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1. 发明授权

US09443753B2 Apparatus for controlling the flow of a gas in a process chamber 有权
标题翻译：用于控制处理室中气体流动的装置
公开(公告)号：US09443753B2
公开(公告)日：2016-09-13
申请号：US13015106
申请日：2011-01-27
申请人： David Palagashvili , Michael D. Willwerth , Jingbao Liu
发明人： David Palagashvili , Michael D. Willwerth , Jingbao Liu
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , H01J37/32 , H01L21/67 , H01L21/687
CPC分类号： H01L21/68735 , C23C16/4412 , C23C16/45591 , C23C16/4585 , H01J37/3244 , H01J37/32633 , H01J37/32642 , Y10T137/85938
摘要： Apparatus for controlling the flow of a gas in a process chamber is provided herein. In some embodiments, an apparatus for controlling the flow of a gas in a process chamber having a processing volume within the process chamber disposed above a substrate support and a pumping volume within the process chamber disposed below the substrate support may include an annular plate surrounding the substrate support proximate a level of a substrate support surface of the substrate support, wherein the annular plate extends radially outward toward an inner peripheral surface of the process chamber to define a uniform gap between an outer edge of the annular plate and the inner peripheral surface, wherein the uniform gap provides a uniform flow path from the processing volume to the pumping volume.
摘要翻译：本文提供了用于控制处理室中气体流动的装置。在一些实施例中，用于控制处理室中的气体流动的装置，其具有设置在基板支撑件上方的处理室内的处理容积，以及设置在基板支撑件下方的处理室内的泵送体积可包括环形板衬底支撑件，靠近衬底支撑件的衬底支撑表面的水平面，其中环形板朝向处理室的内周表面径向向外延伸，以在环形板的外边缘和内周表面之间限定均匀的间隙，其中均匀间隙提供从处理体积到泵送体积的均匀流动路径。

2. 发明授权

US08840725B2 Chamber with uniform flow and plasma distribution 有权
标题翻译：具有均匀流动和等离子体分布的腔室
公开(公告)号：US08840725B2
公开(公告)日：2014-09-23
申请号：US12884978
申请日：2010-09-17
申请人： David Palagashvili , Michael D. Willwerth , Alex Erenstein , Jingbao Liu
发明人： David Palagashvili , Michael D. Willwerth , Alex Erenstein , Jingbao Liu
IPC分类号： C23C16/455 , C23C16/50 , C23C16/509 , C23F1/00 , H01L21/306 , H01J37/32 , C23C16/06 , C23C16/22
CPC分类号： H01J37/32449 , H01J37/32091 , H01J37/32816 , H01J37/32844
摘要： Embodiments of the present invention provide a recursive liner system that facilitates providing more uniform flow of gases proximate the surface of a substrate disposed within an apparatus for processing a substrate (e.g., a process chamber). In some embodiments, a recursive liner system may include an outer liner having an outer portion configured to line the walls of a process chamber, a bottom portion extending inward from the outer portion, and a lip extending up from the bottom portion to define a well; and an inner liner having a lower portion configured to be at least partially disposed in the well to define, together with the outer liner, a recursive flow path therebetween.
摘要翻译：本发明的实施例提供了一种循环衬垫系统，其有助于提供更接近于布置在用于处理衬底（例如，处理室）的设备内的衬底的表面的气体的均匀流动。在一些实施例中，递归衬垫系统可以包括具有外部部分的外部衬套，所述外部部分被配置为对准处理室的壁，从外部向内延伸的底部，以及从底部向上延伸以限定孔 ; 以及内衬，其具有被配置为至少部分地设置在所述孔中的下部，以与所述外衬垫一起限定其间的递归流动路径。

