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1. 发明授权

US5412246A Low temperature plasma oxidation process 失效
标题翻译：低温等离子体氧化工艺
公开(公告)号：US5412246A
公开(公告)日：1995-05-02
申请号：US186568
申请日：1994-01-26
申请人： David M. Dobuzinsky , David L. Harmon , Srinandan R. Kasi , Donald M. Kenney , Son V. Nguyen , Tue Nguyen , Pai-Hung Pan
发明人： David M. Dobuzinsky , David L. Harmon , Srinandan R. Kasi , Donald M. Kenney , Son V. Nguyen , Tue Nguyen , Pai-Hung Pan
IPC分类号： C23C8/36 , H01L21/31 , H01L21/316 , H01L21/321 , H01L21/8242 , H01L27/108 , H01L29/12
CPC分类号： H01L21/32105 , H01L21/02238 , H01L21/02252 , H01L21/31662 , Y10S148/118 , Y10S257/90
摘要： A process for forming a thin film on a surface of a semiconductor device. The process involves formation of a silicon dioxide film by plasma enhanced thermal oxidation, employing a mixture of ozone and oxygen which are generated separately from the reactor chamber in a volume ratio of about 1-10/1, preferably about 5-7/1, at a temperature generally below 440.degree. C., preferably about 350.degree.-400.degree. C. The process is used to form sidewall oxide spacers on polysilicon gates for field effect transistors. A relatively fast oxidation rate is achieved at a temperature significantly below that employed in conventional oxidation processes, and this serves to reduce dopant diffusion from the polysilicon. In addition, the resulting film demonstrates low stress with good conformal step coverage of the polysilicon gates. Another use of the process is to grow thin gate oxides and oxide-nitride-oxide with a thickness of less than 100 .ANG.. An oxide film of uniform thickness is formed by controlling the temperature, RF power, exposure time and oxygen/ozone ratio for thin gate oxide (
摘要翻译：一种在半导体器件的表面上形成薄膜的工艺。该方法包括通过等离子体增强的热氧化形成二氧化硅膜，采用臭氧和氧的混合物，其以反应器室分开产生，体积比约为1-10 / 1，优选约5-7 / 1，在一般低于440℃，优选约350-400℃的温度下进行。该方法用于在场效应晶体管的多晶硅栅上形成侧壁氧化物间隔物。在显着低于常规氧化工艺中使用的温度下实现相对较快的氧化速率，这用于减少掺杂剂从多晶硅的扩散。此外，所得膜表现出低应力，并具有多晶硅栅极的良好的共形台阶覆盖。该方法的另一个用途是生长厚度小于100安培的薄栅氧化物和氧化物 - 氮化物 - 氧化物。通过控制ULSI FET制造中薄栅氧化物（<100 ANGSTROM）应用的温度，RF功率，曝光时间和氧/臭氧比，形成均匀厚度的氧化膜。

2. 发明授权

US5468687A Method of making TA.sub.2 O.sub.5 thin film by low temperature ozone plasma annealing (oxidation) 失效
标题翻译：低温臭氧等离子体退火（氧化）制备TA2O5薄膜的方法
公开(公告)号：US5468687A
公开(公告)日：1995-11-21
申请号：US281399
申请日：1994-07-27
申请人： Dan Carl , David M. Dobuzinsky , Son V. Nguyen , Tue Nguyen
发明人： Dan Carl , David M. Dobuzinsky , Son V. Nguyen , Tue Nguyen
IPC分类号： C30B29/16 , H01B3/00 , H01B3/10 , H01L21/02 , H01L21/205 , H01L21/316 , H01L21/70
CPC分类号： H01L28/40
摘要： A method for low temperature annealing (oxidation) of high dielectric constant Ta.sub.2 O.sub.5 thin films uses an ozone enhanced plasma. The films produced are especially applicable to 64 and 256 Mbit DRAM applications. The ozone enhanced plasma annealing process for thin film Ta.sub.2 O.sub.5 reduces the processing temperature to 400.degree. C. and achieves comparable film quality, making the Ta.sub.2 O.sub.5 films more suitable for Ultra-Large Scale Integration (ULSI) applications (storage dielectric for 64 and 256 Megabit DRAMs with stack capacitor structures, etc.) or others that require low temperature processing. This low temperature process is extendable to other high dc and piezoelectric thin films which may have many other applications.
摘要翻译：高介电常数Ta2O5薄膜的低温退火（氧化）方法使用臭氧增强等离子体。所制作的电影特别适用于64和256 Mbit DRAM应用。用于薄膜Ta2O5的臭氧增强等离子体退火工艺将处理温度降低到400℃，并实现了相当的膜质量，使得Ta2O5膜更适合于超大规模集成（ULSI）应用（64和256兆位DRAM的存储电介质堆叠电容器结构等）或需要低温处理的其他。这种低温工艺可扩展到可能具有许多其它应用的其它高直流和压电薄膜。

