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1. 发明授权

US09708707B2 Nanolayer deposition using bias power treatment 有权
公开(公告)号：US09708707B2
公开(公告)日：2017-07-18
申请号：US12783431
申请日：2010-05-19
申请人： Robert Anthony Ditizio , Tue Nguyen , Tai Dung Nguyen
发明人： Robert Anthony Ditizio , Tue Nguyen , Tai Dung Nguyen
IPC分类号： C23C16/34 , C23C16/455 , C23C16/507
CPC分类号： C23C16/34 , C23C16/45523 , C23C16/507
摘要： A hybrid deposition process of CVD and ALD, called NanoLayer Deposition (NLD) is provided. The NLD process is a cyclic sequential deposition process, comprising introducing a first plurality of precursors to deposit a thin layer with the deposition process not self limiting, followed by introducing a second plurality of precursors for plasma treating the thin deposited layer. The plasma can be isotropic, anisotropic, or a combination of isotropic and anisotropic to optimize the effectiveness of the treatment of the thin deposited layers.

2. 发明申请

US20120021138A1 NANOLAYER DEPOSITION PROCESS FOR COMPOSITE FILMS 有权
标题翻译：复合膜的纳米层沉积工艺
公开(公告)号：US20120021138A1
公开(公告)日：2012-01-26
申请号：US13235909
申请日：2011-09-19
申请人： Robert Anthony Ditizio , Tue Nguyen , Tai Dung Nguyen
发明人： Robert Anthony Ditizio , Tue Nguyen , Tai Dung Nguyen
IPC分类号： H05H1/24
CPC分类号： C23C16/56 , C23C16/409 , C23C16/45531 , C23C16/45536
摘要： A NanoLayer Deposition (NLD) process for depositing composite films of tertiary, quaternary, pentanary, and hexary stoichiometric films is provided. The inventive deposition process is a cyclic process consisting of a sequence of thin film deposition and treatment steps to obtain a desired film stoichiometry. The deposition steps are not self-limiting as in atomic layer deposition. In one embodiment for depositing a compound oxide film, the deposition process comprises a first deposition, followed by a hydrogen-containing plasma treatment, a second deposition followed by a hydrogen-containing plasma treatment, and then a third deposition followed by a hydrogen-containing plasma and then an oxygen-containing plasma treatment to produce a stoichiometric quaternary film. The cyclic process is repeated until the desired overall film thickness is achieved. The inventive process is used to fabricate high k dielectric films, ferroelectric films, piezoelectric films, and other complex oxides.
摘要翻译：提供了用于沉积三次，四元，五元和六元化学计量薄膜的复合膜的纳米层沉积（NLD）沉积方法。本发明的沉积工艺是由一系列薄膜沉积和处理步骤组成的循环工艺，以获得所需的膜化学计量。沉积步骤不是像在原子层沉积中那样自限制的。在用于沉积复合氧化物膜的一个实施方案中，沉积工艺包括第一沉积，随后是含氢等离子体处理，第二次沉积，然后进行含氢等离子体处理，然后进行第三次沉积，然后是含氢然后进行含氧等离子体处理以产生化学计量的四元膜。重复循环过程，直到达到所需的总膜厚度。本发明的方法用于制造高k电介质膜，铁电体膜，压电膜和其它复合氧化物。

3. 发明授权

US09121098B2 NanoLayer Deposition process for composite films 有权
标题翻译：复合膜的纳米层沉积工艺
公开(公告)号：US09121098B2
公开(公告)日：2015-09-01
申请号：US13235909
申请日：2011-09-19
申请人： Robert Anthony Ditizio , Tue Nguyen , Tai Dung Nguyen
发明人： Robert Anthony Ditizio , Tue Nguyen , Tai Dung Nguyen
IPC分类号： H05H1/00 , C23C16/56 , C23C16/40 , C23C16/455
CPC分类号： C23C16/56 , C23C16/409 , C23C16/45531 , C23C16/45536
摘要： A NanoLayer Deposition (NLD) process for depositing composite films of tertiary, quaternary, pentanary, and hexary stoichiometric films is provided. The inventive deposition process is a cyclic process consisting of a sequence of thin film deposition and treatment steps to obtain a desired film stoichiometry. The deposition steps are not self-limiting as in atomic layer deposition. In one embodiment for depositing a compound oxide film, the deposition process comprises a first deposition, followed by a hydrogen-containing plasma treatment, a second deposition followed by a hydrogen-containing plasma treatment, and then a third deposition followed by a hydrogen-containing plasma and then an oxygen-containing plasma treatment to produce a stoichiometric quaternary film. The cyclic process is repeated until the desired overall film thickness is achieved. The inventive process is used to fabricate high k dielectric films, ferroelectric films, piezoelectric films, and other complex oxides.
摘要翻译：提供了用于沉积三次，四元，五元和六元化学计量薄膜的复合膜的纳米层沉积（NLD）沉积方法。本发明的沉积工艺是由一系列薄膜沉积和处理步骤组成的循环工艺，以获得所需的膜化学计量。沉积步骤不是像在原子层沉积中那样自限制的。在用于沉积复合氧化物膜的一个实施方案中，沉积工艺包括第一沉积，随后是含氢等离子体处理，第二次沉积，然后进行含氢等离子体处理，然后进行第三次沉积，然后是含氢然后进行含氧等离子体处理以产生化学计量的四元膜。重复循环过程，直到达到所需的总膜厚度。本发明的方法用于制造高k电介质膜，铁电体膜，压电膜和其它复合氧化物。

