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1. 发明授权

US5543590A Object position detector with edge motion feature 失效
标题翻译：具有边缘运动特征的物体位置检测器
公开(公告)号：US5543590A
公开(公告)日：1996-08-06
申请号：US300630
申请日：1994-09-02
申请人： David Gillespie , Timothy P. Allen , Robert J. Miller , Federico Faggin
发明人： David Gillespie , Timothy P. Allen , Robert J. Miller , Federico Faggin
IPC分类号： G06F3/044 , G06F3/023 , G06F3/033 , G06F3/041 , G06F3/048 , G06K9/00 , G08C21/00 , G09G5/00
CPC分类号： G06F3/044 , G06F3/041 , G06F3/0488 , G06F3/04883 , G06F3/04892 , G06K9/00335
摘要： A proximity sensor system includes a sensor matrix array having a characteristic capacitance on horizontal and vertical conductors connected to sensor pads. The capacitance changes as a function of the proximity of an object or objects to the sensor matrix. The change in capacitance of each node in both the X and Y directions of the matrix due to the approach of an object is converted to a set of voltages in the X and Y directions. These voltages are processed by circuitry to develop electrical signals representative of the centroid of the profile of the object, i.e, its position in the X and Y dimensions. Noise reduction and background level setting techniques inherently available in the architecture are employed.
摘要翻译：接近传感器系统包括具有连接到传感器焊盘的水平和垂直导体上的特征电容的传感器矩阵阵列。电容根据物体或传感器矩阵的接近度而变化。由于物体的接近，矩阵的X和Y方向上的每个节点的电容的变化被转换成在X和Y方向上的一组电压。这些电压由电路处理以产生表示物体轮廓的质心的电信号，即其在X和Y尺寸中的位置。采用本构架中固有可用的降噪和背景设置技术。

2. 发明授权

US5914465A Object position detector 失效
标题翻译：对象位置检测器
公开(公告)号：US5914465A
公开(公告)日：1999-06-22
申请号：US300387
申请日：1994-09-02
申请人： Timothy P. Allen , David Gillespie , Robert J. Miller , Gunter Steinbach
发明人： Timothy P. Allen , David Gillespie , Robert J. Miller , Gunter Steinbach
IPC分类号： G06F3/044 , G06F1/16 , G06F3/033 , G06F3/041 , G06F3/048 , G08C21/00 , H03M11/00
CPC分类号： G06F3/044 , G06F1/1626 , G06F3/03547 , G06F3/041
摘要： A proximity sensor system includes a sensor matrix array having a characteristic capacitance on horizontal and vertical conductors connected to sensor pads. The capacitance changes as a function of the proximity of an object or objects to the sensor matrix. The change in capacitance of each node in both the X and Y directions of the matrix due to the approach of an object is converted to a set of voltages in the X and Y directions. These voltages are processed by digital circuitry to develop electrical signals representative of the centroid of the profile of the object, i.e, its position in the X and Y dimensions. Noise reduction and background level setting techniques inherently available in the architecture are employed.
摘要翻译：接近传感器系统包括具有连接到传感器焊盘的水平和垂直导体上的特征电容的传感器矩阵阵列。电容根据物体或传感器矩阵的接近度而变化。由于物体的接近，矩阵的X和Y方向上的每个节点的电容的变化被转换成在X和Y方向上的一组电压。这些电压由数字电路处理，以形成表示物体轮廓的质心的电信号，即其在X和Y尺寸中的位置。采用本构架中固有可用的降噪和背景设置技术。

