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1. 发明授权

US5846373A Method for monitoring process endpoints in a plasma chamber and a process monitoring arrangement in a plasma chamber 失效
标题翻译：用于监测等离子体室中的过程端点和等离子体室中的过程监控装置的方法
公开(公告)号：US5846373A
公开(公告)日：1998-12-08
申请号：US671918
申请日：1996-06-28
申请人： David R. Pirkle , Randall S. Mundt , William Harshbarger
发明人： David R. Pirkle , Randall S. Mundt , William Harshbarger
IPC分类号： C23C16/44 , C23C16/50 , C23C16/52 , G01B11/06 , H01J37/32 , C23C1/08 , C23C1/00
CPC分类号： H01J37/32935 , C23C16/4405 , C23C16/50 , C23C16/52 , G01B11/0683 , H01J37/32963 , H01J37/32972
摘要： Thin film deposition process endpoints and in situ-clean process endpoints are monitored using a single light filter and photodetector arrangement. The light filter has a peak transmission proximate a characteristic wavelength of the deposition plasma, such as Si, and one of the plurality of reaction products, such as NO, in the plasma chamber during in-situ cleaning. Emissions passing through the filter are converted to voltage measurements by a photodetector. In deposition endpoint monitoring, emission intensity of the Si emissions reflected off the surface of the substrate oscillate as deposition thickness increases, with each oscillation corresponding to a definite increase in thickness of the film. The endpoint of the deposition is reached when the number of oscillations in signal intensity versus time corresponds to a desired film thickness. Alternatively, a deposition rate for the film is calculated from the oscillation frequency of emissions reflected off the substrate. Endpoint occurs when the integrated deposition rate corresponds to the desired film thickness. In in-situ clean endpoint monitoring, the endpoint of the process is reached when emission intensity of the particular reaction product decreases to a substantially steady state value, meaning that the reaction is complete.
摘要翻译：使用单个光滤波器和光电检测器布置来监测薄膜沉积工艺端点和原位清洁工艺端点。光过滤器在原位清洁期间在等离子体室中具有接近沉积等离子体的特征波长（诸如Si）和多个反应产物（例如NO）中的一个的峰值传输。通过滤波器的发射通过光电检测器转换成电压测量。在沉积端点监测中，随着沉积厚度的增加，从衬底的表面反射的Si发射的发射强度振荡，每个振荡对应于膜的厚度的确定的增加。当信号强度对时间的振荡次数对应于期望的膜厚度时，达到沉积的终点。或者，根据从衬底反射的发射的振荡频率计算膜的沉积速率。当积分沉积速率对应于所需的膜厚度时，发生端点。在原位清洁端点监测中，当特定反应产物的发射强度降低到基本上稳定的状态值时，达到该过程的终点，意味着反应完成。

2. 发明授权

US5647953A Plasma cleaning method for removing residues in a plasma process chamber 失效
标题翻译：用于去除等离子体处理室中残留物的等离子体清洁方法
公开(公告)号：US5647953A
公开(公告)日：1997-07-15
申请号：US577340
申请日：1995-12-22
申请人： Larry Williams , David R. Pirkle , William Harshbarger , Timothy Ebel
发明人： Larry Williams , David R. Pirkle , William Harshbarger , Timothy Ebel
IPC分类号： B08B7/00 , C23C16/44 , C23C16/00
CPC分类号： B08B7/0035 , C23C16/4404 , C23C16/4405 , Y10S438/905
摘要： A method for cleaning and conditioning a plasma processing chamber wherein oxide residues have been previously formed on interior surfaces of the chamber. The method includes introducing a cleaning gas including a fluorine-based gas into the chamber followed by performing a plasma cleaning step. The plasma cleaning step is performed by activating the cleaning gas mixture and forming a plasma cleaning gas, contacting interior surfaces of the chamber with the plasma cleaning gas and removing oxide residues on the interior surfaces. The cleaning step is followed by coating the interior surfaces with silicon dioxide to adhere loose particles to the interior surfaces and a conditioning step wherein uncoated interior surfaces are treated to remove fluorine therefrom. An advantage of the cleaning and conditioning method is that it is not necessary to open the chamber. Also, it is possible to remove oxide residues during the cleaning step and remove fluorine remaining after the cleaning step during the conditioning step. The conditioning step is carried out by introducing a hydrogen-containing gas into the chamber as a purge gas or the chamber can be pressurized by the hydrogen-containing gas followed by evacuating the chamber.
摘要翻译：一种用于清洁和调节等离子体处理室的方法，其中先前在室的内表面上形成氧化物残留物。该方法包括将包括氟基气体的清洁气体引入室中，然后执行等离子体清洗步骤。通过激活清洁气体混合物并形成等离子体清洁气体，使室的内表面与等离子体清洁气体接触并除去内表面上的氧化物残余物来进行等离子体清洗步骤。清洁步骤之后，用二氧化硅涂覆内表面以将松散的颗粒粘附到内表面，以及调节步骤，其中处理未涂覆的内表面以从其中除去氟。清洁和调节方法的优点是不需要打开室。此外，在清洁步骤期间可以除去氧化物残留物，并且在调节步骤期间除去清洁步骤后剩余的氟。调节步骤通过将含氢气体作为吹扫气体引入室中，或者可以通过含氢气体对室进行加压，然后抽空室来进行。