4. 发明申请

US20120202353A1 NANOLAYER DEPOSITION USING PLASMA TREATMENT 审中-公开
标题翻译：使用等离子体处理的NANOLAYER沉积
公开(公告)号：US20120202353A1
公开(公告)日：2012-08-09
申请号：US13449241
申请日：2012-04-17
申请人： Robert Anthony Ditizio , Tue Nguyen , Tai Dung Nguyen
发明人： Robert Anthony Ditizio , Tue Nguyen , Tai Dung Nguyen
IPC分类号： H01L21/30
CPC分类号： C23C16/34 , C23C16/45523 , C23C16/507
摘要： A process to deposit a thin film by chemical vapor deposition includes evacuating a chamber of gases; exposing a device to a gaseous first reactant, wherein the first reactant deposits on the device to form the thin film having a plurality of monolayers in thickness; evacuating the chamber of gases; exposing the device, coated with the first reactant, to a gaseous second reactant under a plasma treatment, wherein the thin film is treated by the first reactant; and repeating the previous steps.
摘要翻译：通过化学气相沉积沉积薄膜的方法包括抽空气体室; 将装置暴露于气态第一反应物，其中所述第一反应物沉积在所述装置上以形成具有多个单层厚度的薄膜; 排空气体室; 在等离子体处理下将涂覆有第一反应物的装置暴露于气态第二反应物，其中薄膜由第一反应物处理; 并重复前面的步骤。

5. 发明申请

US20100285237A1 NANOLAYER DEPOSITION USING BIAS POWER TREATMENT 有权
标题翻译： NANOLAYER沉积使用BIAS功率处理
公开(公告)号：US20100285237A1
公开(公告)日：2010-11-11
申请号：US12783431
申请日：2010-05-19
申请人： Robert Anthony Ditizio , Tue Nguyen , Tai Dung Nguyen
发明人： Robert Anthony Ditizio , Tue Nguyen , Tai Dung Nguyen
IPC分类号： H05H1/00
CPC分类号： C23C16/34 , C23C16/45523 , C23C16/507
摘要： A hybrid deposition process of CVD and ALD, called NanoLayer Deposition (NLD) is provided. The NLD process is a cyclic sequential deposition process, comprising introducing a first plurality of precursors to deposit a thin layer with the deposition process not self limiting, followed by introducing a second plurality of precursors for plasma treating the thin deposited layer. The plasma can be isotropic, anisotropic, or a combination of isotropic and anisotropic to optimize the effectiveness of the treatment of the thin deposited layers.
摘要翻译：提供了称为NanoLayer沉积（NLD）的CVD和ALD的混合沉积工艺。 NLD工艺是循环顺序沉积工艺，包括引入第一多个前体以沉积具有沉积过程而不是自限制的薄层，随后引入第二多个前体用于等离子体处理薄的沉积层。等离子体可以是各向同性的，各向异性的，或各向同性和各向异性的组合，以优化薄沉积层的处理的有效性。

6. 发明申请

US20220055300A1 Systems and methods for 3D printing with multiple exchangeable printheads 有权
公开(公告)号：US20220055300A1
公开(公告)日：2022-02-24
申请号：US17515701
申请日：2021-11-01
申请人： Karl Joseph Gifford , Tai Dung Nguyen , Tue Nguyen
发明人： Karl Joseph Gifford , Tai Dung Nguyen , Tue Nguyen
IPC分类号： B29C64/209 , B29C64/245 , B29C64/112 , B29C64/118 , B29C64/241 , B29C64/336
摘要： A modular 3D printer system can include a base subsystem and multiple exchangeable components. The base subsystem can have a 3D motion module, a printhead module and a platform module. The multiple exchangeable components can include printheads having different configurations and functionalities, which can be exchangeably installed in the printhead module. The multiple exchangeable components can include platform supports having different configurations and functionalities, which can be exchangeably installed in the platform module.

7. 发明授权

US11161298B2 Systems and methods for 3D printing with multiple exchangeable printheads 有权
公开(公告)号：US11161298B2
公开(公告)日：2021-11-02
申请号：US15810014
申请日：2017-11-11
申请人： Karl Joseph Gifford , Tai Dung Nguyen , Tue Nguyen
发明人： Karl Joseph Gifford , Tai Dung Nguyen , Tue Nguyen
IPC分类号： B29C67/00 , B29C64/209 , B29C64/245 , B29C64/112 , B29C64/118 , B29C64/241 , B29C64/336 , B33Y10/00 , B33Y30/00 , B33Y40/00
摘要： A modular 3D printer system can include a base subsystem and multiple exchangeable components. The base subsystem can have a 3D motion module, a printhead module and a platform module. The multiple exchangeable components can include printheads having different configurations and functionalities, which can be exchangeably installed in the printhead module. The multiple exchangeable components can include platform supports having different configurations and functionalities, which can be exchangeably installed in the platform module.

