（54）; 并最后对每个光学柱（52）进行抛光，由此形成单片光学部件（56）。该方法可以可选地包括在抛光光学柱之前从每个光学柱去除光致抗蚀剂掩模的步骤，以及在每个光学部件上沉积抗反射涂层的步骤。

9. 发明授权

US06187515B1 Optical integrated circuit microbench system 失效
标题翻译：光学集成电路微型系统
公开(公告)号：US06187515B1
公开(公告)日：2001-02-13
申请号：US09074188
申请日：1998-05-07
申请人： Dean Tran , Eric R. Anderson , Ronald L. Strijek , Edward A. Rezek
发明人： Dean Tran , Eric R. Anderson , Ronald L. Strijek , Edward A. Rezek
IPC分类号： G02B636
CPC分类号： G02B6/4214 , G02B6/423
摘要： The invention relates to an optical integrated circuit microbench system for accurately aligning optical fiber and waveguides to efficiently couple energy between optical devices. This is accomplished by using the anisotropic etch characteristics of III-V semiconductor materials in two orthogonal directions. One etch direction serves to provide a channel for precise fiber-positioning; the other direction, which is orthogonal provides a reflecting surface for directing the optical energy onto optical devices.
摘要翻译：本发明涉及一种用于精确对准光纤和波导以在光学器件之间有效耦合能量的光学集成电路微型平台系统。这是通过在两个正交方向上使用III-V半导体材料的各向异性蚀刻特性来实现的。一个蚀刻方向用于提供用于精确光纤定位的通道; 正交的另一方向提供用于将光能引导到光学装置上的反射表面。

10. 发明授权

US06172414B2 Apparatus and method for snap-on thermo-compression bonding 失效
标题翻译：用于卡扣热压接的装置和方法
公开(公告)号：US06172414B2
公开(公告)日：2001-01-09
申请号：US09067222
申请日：1998-04-28
申请人： Dean Tran , Eric R. Anderson , Ronald L. Strijek , Edward A. Rezek
发明人： Dean Tran , Eric R. Anderson , Ronald L. Strijek , Edward A. Rezek
IPC分类号： H01L2304
CPC分类号： H01L24/75 , H01L2224/75 , H01L2224/81141 , H01L2224/81193 , H01L2924/01033 , H01L2924/01079 , H01L2924/01082 , H01L2924/14 , Y10T29/49144 , Y10T29/49544
摘要： An interconnected apparatus for producing a low loss, reproducible electrical interconnection between a semiconductor device and a substrate includes a rod and rod receptor. The rod, generally cylindrically shaped, is attached to the semiconductor device and includes an outer circumferential wall which comes into contact with the rod receptor during a bonding process. A lip portion is formed on one end of the rod receptor for interlocking engagement with the rod. The rod receptor is plated on the substrate and includes a generally circularly shaped body which forms a centrally disposed well for receiving the rod. A lip portion is formed on one end or mouth of the rod receptor for interlocking engagement with the rod. When the rod and corresponding receptor are aligned and brought together, the rod deforms and interlocks with its corresponding rod receptor. A thermo-compression bonding process is utilized to bond the rod to the rod receptor, thereby producing a strong interlocking bond.
摘要翻译：用于在半导体器件和衬底之间产生低损耗，可再现的电互连的互连设备包括棒和棒接收器。通常为圆柱形的杆附接到半导体器件，并且包括在接合过程中与杆接收器接触的外周壁。唇形部分形成在杆接收器的一端上以与杆互锁接合。杆接收器被电镀在基底上，并且包括大致圆形的主体，其形成用于容纳杆的居中设置的孔。唇形部分形成在杆接收器的一端或口上，用于与棒互锁接合。当杆和相应的接收器对准并聚集在一起时，杆变形并与其相应的杆接收器互锁。利用热压接合方法将棒粘合到杆接收器，从而产生强的互锁键。

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