专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06365320B1 Process for forming anti-reflective film for semiconductor fabrication using extremely short wavelength deep ultraviolet photolithography 有权
标题翻译：使用极短波长深紫外光刻法形成用于半导体制造的抗反射膜的方法
公开(公告)号：US06365320B1
公开(公告)日：2002-04-02
申请号：US09233849
申请日：1999-01-19
申请人： David K. Foote , Subhash Gupta
发明人： David K. Foote , Subhash Gupta
IPC分类号： G03C1725
CPC分类号： H01L21/0276 , H01L21/3121 , H01L21/3144 , H01L21/3145 , H01L21/76802 , H01L21/76895 , H01L23/5226 , H01L2924/0002 , Y10S430/151 , H01L2924/00
摘要： An anti-reflective film for deep ultraviolet (DUV) photolithograghy includes silicon oxime having the formula Si(1−x+y+z)NxOy:H2, wherein x, y, and z represent the atomic percentage of nitrogen, oxygen, and hydrogen, respectively. The film is characterized by a substantial lack of bonding between silicon atoms and oxygen atoms, and has a thickness of less than approximately 600 Å which is selected to produce destructive interference between incident and reflected light at a selected DUV wavelength.
摘要翻译：用于深紫外（DUV）光刻的抗反射膜包括具有式Si（1-x + y + z）N x O y：H 2的硅肟，其中x，y和z表示氮，氧和氢的原子百分比，分别。该膜的特征在于硅原子和氧原子之间的键合相当大，并且具有小于约600的厚度，其被选择为在选定的DUV波长处产生入射光和反射光之间的相消干涉。

2. 发明授权

US06313018B1 Process for fabricating semiconductor device including antireflective etch stop layer 有权
标题翻译：用于制造包括抗反射蚀刻停止层的半导体器件的工艺
公开(公告)号：US06313018B1
公开(公告)日：2001-11-06
申请号：US09504449
申请日：2000-02-16
申请人： Fei Wang , David K. Foote , Myron R. Cagan , Subhash Gupta
发明人： Fei Wang , David K. Foote , Myron R. Cagan , Subhash Gupta
IPC分类号： H01L2120
CPC分类号： H01L21/0214 , H01L21/02126 , H01L21/02129 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/0276 , H01L21/3121 , H01L21/3144 , H01L21/3145 , H01L21/76802 , H01L21/76834 , H01L21/76895 , H01L21/76897 , H01L23/5226 , H01L2924/0002 , H01L2924/00
摘要： A microelectronic device such as a Metal-Oxide-Semiconductor (MOS) transistor is formed on a semiconductor substrate. A tungsten damascene interconnect for the device is formed using an etch stop layer of silicon nitride, silicon oxynitride or silicon oxime having a high silicon content of approximately 40% to 50% by weight. The etch stop layer has high etch selectivity relative to overlying insulator materials such as silicon dioxide, tetraethylorthosilicate (TEOS) glass and borophosphosilicate glass (BPSG). The etch stop layer also has a high index of refraction and is anti-reflective, thereby improving critical dimension control during photolithographic imaging.
摘要翻译：在半导体衬底上形成诸如金属氧化物半导体（MOS）晶体管的微电子器件。用于器件的钨镶嵌互连使用具有大约40％至50％重量的硅含量的氮化硅，氮氧化硅或硅肟的蚀刻停止层形成。蚀刻停止层相对于上覆绝缘体材料如二氧化硅，原硅酸四乙酯（TEOS）玻璃和硼磷硅酸盐玻璃（BPSG）具有高蚀刻选择性。蚀刻停止层还具有高折射率并且是抗反射性的，从而改善光刻成像期间的临界尺寸控制。