3. 发明授权

US5455204A Thin capacitor dielectric by rapid thermal processing 失效
标题翻译：薄电容电介质通过快速热处理
公开(公告)号：US5455204A
公开(公告)日：1995-10-03
申请号：US353760
申请日：1994-12-12
申请人： David M. Dobuzinsky , Son V. Nguyen , Tue Nguyen
发明人： David M. Dobuzinsky , Son V. Nguyen , Tue Nguyen
IPC分类号： H01L21/02 , H01L21/314
CPC分类号： H01L28/86 , H01L21/3144
摘要： The invention provides a continuous rapid thermal process for forming a substantially uniform oxynitride film on fingered three-dimensional silicon structures comprising cleaning of the silicon substrate and growth of silicon oxide in the presence of ozone, nitridation of the silicon oxide layer in the presence of NH.sub.3 and reoxidation of the oxynitride layer in the presence of oxygen.
摘要翻译：本发明提供了一种用于在手指三维硅结构上形成基本上均匀的氮氧化合物膜的连续快速热处理，包括在臭氧存在下清洗硅衬底和生长氧化硅，在NH 3存在下氮化氧化硅层并在氧气存在下再氧化氮氧化物层。

4. 发明授权

US5330935A Low temperature plasma oxidation process 失效
标题翻译：低温等离子体氧化工艺
公开(公告)号：US5330935A
公开(公告)日：1994-07-19
申请号：US915752
申请日：1992-07-21
申请人： David M. Dobuzinsky , David L. Harmon , Srinandan R Kasi , Donald M. Kenney , Son Van Nguyen , Tue Nguyen , Pai-Hung Pan
发明人： David M. Dobuzinsky , David L. Harmon , Srinandan R Kasi , Donald M. Kenney , Son Van Nguyen , Tue Nguyen , Pai-Hung Pan
IPC分类号： C23C8/36 , H01L21/31 , H01L21/316 , H01L21/321 , H01L21/8242 , H01L27/108 , H01L21/02
CPC分类号： H01L21/32105 , H01L21/02238 , H01L21/02252 , H01L21/31662 , Y10S148/118 , Y10S257/90
摘要： A process for forming a thin film on a surface of a semiconductor device. The process involves formation of a silicon dioxide film by plasma enhanced thermal oxidation, employing a mixture of ozone and oxygen which are generated separately from the reactor chamber in a volume ratio of about 1-10/1, preferably about 5-7/1, at a temperature generally below 440.degree. C., preferably about 350.degree.-400.degree. C. The process is used to form sidewall oxide spacers on polysilicon gates for field effect transistors. A relatively fast oxidation rate is achieved at a temperature significantly below that employed in conventional oxidation processes, and this serves to reduce dopant diffusion from the polysilicon. In addition, the resulting film demonstrates low stress with good conformal step coverage of the polysilicon gates. Another use of the process is to grow thin gate oxides and oxide-nitride-oxide with a thickness of less than 100.ANG.. An oxide film of uniform thickness is formed by controlling the temperature, RF power, exposure time and oxygen/ozone ratio for thin gate oxide (
摘要翻译：一种在半导体器件的表面上形成薄膜的工艺。该方法包括通过等离子体增强的热氧化形成二氧化硅膜，采用臭氧和氧的混合物，其以反应器室分开产生，体积比约为1-10 / 1，优选约5-7 / 1，在一般低于440℃，优选约350-400℃的温度下进行。该方法用于在场效应晶体管的多晶硅栅上形成侧壁氧化物间隔物。在显着低于常规氧化工艺中使用的温度下实现相对较快的氧化速率，这用于减少掺杂剂从多晶硅的扩散。此外，所得膜表现出低应力，并具有多晶硅栅极的良好的共形台阶覆盖。该方法的另一个用途是生长厚度小于100安培的薄栅氧化物和氧化物 - 氮化物 - 氧化物。通过控制ULSI FET制造中薄栅氧化物（<100 ANGSTROM）应用的温度，RF功率，曝光时间和氧/臭氧比，形成均匀厚度的氧化膜。

5. 发明授权

US10137642B1 Methods to form 3D objects using cross-linkable or sinterable materials 有权
公开(公告)号：US10137642B1
公开(公告)日：2018-11-27
申请号：US14704945
申请日：2015-05-05
申请人： Karl Joseph Gifford , Daniel Joseph Hutchison , Tai Dung Nguyen , Tue Nguyen
发明人： Karl Joseph Gifford , Daniel Joseph Hutchison , Tai Dung Nguyen , Tue Nguyen
IPC分类号： B29C67/02 , B29C67/00 , B29K101/12 , B29K105/24 , B29K105/00 , B29K105/16 , B29K509/02 , B29L31/00
摘要： Methods to form cross-linked or sintered objects include forming walls for reservoir layers, with cross-linkable or sinterable materials deposited in the reservoir layers. The cross-linkable or sinterable materials can then be cross-linked, e.g., changing the structure of the deposited cross linkable materials, or sintered, e.g., heat treated to fused the sinterable materials together. The walls for the reservoir layers can be removed after the objects are formed.