3. 发明授权

US06239389B1 Object position detection system and method 有权
标题翻译：对象位置检测系统及方法
公开(公告)号：US06239389B1
公开(公告)日：2001-05-29
申请号：US09337862
申请日：1999-06-21
申请人： Timothy P. Allen , David Gillespie , Robert J. Miller , Günter Steinbach
发明人： Timothy P. Allen , David Gillespie , Robert J. Miller , Günter Steinbach
IPC分类号： G08C2100
CPC分类号： G06F3/041 , G06F1/1626 , G06F3/03547 , G06F3/044
摘要： A proximity sensor system includes a sensor matrix array having a characteristic capacitance on horizontal and vertical conductors connected to sensor pads. The capacitance changes as a function of the proximity of an object or objects to the sensor matrix. The change in capacitance of each node in both the X and Y directions of the matrix due to the approach of an object is converted to a set of voltages in the X and Y directions. These voltages are processed by digital circuitry to develop electrical signals representative of the centroid of the profile of the object, i.e, its position in the X and Y dimensions. Noise reduction and background level setting techniques inherently available in the architecture are employed.
摘要翻译：接近传感器系统包括具有连接到传感器焊盘的水平和垂直导体上的特征电容的传感器矩阵阵列。电容根据物体或传感器矩阵的接近度而变化。由于物体的接近，矩阵的X和Y方向上的每个节点的电容的变化被转换成在X和Y方向上的一组电压。这些电压由数字电路处理，以形成表示物体轮廓的质心的电信号，即其在X和Y尺寸中的位置。采用本构架中固有可用的降噪和背景设置技术。

4. 发明授权

US5543588A Touch pad driven handheld computing device 失效
标题翻译：触摸板驱动的手持式计算设备
公开(公告)号：US5543588A
公开(公告)日：1996-08-06
申请号：US161671
申请日：1993-12-03
申请人： Stephen Bisset , Robert J. Miller , Timothy P. Allen , Gunter Steinbach
发明人： Stephen Bisset , Robert J. Miller , Timothy P. Allen , Gunter Steinbach
IPC分类号： G06F3/044 , G06F1/16 , G06F3/033 , G06F3/041 , G06F3/048 , G08C21/00 , G09G5/00
CPC分类号： G06F3/044 , G06F1/1626 , G06F1/169 , G06F3/03547 , G06F3/041 , G06F3/04883
摘要： A handheld computing device comprises a thin enclosure having two opposing major faces. A display screen is disposed on a first one of the major opposing faces of the enclosure and a touch-sensitive object position detector input device is disposed on a second one of the major opposing faces of the enclosure. Computing device circuitry, circuitry for interfacing the touch-sensitive object position detector to the computing device circuitry, and circuitry for driving the display screen are all disposed within the enclosure.
摘要翻译：手持计算设备包括具有两个相对的主面的薄外壳。显示屏布置在外壳的主要相对面的第一个上，并且触敏物体位置检测器输入装置设置在外壳的主要相对面的第二个上。计算设备电路，用于将触敏物体位置检测器连接到计算设备电路的电路以及用于驱动显示屏的电路都被设置在外壳内。

5. 发明授权

US5495077A Object position and proximity detector 失效
标题翻译：物体位置和接近检测器
公开(公告)号：US5495077A
公开(公告)日：1996-02-27
申请号：US252969
申请日：1994-06-02
申请人： Robert J. Miller , Stephen Bisset , Timothy P. Allen , Gunter Steinbach
发明人： Robert J. Miller , Stephen Bisset , Timothy P. Allen , Gunter Steinbach
IPC分类号： G06F1/16 , G06F3/033 , G06F3/041 , G06F3/044 , G06F3/048 , G08C21/00 , H03M11/00
CPC分类号： G06F3/041 , G06F1/1626 , G06F3/03547 , G06F3/044 , G06F2203/04101
摘要： A proximity sensor system includes a sensor matrix array having a characteristic capacitance on horizontal and vertical conductors connected to sensor pads. The capacitance changes as a function of the proximity of an object or objects to the sensor matrix. The change in capacitance of each node in both the X and Y directions of the matrix due to the approach of an object is converted to a set of voltages in the X and Y directions. These voltages are processed by analog circuitry to develop electrical signals representative of the centroid of the profile of the object, i.e, its position in the X and Y dimensions. The profile of position may also be integrated to provide Z-axis (pressure) information.
摘要翻译：接近传感器系统包括具有连接到传感器焊盘的水平和垂直导体上的特征电容的传感器矩阵阵列。电容根据物体或传感器矩阵的接近度而变化。由于物体的接近，矩阵的X和Y方向上的每个节点的电容的变化被转换成在X和Y方向上的一组电压。这些电压由模拟电路处理，以开发代表物体轮廓的质心的电信号，即其在X和Y尺寸中的位置。位置的轮廓也可以被集成以提供Z轴（压力）信息。