3. 发明授权

US6040619A Semiconductor device including antireflective etch stop layer 失效
标题翻译：半导体器件包括抗反射蚀刻停止层
公开(公告)号：US6040619A
公开(公告)日：2000-03-21
申请号：US937774
申请日：1997-09-25
申请人： Fei Wang , David K. Foote , Myron R. Cagan , Subhash Gupta
发明人： Fei Wang , David K. Foote , Myron R. Cagan , Subhash Gupta
IPC分类号： H01L21/28 , H01L21/027 , H01L21/312 , H01L21/314 , H01L21/318 , H01L21/336 , H01L21/768 , H01L21/8244 , H01L23/522 , H01L27/11 , H01L29/78 , H01L23/58 , H01L21/316 , H01L23/48
CPC分类号： H01L21/0276 , H01L21/3121 , H01L21/3144 , H01L21/3145 , H01L21/76802 , H01L21/76834 , H01L21/76895 , H01L21/76897 , H01L23/5226 , H01L2924/0002
摘要： A microelectronic device such as a Metal-Oxide-Semiconductor (MOS) transistor is formed on a semiconductor substrate. A tungsten damascene interconnect for the device is formed using an etch stop layer of silicon nitride, silicon oxynitride or silicon oxime having a high silicon content of approximately 40% to 50% by weight. The etch stop layer has high etch selectivity relative to overlying insulator materials such as silicon dioxide, tetraethylorthosilicate (TEOS) glass and borophosphosilicate glass (BPSG). The etch stop layer also has a high index of refraction and is anti-reflective, thereby improving critical dimension control during photolithographic imaging.
摘要翻译：在半导体衬底上形成诸如金属氧化物半导体（MOS）晶体管的微电子器件。用于器件的钨镶嵌互连使用具有大约40％至50％重量比的高硅含量的氮化硅，氮氧化硅或硅肟的蚀刻停止层形成。蚀刻停止层相对于上覆绝缘体材料如二氧化硅，原硅酸四乙酯（TEOS）玻璃和硼磷硅酸盐玻璃（BPSG）具有高蚀刻选择性。蚀刻停止层还具有高折射率并且是抗反射性的，从而改善光刻成像期间的临界尺寸控制。

4. 发明授权

US07452808B2 Method of copper/copper surface bonding using a conducting polymer for application in IC chip bonding 失效
标题翻译：使用导电聚合物铜/铜表面键合方法应用于IC芯片接合
公开(公告)号：US07452808B2
公开(公告)日：2008-11-18
申请号：US10988768
申请日：2004-11-15
申请人： Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Sudijono , Subhash Gupta , Sudipto Roy , Paul Ho , Yi Xu
发明人： Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Sudijono , Subhash Gupta , Sudipto Roy , Paul Ho , Yi Xu
IPC分类号： H01L21/44
CPC分类号： H01L24/13 , H01L24/11 , H01L24/81 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/1147 , H01L2224/1308 , H01L2224/13083 , H01L2224/13147 , H01L2224/1319 , H01L2224/1329 , H01L2224/133 , H01L2224/81801 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01078 , H01L2924/014 , H01L2924/14 , H01L2924/15747 , H01L2924/00014 , H01L2224/13099 , H01L2924/00
摘要： A semiconductor chip having an exposed metal terminating pad thereover, and a separate substrate having a corresponding exposed metal bump thereover are provided. A conducting polymer plug is formed over the exposed metal terminating pad. A conforming interface layer is formed over the conducting polymer plug. The conducting polymer plug of the semiconductor chip is aligned with the corresponding metal bump. The conforming interface layer over the conducting polymer plug is mated with the corresponding metal bump. The conforming interface layer is thermally decomposed, adhering and permanently attaching the conducting polymer plug with the corresponding metal bump. Methods of forming and patterning a nickel carbonyl layer are also disclosed.
摘要翻译：提供了具有暴露的金属端接垫的半导体芯片，以及在其上具有对应的暴露的金属凸块的单独的基板。在暴露的金属端接垫上形成导电聚合物塞。在导电聚合物塞上形成一个符合标准的界面层。半导体芯片的导电聚合物插塞与相应的金属凸块对准。导电聚合物塞上的一致界面层与相应的金属凸块配合。一致的界面层被热分解，粘附和永久地附着导电聚合物塞与相应的金属凸块。还公开了形成和图案化羰基镍层的方法。

5. 发明申请

US20060280698A1 System for treating conditions of the periodontium 审中-公开
标题翻译：治疗牙周膜病变的系统
公开(公告)号：US20060280698A1
公开(公告)日：2006-12-14
申请号：US11152499
申请日：2005-06-14
申请人： Subhash Gupta , Dennis Flanagan
发明人： Subhash Gupta , Dennis Flanagan
IPC分类号： A61K8/96 , A61K36/18
CPC分类号： A61Q11/00 , A61K8/97 , A61K36/18
摘要： A system for treating conditions of the periodontium, such as gingivitis and periodontitis, includes an Ayurvedic medicinal solution and an applicator for delivering the solution to the periodontium. The Ayurvedic medicinal solution utilizes herbal extracts to break-down bacteria which can inflame gum tissue. In one embodiment, the solution comprises approximately 1 gram of triphala extract for every 10 ml of glycerine. In another embodiment, the solution comprises approximately 1 gram of amla extract for every 10 ml of glycerine. The applicator for delivering the solution to the periodontium may either be in the form of a cotton swab-type wand, a pipette or a spray dispenser.
摘要翻译：用于治疗牙周病例如牙龈炎和牙周炎的系统包括阿育吠陀药用溶液和用于将溶液递送到牙周膜的施用器。阿育吠陀药用溶液利用草药提取物分解可以使牙龈组织发炎的细菌。在一个实施方案中，该溶液包含每10ml甘油约1克的三菌属提取物。在另一个实施方案中，该溶液包含每10ml甘油约1克的amla提取物。用于将溶液递送到牙周组织的施用器可以是棉签式棒，移液管或喷雾分配器的形式。