3. 发明申请

US20070062454A1 METHOD FOR DECHUCKING A SUBSTRATE 审中-公开
标题翻译：用于去除衬底的方法
公开(公告)号：US20070062454A1
公开(公告)日：2007-03-22
申请号：US11555981
申请日：2006-11-02
申请人： QUANYUAN SHANG , William Harshbarger , Robert Greene , Ichiro Shimizu
发明人： QUANYUAN SHANG , William Harshbarger , Robert Greene , Ichiro Shimizu
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01L21/68742 , C23C16/458
摘要： A substrate support assembly and method for dechucking a substrate is provided. In one embodiment, a support assembly includes a substrate support having a support surface, a first set of lift pins and one or more other lift pins movably disposed through the substrate support. The first set of lift pins and the one or more lift pins project from the support surface when the pins are in an actuated position. When in the actuated position, the first set of lift pins project a longer distance from the support surface than the one or more other lift pins. In another aspect of the invention, a method for dechucking a substrate from a substrate support is provided. In one embodiment, the method includes the steps of projecting a first set of lift pins a first distance above a surface of a substrate support, and projecting a second set of lift pins a second distance above the surface of the substrate support that is less than the first distance.
摘要翻译：提供了一种用于对基板进行脱扣的基板支撑组件和方法。在一个实施例中，支撑组件包括具有支撑表面的基板支撑件，第一组提升销和可移动地设置穿过基板支撑件的一个或多个其他提升销。当销处于致动位置时，第一组提升销和一个或多个提升销从支撑表面突出。当处于致动位置时，第一组提升销与支撑表面比一个或多个其他提升销突出较长的距离。在本发明的另一方面，提供了一种用于从基板支撑件去除基板的方法。在一个实施例中，该方法包括以下步骤：将第一组提升销投影在衬底支撑件的表面之上的第一距离处，并且将第二组提升销投影在衬底支撑件的表面上方的第二距离处，该第二组提升销小于第一个距离。

4. 发明申请

US20080087960A1 Low Temperature Process for TFT Fabrication 有权
标题翻译： TFT制造的低温工艺
公开(公告)号：US20080087960A1
公开(公告)日：2008-04-17
申请号：US11946040
申请日：2007-11-27
申请人： Mark Hsiao , Dong-Kil Yim , Takako Takehara , Quanyuan Shang , William Harshbarger , Woong-Kwon Kim , Duk-Chul Yun , Youn-Gyung Chang
发明人： Mark Hsiao , Dong-Kil Yim , Takako Takehara , Quanyuan Shang , William Harshbarger , Woong-Kwon Kim , Duk-Chul Yun , Youn-Gyung Chang
IPC分类号： H01L29/786 , H01L21/441
CPC分类号： H01L29/66765 , H01L29/4908 , H01L29/78669 , H01L29/78678
摘要： Method of fabricating a thin-film transistor (TFT) in which a gate metal is deposited onto a substrate in order to form the gate of the thin-film transistor. The substrate may be an insulative substrate or a color filter. In a first method, the gate metal is subjected to an H2 plasma. After subjecting the gate metal to an H2 plasma, the gate insulating film is deposited onto the gate. In a second method, first and second layers of gate insulating film are respectively deposited on the gate at a first and second deposition rates. One layer is deposited under H2 or argon dilution conditions and has improved insulating conditions while the other layer serves to lower the overall compressive stress of the dual layer gate insulator. In a third method, an n+ silicon film is formed on a substrate by maintaining a flow of silane, phosphine and hydrogen gas into a processing chamber at substrate temperatures of about 300° C. or less.
摘要翻译：制造薄膜晶体管（TFT）的方法，其中栅极金属沉积到衬底上以形成薄膜晶体管的栅极。衬底可以是绝缘衬底或滤色器。在第一种方法中，栅极金属经受H 2 H 2等离子体。在栅极金属经受H 2等离子体后，栅极绝缘膜沉积在栅极上。在第二种方法中，第一和第二栅极绝缘膜层分别以第一和第二沉积速率沉积在栅极上。一层沉积在H 2 N或氩稀释条件下，并具有改善的绝缘条件，而另一层用于降低双层栅极绝缘体的整体压应力。在第三种方法中，通过在约300℃或更低的衬底温度下保持硅烷，膦和氢气流入处理室，在衬底上形成n + +硅膜。

