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1. 发明申请

US20090121210A1 FORMATION OF SELF-ASSEMBLED MONOLAYERS ON SILICON SUBSTRATES 审中-公开
标题翻译：在硅衬底上形成自组装单层
公开(公告)号：US20090121210A1
公开(公告)日：2009-05-14
申请号：US12050364
申请日：2008-03-18
申请人： David F. Bocian , Werner G. Kuhr , Jonathan S. Lindsey , Rajeeve B. Dabke , Zhiming Liu
发明人： David F. Bocian , Werner G. Kuhr , Jonathan S. Lindsey , Rajeeve B. Dabke , Zhiming Liu
IPC分类号： H01L45/00 , C07D207/46 , C07F15/02 , C07F7/02 , C07F7/30 , H01L25/00
CPC分类号： G11C13/0019 , B05D1/185 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G11B9/14 , G11B9/149 , G11C13/0014 , G11C13/025 , H01L51/0075 , H01L51/0077 , H01L51/0595
摘要： This invention provides a new method of forming a self-assembling monolayer (SAM) of alcohol-terminated or thiol-terminated organic molecules (e.g. ferrocenes, porphyrins, etc.) on a silicon or other group IV element surface. The assembly is based on the formation of an E-O— or an E-S— bond where E is the group IV element (e.g. Si, Ge, etc.). The procedure has been successfully used on both P- and n-type group IV element surfaces. The assemblies are stable under ambient conditions and can be exposed to repeated electrochemical cycling.
摘要翻译：本发明提供了一种在硅或其它IV族元素表面上形成醇封端或硫醇封端的有机分子（例如二茂铁，卟啉等）的自组装单层（SAM）的新方法。该组合基于形成E-O-或E-S-键，其中E是IV族元素（例如Si，Ge等）。该程序已经成功地用于P型和N型IV族元件表面。组件在环境条件下是稳定的并且可以暴露于重复的电化学循环。

2. 发明授权

US07348206B2 Formation of self-assembled monolayers of redox SAMs on silicon for molecular memory applications 失效
标题翻译：在硅上形成用于分子记忆应用的氧化还原SAM的自组装单层
公开(公告)号：US07348206B2
公开(公告)日：2008-03-25
申请号：US10040059
申请日：2001-10-26
申请人： David F. Bocian , Werner G. Kuhr , Jonathan S. Lindsey , Rajeeve Balkrishna Dabke , Zhiming Liu
发明人： David F. Bocian , Werner G. Kuhr , Jonathan S. Lindsey , Rajeeve Balkrishna Dabke , Zhiming Liu
IPC分类号： H01L51/40
CPC分类号： G11C13/0019 , B05D1/185 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G11B9/14 , G11B9/149 , G11C13/0014 , G11C13/025 , H01L51/0075 , H01L51/0077 , H01L51/0595
摘要： This invention provides a new method of forming a self-assembling monolayer (SAM) of alcohol-terminated or thiol-terminated organic molecules (e.g. ferrocenes, porphyrins, etc.) on a silicon or other group IV element surface. The assembly is based on the formation of an E-O— or an E-S— bond where E is the group IV element (e.g. Si, Ge, etc.). The procedure has been successfully used on both P- and n-type group IV element surfaces. The assemblies are stable under ambient conditions and can be exposed to repeated electrochemical cycling.
摘要翻译：本发明提供了一种在硅或其它IV族元素表面上形成醇封端或硫醇封端的有机分子（例如二茂铁，卟啉等）的自组装单层（SAM）的新方法。该组合基于形成E-O-或E-S-键，其中E是IV族元素（例如Si，Ge等）。该程序已经成功地用于P型和N型IV族元件表面。组件在环境条件下是稳定的并且可以暴露于重复的电化学循环。