3. 发明授权

US08270141B2 Electrostatic chuck with reduced arcing 有权
标题翻译：静电卡盘减少电弧
公开(公告)号：US08270141B2
公开(公告)日：2012-09-18
申请号：US12884967
申请日：2010-09-17
申请人： Michael D. Willwerth , David Palagashvili , Douglas A. Buchberger, Jr. , Michael G. Chafin
发明人： Michael D. Willwerth , David Palagashvili , Douglas A. Buchberger, Jr. , Michael G. Chafin
IPC分类号： H02T23/00
CPC分类号： H01L21/6833 , Y10T279/23
摘要： Embodiments of electrostatic chucks are provided herein. In some embodiments, an electrostatic chuck may include a body having a notched upper peripheral edge, defined by a first surface perpendicular to a body sidewall and a stepped second surface disposed between the first surface and a body upper surface, and a plurality of holes disposed through the body along the first surface; a plurality of fasteners disposed through the plurality of holes to couple the body to a base disposed beneath the body; a dielectric member disposed above the body upper surface to electrostatically retain a substrate; an insulator ring disposed about the body within the notched upper peripheral edge and having a stepped inner sidewall that mates with the stepped second surface to define a non-linear interface therebetween; and an edge ring disposed over the insulator ring, the non-linear interface limiting arcing between the edge ring and the fastener.
摘要翻译：本文提供了静电卡盘的实施例。在一些实施例中，静电吸盘可以包括具有切口的上周边边缘的主体，该顶部边缘由垂直于主体侧壁的第一表面和设置在第一表面和主体上表面之间的阶梯状第二表面限定，沿着第一面穿过身体; 多个紧固件，其布置成穿过所述多个孔，以将所述主体连接到设置在所述主体下方的底座; 设置在所述主体上表面上方的电介质部件，以静电保持基板; 绝缘体环，其围绕所述主体设置在所述凹口的上周边边缘内并且具有与所述阶梯状的第二表面配合的阶梯状的内侧壁，以在其间界定非线性界面; 以及设置在所述绝缘体环上的边缘环，所述非线性界面限制所述边缘环和所述紧固件之间的电弧。

4. 发明申请

US20110068082A1 METHOD OF PROCESSING A WORKPIECE IN A PLASMA REACTOR WITH INDEPENDENT WAFER EDGE PROCESS GAS INJECTION 失效
标题翻译：在具有独立波形边缘过程气体注入的等离子体反应器中处理工件的方法
公开(公告)号：US20110068082A1
公开(公告)日：2011-03-24
申请号：US12954087
申请日：2010-11-24
申请人： Dan Katz , David Palagashvili , Michael D. Willwerth , Valentin N. Todorow , Alexander M. Paterson
发明人： Dan Katz , David Palagashvili , Michael D. Willwerth , Valentin N. Todorow , Alexander M. Paterson
IPC分类号： C23F1/00
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/3065
摘要： The disclosure concerns a method of processing a workpiece or in a plasma reactor chamber, using independent gas injection at the wafer edge.
摘要翻译：本公开涉及在晶片边缘处使用独立气体注入来处理工件或在等离子体反应器室中的方法。

5. 发明申请

US20090236315A1 SHIELDED LID HEATER ASSEMBLY 有权
标题翻译：屏蔽式加热器总成
公开(公告)号：US20090236315A1
公开(公告)日：2009-09-24
申请号：US12408348
申请日：2009-03-20
申请人： Michael D. Willwerth , David Palagashvili , Valentin N. Todorow , Stephen Yuen
发明人： Michael D. Willwerth , David Palagashvili , Valentin N. Todorow , Stephen Yuen
IPC分类号： B44C1/22 , H05B6/10 , C23C16/46 , C23C14/34
CPC分类号： H01J37/321 , C23C14/22 , C23C16/44 , H01F21/12 , H01J37/32321 , H01J37/32522 , H01J37/32623 , H01J37/32935 , H01J2237/327 , H01J2237/334 , H01L21/67017 , H01L21/67069 , H05B6/02 , H05B6/108
摘要： A shielded lid heater lid heater suitable for use with a plasma processing chamber, a plasma processing chamber having a shielded lid heater and a method for plasma processing are provided. The method and apparatus enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, a shielded lid heater is provided that includes an aluminum base and RF shield sandwiching a heater element.
摘要翻译：提供适用于等离子体处理室的屏蔽盖加热器盖加热器，具有屏蔽盖加热器的等离子体处理室和等离子体处理方法。该方法和装置增强等离子体处理室内的等离子体位置的位置控制，并且可用于蚀刻，沉积，植入和热处理系统以及其它需要等离子体位置控制的应用中。在一个实施例中，提供了一种屏蔽盖加热器，其包括铝基座和夹持加热器元件的RF屏蔽。

