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1. 发明授权

US07674337B2 Gas manifolds for use during epitaxial film formation 有权
标题翻译：在外延膜形成期间使用的气体歧管
公开(公告)号：US07674337B2
公开(公告)日：2010-03-09
申请号：US11697516
申请日：2007-04-06
申请人： David Ishikawa , Craig R. Metzner , Ali Zojaji , Yihwan Kim , Arkadii V. Samoilov
发明人： David Ishikawa , Craig R. Metzner , Ali Zojaji , Yihwan Kim , Arkadii V. Samoilov
IPC分类号： C23C16/00 , C30B11/00
CPC分类号： C30B35/00 , C23C16/45561 , C30B25/14 , Y10T117/10
摘要： The present invention provides methods, systems, and apparatus for epitaxial film formation that includes an epitaxial chamber adapted to form an epitaxial layer on a substrate; a deposition gas manifold adapted to supply at least one deposition gas and a carrier gas to the epitaxial chamber; and an etchant gas manifold, separate from the deposition gas manifold, and adapted to supply at least one etchant gas and a carrier gas to the epitaxial chamber. Numerous other aspects are disclosed.
摘要翻译：本发明提供了用于外延膜形成的方法，系统和装置，其包括适于在衬底上形成外延层的外延腔; 适于将至少一个沉积气体和载气供应到所述外延室的沉积气体歧管; 以及与沉积气体歧管分开的蚀刻剂气体歧管，并且适于向外延室供应至少一种蚀刻剂气体和载气。公开了许多其他方面。

2. 发明授权

US08496780B2 Apparatus for the deposition of high dielectric constant films 有权
公开(公告)号：US08496780B2
公开(公告)日：2013-07-30
申请号：US11356725
申请日：2006-02-17
申请人： Bobby M. Ronsse , Craig R. Metzner , Richard Omar Collins
发明人： Bobby M. Ronsse , Craig R. Metzner , Richard Omar Collins
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： H01L21/02271 , C23C16/407 , C23C16/44 , C23C16/4401 , C23C16/4405 , C23C16/4409 , C23C16/4411 , C23C16/4412 , C23C16/448 , C23C16/4481 , C23C16/452 , C23C16/45561 , C23C16/45565 , C23C16/4557 , C23C16/4586 , C23C16/54 , H01L21/6719
摘要： An integrated deposition system is described that is capable of vaporizing low vapor pressure liquid precursors and conveying the vapor to a processing region to fabricate advanced integrated circuits. The integrated deposition system includes a heated exhaust system, a remote plasma generator, a processing chamber, a liquid delivery system, and a computer control module that together create a commercially viable and production worthy system for depositing high capacity dielectric materials from low vapor pressure precursors.

3. 发明授权

US08071167B2 Surface pre-treatment for enhancement of nucleation of high dielectric constant materials 失效
标题翻译：用于增强高介电常数材料成核的表面预处理
公开(公告)号：US08071167B2
公开(公告)日：2011-12-06
申请号：US12794047
申请日：2010-06-04
申请人： Shreyas S. Kher , Shixue Han , Craig R. Metzner
发明人： Shreyas S. Kher , Shixue Han , Craig R. Metzner
IPC分类号： C23C16/40
CPC分类号： H01L21/02312 , C23C16/0218 , C23C16/0227 , C23C16/405 , C23C16/509 , C23C16/56 , H01L21/02148 , H01L21/02181 , H01L21/02304 , H01L21/02307 , H01L21/31604 , H01L21/31612 , H01L21/3162 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31683
摘要： Embodiments of the present invention relate to a surface preparation treatment for the formation of thin films of high k dielectric materials over substrates. One embodiment of a method of forming a high k dielectric layer over a substrate includes pre-cleaning a surface of a substrate to remove native oxides, pre-treating the surface of the substrate with a hydroxylating agent, and forming a high k dielectric layer over the surface of the substrate. One embodiment of a method of forming a hafnium containing layer over a substrate includes introducing an acid solution to a surface of a substrate, introducing a hydrogen containing gas and an oxygen containing gas to the surface of the substrate, and forming a hafnium containing layer over the substrate.
摘要翻译：本发明的实施例涉及用于在基板上形成高k电介质材料的薄膜的表面处理。在衬底上形成高k电介质层的方法的一个实施例包括预清洁衬底的表面以去除天然氧化物，用羟基化剂预处理衬底的表面，以及形成高k电介质层衬底的表面。在衬底上形成含铪层的方法的一个实施方案包括将酸溶液引入衬底的表面，将含氢气体和含氧气体引入衬底的表面，并且形成含铪层底物。

