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1. 发明授权

US08889469B2 Multi-nary group IB and VIA based semiconductor 有权
标题翻译：多元组IB和基于VIA的半导体
公开(公告)号：US08889469B2
公开(公告)日：2014-11-18
申请号：US13533761
申请日：2012-06-26
申请人： David B. Jackrel , Katherine Dickey , Kristin Pollock , Jacob Woodruff , Peter Stone , Gregory Brown
发明人： David B. Jackrel , Katherine Dickey , Kristin Pollock , Jacob Woodruff , Peter Stone , Gregory Brown
IPC分类号： H01L31/032 , H01L31/0352 , H01L31/0749
CPC分类号： H01L31/0322 , H01L31/035218 , H01L31/0749 , Y02E10/541
摘要： Methods and devices are provided for forming multi-nary semiconductor. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as Ga in the back portion of the final semiconductor layer. The additive may be a non-copper Group IB additive in elemental or alloy form. Some embodiments may use both selenium and sulfur, forming a senary or higher semiconductor alloy. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
摘要翻译：提供用于形成多元半导体的方法和装置。在一个实施例中，提供了一种方法，其包括将前体材料沉积到基底上，其中前体材料可以包含或可以与添加剂一起使用，以使最终半导体层的后部中的IIIA族材料（例如Ga）的浓度最小化。添加剂可以是元素或合金形式的非铜IB族添加剂。一些实施方案可以同时使用硒和硫，形成一个或多个半导体合金。要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

2. 发明授权

US08729543B2 Multi-nary group IB and VIA based semiconductor 有权
标题翻译：多元组IB和基于VIA的半导体
公开(公告)号：US08729543B2
公开(公告)日：2014-05-20
申请号：US13208325
申请日：2011-08-11
申请人： David B. Jackrel , Katherine Dickey , Kristin Pollock , Jacob Woodruff , Peter Stone , Gregory Brown
发明人： David B. Jackrel , Katherine Dickey , Kristin Pollock , Jacob Woodruff , Peter Stone , Gregory Brown
IPC分类号： H01L31/032
CPC分类号： H01L21/268 , H01L29/263 , H01L31/022466 , H01L31/0322 , H01L31/03923 , H01L31/03928 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： Methods and devices are provided for forming multi-nary semiconductor. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as Ga in the back portion of the final semiconductor layer. The additive may be a non-copper Group IB additive in elemental or alloy form. Some embodiments may use both selenium and sulfur, forming a senary or higher semiconductor alloy.
摘要翻译：提供用于形成多元半导体的方法和装置。在一个实施例中，提供了一种方法，其包括将前体材料沉积到基底上，其中前体材料可以包含或可以与添加剂一起使用，以使最终半导体层的后部中的IIIA族材料（例如Ga）的浓度最小化。添加剂可以是元素或合金形式的非铜IB族添加剂。一些实施方案可以同时使用硒和硫，形成一个或多个半导体合金。

3. 发明申请

US20120313200A1 MULTI-NARY GROUP IB AND VIA BASED SEMICONDUCTOR 有权
标题翻译：第IBI组和第二代半导体
公开(公告)号：US20120313200A1
公开(公告)日：2012-12-13
申请号：US13533761
申请日：2012-06-26
申请人： David B. Jackrel , Katherine Dickey , Kristin Pollock , Jacob Woodruff , Peter Stone , Gregory Brown
发明人： David B. Jackrel , Katherine Dickey , Kristin Pollock , Jacob Woodruff , Peter Stone , Gregory Brown
IPC分类号： H01L31/032 , H01L31/18
CPC分类号： H01L31/0322 , H01L31/035218 , H01L31/0749 , Y02E10/541
摘要： Methods and devices are provided for forming multi-nary semiconductor. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as Ga in the back portion of the final semiconductor layer. The additive may be a non-copper Group IB additive in elemental or alloy form. Some embodiments may use both selenium and sulfur, forming a senary or higher semiconductor alloy. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
摘要翻译：提供用于形成多元半导体的方法和装置。在一个实施例中，提供了一种方法，其包括将前体材料沉积到基底上，其中前体材料可以包含或可以与添加剂一起使用，以使最终半导体层的后部中的IIIA族材料（例如Ga）的浓度最小化。添加剂可以是元素或合金形式的非铜IB族添加剂。一些实施方案可以同时使用硒和硫，形成一个或多个半导体合金。要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