6. 发明申请

US20090057269A1 Method of processing a workpiece in a plasma reactor with independent wafer edge process gas injection 有权
标题翻译：在具有独立晶片边缘工艺气体注入的等离子体反应器中处理工件的方法
公开(公告)号：US20090057269A1
公开(公告)日：2009-03-05
申请号：US11899613
申请日：2007-09-05
申请人： Dan Katz , David Palagashvili , Michael D. Willwerth , Valentin N. Todorow , Alexander M. Paterson
发明人： Dan Katz , David Palagashvili , Michael D. Willwerth , Valentin N. Todorow , Alexander M. Paterson
IPC分类号： C03C25/68
CPC分类号： H01L21/67069 , H01J37/3244 , H01J37/32449 , H01L21/3065
摘要： The disclosure concerns a method of processing a workpiece or in a plasma reactor chamber, using independent gas injection at the wafer edge.
摘要翻译：本公开涉及在晶片边缘处使用独立气体注入来处理工件或在等离子体反应器室中的方法。

7. 发明授权

US08757603B2 Low force substrate lift 有权
标题翻译：低力基板升降
公开(公告)号：US08757603B2
公开(公告)日：2014-06-24
申请号：US12910542
申请日：2010-10-22
申请人： Michael D. Willwerth , David Palagashvili
发明人： Michael D. Willwerth , David Palagashvili
IPC分类号： B23P19/00
CPC分类号： H01L21/68742
摘要： Apparatus for lifting substrates from substrate supports are provided herein. In some embodiments, a substrate lift may include: a substrate support having a plurality of lift pins movably disposed through the substrate support to selectively raise and lower a substrate; an actuator coupled to the plurality of lift pins to control the position of the plurality of lift pins, wherein the actuator has a first port for receiving air at a first pressure to cause the actuator to extend the plurality of lift pins and a second port for receiving air at a second pressure to cause the actuator to retract the plurality of lift pins; and a pressure regulator coupled to the actuator to reduce the first pressure to a magnitude that is less than that of the second pressure.
摘要翻译：本文提供了用于从衬底支撑件提升衬底的装置。在一些实施例中，基板提升可以包括：基板支撑件，其具有可移动地设置穿过基板支撑件以选择性地升高和降低基板的多个提升销; 联接到所述多个提升销的致动器以控制所述多个提升销的位置，其中所述致动器具有用于在第一压力下接收空气的第一端口，以使所述致动器延伸所述多个提升销和用于在第二压力下接收空气以使致动器缩回多个提升销; 以及联接到所述致动器的压力调节器，以将所述第一压力减小到小于所述第二压力的量值。