6. 发明授权

US06967162B2 Method of copper/copper surface bonding using a conducting polymer for application in IC chip bonding 有权
公开(公告)号：US06967162B2
公开(公告)日：2005-11-22
申请号：US10988769
申请日：2004-11-15
申请人： Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Sudijono , Subhash Gupta , Sudipto Roy , Paul Ho , Yi Xu
发明人： Simon Chooi , Yakub Aliyu , Mei Sheng Zhou , John Sudijono , Subhash Gupta , Sudipto Roy , Paul Ho , Yi Xu
IPC分类号： H01L21/44 , H01L21/50 , H01L21/60 , H01L23/48 , H01L23/485 , H01L23/52 , H01L29/40
CPC分类号： H01L24/13 , H01L24/11 , H01L24/81 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/1147 , H01L2224/1308 , H01L2224/13083 , H01L2224/13147 , H01L2224/1319 , H01L2224/1329 , H01L2224/133 , H01L2224/81801 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01078 , H01L2924/014 , H01L2924/14 , H01L2924/15747 , H01L2924/00014 , H01L2224/13099 , H01L2924/00
摘要： A semiconductor chip having an exposed metal terminating pad thereover, and a separate substrate having a corresponding exposed metal bump thereover are provided. A conducting polymer plug is formed over the exposed metal terminating pad. A conforming interface layer is formed over the conducting polymer plug. The conducting polymer plug of the semiconductor chip is aligned with the corresponding metal bump. The conforming interface layer over the conducting polymer plug is mated with the corresponding metal bump. The conforming interface layer is thermally decomposed, adhering and permanently attaching the conducting polymer plug with the corresponding metal bump. Methods of forming and patterning a nickel carbonyl layer are also disclosed.

7. 发明申请

US20050181081A1 Anti-dermatophytic preparation and use thereof 失效
标题翻译：抗皮肤真菌制剂及其用途
公开(公告)号：US20050181081A1
公开(公告)日：2005-08-18
申请号：US10761804
申请日：2004-01-21
申请人： Suman Khanuja , Pushplata Chaturvedi , Anil Singh , Ajit Shasany , Vinay Agarwal , Vivek Gupta , Subhash Gupta , Arun Tripathy , Anirban Pal , Dharmendra Saikia , Mahendra Darokar , Krishna Aggarwal , Ravi Bansal
发明人： Suman Khanuja , Pushplata Chaturvedi , Anil Singh , Ajit Shasany , Vinay Agarwal , Vivek Gupta , Subhash Gupta , Arun Tripathy , Anirban Pal , Dharmendra Saikia , Mahendra Darokar , Krishna Aggarwal , Ravi Bansal
IPC分类号： A61K36/00 , A61K36/534 , A61K36/54 , A61K36/8962 , A61K35/78
CPC分类号： A61K36/54 , A61K36/534 , A61K36/8962 , A61K2300/00
摘要： The present invention provides an improved preparation based on the synergistic action of garlic extract and essential oil of M. spicata var. Ganga or cinnamon oil against dermatophytic fungus. More particularly, the present invention relates to the synergistic enhancement of activity of a combination by menthyl acetate or Geraniol. The invention also provides a method of preparation of the synergistic combination and the shelf life observed to be more than one year. The cream based preparation is a potent anti-dermatophytic as described and illustrated by in vitro and in vivo evaluations.
摘要翻译：本发明提供了一种改进的制剂，其基于大蒜提取物和M.spicata var。的精油的协同作用。甘草或肉桂油抗皮肤真菌。更具体地，本发明涉及通过乙酸薄荷酯或香叶醇组合的协同增强活性。本发明还提供了一种制备协同组合的方法和观察到的一年以上的保质期。基于乳膏的制剂是有效的抗皮肤真菌病，如通过体外和体内评价所描述和说明的。