4. 发明申请

US20120168910A1 MULTI-NARY GROUP IB AND VIA BASED SEMICONDUCTOR 有权
标题翻译：第IBI组和第二代半导体
公开(公告)号：US20120168910A1
公开(公告)日：2012-07-05
申请号：US13208325
申请日：2011-08-11
申请人： David B. Jackrel , Katherine Dickey , Kristin Pollock , Jacob Woodruff , Peter Stone , Gregory Brown
发明人： David B. Jackrel , Katherine Dickey , Kristin Pollock , Jacob Woodruff , Peter Stone , Gregory Brown
IPC分类号： H01L29/26
CPC分类号： H01L21/268 , H01L29/263 , H01L31/022466 , H01L31/0322 , H01L31/03923 , H01L31/03928 , H01L31/0749 , Y02E10/541 , Y02P70/521
摘要： Methods and devices are provided for forming multi-nary semiconductor. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as Ga in the back portion of the final semiconductor layer. The additive may be a non-copper Group IB additive in elemental or alloy form. Some embodiments may use both selenium and sulfur, forming a senary or higher semiconductor alloy.
摘要翻译：提供用于形成多元半导体的方法和装置。在一个实施例中，提供了一种方法，其包括将前体材料沉积到基底上，其中前体材料可以包含或可以与添加剂一起使用，以使最终半导体层的后部中的IIIA族材料（例如Ga）的浓度最小化。添加剂可以是元素或合金形式的非铜IB族添加剂。一些实施方案可以同时使用硒和硫，形成一个或多个半导体合金。

5. 发明申请

US20120270363A1 MULTI-NARY GROUP IB AND VIA BASED SEMICONDUCTOR 审中-公开
标题翻译：第IBI组和第二代半导体
公开(公告)号：US20120270363A1
公开(公告)日：2012-10-25
申请号：US13344583
申请日：2012-01-05
申请人： David Jackrel , Katherine Dickey , Kristin Pollock , Jacob Woodruff , Luke Ryves , Peter Stone , Gregory Brown
发明人： David Jackrel , Katherine Dickey , Kristin Pollock , Jacob Woodruff , Luke Ryves , Peter Stone , Gregory Brown
IPC分类号： H01L31/0272
CPC分类号： H01L31/0322 , C09D11/326 , C23C18/1204 , H01L31/0749 , H01L31/18 , H01L31/206 , Y02E10/541 , Y02P70/521
摘要： Methods and devices are provided for forming an absorber layer. In one embodiment, a method is provided comprising of depositing a precursor material onto a substrate, wherein the precursor material may include or may be used with an additive to minimize concentration of group IIIA material such as Ga in the back portion of the final semiconductor layer. The additive may be a non-copper Group IB additive in elemental or alloy form. Some embodiments may use both selenium and sulfur
摘要翻译：提供了用于形成吸收层的方法和装置。在一个实施例中，提供了一种方法，其包括将前体材料沉积到基底上，其中前体材料可以包含或可以与添加剂一起使用，以使最终半导体层的后部中的IIIA族材料（例如Ga）的浓度最小化。添加剂可以是元素或合金形式的非铜IB族添加剂。一些实施方案可以同时使用硒和硫