8. 发明申请

US20090056629A1 Cathode liner with wafer edge gas injection in a plasma reactor chamber 有权
标题翻译：阴极衬管，在等离子体反应器腔中注入晶圆边缘气体
公开(公告)号：US20090056629A1
公开(公告)日：2009-03-05
申请号：US11899614
申请日：2007-09-05
申请人： Dan Katz , David Palagashvili , Michael D. Willwerth , Valentin N. Todorow , Alexander M. Paterson
发明人： Dan Katz , David Palagashvili , Michael D. Willwerth , Valentin N. Todorow , Alexander M. Paterson
IPC分类号： C23C16/513
CPC分类号： H01L21/32137 , H01J37/3244 , H01J37/32642 , H01L21/3065 , H01L2924/19042
摘要： The disclosure concerns a wafer support for use in a plasma reactor chamber, in which the wafer support has a wafer edge gas injector adjacent and surrounding the wafer edge.
摘要翻译：本公开涉及用于等离子体反应器室中的晶片支撑件，其中晶片支撑件具有与晶片边缘相邻并且围绕晶片边缘的晶片边缘气体注入器。

9. 发明申请

US20090004870A1 METHODS FOR HIGH TEMPERATURE ETCHING A HIGH-K MATERIAL GATE STRUCTURE 失效
标题翻译：高温蚀刻高K材料门结构的方法
公开(公告)号：US20090004870A1
公开(公告)日：2009-01-01
申请号：US12146303
申请日：2008-06-25
申请人： Wei Liu , Eiichi Matsusue , Meihua Shen , Shashank Deshmukh , Anh-Kiet Quang Phan , David Palagashvili , Michael D. Willwerth , Jong I. Shin , Barrett Finch , Yohei Kawase
发明人： Wei Liu , Eiichi Matsusue , Meihua Shen , Shashank Deshmukh , Anh-Kiet Quang Phan , David Palagashvili , Michael D. Willwerth , Jong I. Shin , Barrett Finch , Yohei Kawase
IPC分类号： H01L21/3065
CPC分类号： H01L21/3065 , H01L21/28282 , H01L21/31116 , H01L21/31122 , H01L21/32137
摘要： Methods for etching high-k material at high temperatures are provided. In one embodiment, a method etching high-k material on a substrate may include providing a substrate having a high-k material layer disposed thereon into an etch chamber, forming a plasma from an etching gas mixture including at least a halogen containing gas into the etch chamber, maintaining a temperature of an interior surface of the etch chamber in excess of about 100 degree Celsius while etching the high-k material layer in the presence of the plasma, and maintaining a substrate temperature between about 100 degree Celsius and about 250 degrees Celsius while etching the high-k material layer in the presence of the plasma.
摘要翻译：提供了在高温下蚀刻高k材料的方法。在一个实施例中，在衬底上蚀刻高k材料的方法可以包括提供其上设置有高k材料层的衬底到蚀刻室中，从包括至少含卤素气体的蚀刻气体混合物形成等离子体到蚀刻室，在蚀刻室的内部表面的温度保持超过约100摄氏度，同时在存在等离子体的同时蚀刻高k材料层，并将衬底温度保持在约100摄氏度至约250度之间摄氏度，同时在存在等离子体的同时蚀刻高k材料层。

10. 发明授权

US09362148B2 Shielded lid heater assembly 有权
公开(公告)号：US09362148B2
公开(公告)日：2016-06-07
申请号：US13793501
申请日：2013-03-11
申请人： Michael D. Willwerth , David Palagashvili , Valentin N. Todorow , Stephen Yuen
发明人： Michael D. Willwerth , David Palagashvili , Valentin N. Todorow , Stephen Yuen
IPC分类号： H01L21/306 , C23C16/00 , H01L21/67 , H01J37/32 , H05B6/10
CPC分类号： H01J37/321 , C23C14/22 , C23C16/44 , H01F21/12 , H01J37/32321 , H01J37/32522 , H01J37/32623 , H01J37/32935 , H01J2237/327 , H01J2237/334 , H01L21/67017 , H01L21/67069 , H05B6/02 , H05B6/108
摘要： A shielded lid heater lid heater suitable for use with a plasma processing chamber, a plasma processing chamber having a shielded lid heater and a method for plasma processing are provided. The method and apparatus enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, a shielded lid heater is provided that includes an aluminum base and RF shield sandwiching a heater element.

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