会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 6. 发明授权
    • Method of cleaning and conditioning plasma reaction chamber
    • 清洗和调理等离子体反应室的方法
    • US06350697B1
    • 2002-02-26
    • US09469286
    • 1999-12-22
    • Brett C. RichardsonDuane Outka
    • Brett C. RichardsonDuane Outka
    • H01L21302
    • H01J37/32477C23C16/4404H01J37/32862
    • A method for cleaning and conditioning interior surfaces of a plasma chamber in which substrates such as silicon wafers are processed. The method includes cleaning the chamber such as by a wet clean or in-situ plasma clean, introducing a conditioning gas into the chamber, energizing the conditioning gas into a plasma state, depositing a polymer coating on the interior surfaces and processing a substrate. The conditioning step can be performed without a substrate such as a wafer in the chamber and the processing step can be carried out without running conditioning wafers through the chamber prior to processing production wafers. In the case of a plasma chamber used for etching aluminum, the conditioning gas can include a fluorine-containing gas, a carbon-containing gas and a chlorine-containing gas.
    • 一种用于清洁和调节等离子体室内表面的方法,其中处理诸如硅晶片的衬底。 该方法包括例如通过湿式清洁或原位等离子体清洁来清洁室,将调节气体引入室中,使调节气体进入等离子体状态,在聚合物涂层上沉积聚合物涂层并处理基板。 调节步骤可以在没有诸如室内的晶片的基板的情况下进行,并且可以在处理生产晶片之前不经由室内运行调节晶片来执行处理步骤。 在用于蚀刻铝的等离子体室的情况下,调节气体可以包括含氟气体,含碳气体和含氯气体。
    • 9. 发明申请
    • Portable Coffee Brewing Device
    • 便携式咖啡冲泡装置
    • US20160360917A1
    • 2016-12-15
    • US15246598
    • 2016-08-25
    • Brett C. Richardson
    • Brett C. Richardson
    • A47J31/00A47J31/52A47J31/06A23F5/26A47J31/46
    • A47J31/005A23F5/26A47J31/0576A47J31/0626
    • A portable coffee brewing device includes a lid pivotally connected to an upper end of the container by a hinge and button. A heating element housing and an electrical component housing is connected to a lower end of the container. A drain is positioned in a bottom wall of the container and is fluidly connected to a heating element positioned within the heating element housing. The heating element is controlled by electrical components positioned in the electrical components housing. A drip tube is fluidly connected to the heating element and the lid. A single serve coffee holding device is positioned below the lid. When the container is filled with fluid and the heating element is powered, heated fluid is forced up the drip tube through the passageway in the lid and into the coffee grounds holding device in a continuous cycle. The device is connectable to an external power source.
    • 便携式咖啡冲泡装置包括通过铰链和按钮枢转地连接到容器的上端的盖子。 加热元件壳体和电气部件壳体连接到容器的下端。 排水管定位在容器的底壁中,并且流体地连接到位于加热元件壳体内的加热元件。 加热元件由位于电气部件壳体中的电气部件控制。 滴管与加热元件和盖子流体连接。 单一咖啡保持装置位于盖的下方。 当容器充满流体并且加热元件被供电时,加热的流体被迫通过盖子中的通道并且连续循环进入咖啡渣保持装置中。 该设备可连接到外部电源。
    • 10. 发明授权
    • Plasma cleaning of deposition chamber residues using duo-step wafer-less auto clean method
    • 使用双步无晶圆自动清洁方法对沉积室残留物进行等离子体清洁
    • US07028696B2
    • 2006-04-18
    • US10139042
    • 2002-05-03
    • Brett C. RichardsonVincent Wong
    • Brett C. RichardsonVincent Wong
    • B08B7/04
    • H01J37/32862B08B3/06B08B7/0035C23C16/4405H01J37/32935H01J37/32963Y10S438/905
    • A method involving plasma cleaning of deposit residues in process chamber using duo-step wafer-less auto clean method is detailed. Specifically, the method involves cleaning the processing chamber by flowing a first gaseous composition with at least about 75% of fluorine-containing compound of the formula XyFz, into a processing chamber and then forming a first etchant plasma which removes silicon and silicon based byproducts from the interior surfaces of the processing chamber. The method then involves flowing a second gaseous composition into the processing chamber with a composition of at least about 50% O2 and forming a plasma from the second gaseous composition to provide a second etchant plasma which removes carbon and carbon based byproducts from the interior surfaces of the processing chamber. A system configured to execute the two step cleaning process is also provided.
    • 详细介绍了使用二步无硅自动清洁方法对处理室中沉积物残留物进行等离子体清洗的方法。 具体地说,该方法包括通过将具有至少约75%的通式为X Y Y Z Z的含氟化合物的第一气态组合物流入到 然后形成第一蚀刻剂等离子体,其从处理室的内表面去除硅和硅基副产物。 该方法然后包括使第二气态组合物以至少约50%O 2 2的组成流入处理室并从第二气态组合物形成等离子体以提供第二蚀刻剂等离子体,其除去碳和 来自处理室的内表面的基于碳的副产物。 还提供了被配置为执行两步清洁处理的系统。