6. 发明授权

US09708707B2 Nanolayer deposition using bias power treatment 有权
公开(公告)号：US09708707B2
公开(公告)日：2017-07-18
申请号：US12783431
申请日：2010-05-19
申请人： Robert Anthony Ditizio , Tue Nguyen , Tai Dung Nguyen
发明人： Robert Anthony Ditizio , Tue Nguyen , Tai Dung Nguyen
IPC分类号： C23C16/34 , C23C16/455 , C23C16/507
CPC分类号： C23C16/34 , C23C16/45523 , C23C16/507
摘要： A hybrid deposition process of CVD and ALD, called NanoLayer Deposition (NLD) is provided. The NLD process is a cyclic sequential deposition process, comprising introducing a first plurality of precursors to deposit a thin layer with the deposition process not self limiting, followed by introducing a second plurality of precursors for plasma treating the thin deposited layer. The plasma can be isotropic, anisotropic, or a combination of isotropic and anisotropic to optimize the effectiveness of the treatment of the thin deposited layers.

7. 发明申请

US20170086493A1 Bordering image in liquid printing process 审中-公开
公开(公告)号：US20170086493A1
公开(公告)日：2017-03-30
申请号：US15044100
申请日：2016-02-15
申请人： Hue P. Le , Tai Ngoc Dang , Tue Nguyen
发明人： Hue P. Le , Tai Ngoc Dang , Tue Nguyen
IPC分类号： A23P20/15 , B41J2/21
CPC分类号： A23P20/15 , A23L5/40 , A23P20/10 , A23P2020/253 , A23V2002/00 , B41J2/21 , B41J3/407 , B41M3/00 , B41M5/0017 , B41M5/0047
摘要： Ink jet printing on a liquid medium can be performed using liquid inks having a thermo inversion gelling property. A barrier can be formed surrounding the printed image to minimize diffusion of the image border gel droplets. The barrier can include an image border printed in clear color ink.

8. 发明授权

US09466758B2 Composite substrates of silicon and ceramic 有权
公开(公告)号：US09466758B2
公开(公告)日：2016-10-11
申请号：US14957588
申请日：2015-12-02
申请人： Ananda H. Kumar , Tue Nguyen
发明人： Ananda H. Kumar , Tue Nguyen
IPC分类号： H01L33/00 , H01L31/18 , H01L21/762 , H01L31/0224
CPC分类号： H01L33/007 , H01L21/76254 , H01L31/022425 , H01L31/1804
摘要： Composite substrates include a single crystal silicon layer disposed on a ceramic layer, including a transparent glass layer. Combination of single crystal devices and non-single crystal devices can be fabricated on a ceramic substrate.

9. 发明授权

US09447496B2 Nanolayer deposition process 有权
公开(公告)号：US09447496B2
公开(公告)日：2016-09-20
申请号：US13480912
申请日：2012-05-25
申请人： Tue Nguyen , Tai Dung Nguyen
发明人： Tue Nguyen , Tai Dung Nguyen
IPC分类号： H05H1/00 , C23C16/455 , C23C16/56
CPC分类号： C23C16/45525 , C23C16/56
摘要： A hybrid deposition process of CVD and ALD, called NanoLayer Deposition (NLD) is provided. The NLD process is a cyclic sequential deposition process, including introducing a first plurality of precursors to deposit a thin film and introducing a second plurality of precursors to modify the deposited thin film. The deposition using the first set of precursors is not self limiting and is a function of substrate temperature and process time. The second set of precursors modifies the already deposited film characteristics. The second set of precursors can treat the deposited film, including treatments such as modification of film composition and doping or removal of impurities from the deposited film. The second set of precursors can also deposit another layer on the deposited film. The additional layer can react with the existing layer to form a compound layer, or can have minimum reaction to form a nanolaminate film.

10. 发明申请

US20150174824A1 Systems and methods for 3D printing with multiple exchangeable printheads 审中-公开
标题翻译：具有多个可更换打印头的3D打印系统和方法
公开(公告)号：US20150174824A1
公开(公告)日：2015-06-25
申请号：US14578309
申请日：2014-12-19
申请人： Karl Joseph Gifford , Daniel Joseph Hutchison , Tai Dung Nguyen , Tue Nguyen
发明人： Karl Joseph Gifford , Daniel Joseph Hutchison , Tai Dung Nguyen , Tue Nguyen
IPC分类号： B29C67/00
CPC分类号： B29C64/20 , B29C64/112 , B33Y30/00
摘要： A modular 3D printer system can include a base subsystem and multiple exchangeable components. The base subsystem can have a 3D motion module, a printhead module and a platform module. The multiple exchangeable components can include printheads having different configurations and functionalities, which can be exchangeably installed in the printhead module. The multiple exchangeable components can include platform supports having different configurations and functionalities, which can be exchangeably installed in the platform module.
摘要翻译：模块化3D打印机系统可以包括基本子系统和多个可交换组件。基础子系统可以具有3D运动模块，打印头模块和平台模块。多个可更换组件可以包括具有不同配置和功能的打印头，其可以可交换地安装在打印头模块中。多个可交换组件可以包括具有不同配置和功能的平台支架，其可以可交换地安装在平台模块中。

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