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    • 1. 发明申请
    • METHOD FOR REDUCED ELECTRICAL FUSING TIME
    • 降低电气熔融时间的方法
    • US20050013187A1
    • 2005-01-20
    • US10604414
    • 2003-07-18
    • Darren AnandJohn BarthSteven OaklandMichael Ouellette
    • Darren AnandJohn BarthSteven OaklandMichael Ouellette
    • G11C17/00G11C17/16G11C17/18
    • G11C17/16G11C17/18
    • A method and electrical fuse circuit design for reducing the testing time for a semiconductor device manufactured with redundant eFuse circuitry. A two-to-one multiplexer (MUX) is provided at each eFuse circuit in addition to the fuse latch and pattern latch and other logic components the eFuse circuit. Information on which fuse is to be blown is stored in the fuse's pattern latch. The output generated by the pattern latch is ANDed with a program input to provide a select signal for the MUX. Based on the select signal, the MUX allows the shifted “1” to either go to the next latch in the shift chain or bypass the next latch or latches in the shift chain depending on whether the next fuse is to be blown. Accordingly, rather than serially shifting through each fuse latch within the device, the invention enables only those fuse latches associated with fuses that are to be blown to hold up the propagation of the shifted “1” to the next eFuse circuits.
    • 一种用于减少使用冗余eFuse电路制造的半导体器件的测试时间的方法和电熔丝电路设计。 除了保险丝锁存器和图案锁存器以及eFuse电路的其他逻辑元件之外,在每个eFuse电路上还提供两对一多路复用器(MUX)。 保险丝图案锁存器中存储有要熔断保险丝的信息。 由模式锁存器产生的输出与程序输入进行“与”运算以提供MUX的选择信号。 基于选择信号,MUX允许移位的“1”转到下一个锁存器,或者旁路下一个锁存器或锁存在换档链中,这取决于下一个保险丝是否被熔断。 因此,本发明不仅可以串联地转换器件内的每个熔丝锁存器,而且仅使与熔断器相关联的熔丝锁存器能够保持传输“1”到下一个eFuse电路的传输。
    • 3. 发明申请
    • METHOD FOR SEPARATING SHIFT AND SCAN PATHS ON SCAN-ONLY, SINGLE PORT LSSD LATCHES
    • 单独分离移位和扫描方法的方法LSSD LATCHES
    • US20050050415A1
    • 2005-03-03
    • US10604908
    • 2003-08-26
    • Darren AnandJohn BarthSteven OaklandMichael Ouellette
    • Darren AnandJohn BarthSteven OaklandMichael Ouellette
    • G01R31/3185G01R31/28
    • G01R31/318536G01R31/318544
    • A method and circuit design for enabling both shift path and scan path functionality with a single port LSSD latch designed for scan path functionality only, without increasing the device's internal real estate and without substantial increase in overall device real estate. The circuit design eliminates the need for additional logic components to be built into the internal circuitry of the device and also eliminates the cost of providing dual port LSSD latches within the device. Implementation of the invention involves providing a unique configuration of low level logic components as input circuitry that is coupled to a pair of single port LSSD latches that operate as the input latches for the device. The low level logic components accomplishes the splitting of scan chain inputs and shift chain inputs to the input latches and thus enables the single ported LSSD latches to operate with similar functionality as dual ported LSSD latches.
    • 一种方法和电路设计,用于仅使用设计用于扫描路径功能的单端口LSSD锁存器实现移位路径和扫描路径功能,而不会增加设备的内部房地产,而且整体设备的不动产不会大幅增加。 电路设计消除了对设备内部电路内置的其他逻辑元件的需求,并且消除了在器件内提供双端口LSSD锁存器的成本。 本发明的实现涉及提供作为输入电路的低级逻辑组件的独特配置,该输入电路耦合到作为设备的输入锁存器操作的一对单端口LSSD锁存器。 低电平逻辑组件完成扫描链输入和移位链输入到输入锁存器的分割,从而使单端口LSSD锁存器能够与双端口LSSD锁存器类似的功能运行。
    • 10. 发明申请
    • Differential and Hierarchical Sensing for Memory Circuits
    • 用于存储器电路的差分和分层检测
    • US20070223298A1
    • 2007-09-27
    • US11754422
    • 2007-05-29
    • John BarthPaul ParriesWilliam ReohrMatthew Wordeman
    • John BarthPaul ParriesWilliam ReohrMatthew Wordeman
    • G11C7/02
    • G11C7/12G11C7/02G11C7/062G11C11/4091G11C11/4094
    • A memory circuit includes multiple word lines, multiple pairs of complementary bank bit lines, multiple block select lines, and multiple of block circuits. Each of the block circuits includes a local bit line; a first transistor having a control terminal connected to the local bit line, a first bias terminal connected to a first bank bit line of a given pair of bank bit lines, and a second bias terminal connecting to a first voltage source; a second transistor having a control terminal connected to a corresponding one of the block select lines, a first bias terminal connected to a second bank bit line of the given pair of bank bit lines, and a second bias terminal connected to the local bit line; and a plurality of memory cells connected to the local bit line and to respective word lines in the memory circuit. At least two block circuits are connected to a given pair of bank bit lines, the block circuits being configured such that a load on each bank bit line in the given pair of bank bit lines is substantially matched to one another.
    • 存储器电路包括多个字线,多对互补组位线,多个块选择线和多个块电路。 每个块电路包括局部位线; 第一晶体管,其具有连接到本地位线的控制端子,连接到给定的一对组位线的第一组位线的第一偏置端子和连接到第一电压源的第二偏置端子; 第二晶体管,其具有连接到对应的一个块选择线的控制端子,连接到给定的一对组位线的第二组位线的第一偏置端子和连接到局部位线的第二偏置端子; 以及连接到本地位线和存储电路中的相应字线的多个存储单元。 至少两个块电路连接到给定的一组组位线,块电路被配置为使得给定的一组组位线中的每个组位线上的负载基本上彼此匹配。