3. 发明授权

US06381169B1 High density non-volatile memory device 有权
标题翻译：高密度非易失性存储器件
公开(公告)号：US06381169B1
公开(公告)日：2002-04-30
申请号：US09346228
申请日：1999-07-01
申请人： David F. Bocian , Werner G. Kuhr , Jonathan S. Lindsey
发明人： David F. Bocian , Werner G. Kuhr , Jonathan S. Lindsey
IPC分类号： G11C1300
CPC分类号： H01L51/0078 , B82Y10/00 , C07D487/22 , C07D519/00 , C07F17/02 , G11B9/14 , G11B9/149 , G11C11/5664 , G11C13/0009 , G11C13/0014 , G11C13/0016 , G11C2213/15 , G11C2213/77 , H01L27/28 , H01L51/0077 , H01L51/0084 , H01L51/009 , H01L51/0595 , Y10S977/943
摘要： This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 1015 bits/cm3), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium having a multiplicity of different and distinguishable oxidation states wherein data is stored in said oxidation states by the addition or withdrawal of one or more electrons from said storage medium via the electrically coupled electrode.
摘要翻译：本发明提供了新颖的高密度存储器件，其可电寻址以允许有效读取和写入，其提供高存储密度（例如，1015比特/ cm 3），其提供高度的容错性，并且适于有效的化学合成和芯片制造。器件本质上可锁定，缺陷容忍，并支持破坏性或非破坏性的读取周期。在优选实施例中，该装置包括电耦合到存储介质的固定电极，该存储介质具有多种不同且可区分的氧化态，其中通过经由该存储介质从所述存储介质中添加或撤出一个或多个电子而将数据存储在所述氧化态中电耦合电极。

4. 发明授权

US07826250B2 Open circuit potential amperometry and voltammetry 有权
标题翻译：开路电位电流分析法和伏安法
公开(公告)号：US07826250B2
公开(公告)日：2010-11-02
申请号：US11102089
申请日：2005-04-07
申请人： Werner G. Kuhr , David F. Bocian , Jonathan S. Lindsey , Kristian A. Roth
发明人： Werner G. Kuhr , David F. Bocian , Jonathan S. Lindsey , Kristian A. Roth
IPC分类号： G11C11/00
CPC分类号： B82Y30/00 , B82Y10/00 , G01N27/3277
摘要： This invention provides approaches to improve the signal to noise ratio (S/N) in electrochemical measurements (e.g., amperometry, voltammetry, etc.). In particular, a method is described wherein the faradaic current is temporally dissociated from the charging current associated with reading the charge of a redox-active species (e.g., a self-assembled monolayer (SAM)). This method, designated herein as open circuit potential amperometry (OCPA), quantitatively reads the charge of the redox species bound to (electrically coupled to) an electrode surface, while discriminating against both charging current(s) and amperometric signal(s) that arise, e.g., from diffusion-based species in solution.
摘要翻译：本发明提供了改善电化学测量（例如电流分析法，伏安法等）中的信噪比（S / N）的方法。特别地，描述了一种方法，其中法拉第电流与读取氧化还原活性物质的电荷（例如，自组装单层（SAM））相关的充电电流暂时解离。该方法在本文中指定为开路电位电流分析法（OCPA），定量地读取结合到（电耦合到）电极表面的氧化还原物质的电荷，同时区分出现的充电电流和电流分析信号，例如，从溶液中的基于扩散的物质。

5. 发明授权

US07312100B2 In situ patterning of electrolyte for molecular information storage devices 有权
标题翻译：用于分子信息存储设备的电解质原位图案化
公开(公告)号：US07312100B2
公开(公告)日：2007-12-25
申请号：US10837028
申请日：2004-04-30
申请人： David F. Bocian , Werner G. Kuhr , Jonathan S. Lindsey , Veena Misra
发明人： David F. Bocian , Werner G. Kuhr , Jonathan S. Lindsey , Veena Misra
IPC分类号： H01L51/40
CPC分类号： G11C13/0014 , B82Y10/00 , G11C13/0009 , H01L51/0021 , H01L51/005 , H01L51/0077 , H01L51/0595 , Y10S977/896 , Y10S977/943
摘要： This invention pertains to methods assembly of organic molecules and electrolytes in hybrid electronic. In one embodiment, a method is provided that involves contacting a surface/electrode with a compound of formula: R-L2-M-L1-Z1 where Z1 is a surface attachment group; L1 and L2 are independently linker or covalent bonds; M is an information storage molecule; and R is a protected or unprotected reactive site or group; where the contacting results in attachment of the redox-active moiety to the surface via the surface attachment group; and ii) contacting the surface-attached information storage molecule with an electrolyte having the formula: J-Q where J is a charged moiety (e.g., an electrolyte); and Q is a reactive group that is reactive with the reactive group (R) and attaches J to the information storage molecule thereby patterning the electrolyte on the surface.
摘要翻译：本发明涉及混合电子中有机分子和电解质的组装方法。在一个实施方案中，提供了一种方法，其涉及使表面/电极与下式化合物接触：RL 2 -ML 1 -Z 1 / 其中Z 1是表面附着基团; L 1和L 2独立地是连接基或共价键; M是信息存储分子; 并且R是被保护或未被保护的反应性位点或基团; 其中所述接触导致通过所述表面附着基团将所述氧化还原活性部分附着到所述表面; 和ii）使表面附着的信息存储分子与具有下式的电解质接触：J-Q其中J是带电部分（例如电解质）; 并且Q是与反应性基团（R）反应并且将J附着到信息存储分子的反应性基团，从而对表面上的电解质进行图案化。