6. 发明授权

US5374787A Object position detector 失效
标题翻译：对象位置检测器
公开(公告)号：US5374787A
公开(公告)日：1994-12-20
申请号：US115743
申请日：1993-08-31
申请人： Robert J. Miller , Stephen Bisset , Timothy P. Allen , Gunter Steinbach
发明人： Robert J. Miller , Stephen Bisset , Timothy P. Allen , Gunter Steinbach
IPC分类号： G06F1/16 , G06F3/033 , G06F3/041 , G06F3/044 , G06F3/048 , G08C21/00 , H03M11/00
CPC分类号： G06F3/041 , G06F1/1626 , G06F3/03547 , G06F3/044 , G06F2203/04101
摘要： A proximity sensor system includes a sensor matrix array having a characteristic capacitance on horizontal and vertical conductors connected to sensor pads. The capacitance changes as a function of the proximity of an object or objects to the sensor matrix. The change in capacitance of each node in both the X and Y directions of the matrix due to the approach of an object is converted to a set of voltages in the X and Y directions. These voltages are processed by analog circuitry to develop electrical signals representative of the centroid of the profile of the object, i.e., its position in the X and Y dimensions. The profile of position may also be integrated to provide Z-axis (pressure) information.
摘要翻译：接近传感器系统包括具有连接到传感器焊盘的水平和垂直导体上的特征电容的传感器矩阵阵列。电容根据物体或传感器矩阵的接近度而变化。由于物体的接近，矩阵的X和Y方向上的每个节点的电容的变化被转换成在X和Y方向上的一组电压。这些电压由模拟电路处理以产生表示物体轮廓的质心的电信号，即其在X和Y尺寸中的位置。位置的轮廓也可以被集成以提供Z轴（压力）信息。

7. 发明授权

US08760157B2 Multiferroic antenna/sensor 有权
标题翻译：多功能天线/传感器
公开(公告)号：US08760157B2
公开(公告)日：2014-06-24
申请号：US12561498
申请日：2009-09-17
申请人： Robert J. Miller , William P. Geren , Stephen P. Hubbell
发明人： Robert J. Miller , William P. Geren , Stephen P. Hubbell
IPC分类号： G01R33/02
CPC分类号： G01R33/18 , H01Q1/32 , H01Q1/52 , H01Q17/00
摘要： A multiferroic antenna and sensor where the sensor includes a multiferroic stack of multiple connected multiferroic layer-pairs, each multiferroic layer-pair comprising an alternating layer of a magnetostrictive material and a piezoelectric material bonded together enabling a high signal sensitivity, a magnetic field of an incident signal causing mechanical strain in the magnetostrictive material layers that strains adjacent piezoelectric material layers producing an electrical voltage in each multiferroic layer-pair proportional to the incident signal. An output of the multiferroic stack comprises the electrical voltage amplified proportional to a total number of multiple connected multiferroic layer-pairs in the multiferroic stack.
摘要翻译：一种多铁性天线和传感器，其中传感器包括多层连接的多铁层对的多层叠层，每个多层层对包括磁致伸缩材料的交替层和结合在一起的压电材料，能够实现高信号灵敏度，入射信号引起磁致伸缩材料层中的机械应变，使得相邻的压电材料层产生与入射信号成比例的每个多铁层对中的电压。多层堆叠的输出包括与多层堆叠中的多个连接的多铁层对的总数成比例放大的电压。

