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1. 发明授权

US09396947B2 Wafer structure for electronic integrated circuit manufacturing 有权
公开(公告)号：US09396947B2
公开(公告)日：2016-07-19
申请号：US13218308
申请日：2011-08-25
申请人： David B. Kerwin , Joseph M. Benedetto
发明人： David B. Kerwin , Joseph M. Benedetto
IPC分类号： H01L29/66 , H01L21/20 , H01L21/18 , H01L27/092 , H01L29/10
CPC分类号： H01L27/0921 , H01L21/187 , H01L23/552 , H01L23/556 , H01L29/1087
摘要： A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for use in the manufacture of integrated circuits. The bonded wafer structure is especially suited for making radiation-hardened integrated circuits.

2. 发明申请

US20130049177A1 WAFER STRUCTURE FOR ELECTRONIC INTEGRATED CIRCUIT MANUFACTURING 有权
标题翻译：电子集成电路制造的波形结构
公开(公告)号：US20130049177A1
公开(公告)日：2013-02-28
申请号：US13218308
申请日：2011-08-25
申请人： David B. Kerwin , Joseph M. Benedetto
发明人： David B. Kerwin , Joseph M. Benedetto
IPC分类号： H01L29/06 , H01L21/18
CPC分类号： H01L27/0921 , H01L21/187 , H01L23/552 , H01L23/556 , H01L29/1087
摘要： A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for use in the manufacture of integrated circuits. The bonded wafer structure is especially suited for making radiation-hardened integrated circuits.
摘要翻译：具有处理晶片，器件晶片和在器件晶片的导电特性与处理晶片之间突然过渡的界面区域的键合晶片结构被用于制造半导体器件。键合晶片结构的改进的掺杂分布非常适用于集成电路的制造。结合晶片结构特别适用于制造辐射硬化集成电路。

3. 发明授权

US09378956B2 Wafer structure for electronic integrated circuit manufacturing 有权
标题翻译：晶圆结构用于电子集成电路制造
公开(公告)号：US09378956B2
公开(公告)日：2016-06-28
申请号：US13218292
申请日：2011-08-25
申请人： David B. Kerwin , Joseph M. Benedetto
发明人： David B. Kerwin , Joseph M. Benedetto
IPC分类号： H01L31/115 , H01L21/20 , H01L21/18 , H01L27/092 , H01L21/263
CPC分类号： H01L23/552 , H01L21/187 , H01L21/263 , H01L21/26513 , H01L21/304 , H01L27/0921
摘要： A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for use in the manufacture of integrated circuits. The bonded wafer structure is especially suited for making radiation-hardened integrated circuits.
摘要翻译：具有处理晶片，器件晶片和在器件晶片的导电特性与处理晶片之间突然过渡的界面区域的键合晶片结构被用于制造半导体器件。键合晶片结构的改进的掺杂分布非常适用于集成电路的制造。结合晶片结构特别适用于制造辐射硬化集成电路。

4. 发明授权

US09378955B2 Wafer structure for electronic integrated circuit manufacturing 有权
公开(公告)号：US09378955B2
公开(公告)日：2016-06-28
申请号：US13218273
申请日：2011-08-25
申请人： David B. Kerwin , Joseph M. Benedetto
发明人： David B. Kerwin , Joseph M. Benedetto
IPC分类号： H01L21/02 , H01L21/20 , H01L21/18 , H01L29/66 , H01L29/868 , H01L27/092 , H01L21/263 , H01L29/78
CPC分类号： H01L21/187 , H01L21/263 , H01L21/304 , H01L27/0921 , H01L29/66136 , H01L29/78 , H01L29/868
摘要： A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for use in the manufacture of integrated circuits. The bonded wafer structure is especially suited for making radiation-hardened integrated circuits.

5. 发明申请

US20130049147A1 WAFER STRUCTURE FOR ELECTRONIC INTEGRATED CIRCUIT MANUFACTURING 有权
公开(公告)号：US20130049147A1
公开(公告)日：2013-02-28
申请号：US13218292
申请日：2011-08-25
申请人： David B. Kerwin , Joseph M. Benedetto
发明人： David B. Kerwin , Joseph M. Benedetto
IPC分类号： H01L31/115 , H01L31/18
CPC分类号： H01L23/552 , H01L21/187 , H01L21/263 , H01L21/26513 , H01L21/304 , H01L27/0921
摘要： A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for use in the manufacture of integrated circuits. The bonded wafer structure is especially suited for making radiation-hardened integrated circuits.

6. 发明授权

US06890832B1 Radiation hardening method for shallow trench isolation in CMOS 有权
标题翻译： CMOS中浅沟槽隔离的辐射硬化方法
公开(公告)号：US06890832B1
公开(公告)日：2005-05-10
申请号：US10292787
申请日：2002-11-12
申请人： David B. Kerwin , Bradley J Larsen
发明人： David B. Kerwin , Bradley J Larsen
IPC分类号： H01L21/762 , H01L21/8234 , H01L21/76
CPC分类号： H01L21/76237 , H01L21/823481 , Y10S438/911
摘要： A radiation-hardened STI process includes implanting a partially formed wafer with a fairly large dose (1013 to 1017 ions/cm2) of a large atom group III element, such as B, Al, Ga or In at an energy between about 30 and 500 keV. The implant is followed by an implant of a large group V element, such as P, As, Sb, or Bi using similar doses and energies to the group III element. The group V element compensates the group III element. The combination of the two large atoms decreases the diffusivity of small atoms, such as B, in the implanted areas. Furthermore, the combination of the group III and group V elements in roughly equal proportions creates recombination sites and electron traps in the field oxide, resulting in a radiation hardened semiconductor device.
摘要翻译：辐射硬化的STI工艺包括以相当大的剂量（10×13×10〜17×2 / cm 2）注入部分形成的晶片大的原子组III元素，例如B，Al，Ga或In，其能量在约30和500keV之间。随后，使用与III族元素相似的剂量和能量，植入大的V族元素，例如P，As，Sb或Bi。 V族元素补偿第III族元素。两个大原子的组合降低了植入区域中小原子（如B）的扩散性。此外，III族和V族元素的组合大致相等地在场氧化物中产生复合位点和电子陷阱，导致辐射硬化的半导体器件。

