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    • 1. 发明授权
    • Reducing false positives in configuration error detection for programmable devices
    • 减少可编程器件配置错误检测中的误报
    • US07620876B2
    • 2009-11-17
    • US11407519
    • 2006-04-19
    • David LewisRobert BlakeRichard G. CliffSrinivas T. Reddy
    • David LewisRobert BlakeRichard G. CliffSrinivas T. Reddy
    • G11C29/00
    • G11C29/42G06F11/1008G11C29/52
    • A device reduces false positive memory error detections by using a masking unit and sensitivity mask data to exclude unused portions of the memory from the error detection computations. A device includes an error detection unit to read data from the memory and verify data integrity. The sensitivity mask data indicates unused portions of the memory. Unused portions of the memory may correspond with configuration data for unused portions of a programmable device. Each bit of the sensitivity mask data may indicate the usage of one or more bits of the data from the memory. In response to the mask data, the masking unit sets data from the unused portions of the memory to values that do not change the result of the error detection computations. This prevents any errors in data from the unused portions of the memory from raising an error signal.
    • 设备通过使用掩蔽单元和灵敏度掩码数据来减少假阳性存储器错误检测,以从错误检测计算中排除存储器的未使用部分。 一种设备包括一个错误检测单元,用于从存储器读取数据并验证数据完整性。 灵敏度掩码数据指示存储器的未使用部分。 存储器的未使用部分可以对应于可编程设备的未使用部分的配置数据。 灵敏度掩码数据的每一位可以指示来自存储器的数据的一位或多位的使用。 响应于掩模数据,掩蔽单元将来自存储器的未使用部分的数据设置为不改变错误检测计算结果的值。 这防止来自存储器的未使用部分的数据中的任何错误引起错误信号。
    • 9. 发明授权
    • Dual port programmable logic device variable depth and width memory array
    • 双端口可编程逻辑器件可变深度和宽度存储器阵列
    • US06392954B2
    • 2002-05-21
    • US09747191
    • 2000-12-21
    • Srinivas T. ReddyChristopher F. LaneManuel MejiaRichard G. CliffKerry Veenstra
    • Srinivas T. ReddyChristopher F. LaneManuel MejiaRichard G. CliffKerry Veenstra
    • G11C800
    • G11C7/1006
    • A dual-port programmable logic device memory array is provided. Selectable-size data words may be written to and read from the array concurrently. Data is written into the array using write column decoder and data selection logic. The size of the data words handled by the write column decoder and data selection logic is controlled by mode select signals. Data is read from the array using read column decoder and data selection logic. The size of the data words handled by the read column decoder and data selection logic is also controlled by mode select signals. The write column decoder and data selection logic may be used to write data into the memory array at one selected location at the same time that the read column decoder and data selection logic is used to read data from the array at another selected location. A write row address decoder and a read row address decoder are used to independently address individual rows of memory cells in the memory array during writing and reading, respectively.
    • 提供了双端口可编程逻辑器件存储器阵列。 可选择大小的数据字可以并行写入阵列并从阵列中读取。 使用写列解码器和数据选择逻辑将数据写入阵列。 由写列解码器和数据选择逻辑处理的数据字的大小由模式选择信号控制。 使用读列解码器和数据选择逻辑从数组中读取数据。 由读列解码器和数据选择逻辑处理的数据字的大小也由模式选择信号控制。 写列解码器和数据选择逻辑可以用于在一个选定位置将数据写入存储器阵列,同时读列解码器和数据选择逻辑用于在另一选定位置从阵列中读取数据。 写入行地址解码器和读取行地址解码器分别用于在写入和读取期间独立地对存储器阵列中的存储单元的各行进行寻址。