6. 发明申请

US20140224312A1 DEPOSITION OF A HIGH SURFACE ENERGY THIN FILM LAYER FOR IMPROVED ADHESION OF GROUP I-III-VI2 SOLAR CELLS 审中-公开
标题翻译：用于改善组I-III-VI2太阳能电池的粘附的高表面能量薄膜层的沉积
公开(公告)号：US20140224312A1
公开(公告)日：2014-08-14
申请号：US13766712
申请日：2013-02-13
申请人： Gregory Brown , Gregory Kimball , Peter Stone
发明人： Gregory Brown , Gregory Kimball , Peter Stone
IPC分类号： H01L31/0216
CPC分类号： H01L21/02568 , H01L21/0237 , H01L21/02425 , H01L21/02491 , H01L21/02505 , H01L21/02614 , H01L21/02628 , H01L31/022425 , H01L31/0322 , H01L31/03928 , H01L31/0749 , Y02E10/541
摘要： A thin film photovoltaic cell includes a light absorption layer of Group I-III-VI2 semiconductor materials and a high surface energy thin film layer that improves adhesion between the light absorption layer and an underlying electrode layer. The high surface energy thin film either replaces or is deposited on top of the back electrode to decrease the formation of voids at the back interface during absorber growth/deposition and thereby enabling a wider process window and improved cell efficiencies. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
摘要翻译：薄膜光伏电池包括I-III-VI2族半导体材料的光吸收层和改善光吸收层和下层电极层之间的粘附性的高表面能薄膜层。高表面能薄膜取代或沉积在背电极的顶部，以减少在吸收体生长/沉积期间在后界面处的空隙的形成，从而实现更宽的工艺窗口和改进的电池效率。要强调的是，该摘要被提供以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开的主题。提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

7. 发明申请

US20130012360A1 Portable gymnastic device 审中-公开
公开(公告)号：US20130012360A1
公开(公告)日：2013-01-10
申请号：US13067937
申请日：2011-07-07
申请人： Peter Stone
发明人： Peter Stone
IPC分类号： A63B26/00
CPC分类号： A63B21/1636 , A63B21/002 , A63B21/068 , A63B21/151 , A63B21/1663 , A63B21/4035 , A63B21/4043 , A63B23/1218
摘要： A portable gymnastic device comprising a suspension means having two opposed and complementary rigid hooks, which are pivotally connected together and to a U-shaped frame by a pin. Hooked upper ends of the hooks are engaged over a horizontal cross member of the doorframe or a horizontal bar. The hooks are normally biased to a closed position permanently by the spring. A rope is connected with the U-shaped frame by a knot, which is placed on a top end of the rope. A handle is connected with a bottom end of the rope by suitable means such as a cam within the handle. On the bottom end of the rope several handles may be set on different levels to accommodate different height users and different exercises.

8. 发明申请

US20050205852A1 Stable fail-safe cleat with automatic in-line locking cam 失效
标题翻译：具有自动在线锁定凸轮的稳定的故障安全防滑板
公开(公告)号：US20050205852A1
公开(公告)日：2005-09-22
申请号：US11103315
申请日：2005-04-11
申请人： Peter Stone , Anton Vasyukevich
发明人： Peter Stone , Anton Vasyukevich
IPC分类号： B66D5/16 , B66F3/00
CPC分类号： B66D3/10 , B63B21/08 , B66D5/16 , Y10T24/3942 , Y10T24/3944
摘要： A failsafe stable cleat with automatic in-line line-locking includes a frame having proximate and a remote sides on substantially opposite sides of the frame and formed with a passageway, extending between the proximate and remote sides, for receiving a line and generally defining a cleat center line along which a line can move along a first line releasing direction from the proximate to the remote sides and a line pulling direction from the remote to the proximate sides; attaching members for attaching the frame to a support surface. A cam on the frame on one side of the passageway has a line engaging portion spaced a predetermined distance from the support surface, the cam being movable between a line releasing position and a line locking position. A pusher on the frame is positioned on an opposite side of the passageway in relation to the cam for selectively applying a force on the line in the direction of the cam A cam biasing member tends to urge the cam to disengage from the line while a pusher biasing member normally tends to move the line across the gap into contact with the cam while permitting the line to return to the passageway out of contact with the cam when sufficient tension is applied by the user off the cleat center line to create a force component to offset the pushing force created by the pusher biasing member. This promotes unlocking of the line and allowing the line to move in the first line releasing direction, engagement of the line by the cam to the line locking position creating a force couple which is a function of the predetermined distance, that tends to separate the frame from the support surface. A stabilizing element compensates for and offsets the force couple independently of the dimensions or configuration of the frame.
摘要翻译：具有自动线内线锁定的故障安全稳定防滑板包括框架，该框架在框架的基本相对的两侧具有邻近和远侧，并且形成有在近侧和远侧之间延伸的通道，用于接收线并且通常限定一个一条线可以沿其沿第一线释放方向从近侧到远侧移动，以及从远程到最近侧的线拉动方向; 用于将框架附接到支撑表面的附接构件。在通道一侧的框架上的凸轮具有与支撑表面间隔开预定距离的线接合部分，凸轮可在线释放位置和线锁定位置之间移动。框架上的推动器相对于凸轮定位在通道的相对侧上，用于在凸轮的方向上选择性地在线上施加力。凸轮偏置构件倾向于推动凸轮与线分离，而推动器偏压构件通常倾向于使线穿过间隙移动以与凸轮接触，同时当使用者从防滑钉中心线施加足够的张力以允许线返回至与凸轮接触的通道，以产生力分量抵消由推动偏压构件产生的推力。这促进了线的解锁并且允许线在第一线释放方向上移动，线通过凸轮与线锁定位置的接合产生了作为预定距离的函数的力耦合，其倾向于将框架从支撑面。稳定元件独立于框架的尺寸或构型补偿和抵消力联。