8. 发明申请

US20130330916A1 METHODS OF FORMING HIGH MOBILITY FIN CHANNELS ON THREE DIMENSIONAL SEMICONDUCTOR DEVICES 有权
标题翻译：在三维半导体器件上形成高移动性融合通道的方法
公开(公告)号：US20130330916A1
公开(公告)日：2013-12-12
申请号：US13493021
申请日：2012-06-11
申请人： Daniel T. Pham , Robert J. Miller , Kingsuk Maitra
发明人： Daniel T. Pham , Robert J. Miller , Kingsuk Maitra
IPC分类号： H01L21/205
CPC分类号： H01L29/1054 , H01L29/66795 , H01L29/785
摘要： Disclosed herein are various methods of forming high mobility fin channels on three dimensional semiconductor devices, such as, for example, FinFET semiconductor devices. In one example, the method includes forming a plurality of spaced-apart trenches in a semiconducting substrate, wherein the trenches define an original fin structure for the device, and wherein a portion of a mask layer is positioned above the original fin structure, forming a compressively-stressed material in the trenches and adjacent the portion of mask layer, after forming the compressively-stressed material, removing the portion of the mask layer to thereby expose an upper surface of the original fin structure, and forming a final fin structure above the exposed surface of the original fin structure.
摘要翻译：本文公开了在三维半导体器件（例如FinFET半导体器件）上形成高迁移率鳍通道的各种方法。在一个示例中，该方法包括在半导体衬底中形成多个间隔开的沟槽，其中沟槽限定用于器件的原始鳍状结构，并且其中掩模层的一部分位于原始鳍结构的上方，形成在形成压缩应力材料之后，在沟槽中并与掩模层的部分相邻的压缩应力材料，去除掩模层的部分，从而暴露原始鳍状结构的上表面，并且在裸露表面的原有翅片结构。

9. 发明授权

US08466034B2 Method of manufacturing a finned semiconductor device structure 有权
标题翻译：制造翅片半导体器件结构的方法
公开(公告)号：US08466034B2
公开(公告)日：2013-06-18
申请号：US12749220
申请日：2010-03-29
申请人： Witold Maszara , Robert J. Miller
发明人： Witold Maszara , Robert J. Miller
IPC分类号： H01L21/76
CPC分类号： H01L29/66545 , H01L29/66795
摘要： A method of manufacturing a finned semiconductor device structure is provided. The method begins by providing a substrate having bulk semiconductor material. The method continues by forming a semiconductor fin structure from the bulk semiconductor material, depositing an insulating material overlying the semiconductor fin structure such that the insulating material fills space adjacent to the semiconductor fin structure, and planarizing the deposited insulating material and the semiconductor fin structure to create a flat surface. Thereafter, a replacement gate procedure is performed to form a gate structure transversely overlying the semiconductor fin structure.
摘要翻译：提供一种制造翅片半导体器件结构的方法。该方法开始于提供具有体半导体材料的衬底。该方法继续通过从体半导体材料形成半导体鳍结构，沉积覆盖半导体鳍结构的绝缘材料，使得绝缘材料填充与半导体鳍结构相邻的空间，并将沉积的绝缘材料和半导体鳍结构平坦化为创建一个平坦的表面。此后，执行替换门程序以形成横向覆盖半导体鳍结构的栅极结构。

10. 发明授权

US08354719B2 Finned semiconductor device with oxygen diffusion barrier regions, and related fabrication methods 有权
标题翻译：具有氧扩散阻挡区域的翅片半导体器件及相关制造方法
公开(公告)号：US08354719B2
公开(公告)日：2013-01-15
申请号：US12708213
申请日：2010-02-18
申请人： Kisik Choi , Robert J. Miller
发明人： Kisik Choi , Robert J. Miller
IPC分类号： H01L27/12
CPC分类号： H01L29/66795 , H01L21/76229 , H01L29/66545 , H01L29/785
摘要： A semiconductor device and related fabrication methods are provided. One exemplary fabrication method forms a fin arrangement overlying an oxide layer, where the fin arrangement includes one or more semiconductor fin structures. The method continues by nitriding exposed portions of the oxide layer without nitriding the one or more semiconductor fin structures, resulting in nitrided portions of the oxide layer. Thereafter, a gate structure is formed transversely overlying the fin arrangement, and overlying the exposed portions of the oxide layer. The nitrided portions of the oxide layer substantially inhibit diffusion of oxygen from the oxide layer into the gate structure.
摘要翻译：提供半导体器件及相关的制造方法。一种示例性的制造方法形成覆盖氧化物层的翅片布置，其中翅片布置包括一个或多个半导体翅片结构。该方法通过氮化氧化物层的暴露部分而不渗透一个或多个半导体鳍结构，导致氧化物层的氮化部分继续。此后，栅极结构横向地形成在翅片布置上，并且覆盖在氧化物层的暴露部分上。氧化物层的氮化部分基本上抑制氧从氧化物层扩散到栅极结构中。

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