4. 发明授权

US08382180B2 Advanced FI blade for high temperature extraction 有权
标题翻译：高级FI刀片用于高温提取
公开(公告)号：US08382180B2
公开(公告)日：2013-02-26
申请号：US12261574
申请日：2008-10-30
申请人： Dinesh Kanawade , Craig R. Metzner , Chandrasekhar Balasubramanyam
发明人： Dinesh Kanawade , Craig R. Metzner , Chandrasekhar Balasubramanyam
IPC分类号： B66F19/00
CPC分类号： H01L21/67742 , H01L21/68707
摘要： An apparatus for transferring substrates in a processing system where the substrate is exposed to high temperatures is provided. In one embodiment a blade for transporting a substrate is provided. The blade comprises a base having an arcuate lateral shoulder, a first finger extending outward from and perpendicular to the base, a second finger extending outward from the base and parallel to and spaced-apart from the first finger, a first support tab configured to support the substrate and positioned along the arcuate lateral shoulder, a second support tab configured to support the substrate and coupled with the first finger, and a third support tab configured to support the substrate coupled with the second finger, wherein the arcuate lateral shoulder extends from an outer edge of the first finger to an outer edge of the second finger.
摘要翻译：提供了一种用于在衬底暴露于高温的处理系统中传送衬底的设备。在一个实施例中，提供了用于输送基板的叶片。所述刀片包括具有弓形侧肩部的基部，从所述基部向外延伸并垂直于所述基部的第一指状物，从所述基部向外延伸并平行于所述第一手指并与所述第一手指间隔开的第二手指;第一支撑舌片，所述基板并沿着所述弓形侧肩部定位，构造成支撑所述基板并且与所述第一指状物联接的第二支撑突出部以及被配置为支撑与所述第二手指联接的所述基板的第三支撑突出部，其中所述弓形横向肩部从第一手指的外边缘到第二手指的外边缘。

5. 发明授权

US07569500B2 ALD metal oxide deposition process using direct oxidation 失效
标题翻译： ALD金属氧化物沉积工艺使用直接氧化
公开(公告)号：US07569500B2
公开(公告)日：2009-08-04
申请号：US11421283
申请日：2006-05-31
申请人： Craig R. Metzner , Shreyas S. Kher , Vidyut Gopal , Shixue Han , Shankarram A. Athreya
发明人： Craig R. Metzner , Shreyas S. Kher , Vidyut Gopal , Shixue Han , Shankarram A. Athreya
IPC分类号： H01L21/31
CPC分类号： H01L21/02181 , C23C16/405 , C23C16/452 , C23C16/45542 , C23C16/45553 , H01L21/02274 , H01L21/0228 , H01L21/28562 , H01L21/31604 , H01L21/318
摘要： Methods of forming metal compounds such as metal oxides or metal nitrides by sequentially introducing and then reacting metal organic compounds with ozone one or with oxygen radicals or nitrogen radicals formed in a remote plasma chamber. The metal compounds have surprisingly and significantly improved uniformity when deposited by atomic layer deposition with cycle times of at least 10 seconds. The metal compounds also do not contain detectable carbon when the metal organic compound is vaporized at process conditions in the absence of solvents or excess ligands.
摘要翻译：通过依次将金属有机化合物与臭氧一起或在远离等离子体室中形成的氧自由基或氮自由基反应而形成金属化合物如金属氧化物或金属氮化物的方法。当通过原子层沉积沉积至少10秒的循环时间时，金属化合物具有惊人的和显着改善的均匀性。当金属有机化合物在不存在溶剂或过量配体的过程条件下蒸发时，金属化合物也不含可检测的碳。