8. 发明申请

US20100190353A1 NANOLAYER DEPOSITION PROCESS 有权
标题翻译： NANOLAYER沉积工艺
公开(公告)号：US20100190353A1
公开(公告)日：2010-07-29
申请号：US12732825
申请日：2010-03-26
申请人： Tue Nguyen , Tai Dung Nguyen
发明人： Tue Nguyen , Tai Dung Nguyen
IPC分类号： H01L21/461
CPC分类号： C23C16/45525 , C23C16/56
摘要： A hybrid deposition process of CVD and ALD, called NanoLayer Deposition (NLD) is provided. The nanolayer deposition process is a cyclic sequential deposition process, comprising the first step of introducing a first plurality of precursors to deposit a thin film with the deposition process not self-limiting, then a second step of purging the first set of precursors and a third step of introducing a second plurality of precursors to modify the deposited thin film. The deposition step in the NLD process using the first set of precursors is not self limiting and is a function of substrate temperature and process time. The second set of precursors modifies the already deposited film characteristics. The second set of precursors can treat the deposited film such as a modification of film composition, a doping or a removal of impurities from the deposited film. The second set of precursors can also deposit another layer on the deposited film. The additional layer can react with the existing layer to form a compound layer, or can have minimum reaction to form a nanolaminate film.
摘要翻译：提供了称为NanoLayer沉积（NLD）的CVD和ALD的混合沉积工艺。纳米层沉积工艺是循环顺序沉积工艺，包括引入第一多个前体以沉积薄膜而不是自限制的沉积工艺的第一步骤，然后第二步骤是清洗第一组前体和第三步引入第二多个前体以修饰沉积的薄膜的步骤。使用第一组前体的NLD工艺中的沉积步骤不是自限制的，并且是衬底温度和处理时间的函数。第二组前体改变已沉积的膜特性。第二组前体可以处理沉积的膜，例如膜组成的改变，掺杂或从沉积膜去除杂质。第二组前体也可以在沉积膜上沉积另一层。附加层可以与现有层反应以形成化合物层，或者可以具有最小的反应以形成纳米层间膜。

9. 发明授权

US06670266B2 Multilayered diffusion barrier structure for improving adhesion property 有权
标题翻译：用于提高粘合性能的多层扩散阻挡结构
公开(公告)号：US06670266B2
公开(公告)日：2003-12-30
申请号：US10292929
申请日：2002-11-13
申请人： Tue Nguyen , Tai Dung Nguyen
发明人： Tue Nguyen , Tai Dung Nguyen
IPC分类号： H01L214763
CPC分类号： H01L21/76888 , H01L21/76846 , H01L21/76856
摘要： A method has been provided for improving the adhesion of copper to a nitrided metal diffusion barrier material, such as TiN, in an integrated circuit substrate. The method provided a multilayered diffusion barrier structure, comprising a conducting diffusion barrier layer and a poorly conducting adhesion-promoter layer in selected locations. The formation of a poorly conducting adhesion-promoter layer in selected locations permits the optimization of both contact resistance and adhesion property. The poorly conducting adhesion-promoter layer is formed either by the partial incorporation of oxygen into the diffusion barrier or by deposition in an oxygen ambient.
摘要翻译：已经提供了一种用于提高铜在集成电路基板中与氮化金属扩散阻挡材料（例如TiN）的粘附性的方法。该方法提供了多层扩散阻挡结构，其包括在选定位置的导电扩散阻挡层和不良导电的粘附促进剂层。在选择的位置形成不良导电的粘合促进剂层可以优化接触电阻和粘附性。不良导电的粘合促进剂层通过将氧部分掺入扩散阻挡层或通过在氧气氛中沉积而形成。

10. 发明授权

US06610169B2 Semiconductor processing system and method 有权
公开(公告)号：US06610169B2
公开(公告)日：2003-08-26
申请号：US09840349
申请日：2001-04-21
申请人： Tue Nguyen , Tai Dung Nguyen , Craig Alan Bercaw
发明人： Tue Nguyen , Tai Dung Nguyen , Craig Alan Bercaw
IPC分类号： H01L2100
CPC分类号： C23C16/45536 , C23C16/45561 , C23C16/481 , C23C16/515 , H01L21/67115 , H01L21/67248
摘要： Systems and methods are disclosed to perform semiconductor processing with a process chamber; a flash lamp adapted to be repetitively triggered; and a controller coupled to the control input of the flash lamp to trigger the flash lamp. The system can deploy a solid state plasma source in parallel with the flash lamp in wafer processing.

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