6. 发明授权

US06324091B1 Tightly coupled porphyrin macrocycles for molecular memory storage 有权
标题翻译：紧密耦合卟啉大环用于分子记忆储存
公开(公告)号：US06324091B1
公开(公告)日：2001-11-27
申请号：US09484394
申请日：2000-01-14
申请人： Daniel Tomasz Gryko , Peter Christian Clausen , David F. Bocian , Werner G. Kuhr , Jonathan S. Lindsey
发明人： Daniel Tomasz Gryko , Peter Christian Clausen , David F. Bocian , Werner G. Kuhr , Jonathan S. Lindsey
IPC分类号： G11C700
CPC分类号： H01L51/0078 , B82Y10/00 , C07D487/22 , C07D519/00 , C07F17/02 , G11B9/14 , G11B9/149 , G11C13/0009 , G11C13/0014 , G11C13/0016 , G11C2213/15 , H01L27/28 , H01L51/0077 , H01L51/0084 , H01L51/0595
摘要： This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 1015 bits/cm3), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium comprising a storage molecule comprising a first subunit and a second subunit wherein the first and second subunits are tightly coupled such that oxidation of the first subunit alters the oxidation potential(s) of the second subunit rendering the oxidation potential(s) of the second unit different and distinguishable from the oxidation potentials of the first subunit.
摘要翻译：本发明提供了新颖的高密度存储器件，其可电寻址以允许有效读取和写入，其提供高存储密度（例如，1015比特/ cm 3），其提供高度的容错性，并且适于有效的化学合成和芯片制造。器件本质上可锁定，缺陷容忍，并支持破坏性或非破坏性的读取周期。在优选实施例中，该装置包括电耦合到存储介质的固定电极，该存储介质包括包含第一亚基和第二亚基的存储分子，其中第一和第二亚基紧密耦合，使得第一亚基的氧化改变氧化电位（ s），使得第二单元的氧化电位不同，并与第一亚单位的氧化电位区分开。

7. 发明授权

US06728129B2 Multistate triple-decker dyads in three distinct architectures for information storage applications 失效
标题翻译：用于信息存储应用的三种不同架构中的多层三层二层
公开(公告)号：US06728129B2
公开(公告)日：2004-04-27
申请号：US10079938
申请日：2002-02-19
申请人： Jonathan S. Lindsey , David F. Bocian , Karl-Heinz Schweikart , Werner G. Kuhr
发明人： Jonathan S. Lindsey , David F. Bocian , Karl-Heinz Schweikart , Werner G. Kuhr
IPC分类号： G11C1100
CPC分类号： G11C13/0014 , B82Y10/00 , G11B9/14 , G11B9/149 , G11C11/34 , G11C11/5664 , G11C13/0009 , G11C13/025 , G11C2213/77
摘要： This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 1015 bits/cm3), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium having a multiplicity of different and distinguishable oxidation states wherein data is stored in said oxidation states by the addition or withdrawal of one or more electrons from said storage medium via the electrically coupled electrode. The storage medium typically comprises a storage molecule that is a triple-decker sandwich heterodimer. Such dimers can provide 8 or more oxidation states and permit the storage of at least 3 bits per molecule.
摘要翻译：本发明提供了可提供高存储密度（例如，10,15bit / cm 3）的电位置可允许有效读/写的新型高密度存储器件，其提供高度的容错能力，并且适合有效的化学合成和芯片制造。器件本质上可锁定，缺陷容忍，并支持破坏性或非破坏性的读取周期。在优选实施例中，该器件包括电耦合到存储介质的固定电极，该存储介质具有多种不同且可区分的氧化态，其中通过经由该存储介质从所述存储介质中添加或撤出一个或多个电子而将数据存储在所述氧化态中电耦合电极。存储介质通常包含作为三层三明治夹心异二聚体的储存分子。这种二聚体可以提供8个或更多个氧化态，并允许每分子存储至少3位。