6. 发明授权

US08343279B2 Apparatuses for atomic layer deposition 有权
标题翻译：用于原子层沉积的装置
公开(公告)号：US08343279B2
公开(公告)日：2013-01-01
申请号：US11127753
申请日：2005-05-12
申请人： Nyi Oo Myo , Kenric Choi , Shreyas Kher , Pravin Narwankar , Steve Poppe , Craig R. Metzner , Paul Deaten
发明人： Nyi Oo Myo , Kenric Choi , Shreyas Kher , Pravin Narwankar , Steve Poppe , Craig R. Metzner , Paul Deaten
IPC分类号： C23C16/00
CPC分类号： C23C16/4488 , C23C16/0272 , C23C16/40 , C23C16/401 , C23C16/405 , C23C16/4412 , C23C16/45529 , C23C16/45531 , C23C16/45544 , C23C16/45582 , C23C16/56 , Y02T50/67 , Y10T137/0357 , Y10T137/0396 , Y10T137/2087
摘要： Embodiments of the invention provide apparatuses and methods for depositing materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one embodiment, a chamber contains a substrate support with a receiving surface and a chamber lid containing an expanding channel formed within a thermally insulating material. The chamber further includes at least one conduit coupled to a gas inlet within the expanding channel and positioned to provide a gas flow through the expanding channel in a circular direction, such as a vortex, a helix, a spiral or derivatives thereof. The expanding channel may be formed directly within the chamber lid or formed within a funnel liner attached thereon. The chamber may contain a retaining ring, an upper process liner, a lower process liner or a slip valve liner. Liners usually have a polished surface finish and contain a thermally insulating material such as fused quartz or ceramic. In an alternative embodiment, a deposition system contains a catalytic water vapor generator connected to an ALD chamber.
摘要翻译：本发明的实施例提供了在诸如原子层沉积（ALD）的气相沉积工艺期间在衬底上沉积材料的设备和方法。在一个实施例中，腔室包含具有接收表面的衬底支撑件和包含形成在绝热材料内的扩张通道的腔室盖。腔室还包括至少一个管道，其连接到膨胀通道内的气体入口并且定位成提供在圆形方向（例如涡流，螺旋，螺旋或其衍生物）上的气流通过膨胀通道。膨胀通道可以直接形成在室盖内，或者形成在其内附着的漏斗衬套中。腔室可以包含保持环，上加工衬套，下工艺衬垫或滑阀衬套。衬里通常具有抛光表面光洁度并且包含绝热材料，例如熔融石英或陶瓷。在替代实施例中，沉积系统包含连接到ALD室的催化水蒸汽发生器。

7. 发明授权

US08282992B2 Methods for atomic layer deposition of hafnium-containing high-K dielectric materials 失效
标题翻译：含铪高K介电材料的原子层沉积方法
公开(公告)号：US08282992B2
公开(公告)日：2012-10-09
申请号：US11925681
申请日：2007-10-26
申请人： Nyi Oo Myo , Kenric Cho , Shreyas Kher , Pravin Narwankar , Steve Poppe , Craig R. Metzner , Paul Deaten
发明人： Nyi Oo Myo , Kenric Cho , Shreyas Kher , Pravin Narwankar , Steve Poppe , Craig R. Metzner , Paul Deaten
IPC分类号： C23C16/00
CPC分类号： C23C16/4488 , C23C16/0272 , C23C16/40 , C23C16/401 , C23C16/405 , C23C16/4412 , C23C16/45529 , C23C16/45531 , C23C16/45544 , C23C16/45582 , C23C16/56 , Y02T50/67 , Y10T137/0357 , Y10T137/0396 , Y10T137/2087
摘要： Embodiments of the invention provide methods for depositing materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one embodiment, a chamber contains a substrate support with a receiving surface and a chamber lid containing an expanding channel formed within a thermally insulating material. The chamber further includes at least one conduit coupled to a gas inlet within the expanding channel and positioned to provide a gas flow through the expanding channel in a circular direction, such as a vortex, a helix, a spiral, or derivatives thereof. The expanding channel may be formed directly within the chamber lid or formed within a funnel liner attached thereon. The chamber may contain a retaining ring, an upper process liner, a lower process liner or a slip valve liner. Liners usually have a polished surface finish and contain a thermally insulating material such as fused quartz or ceramic. In an alternative embodiment, a deposition system contains a catalytic water vapor generator connected to an ALD chamber.
摘要翻译：本发明的实施例提供了在诸如原子层沉积（ALD）的气相沉积工艺期间在衬底上沉积材料的方法。在一个实施例中，腔室包含具有接收表面的衬底支撑件和包含形成在绝热材料内的扩张通道的腔室盖。腔室还包括至少一个管道，其连接到膨胀通道内的气体入口并且定位成提供在圆形方向（例如涡流，螺旋，螺旋或其衍生物）上的气体流过膨胀通道。膨胀通道可以直接形成在室盖内，或者形成在其内附着的漏斗衬套中。腔室可以包含保持环，上加工衬套，下工艺衬垫或滑阀衬套。衬里通常具有抛光表面光洁度并且包含绝热材料，例如熔融石英或陶瓷。在替代实施例中，沉积系统包含连接到ALD室的催化水蒸汽发生器。