8. 发明申请

US20050100610A1 Use of bioactive fraction from cow urine distillate ('Go-mutra'} as a bio-enhancer of anti-infective, anti-cancer agents and nutrients 失效
$Use of bioactive fraction from cow urine distillate ('Go-mutra'} as a bio-enhancer of anti-infective, anti-cancer agents and nutrients$
标题翻译：使用来自牛尿馏分（“Go-mutra”）的生物活性成分作为抗感染，抗癌剂和营养物质的生物增强剂
公开(公告)号：US20050100610A1
公开(公告)日：2005-05-12
申请号：US10822790
申请日：2004-04-13
申请人： Suman Khanuja , Sushil Kumar , Ajit Shasany , Jai Arya , Mahendra Darokar , Monika Singh , Prachi Sinha , Soumya Awasthi , Subhash Gupta , Vivek Gupta , Madan Gupta , Ram Verma , Sweta Agarwal , Sunil Mansinghka , Suresh Dawle
发明人： Suman Khanuja , Sushil Kumar , Ajit Shasany , Jai Arya , Mahendra Darokar , Monika Singh , Prachi Sinha , Soumya Awasthi , Subhash Gupta , Vivek Gupta , Madan Gupta , Ram Verma , Sweta Agarwal , Sunil Mansinghka , Suresh Dawle
IPC分类号： A61K35/22 , A61K45/06 , A61P31/00 , A61P35/00 , A61K33/40 , A61K31/4965 , A61K31/4709 , A61K31/496 , A61K31/65
CPC分类号： A61K45/06 , A61K35/22 , A61K2300/00
摘要： The invention relates to a novel pharmaceutical composition comprising an effective amount of bio-active fraction from cow urine distillate as a bioavailability facilitator and pharmaceutically acceptable additives selected from anticancer compounds, antibiotics, drugs, therapeutic and nutraceutic agents, ions and similar molecules which are targeted to the living systems.
摘要翻译：本发明涉及一种新型药物组合物，其包含有效量的来自牛尿馏分的生物活性级分作为生物利用度促进剂和选自抗癌化合物，抗生素，药物，治疗和营养药物，离子和类似分子的药学上可接受的添加剂到生活系统。

9. 发明申请

US20050090102A1 Method of copper/copper surface bonding using a conducting polymer for application in IC chip bonding 有权
标题翻译：使用导电聚合物铜/铜表面键合方法应用于IC芯片接合
公开(公告)号：US20050090102A1
公开(公告)日：2005-04-28
申请号：US10988769
申请日：2004-11-15
申请人： Simon Chooi , Yakub Aliyu , Mei Zhou , John Sudijono , Subhash Gupta , Sudipto Roy , Paul Ho , Yi Xu
发明人： Simon Chooi , Yakub Aliyu , Mei Zhou , John Sudijono , Subhash Gupta , Sudipto Roy , Paul Ho , Yi Xu
IPC分类号： H01L21/44 , H01L21/50 , H01L21/60 , H01L23/48 , H01L23/485 , H01L23/52 , H01L29/40
CPC分类号： H01L24/13 , H01L24/11 , H01L24/81 , H01L2224/05001 , H01L2224/05023 , H01L2224/0508 , H01L2224/05568 , H01L2224/1147 , H01L2224/1308 , H01L2224/13083 , H01L2224/13147 , H01L2224/1319 , H01L2224/1329 , H01L2224/133 , H01L2224/81801 , H01L2924/00013 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01078 , H01L2924/014 , H01L2924/14 , H01L2924/15747 , H01L2924/00014 , H01L2224/13099 , H01L2924/00
摘要： A semiconductor chip having an exposed metal terminating pad thereover, and a separate substrate having a corresponding exposed metal bump thereover are provided. A conducting polymer plug is formed over the exposed metal terminating pad. A conforming interface layer is formed over the conducting polymer plug. The conducting polymer plug of the semiconductor chip is aligned with the corresponding metal bump. The conforming interface layer over the conducting polymer plug is mated with the corresponding metal bump. The conforming interface layer is thermally decomposed, adhering and permanently attaching the conducting polymer plug with the corresponding metal bump. Methods of forming and patterning a nickel carbonyl layer are also disclosed.
摘要翻译：提供了具有暴露的金属端接垫的半导体芯片，以及在其上具有对应的暴露的金属凸块的单独的基板。在暴露的金属端接垫上形成导电聚合物塞。在导电聚合物塞上形成一个符合标准的界面层。半导体芯片的导电聚合物插塞与相应的金属凸块对准。导电聚合物塞上的一致界面层与相应的金属凸块配合。一致的界面层被热分解，粘附和永久地附着导电聚合物塞与相应的金属凸块。还公开了形成和图案化羰基镍层的方法。

10. 发明授权

US06531390B2 Non-metallic barrier formations for copper damascene type interconnects 有权
公开(公告)号：US06531390B2
公开(公告)日：2003-03-11
申请号：US09925819
申请日：2001-08-10
申请人： Simon Chooi , Subhash Gupta , Mei-Sheng Zhou , Sangki Hong
发明人： Simon Chooi , Subhash Gupta , Mei-Sheng Zhou , Sangki Hong
IPC分类号： H01L218222
CPC分类号： H01L21/76832 , H01L21/76801 , H01L21/76807 , H01L21/76826 , H01L21/76831
摘要： A method for forming dual-damascene type conducting interconnects with non-metallic barriers that protect said interconnects from fluorine out-diffusion from surrounding low-k, fluorinated dielectric materials. One embodiment of the method is particularly suited for forming such interconnects in microelectronics fabrications of the sub 0.15 micron generation.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式