9. 发明授权

US08918966B2 Failsafe system for raising and lowering at least one object 有权
标题翻译：用于升高和降低至少一个物体的故障安全系统
公开(公告)号：US08918966B2
公开(公告)日：2014-12-30
申请号：US12927617
申请日：2010-11-19
申请人： Peter Stone
发明人： Peter Stone
IPC分类号： B66D1/54 , F16G11/10
CPC分类号： B66D1/54 , B66D5/32 , Y10T24/394 , Y10T24/3942 , Y10T24/3944
摘要： A deal with automatic line-locking includes a cam formed of a plurality of generally flat pressure-engaging segments or pressure pads that are angularly laterally offset to opposite sides of the cam plane an beyond the sheet(s) of flat material forming the cam, the segments or pads generally defining a line-receiving region having a generally uniform cross-section greater than the thickness of the sheet(s) of flat material configured to frictionally engage the line in the line locking position. Auxiliary sheave assemblies may be used to provide automatic failsafe operation by means of the cleat when raising or lowering an object on a hook or loop. A pusher may be used to automatically urge the line to move in the direction of the cam to lock the line especially when the line is released.
摘要翻译：自动线锁的处理包括由多个大致平坦的压力接合段或压力垫构成的凸轮，所述多个大致平坦的压力接合段或压力垫成角度地横向偏移到凸轮平面的相对侧，超过形成凸轮的平坦材料的片材，所述段或垫通常限定线接收区域，其具有大于平坦材料的片材的厚度的大致均匀的横截面，所述平板材料的片材被配置为摩擦地接合线路锁定位置中的线。辅助滑轮组件可以用于在提升或降低钩或环上的物体时通过防滑板提供自动故障保护操作。可以使用推动器来自动地将线沿着凸轮的方向移动以锁定线，特别是当线被释放时。

10. 发明授权

US08452371B2 Artery imaging system 有权
标题翻译：动脉成像系统
公开(公告)号：US08452371B2
公开(公告)日：2013-05-28
申请号：US11680977
申请日：2007-03-01
申请人： Charles L. Feldman , Peter Stone , Ahmet U. Coskun
发明人： Charles L. Feldman , Peter Stone , Ahmet U. Coskun
IPC分类号： A61B5/05
CPC分类号： A61B8/12 , A61B5/02007 , A61B5/0402 , A61B5/7289 , A61B6/481 , A61B6/504 , A61B6/5247 , A61B8/5238 , G06T3/0037 , G06T7/33 , G06T7/38 , G06T2207/10016 , G06T2207/10132 , G06T2207/30101
摘要： Techniques for imaging a blood vessel are described. A transducer attached to a catheter is guided to a first site within a blood vessel. The catheter is moved to a second site proximal to the first site at a speed selected to enable the transducer to generate a signal indicative of a geometry wall, the lumen, and a portion of the side branch. A first image of the blood vessel obtained from the signal is oriented with a second image of the blood vessel such that a first portion of the first image aligns with a second portion of the second image.
摘要翻译：描述了血管成像技术。附接到导管的换能器被引导到血管内的第一部位。将导管以选定的速度移动到靠近第一部位的第二部位，以使得换能器能够产生指示壁，内腔和侧分支的一部分的几何形状的信号。从信号获得的血管的第一图像以血管的第二图像取向，使得第一图像的第一部分与第二图像的第二部分对准。

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