8. 发明申请

US20100239758A1 SURFACE PRE-TREATMENT FOR ENHANCEMENT OF NUCLEATION OF HIGH DIELECTRIC CONSTANT MATERIALS 失效
标题翻译：用于增强高介电常数材料的表面预处理
公开(公告)号：US20100239758A1
公开(公告)日：2010-09-23
申请号：US12794047
申请日：2010-06-04
申请人： Shreyas S. Kher , Shixue Han , Craig R. Metzner
发明人： Shreyas S. Kher , Shixue Han , Craig R. Metzner
IPC分类号： C23C16/42 , C23C16/40
CPC分类号： H01L21/02312 , C23C16/0218 , C23C16/0227 , C23C16/405 , C23C16/509 , C23C16/56 , H01L21/02148 , H01L21/02181 , H01L21/02304 , H01L21/02307 , H01L21/31604 , H01L21/31612 , H01L21/3162 , H01L21/31637 , H01L21/31641 , H01L21/31645 , H01L21/31683
摘要： Embodiments of the present invention relate to a surface preparation treatment for the formation of thin films of high k dielectric materials over substrates. One embodiment of a method of forming a high k dielectric layer over a substrate includes pre-cleaning a surface of a substrate to remove native oxides, pre-treating the surface of the substrate with a hydroxylating agent, and forming a high k dielectric layer over the surface of the substrate. One embodiment of a method of forming a hafnium containing layer over a substrate includes introducing an acid solution to a surface of a substrate, introducing a hydrogen containing gas and an oxygen containing gas to the surface of the substrate, and forming a hafnium containing layer over the substrate.
摘要翻译：本发明的实施例涉及用于在基板上形成高k电介质材料的薄膜的表面处理。在衬底上形成高k电介质层的方法的一个实施例包括预清洁衬底的表面以去除天然氧化物，用羟基化剂预处理衬底的表面，以及形成高k电介质层衬底的表面。在衬底上形成含铪层的方法的一个实施方案包括将酸溶液引入衬底的表面，将含氢气体和含氧气体引入衬底的表面，并且形成含铪层底物。

9. 发明授权

US07067439B2 ALD metal oxide deposition process using direct oxidation 有权
公开(公告)号：US07067439B2
公开(公告)日：2006-06-27
申请号：US10247103
申请日：2002-09-19
申请人： Craig R. Metzner , Shreyas S. Kher , Vidyut Gopal , Shixue Han , Shankarram A. Athreya
发明人： Craig R. Metzner , Shreyas S. Kher , Vidyut Gopal , Shixue Han , Shankarram A. Athreya
IPC分类号： H01L21/31
CPC分类号： H01L21/02181 , C23C16/405 , C23C16/452 , C23C16/45542 , C23C16/45553 , H01L21/02274 , H01L21/0228 , H01L21/28562 , H01L21/31604 , H01L21/318
摘要： Methods of forming metal compounds such as metal oxides or metal nitrides by sequentially introducing and then reacting metal organic compounds with ozone or with oxygen radicals or nitrogen radicals formed in a remote plasma chamber. The metal compounds have surprisingly and significantly improved uniformity when deposited by atomic layer deposition with cycle times of at least 10 seconds. The metal compounds also do not contain detectable carbon when the metal organic compound is vaporized at process conditions in the absence of solvents or excess ligands.

10. 发明授权

US07569501B2 ALD metal oxide deposition process using direct oxidation 失效
标题翻译： ALD金属氧化物沉积工艺使用直接氧化
公开(公告)号：US07569501B2
公开(公告)日：2009-08-04
申请号：US11421293
申请日：2006-05-31
申请人： Craig R. Metzner , Shreyas S. Kher , Vidyut Gopal , Shixue Han , Shankarram A. Athreya
发明人： Craig R. Metzner , Shreyas S. Kher , Vidyut Gopal , Shixue Han , Shankarram A. Athreya
IPC分类号： H01L21/31
CPC分类号： H01L21/02181 , C23C16/405 , C23C16/452 , C23C16/45542 , C23C16/45553 , H01L21/02274 , H01L21/0228 , H01L21/28562 , H01L21/31604 , H01L21/318
摘要： Embodiments of the invention provide methods for forming hafnium materials, such as oxides and nitrides, by sequentially exposing a substrate to hafnium precursors and active oxygen or nitrogen species (e.g., ozone, oxygen radicals, or nitrogen radicals). The deposited hafnium materials have significantly improved uniformity when deposited by these atomic layer deposition (ALD) processes. In one embodiment, an ALD chamber contains an expanding channel having a bottom surface that is sized and shaped to substantially cover a substrate positioned on a substrate pedestal. During an ALD process for forming hafnium materials, process gases form a vortex flow pattern while passing through the expanding channel and sweep across the substrate surface. The substrate is sequentially exposed to chemical precursors that are pulsed into the process chamber having the vortex flow.
摘要翻译：本发明的实施方案通过将底物顺序地暴露于铪前体和活性氧或氮物质（例如臭氧，氧自由基或氮自由基）来提供用于形成铪材料如氧化物和氮化物的方法。当通过这些原子层沉积（ALD）工艺沉积时，沉积的铪材料具有显着改善的均匀性。在一个实施例中，ALD室包含具有底表面的扩张通道，该底表面的尺寸和形状基本上覆盖位于基板基座上的基板。在用于形成铪材料的ALD工艺中，工艺气体在通过扩张通道并形成衬底表面时形成涡流模式。将衬底依次暴露于脉冲进入具有涡流的处理室的化学前体。

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