8. 发明授权

US06674121B2 Method and system for molecular charge storage field effect transistor 失效
标题翻译：分子电荷存储场效应晶体管的方法和系统
公开(公告)号：US06674121B2
公开(公告)日：2004-01-06
申请号：US10017999
申请日：2001-12-14
申请人： Veena Misra , David F. Bocian , Werner G. Kuhr , Jonathan S. Lindsey
发明人： Veena Misra , David F. Bocian , Werner G. Kuhr , Jonathan S. Lindsey
IPC分类号： H01L29792
CPC分类号： H01L27/283 , B82Y10/00 , G11C11/5664 , G11C13/0009 , G11C13/0014 , G11C13/0016 , G11C2213/53 , H01L51/052 , H01L51/0529 , Y10S977/721 , Y10S977/887 , Y10S977/937
摘要： A method and/or system and/or apparatus for a molecular-based FET device (an m-FET) uses charge storing molecules between a gate and channel of an FET-type transistor. Further embodiments describe fabrication methods for using combinations of standard practices in lithography and synthetic chemistry and novel elements.
摘要翻译：用于基于分子的FET器件（m-FET）的方法和/或系统和/或设备在FET型晶体管的栅极和沟道之间使用电荷存储分子。另外的实施例描述了使用光刻和合成化学中的标准实践的组合以及新颖元件的制造方法。

9. 发明授权

US08173630B2 Multipodal tethers for high-density attachment of redox-active moieties to substrates 有权
标题翻译：用于将氧化还原活性部分高密度连接到底物的多峰系链
公开(公告)号：US08173630B2
公开(公告)日：2012-05-08
申请号：US11446586
申请日：2006-06-01
申请人： Jonathan S. Lindsey , David F. Bocian , Robert Loewe , Ignacio Sanchez , Werner G. Kuhr , Kisari Padmaja , Lingyun Wei
发明人： Jonathan S. Lindsey , David F. Bocian , Robert Loewe , Ignacio Sanchez , Werner G. Kuhr , Kisari Padmaja , Lingyun Wei
IPC分类号： A01N55/02 , C07B47/00 , C07D487/22
CPC分类号： C07D207/335 , B82Y10/00 , B82Y30/00 , C07C17/093 , C07C21/17 , C07C25/24 , C07C45/44 , C07C45/58 , C07C47/548 , C07C255/50 , H01L51/0077 , H01L51/0595 , C07C47/24 , C07C25/22
摘要： This invention provides redox-active molecules attached to polypodal (e.g., bipodal, tripodal, quadrapodal, pentapodal, etc.) tethers that can be used for attachment of the redox-active molecules to a substrate (e.g., an electrode). The tethered redox-active molecules are useful for the fabrication of memory devices.
摘要翻译：本发明提供连接到可以用于将氧化还原活性分子连接到底物（例如电极）上的多峰（例如，双峰，三峰，四峰，五峰等）系链的氧化还原活性分子。系留的氧化还原活性分子可用于制造存储器件。

10. 发明授权

US06208553B1 High density non-volatile memory device incorporating thiol-derivatized porphyrins 有权
标题翻译：含有硫醇衍生的卟啉的高密度非挥发性记忆装置
公开(公告)号：US06208553B1
公开(公告)日：2001-03-27
申请号：US09346221
申请日：1999-07-01
申请人： Daniel Tomasz Gryko , Peter Christian Clausen , Kristian M. Roth , David F. Bocian , Werner G. Kuhr , Jonathan S. Lindsey
发明人： Daniel Tomasz Gryko , Peter Christian Clausen , Kristian M. Roth , David F. Bocian , Werner G. Kuhr , Jonathan S. Lindsey
IPC分类号： G11C1100
CPC分类号： G11C11/5664 , B82Y10/00 , C07D487/22 , C07D519/00 , C07F17/02 , G11B9/14 , G11B9/149 , G11C13/0014 , G11C13/0016 , G11C13/025 , G11C2213/77 , H01L27/285 , H01L51/0077 , H01L51/0078 , H01L51/0084 , H01L51/0595
摘要： This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 1015 bits/cm3), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium comprising one or more thiol-derivatized porphyrins. The storage medium has a multiplicity of different and distinguishable oxidation states and data is stored in said oxidation states by the addition or withdrawal of one or more electrons from the storage medium via the electrically coupled electrode(s).
摘要翻译：本发明提供了新颖的高密度存储器件，其可电寻址以允许有效读取和写入，其提供高存储密度（例如，1015比特/ cm 3），其提供高度的容错性，并且适于有效的化学合成和芯片制造。器件本质上可锁定，缺陷容忍，并支持破坏性或非破坏性的读取周期。在优选的实施方案中，该装置包括电耦合到包含一种或多种硫醇衍生的卟啉的存储介质的固定电极。存储介质具有多种不同且可区分的氧化态，并且通过经由电耦合的电极从存储介质中添加或取出一个或多个电子，将数据存储在所述氧化态中。

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