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    • 2. 发明授权
    • Differentially pumped optical amplifer and mopa device
    • 差分泵浦光学放大器和mopa器件
    • US5539571A
    • 1996-07-23
    • US202359
    • 1994-02-28
    • David F. WelchDonald R. ScifresRobert G. WaartsDavid G. MehuysAmos A. HardyRoss A. Parke
    • David F. WelchDonald R. ScifresRobert G. WaartsDavid G. MehuysAmos A. HardyRoss A. Parke
    • H01S5/026H01S5/042H01S5/062H01S5/10H01S5/12H01S5/125H01S5/16H01S5/187H01S5/20H01S5/50H01S3/00
    • H01S5/0425H01S5/026H01S5/20H01S5/50H01S2301/163H01S2301/166H01S5/0267H01S5/0422H01S5/06243H01S5/1014H01S5/1053H01S5/1064H01S5/1085H01S5/12H01S5/125H01S5/16H01S5/187H01S5/2036H01S5/5018
    • An optical amplifier semiconductor device which is differentially pumped and a master oscillator power amplifier (MOPA) device employing such an amplifier. The amplifier allows the light propagating therein to diverge along at least part of its length, and may be a flared amplifier having a gain region that increases in width toward its output at a rate that equals or exceeds the divergence of the light. The amplifier is pumped with a current density at its input end which is smaller than the current density used to pump the output end for maintaining coherence of the beam to high power levels. Differential pumping may be both longitudinal and lateral within the amplifier. A single mode preamplifier section may be optically coupled to the input end of the amplifier. The amplifier input may have a width which is the same as or wider than that of the preamplifier output. The preamplifier may have a constant mode width or may be tapered to alter the divergence of the beams provided to the amplifier section. The laser oscillator in the MOPA device may be a single mode DBR laser diode monolithically integrated on the same substrate as the optical amplifier. Laser sources external to an amplifier chip may also be used. The input portion of the amplifier or the preamplifier section, if present, may be modulated. The laser oscillator might also be modulated if it has a high Q cavity. Tunable laser oscillators are also disclosed.
    • 差分泵浦的光放大器半导体器件和采用这种放大器的主振荡器功率放大器(MOPA)器件。 放大器允许其中传播的光沿其长度的至少一部分发散,并且可以是具有增益区域的扩张放大器,该增益区域以等于或超过光的发散度的速率朝向其输出增加。 放大器在其输入端以电流密度泵送,该电流密度小于用于泵浦输出端的电流密度,以将光束的相干性保持在高功率水平。 差分泵浦可以在放大器内部纵向和横向两者。 单模前置放大器部分可以光耦合到放大器的输入端。 放大器输入可以具有与前置放大器输出的宽度相同或更宽的宽度。 前置放大器可以具有恒定的模式宽度,或者可以是锥形的,以改变提供给放大器部分的光束的发散度。 MOPA器件中的激光振荡器可以是单模DBR激光二极管,其单片集成在与光放大器相同的衬底上。 还可以使用放大器芯片外部的激光源。 放大器或前置放大器部分的输入部分(如果存在)可以被调制。 如果激光振荡器具有高Q腔,则也可能会被调制。 还公开了可调谐激光振荡器。
    • 3. 发明授权
    • Antiguided semiconductor laser array with edge reflectors
    • 具有边缘反射器的反射半导体激光器阵列
    • US5159604A
    • 1992-10-27
    • US737463
    • 1991-07-29
    • David G. MehuysAmos A. HardyDavid F. WelchRobert G. WaartsDonald R. Scifres
    • David G. MehuysAmos A. HardyDavid F. WelchRobert G. WaartsDonald R. Scifres
    • H01S5/40
    • H01S5/4031
    • In a semiconductor laser array structure in which antiguided regions between high effective refractive index waveguide regions experience greater gain then the waveguide regions, structures introduced at the sides of the array, next to the edgemost waveguides and not on the array period, reflect laterally transmitted radiation back toward the center of the array. The edge reflecting structures may be waveguide regions having widths of (m'+1/2) half-wavelengths, where "m'" is zero or a positive integer, compared to array waveguides with width m, where "m" is an integer not necessarily equal to "m'". The edge reflecting structures may also be stacks of such waveguides, where the regions between the edge waveguides are of a width substantially equal to (n'+1/2) half-wavelengths, compared to antiguide element widths of n half-wavelengths. The two integers n and n' may be, but are not necessarily, equal. Alternatively, the edge reflectors can be mirrors fabricated at the side edges of the array or by disordering the active region beyond the edgemost waveguides to form a refractive index step. The mirrors should be positioned a distance substantially a/2 from the edgemost emitters, where "a" is the array period.
    • 在半导体激光器阵列结构中,其中高有效折射率波导区域之间的防护区域具有更大的增益,然后波导区域,引导在阵列侧面的结构,在边缘波导旁边,而不是阵列周期,反射横向透射辐射 回到阵列的中心。 与具有宽度m的阵列波导相比,边缘反射结构可以是宽度为(m'+ 1/2)半波长的波导区域,其中“m”为零或正整数,其中“m”为整数 不一定等于“m”。 边缘反射结构也可以是这样的波导的堆叠,其中边缘波导之间的区域的宽度基本上等于(n'+ 1/2)个半波长,与n个半波长的防卫元件宽度相比。 两个整数n和n'可以是但并不一定相等。 或者,边缘反射器可以是在阵列的侧边缘处制造的反射镜,或者通过使有源区域超出边缘波导的方式来形成折射率步骤。 镜子应该与edgemost发射器的距离基本上为1/2,其中“a”是阵列周期。