5. 发明申请

US20050233155A1 Process for controlling thin film uniformity and products produced thereby 审中-公开
公开(公告)号：US20050233155A1
公开(公告)日：2005-10-20
申请号：US11147746
申请日：2005-06-08
申请人： Tae Won , Takako Takehara , William Harshbarger
发明人： Tae Won , Takako Takehara , William Harshbarger
IPC分类号： C23C16/40 , C23C16/458 , C23C16/46 , H01L21/312 , H01L21/316 , C23C16/00 , B32B9/04
CPC分类号： C23C16/401 , C23C16/4586 , C23C16/46 , Y10T428/26
摘要： Processes for controlling thickness uniformity of thin organosilicate films as they are deposited on a substrate, and as they finally result. During deposition of the film, which may be accomplished by CVD, PECVD, rapid thermal processing or the like, the substrate temperature is controlled to establish a temperature profile particularly suited to the extreme temperature sensitivities of the deposition rates of organosilicate films such as those deposited from TEOS as a source material.

6. 发明申请

US20060030088A1 Shadow frame with cross beam for semiconductor equipment 有权
公开(公告)号：US20060030088A1
公开(公告)日：2006-02-09
申请号：US11248385
申请日：2005-10-11
申请人： Sakae Tanaka , Qunhua Wang , Sanjay Yadav , Quanyuan Shang , William Harshbarger
发明人： Sakae Tanaka , Qunhua Wang , Sanjay Yadav , Quanyuan Shang , William Harshbarger
IPC分类号： H01L21/00
CPC分类号： C23C16/042 , C23C16/4585 , C23C16/4586
摘要： A shadow frame and framing system for semiconductor fabrication equipment comprising a rectangular frame having four edges, the edges forming an interior lip with a top surface and an bottom engagement surface; and a cross beam disposed between at least two edges of the frame, the cross beam having a top surface and a bottom engagement surface, the engagement surface of the cross beam configured to be flush with the engagement surface of the lip; wherein one or more of the engagement surfaces are configured to cover metal interconnect bonding areas on a carrier disposed below the frame. The shadow frame is particularly useful in plasma enhanced chemical vapor deposition (PECVD) applications used to make active matrix liquid crystal displays (AMLCDs) and solar cells.

7. 发明授权

US5911833A Method of in-situ cleaning of a chuck within a plasma chamber 失效
标题翻译：在等离子体室内原位清洁卡盘的方法
公开(公告)号：US5911833A
公开(公告)日：1999-06-15
申请号：US784852
申请日：1997-01-15
申请人： Dean Denison , William Harshbarger , Anwar Husain , C. Robert Koemtzopoulos , Felix Kozakevich , David Trussell
发明人： Dean Denison , William Harshbarger , Anwar Husain , C. Robert Koemtzopoulos , Felix Kozakevich , David Trussell
IPC分类号： B08B7/00 , C23C16/44 , H01L21/00 , H01Q1/36 , B44C1/22
CPC分类号： H01L21/67017 , B08B7/0035 , C23C16/4405 , H01J37/32862 , H01Q1/366 , Y10S438/905
摘要： A method for in-situ cleaning of a chuck that bears a semiconductor wafer in a semiconductor manufacturing machine maintains a processing chamber in a sealed condition with the chuck inside the chamber. A wafer bearing surface of the chuck is exposed upon determining that the chuck requires a cleaning. A cleaning gas is then injected into the chamber and RF power is applied to the chamber to create a plasma that cleans the wafer bearing surface. Since the processing chamber is maintained in a sealed condition during the in-situ cleaning of the chuck, the time required to clean the chuck and prepare the chamber for continued production runs is greatly reduced.
摘要翻译：用于在半导体制造机器中承载半导体晶片的卡盘的原位清洁方法将处理室保持在室内的卡盘的密封状态。确定卡盘需要清洁时，卡盘的晶片承载表面露出。然后将清洁气体注入到室中，并且将RF功率施加到室以产生清洁晶片承载表面的等离子体。由于在卡盘的原位清洁期间处理室保持密封状态，因此大大减少了清洁卡盘所需的时间并且准备用于继续生产的运行的室。

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