7. 发明授权

US07589327B2 Energy sensitive direct conversion radiation detector 有权
标题翻译：能量敏感直接转换辐射探测器
公开(公告)号：US07589327B2
公开(公告)日：2009-09-15
申请号：US12121480
申请日：2008-05-15
申请人： David B. Kerwin
发明人： David B. Kerwin
IPC分类号： H01J47/00
CPC分类号： G01T1/242 , G01T1/28
摘要： An x-ray detector capable of directly converting x-ray radiation into electrical signals utilizes the radiation induced conductivity of various solid, electrically insulating materials. The detector is configured comprising one or more anodes and cathodes separated by various thicknesses of dielectric material wherein ionization occurs primarily in the electrodes of such detector structure. The radiation induced conductivity of the dielectric material can be modulated by controlling the size, orientation and composition of the electrodes and the dielectric materials as well as the electrical bias between anode and cathode.
摘要翻译：能够将x射线辐射直接转换为电信号的X射线检测器利用各种固体电绝缘材料的辐射诱导电导率。检测器被配置为包括由各种厚度的介电材料分离的一个或多个阳极和阴极，其中电离主要发生在这种检测器结构的电极中。可以通过控制电极和介电材料的尺寸，取向和组成以及阳极和阴极之间的电偏压来调节介电材料的辐射诱导电导率。

8. 发明授权

US06855618B2 Radiation hardened semiconductor device 有权
标题翻译：辐射硬化半导体器件
公开(公告)号：US06855618B2
公开(公告)日：2005-02-15
申请号：US10284230
申请日：2002-10-30
申请人： Richard L. Woodruff , Scott M. Tyson , John T. Chaffee , David B. Kerwin
发明人： Richard L. Woodruff , Scott M. Tyson , John T. Chaffee , David B. Kerwin
IPC分类号： H01L21/265 , H01L21/762 , H01L21/336
CPC分类号： H01L21/26506 , H01L21/2658 , H01L21/76202
摘要： A method for manufacturing a radiation hardened semiconductor device, having defined active region and isolation region. The isolation region containing an isolation material and active region containing a transition region between active and isolation region, sometimes denoted a bird's beak region. Wherein the transition region is implanted with germanium and boron, to prevent formation of leakage paths between active devices, or within an active device. The implanted area can be further limited to that area of the transition region that is adapted to be covered by a gate material, such as polysilicon.
摘要翻译：一种制造具有限定的有源区和隔离区的辐射硬化半导体器件的方法。隔离区域包含隔离材料和活性区域，活性区域在活性隔离区域和隔离区域之间包含过渡区域，有时表示为鸟的喙区域。其中在过渡区域中注入锗和硼，以防止在有源器件之间或在有源器件内形成泄漏路径。可以将注入区域进一步限制为适合被栅极材料例如多晶硅覆盖的过渡区域的区域。

9. 发明申请

US20130049173A1 WAFER STRUCTURE FOR ELECTRONIC INTEGRATED CIRCUIT MANUFACTURING 有权
公开(公告)号：US20130049173A1
公开(公告)日：2013-02-28
申请号：US13218273
申请日：2011-08-25
申请人： David B. Kerwin , Joseph Benedetto
发明人： David B. Kerwin , Joseph Benedetto
IPC分类号： H01L29/06 , H01L21/30 , H01L21/322
CPC分类号： H01L21/187 , H01L21/263 , H01L21/304 , H01L27/0921 , H01L29/66136 , H01L29/78 , H01L29/868
摘要： A bonded wafer structure having a handle wafer, a device wafer, and an interface region with an abrupt transition between the conductivity profile of the device wafer and the handle wafer is used for making semiconductor devices. The improved doping profile of the bonded wafer structure is well suited for use in the manufacture of integrated circuits. The bonded wafer structure is especially suited for making radiation-hardened integrated circuits.

10. 发明授权

US07544947B2 Cross-talk and back side shielding in a front side illuminated photo detector diode array 有权
标题翻译：串扰和背面屏蔽在前端照明光电二极管阵列
公开(公告)号：US07544947B2
公开(公告)日：2009-06-09
申请号：US11681462
申请日：2007-03-02
申请人： David B. Kerwin , Rockford Curby
发明人： David B. Kerwin , Rockford Curby
IPC分类号： G01T1/24
CPC分类号： G01T1/2018
摘要： A front side illuminated photo detector array is shielded from X-ray cross-talk by filling the septa between individual photo detector diodes with a high atomic number material such as tungsten. The processing circuitry is also shielded from stray X-rays by a barrier such as tungsten placed between each photo detector diode and the processing circuitry. This barrier serves a dual role as shielding the processing circuitry from stray X-ray radiation and acting as the electrical contact between the detector diode and the circuitry.
摘要翻译：通过用诸如钨的高原子序数材料填充各个光电检测器二极管之间的隔膜来遮蔽前侧照明光电检测器阵列的X射线串扰。处理电路还通过诸如放置在每个光电检测器二极管和处理电路之间的钨等障碍物屏蔽杂散X射线。该屏障起到双重作用，将处理电路屏蔽在杂散X射线辐射之间并用作检测器二极管和电路之间的电接触。

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